WO2017141918A1

WO2017141918A1 - Processing method and processing apparatus

Info

Publication number: WO2017141918A1
Application number: PCT/JP2017/005372
Authority: WO
Inventors: 章亀久保田
Original assignee: 国立大学法人熊本大学
Priority date: 2016-02-16
Filing date: 2017-02-14
Publication date: 2017-08-24
Also published as: JP6515311B2; JP6928328B2; JPWO2017141918A1; JP2018125549A

Abstract

[Problem] To provide a processing method and a processing apparatus capable of realizing high-efficiency, high-precision processing with a simple configuration, using dry polishing for processing diamonds, etc. [Solution] A processing apparatus 1 has a sapphire surface plate 2, and a specimen holder 4 for holding a single-crystal diamond 3. The processing apparatus 1 also has an ozone supply unit 5 for supplying ozone gas to the contact site of the sapphire surface plate 2 and the single-crystal diamond 3.

Description

Processing method and processing apparatus

The present invention relates to a processing method and a processing apparatus. Specifically, the present invention relates to a processing method and a processing apparatus capable of realizing high-efficiency and high-precision processing with a simple configuration by dry polishing for processing diamond or the like.

Diamond has a wide band gap of 5.4 eV, has high thermal conductivity, and is excellent in dielectric breakdown electric field, charge mobility, and the like, and thus is regarded as a promising material for next-generation power semiconductor devices.

In order to manufacture a semiconductor device using diamond, it is said that a processing technique for smoothing the surface of the diamond substrate, which is the base of the device, at an atomic level and without disturbance is indispensable. However, since diamond is highly hard and chemically stable, it is extremely difficult to process it, and the development of processing technology has become a technical issue.

For example, as a conventional processing method, processing for performing chemical removal by polishing using abrasive grains such as chemical mechanical polishing is known. However, since the chemical reaction in the abrasive is used, the removal rate is slow and the processing efficiency is insufficient.

Here, there is a processing method in an atmospheric environment where an attempt is made to improve the processing efficiency without using abrasive grains, in contrast to the above-described polishing in a solution environment.

For example, a polishing platen is brought into contact with the surface to be polished of a substrate made of diamond at high pressure, and the substrate is rubbed relative to the polishing platen while irradiating the polishing surface of the substrate with ultraviolet rays from the back surface of the polishing platen. There has been proposed a technique of polishing by moving (see, for example, Patent Document 1).

In addition, the inventors of the present application irradiate a polishing platen made of metal oxide with ultraviolet light or plasma to remove chemical contamination (organic contaminants) on the surface of the platen, and the surface of the platen Has been proposed (for example, see Patent Document 2).

In the method described in Patent Document 2, the surface of the surface plate is hydrophilized, thereby increasing the reaction sites with the workpiece surface atoms and chemically processing the atoms on the workpiece surface to perform processing. is there.

International Publication No. 2007/007683 International Publication No. 2014/034921

However, in the processing methods described in Patent Document 1 and Patent Document 2, the processing is performed by irradiation with ultraviolet rays, but ultraviolet light is unstable in the atmosphere, and the energy that it holds instantaneously disappears. It was difficult to uniformly irradiate the workpiece. For this reason, it has been difficult to stably achieve high processing accuracy.

Further, in the processing described in Patent Document 1 and Patent Document 2, there is a restriction on the installation place of the ultraviolet light source due to the configuration of the processing apparatus that relatively displaces the surface plate and the workpiece holding portion. That is, the existing processing apparatus cannot be used as it is, and it is necessary to manufacture a special processing apparatus for providing an ultraviolet light source.

Also, in dry polishing, frictional charging occurs when the workpiece and workpiece are brought into contact with each other and displaced relatively. The charged state of the surface of the workpiece and the workpiece becomes unstable due to frictional charging, and there is a problem that the surface roughness after machining and the machining efficiency cannot be controlled with high accuracy.

The present invention was devised in view of the above points, and provides a processing method and a processing apparatus capable of realizing high-efficiency and high-precision processing with a simple configuration by dry polishing for processing diamond or the like. It is intended to provide.

[About processing methods]
In order to achieve the above-mentioned object, the processing method of the present invention brings a processing member made of a metal oxide into contact with a workpiece, supplies ozone gas to a contact site, and also connects the processing member to the workpiece. And a step of displacing in a state of being brought into contact with.

Here, the contact part can be placed in an ozone gas environment by bringing the workpiece into contact with the workpiece and supplying ozone gas to the contact part. That is, although ozone gas is an unstable molecule, ozone gas can be localized in the same region by supplying ozone gas to the contact portion.

In addition, it is possible to generate frictional heat at the contact portion by the process of displacing the processed member in contact with the workpiece. This frictional heat pyrolyzes the supplied ozone gas and generates atomic oxygen from the ozone gas. The generated atomic oxygen is bound to a hydroxyl group (OH group) on the outermost surface of the processing member responsible for a chemical reaction (processing) with the workpiece in an atmospheric environment, that is, contamination derived from organic matter. Suppress nations. Stable physical and chemical processing of the workpiece can be achieved by degrading and purifying organic oxygen-derived soils and making the workpiece surface hydrophilic by exposing hydroxyl groups (OH groups) to the surface. It becomes possible.

Further, as described above, since the contact site is in an ozone gas environment, it is possible to secure atomic oxygen necessary for stable processing.

In the present invention, the surface of the workpiece is cleaned and made hydrophilic by utilizing atomic oxygen generated by the thermal decomposition of ozone gas at the contact portion between the workpiece and the workpiece, that is, the position where the workpiece is processed. To achieve physically and chemically stable processing of the workpiece.

Further, any one of single crystal sapphire, corundum, sapphire glass, sapphire crystal, polycrystalline alumina, alumina ceramic, and glass mainly composed of SiO ₂ whose processed member is made of Al ₂ O _3. When the workpiece is made of any one of diamond, polycrystalline diamond, CVD diamond, and DLC film, sufficiently stable processing can be performed on the workpiece.

Further, when the processed member is made of glass containing SiO ₂ as a main component and the workpiece is made of SiC, sufficiently stable processing for SiC can be performed.

Further, when humidifying at least one of the processed member or the workpiece, further stable processing is possible, the accuracy of the surface roughness can be further increased, and the processing efficiency can be improved.

Further, when the ozone gas contains an alkaline solution, the tribochemical reaction generated on the friction surface between the workpiece and the workpiece can be promoted, and the oxide on the workpiece surface can be generated and preferentially removed. It will be a thing. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by a tribochemical reaction is promoted, the accuracy of surface roughness can be further improved, and processing efficiency can be improved. In addition, the alkaline solution here is a solution exhibiting alkalinity such as alkaline electrolyzed water, NaOH, KOH, and the like.

Also, when the alkaline solution is alkaline electrolyzed water, it becomes possible to promote the tribochemical reaction with ozone gas containing alkaline electrolyzed water. Moreover, since alkaline electrolyzed water has high safety at the time of handling and can be generated relatively easily, the processing method can be made safer and simpler. The alkaline electrolyzed water here means alkaline water having a pH of 9.0 or higher.

In the case where the charge amount is controlled by supplying at least one of cations or anions to at least one of the processed member and the workpiece, the charged state of the surface of the processed member and the workpiece is changed. Stabilize.
Then, the charged state of the surface of the workpiece and the workpiece is controlled by relatively displacing the workpiece and the workpiece in which the charged state of the surface is stabilized. The surface can be physically and chemically processed.

In addition, when the charge amount is controlled by supplying N ₂ gas to the contact portion between the processed member and the workpiece, the charged state of the surface of the processed member and the workpiece can be more easily controlled, and the surface roughness is increased. The accuracy of the height can be further increased, and the processing efficiency can be further improved.

In the present invention, the surface of the workpiece is cleaned and made hydrophilic by utilizing atomic oxygen generated by the thermal decomposition of ozone at the contact portion between the workpiece and the workpiece, that is, the position where the workpiece is processed. To achieve physically and chemically stable processing of the workpiece. Therefore, abrasive-free polishing can be realized. Moreover, since it is only necessary to install a device for supplying ozone to the contact portion between the workpiece and the workpiece of the existing machining apparatus, the machining system can be easily constructed.

Examples of the “processed member” include metals such as iron, nickel, and Co, SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, and K ₂ O. And metal oxides such as CeO ₂ , ceramics such as SiC, SiN, and Al ₂ O ₃ , and processed members made of the constituent materials thereof. Further, as workpieces, diamond-related materials such as diamond, polycrystalline diamond, CVD diamond, DLC film, hard and brittle materials such as SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, glass, etc. Can be mentioned.

In order to achieve the above-described object, the processing method of the present invention brings a processing member made of a metal oxide into contact with a workpiece, supplies ozone gas to a contact site, and applies the processing member to the processing target. comprising the step of displacing in a state in contact with the workpiece, the workpiece is made of any one of glass whose main component is alumina ceramics or SiO _2, the workpiece is made of a GaN It is configured.

Further, since the processed member is made of any one of alumina ceramics or glass mainly composed of SiO ₂ and the workpiece is made of GaN, sufficiently stable processing can be performed on GaN. .

In addition, when the ozone gas contains alkaline electrolyzed water, it promotes the tribochemical reaction that occurs on the friction surface between the workpiece and the workpiece, and generates and preferentially removes oxides on the workpiece surface. It will be possible. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by a tribochemical reaction is promoted, the accuracy of surface roughness can be further improved, and processing efficiency can be improved. In addition, the alkaline solution here is a solution exhibiting alkalinity such as alkaline electrolyzed water, NaOH, KOH, and the like.

Moreover, it becomes possible to promote a tribochemical reaction with ozone gas containing alkaline electrolyzed water. By the tribochemical reaction, a reaction represented by the following reaction formula occurs, and processing with high accuracy and high processing efficiency can be performed on GaN.
2GaN + 3H ₂ O⇔Ga ₂ O ₃ + 2NH ₃
Moreover, since alkaline electrolyzed water has high safety at the time of handling and can be generated relatively easily, the processing method can be made safer and simpler. The alkaline electrolyzed water here means alkaline water having a pH of 9.0 or higher.

[About processing equipment]
In order to achieve the above object, a processing apparatus according to the present invention includes a processing member made of a metal oxide, a holding mechanism that holds a predetermined workpiece in contact with the processing member, and a processing member. And an ozone gas supply unit that supplies ozone gas to a contact portion with the workpiece, and a drive unit that displaces the workpiece in a state where the workpiece and the workpiece are in contact with each other.

Here, the contact portion is placed in an ozone gas environment by a holding mechanism that holds a predetermined workpiece in contact with the workpiece and an ozone gas supply unit that supplies ozone gas to the contact portion between the workpiece and the workpiece. Can do. That is, although ozone gas is an unstable molecule, ozone gas can be localized in the same region by supplying ozone gas to the contact portion.

Also, it is possible to generate frictional heat at the contact portion by the drive unit that displaces the processing member in a state where the processing member and the workpiece are in contact with each other. This frictional heat pyrolyzes the supplied ozone gas and generates atomic oxygen from the ozone gas. The generated atomic oxygen is bound to a hydroxyl group (OH group) on the outermost surface of the processing member responsible for a chemical reaction (processing) with the workpiece in an atmospheric environment, that is, contamination derived from organic matter. Suppress nations. Stable physical and chemical processing of the workpiece can be achieved by degrading and purifying organic oxygen-derived soils and making the workpiece surface hydrophilic by exposing hydroxyl groups (OH groups) to the surface. It becomes possible.

In the present invention, the surface of the workpiece is cleaned and made hydrophilic by utilizing atomic oxygen generated by the thermal decomposition of ozone at the contact portion between the workpiece and the workpiece, that is, the position where the workpiece is processed. To achieve physically and chemically stable processing of the workpiece.

In the present invention, the surface of the workpiece is cleaned and made hydrophilic by utilizing atomic oxygen generated by the thermal decomposition of ozone at the contact portion between the workpiece and the workpiece, that is, the position where the workpiece is processed. To achieve stable physical and chemical processing of the workpiece. Therefore, abrasive-free polishing can be realized. Moreover, since it is only necessary to install a device for supplying ozone to the contact portion between the workpiece and the workpiece of the existing machining apparatus, the machining system can be easily constructed.

Examples of the “processed member” include metals such as iron, nickel, and Co, SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, and K ₂ O. Inorganic oxides such as CeO ₂ , ceramics such as SiC, SiN, and Al ₂ O ₃ , and processed members made of constituent materials composed of these. Further, as workpieces, diamond-related materials such as diamond, polycrystalline diamond, CVD diamond, DLC film, hard and brittle materials such as SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, glass, etc. Can be mentioned.

In order to achieve the above object, a processing apparatus of the present invention includes a processing member made of a metal oxide, a holding mechanism for holding a predetermined workpiece in contact with the processing member, a processing member, An ozone gas supply unit that supplies ozone gas to a contact portion with the workpiece, and a drive unit that displaces the workpiece in a state where the workpiece and the workpiece are in contact with each other. The workpiece is made of alumina ceramics or SiO _2. And the workpiece is made of GaN.

[About processing methods]
In order to achieve the above object, the processing method of the present invention supplies at least one of a cation or an anion to at least one of a processed member or a workpiece processed by the processed member. The method includes a step of controlling the amount of charge and relatively displacing the workpiece and the workpiece in contact with each other.

Here, by supplying at least one of a cation or an anion to at least one of the processed member or the workpiece and controlling the charge amount, the charged state of the surface of the processed member and the workpiece is changed. Stabilize.
Then, the charged state of the surface of the workpiece and the workpiece is controlled by relatively displacing the workpiece and the workpiece in which the charged state of the surface is stabilized. The surface can be physically and chemically processed.

In the present invention, at least one of a cation and an anion is supplied to at least one of the processed member or workpiece, and the charged state of the surface of the processed member and workpiece is controlled, and the surface roughness is increased. This achieves machining with high accuracy and improved machining efficiency.

Also, it is possible to process the surface of the workpiece by supplying anions to at least one of the workpiece or the workpiece to control the charged state of the surfaces of the workpiece and the workpiece.

Also, it is possible to process the surface of the workpiece by supplying a cation to at least one of the workpiece or the workpiece to control the charged state of the surface of the workpiece and the workpiece.

Further, the surface of the workpiece can be processed by supplying anions and cations to at least one of the workpiece or the workpiece to control the charged state of the surfaces of the workpiece and the workpiece. .

In addition, when humidifying at least one of the processed member or the workpiece, it becomes easier to control the charged state, the accuracy of the surface roughness can be further improved, and the processing efficiency can be further improved. it can.

In addition, when the surface of the processed member is irradiated with ultraviolet light or plasma to clean and hydrophilize the surface of the processed member, it becomes easier to control the charged state of the surface of the processed member and the workpiece, The accuracy of the surface roughness can be further increased, and the processing efficiency can be further improved.

In addition, when N ₂ gas is supplied to the contact portion between the workpiece and the workpiece, it becomes easier to control the charged state of the surface of the workpiece and workpiece, and the accuracy of the surface roughness is further improved. And processing efficiency can further be improved.

In the present invention, by supplying at least one of cations or anions to at least one of the processed member or the workpiece, the charged state of the surface of the processed member and the workpiece is controlled, and the processed member The surface of the workpiece is physically and chemically processed by controlling the charged state of the surface of the workpiece and workpiece by displacing the workpiece while the outermost surface of the workpiece is in contact with the workpiece. Is realized. Therefore, as compared with a general ultraviolet light source, stable processing is possible only by supplying at least one of a cation and an anion.

[About processing equipment]
In order to achieve the above object, a processing apparatus according to the present invention includes a processing member and at least one of the processing member or a workpiece processed by the processing member. The same as the processing member in a state in which the processing member and the workpiece are in contact with each other, a charging processing unit that supplies at least one of the ions to control the charge amount, a holding mechanism that holds a predetermined workpiece, and the processing member. A drive unit that relatively displaces the workpiece.

Here, at least one of the processed member, the processed member, or the workpiece processed by the processed member is supplied with at least one of a cation or an anion to control the charge amount. This stabilizes the charged state of the surface of the workpiece and the workpiece.

In addition, the processing member, the holding mechanism that holds the predetermined workpiece, and the driving member that relatively displaces the processing member and the workpiece in a state where the processing member and the workpiece are in contact with each other. The surface of the workpiece can be physically and chemically processed after the charged state of the surface of the workpiece is stabilized.

In the present invention, at least one of cations or anions is supplied to at least one of the processed member or workpiece in the charging processing unit, and the charged state of the surface of the processed member and workpiece is controlled, It realizes machining with high surface roughness accuracy and improved machining efficiency.

In addition, when a humidifying section that humidifies at least one of the workpiece or workpiece is provided, it becomes easier to control the charged state, the accuracy of the surface roughness is further improved, and the processing efficiency is improved. Further improvement can be achieved.

In addition, when a cleaning and hydrophilic treatment section is provided to hydrophilize the surface of the processed member, it becomes easier to control the charged state of the surface of the processed member and the workpiece, thereby further improving the accuracy of the surface roughness. The processing efficiency can be further improved.

In addition, when an N ₂ gas supply unit that supplies N ₂ gas to the contact portion between the workpiece and the workpiece is provided, it becomes easier to control the charged state of the surfaces of the workpiece and workpiece, and the surface roughness The accuracy of the process can be further improved, and the processing efficiency can be further improved.

In the present invention, the charged state of the surface of the processed member and the workpiece is controlled by a charging processing unit that supplies at least one of a cation or an anion to at least one of the processed member or the workpiece, The surface of the workpiece is physically and chemically controlled by controlling the charged state of the surface of the workpiece and workpiece by a drive unit that displaces the workpiece while the outermost surface of the workpiece is in contact with the workpiece. Machining is realized. Further, since it is only necessary to replace the ultraviolet light source of the existing processing apparatus with a charging device or the like, the processing system can be easily constructed.

In the processing method and processing apparatus to which the present invention is applied, high-efficiency and high-precision processing can be realized with a simple configuration by dry polishing for processing diamond or the like.

It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. It is the data which measured the surface roughness of a part of process area | region of the comparative example 1 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of the comparative example 2 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of Example 1 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of the comparative example 3 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of Example 2 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of the comparative example 4 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of Example 3 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area before the process of Example 4 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region after the process of Example 4 with the non-contact shape measuring machine. It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. It is the data which measured the surface roughness of a part of process area | region of the comparative example 5 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of Example 5 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of the comparative example 8 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of Example 7 with the non-contact shape measuring machine. It is a graph which shows the relationship between the surface potential of Example 9, and processing time. It is a graph which shows the relationship between the surface potential of Example 10, and processing time. It is a graph which shows the relationship between the surface potential of Example 11, and processing time. 10 is a graph showing the relationship between the surface potential of Comparative Example 11 and the processing time. It is the data which measured the surface roughness of a part of process area | region of Example 9 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of Example 10 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of Example 11 with the non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area | region of the comparative example 11 with the non-contact shape measuring machine.

[First Embodiment of the Invention]
Hereinafter, a mode for carrying out the present invention (hereinafter, referred to as “first embodiment of the invention”) will be described.
FIG. 1 is a schematic view for explaining a processing apparatus to which the present invention is applied. The processing apparatus 1 shown here has a sapphire surface plate 2 and a sample holder 4 for holding a single crystal diamond 3. Further, the processing apparatus 1 includes an ozone supply unit 5 that supplies ozone gas to a contact portion between the sapphire surface plate 2 and the single crystal diamond 3. The single crystal diamond 4 is an example of a workpiece.

The single crystal diamond 3 which is a workpiece comes into contact with the upper surface of the sapphire surface plate 2 (the upper surface in FIG. 1), and the workpiece is polished. The sapphire surface plate 2 is an example of a processed member.

The ozone supply unit 5 is disposed above the sapphire surface plate 2. Further, the tip of the ozone supply unit 5, that is, the part from which ozone gas is discharged is directed to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3. Thereby, a contact site | part will be in ozone environment. In addition, the ozone gas is thermally decomposed into atomic oxygen by the frictional heat generated between the sapphire surface plate 2 and the single crystal diamond 3 at the contact portion, and the workpiece is stably processed.

Here, in the present embodiment, the case where the processing member is formed of the sapphire surface plate 2 is described as an example, but any material that can process the workpiece is sufficient. It is not always necessary to form the sapphire surface plate 2. For example, metals such as iron, nickel, Co, inorganic oxides such as SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, K ₂ O, CeO ₂ , SiC, SiN, may ceramics such as _Al 2 _{O 3,} and be formed of a constituent material consisting.

Further, the sapphire surface plate 2 is fixed on a processing table 6 whose rotation speed can be controlled, and the sapphire surface plate 2 is configured to be rotatable in a direction indicated by a symbol A in FIG.

Further, the sample holder 4 is configured to be rotatable in a direction indicated by a symbol B in FIG. 1 around a rotation axis 7 that is eccentric with respect to the rotation axis of the sapphire surface plate 2, and holds the single crystal diamond 3. And descends to a position s where the single crystal diamond 3 and the sapphire surface plate 2 come into contact with each other. In addition, the code | symbol Y in a figure has shown the direction which applies a load.

Here, in the present embodiment, the single crystal diamond 3 is described as an example of the workpiece held by the sample holder 4, but the workpiece is not limited to the single crystal diamond 3. Alternatively, diamond-related materials such as diamond, polycrystalline diamond, CVD diamond, and DLC film, hard brittle materials such as SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, and glass may be used.

Hereinafter, a processing method using the processing apparatus 1 configured as described above will be described. That is, an example of a processing method to which the present invention is applied will be described.

In an example of a processing method to which the present invention is applied, ozone gas is supplied from the ozone supply unit 5 to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3 while rotating the sapphire surface plate 2.

That is, while supplying ozone gas to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3, the ozone gas is thermally decomposed by frictional heat generated at the contact portion to generate atomic oxygen. The surface of the sapphire surface plate 2 is cleaned and hydrophilized with the generated atomic oxygen. That is, the surface of the sapphire surface plate 2 is modified.

Then, the surface of the single crystal diamond 3 is physically and chemically removed by rotating the sapphire surface plate 2 in a state where the upper surface of the surface modified sapphire surface 2 and the single crystal diamond 3 are in contact with each other. It becomes.

As a modification of the present embodiment, a device provided with a humidification processing unit in addition to the apparatus configuration shown in FIG. 1 can be adopted. The humidification processing unit is installed above the processing member. A humidification process part is a member which humidifies the surface of a processing member. A method of supplying ozone gas to which moisture has been supplied to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3 can also be employed. By performing humidification, the processing of the workpiece can be further stabilized.

As a further modification of the present embodiment, there is also a method in which alkaline electrolyzed water (pH 9.0 or higher) is included in the ozone gas supplied from the ozone supply unit, and the ozone gas is supplied to the contact portion between the workpiece and the workpiece. Can be adopted.

When ozone gas contains alkaline electrolyzed water, it promotes the tribochemical reaction that occurs on the friction surface between the workpiece and the workpiece, generates oxide on the workpiece surface, and can be removed preferentially. Become. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by a tribochemical reaction is promoted, the accuracy of surface roughness can be further improved, and processing efficiency can be improved.

Here, the solution contained in the ozone gas may be an alkaline solution, and is not limited to alkaline electrolyzed water. For example, an alkaline solution such as NaOH or KOH can be contained in ozone gas and used for processing.

[effect]
A processing method and a processing apparatus to which the present invention is applied use atomic oxygen generated by thermal decomposition of ozone at a contact portion between a processing member and a workpiece, that is, a position where the workpiece is processed. Therefore, the surface of the processed member can be more uniformly processed as compared with an apparatus that irradiates ultraviolet light. As a result, more stable and high machining accuracy can be realized.

Further, the processing apparatus to which the present invention is applied can be easily constructed only by arranging the ozone supply unit in an existing apparatus.

Furthermore, since the processing method and processing apparatus to which the present invention is applied do not use abrasive grains, it is not necessary to perform abrasive processing after processing.

Further, in the case of processing using abrasive grains, it is necessary to supply the abrasive grains in a slurry state, so that the processing member and the workpiece become wet with the slurry, and the temperature does not easily rise and the processing proceeds. hard.
On the other hand, in the processing method to which the present invention is applied, the slurry is not supplied because the abrasive grains are not used, the processed member and the workpiece are in a dry state, and the temperature rises including frictional heat. Easy to proceed chemical reaction. That is, highly accurate and highly efficient processing of difficult-to-process materials can be realized.

Hereinafter, examples and comparative examples of the present invention will be described. In addition, the Example shown here is an example and does not limit this invention.

[Example 1 and Comparative Examples 1 and 2]
As a processing method of Example 1 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 1 of the present invention, single crystal diamond (3 mm × 3 mm) as a workpiece is pressed against a sapphire surface plate with a load of ² kg (22.2 kg / cm ² ), and the sapphire surface plate is rotated. The sample holder was rotated at 1000 rpm while rotating at several 250 rpm, a rocking distance of 3 mm, and a rocking speed of 0.1 mm / s. Moreover, ozone gas (5 L / min) was supplied to the contact site | part of a sapphire surface plate and a single crystal diamond from the ozone supply part. Processing was performed for 1.5 hours in such a situation.
A method in which ozone was not supplied by the ozone supply unit in the same manner as in Example 1 was referred to as Comparative Example 1.
In addition, an ultraviolet light source is further installed in the apparatus configuration of the processing method of Example 1 described above, and while irradiating ultraviolet light (172 nm) on the sapphire surface plate from above with an irradiation intensity of 6 mW / cm ² , ozone Comparative Example 2 was a sample that did not supply ozone by the supply unit.
For the above-mentioned Example 1 and Comparative Examples 1 and 2, the surface roughness of the single crystal diamond after processing was measured with a non-contact shape measuring machine and evaluated.

2 shows the result of Comparative Example 1, FIG. 3 shows the result of Comparative Example 2, and FIG. 4 shows the result of Example 1.

As apparent from FIGS. 2 and 4, the machining surface of the workpiece is machined with high accuracy by the machining of Example 1 compared to the machining surface of the workpiece of Comparative Example 1, and in the measurement range of the workpiece surface. The value of arithmetic average roughness (Ra) was 0.119 nm, and it was found that it was processed smoothly. The value of arithmetic average roughness (Ra) of Comparative Example 1 was 2.213 nm.
Further, as apparent from FIGS. 3 and 4, it is understood that the processed surface of the workpiece is processed with higher accuracy by the processing of Example 1 than the processed surface of the workpiece of Comparative Example 2. It was.
In addition, the value of arithmetic mean roughness (Ra) in the measurement range of the to-be-processed surface of the comparative example 2 was 0.177 nm.

(1) About processing efficiency The processing efficiency by the processing method of Example 1 mentioned above and Comparative Examples 1-2 was confirmed with the following content.
A groove having a predetermined depth was formed in the single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in the groove depth before and after the machining.

The processing efficiency in Example 1 was 2453.5 nm / h, indicating a sufficient processing efficiency.
On the other hand, the processing efficiency in Comparative Example 1 was 33.3 nm / h. In addition, the processing efficiency in Comparative Example 2 was 238.1 nm / h.

(2) Surface roughness of processed surface of workpiece [Example 2 and Comparative Example 3]
As a processing method of Example 2 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 2 of the present invention, a load of 3 kg is applied to a SiC substrate (Single-crystal 4H-SiC 4 ° off) (2 inches) as a workpiece on a soda-lime glass surface plate. The soda-lime glass surface plate was rotated at a rotation speed of 200 rpm, a rocking distance of 6 mm, and a rocking speed of 0.1 mm / s, and the sample holder was rotated at 30 rpm. Moreover, the ultraviolet light source was installed and the soda-lime glass surface plate was irradiated with ultraviolet light (172 nm) from above under the condition of irradiation intensity of 6 mW / cm ² . Moreover, ozone gas (5 L / min) was supplied to the contact site | part of a soda-lime glass surface plate and a SiC substrate from an ozone supply part. Processing for 2 hours was performed in such a situation. Soda lime glass is an example of glass containing SiO ₂ as a main component.
The same sample before carrying out the processing method of Example 2 was mechanically polished with diamond abrasive grains as Comparative Example 3.
About said Example 2 and Comparative Example 3, the surface roughness of the SiC substrate after a process was measured with the non-contact shape measuring machine, and evaluation was performed.

FIG. 5 shows the result of Comparative Example 3, and FIG. 6 shows the result of Example 2.

As apparent from FIGS. 5 and 6, the processing surface of the workpiece is processed with high accuracy by the processing of Example 2 compared to the processing surface of the workpiece of Comparative Example 3, and in the measurement range of the processing surface. The value of arithmetic average roughness (Ra) was 0.311 nm, and it was found that it was processed smoothly. The value of arithmetic average roughness (Ra) of Comparative Example 3 was 1.601 nm.

(3) About processing efficiency About the processing efficiency by the processing method of Example 2 and Comparative Example 3 mentioned above, the processing efficiency was computed by the content similar to said (2).

The working efficiency in Example 2 was 201.3 nm / h, while the working efficiency in Comparative Example 3 was 72.26 nm / h.

(4) Surface roughness of processed surface of workpiece [Example 3 and Comparative Example 4]
As a processing method of Example 3 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 3 of the present invention, a GaN substrate (10 mm × 10 mm) as a workpiece is pressed against an alumina ceramic surface plate with a load of 250 g (250 g / cm ² ), and the alumina ceramic surface plate is rotated at a rotational speed. The sample holder was rotated at 250 rpm while rotating at 250 rpm, a rocking distance of 10 mm, and a rocking speed of 0.5 mm / s. Further, ozone gas (5 L / min) was supplied from the ozone supply unit to the contact portion between the alumina ceramic surface plate and the GaN substrate. Processing for 1 hour was performed in such a situation.
The same sample before carrying out the processing method of Example 3 was mechanically polished with diamond abrasive grains as Comparative Example 4.
About said Example 3 and Comparative Example 4, the surface roughness of the GaN board | substrate after a process was measured with the non-contact shape measuring machine, and evaluation was performed.

7 shows the result of Comparative Example 4 and FIG. 8 shows the result of Example 3.

As apparent from FIGS. 7 and 8, the machining surface of the workpiece is machined with high accuracy by the machining of Example 3 compared to the machining surface of the workpiece of Comparative Example 4, and in the measurement range of the machining surface. The value of arithmetic average roughness (Ra) was 0.483 nm, and it was found that it was processed smoothly. The arithmetic average roughness (Ra) of Comparative Example 4 was 2.837 nm.

[Example 4]
As a processing method of Example 4 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 4 of the present invention, GaN (gallium nitride) (10 mm × 10 mm) as a workpiece is pressed against a glass surface plate with a load of 0.5 kg, and the glass surface plate is rotated at 200 rpm. The sample holder was rotated at 31.25 rpm while rotating at a moving distance of 3 mm and a rocking speed of 0.1 mm / s. Further, ozone gas (5 L / min) containing alkaline electrolyzed water having a pH of 9.4 was supplied from the ozone supply unit to the contact portion between the glass surface plate and GaN. Processing for 1 hour was performed in such a situation.
About said Example 4, the surface roughness of the GaN before and after a process was measured with the non-contact shape measuring machine, and evaluation was performed.

9 shows the result before processing, and FIG. 10 shows the result after processing.

As apparent from FIGS. 9 and 10, the processed surface of the workpiece before processing is processed with high accuracy by the processing of Example 4, and the value of the arithmetic average roughness (Ra) in the measurement range of the processed surface is It was found to be 0.176 nm and processed smoothly. The arithmetic average roughness (Ra) in the measurement range of the surface to be processed before processing was 0.922 nm. In addition, the processing efficiency in Example 4 was 2979 nm / h, indicating a sufficient processing efficiency.

[Second Embodiment of the Invention]
Hereinafter, a mode for carrying out the present invention (hereinafter, referred to as “second embodiment of the invention”) will be described.
FIG. 11 is a schematic diagram for explaining a processing apparatus to which the present invention is applied. The processing apparatus 11 shown here is an insulating synthetic quartz surface plate 12 and charging that changes the charge amount of the synthetic quartz surface plate 12. It has a unit 13 and a sample holder 15 for holding an insulating single crystal diamond 14. The charging unit 13 is an example of a charging processing unit, and the single crystal diamond 14 is an example of a workpiece.

It should be noted that the work piece is polished by the single crystal diamond 14 as the work piece coming into contact with the upper surface of the synthetic quartz surface plate 12 (the upper surface in FIG. 11). The synthetic quartz surface plate 12 is an example of a processed member.

The charging unit 13 is disposed above the synthetic quartz surface plate 12 and supplies positive ions or anions to the upper surface of the synthetic quartz surface plate 12 to forcibly control the charge amount of the synthetic quartz surface plate 12 from the outside. . By controlling the amount of charge, the surface of the synthetic quartz surface plate 12 is modified, and the workpiece is polished by the electrochemical action that the single crystal diamond 14 comes into contact with.

Here, in the present embodiment, the case where the processing member is formed of the insulating synthetic quartz surface plate 12 is described as an example, but the charging amount can be controlled by the charging unit 13. Any other material is sufficient, and it is not always necessary to form the insulating synthetic quartz surface plate 12. For example, metals such as iron, nickel, Co, inorganic oxides such as SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, K ₂ O, CeO ₂ , SiC, SiN, may ceramics such as _Al 2 _{O 3,} and be formed of a constituent material consisting.

Further, the synthetic quartz surface plate 12 is fixed on a processing table 16 whose rotational speed can be controlled, and the synthetic quartz surface plate 12 is configured to be rotatable in the direction indicated by reference numeral A in FIG. Yes.

The sample holder 15 is configured to be rotatable in a direction indicated by a symbol B in FIG. 11 around a rotation shaft 17 that is eccentric with respect to the rotation shaft of the synthetic quartz surface plate 12, and holds the single crystal diamond 14. In this state, the single crystal diamond 14 and the synthetic quartz surface plate 12 are lowered from above to a position where they contact each other. In addition, the code | symbol Y in a figure has shown the direction which applies a load.

Here, in the present embodiment, the single crystal diamond 14 is described as an example of the workpiece held by the sample holder 15, but the workpiece is not limited to the single crystal diamond 14. Alternatively, diamond-related materials such as diamond, polycrystalline diamond, CVD diamond, and DLC film, hard brittle materials such as SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, and glass may be used.

Hereinafter, a processing method using the processing apparatus 11 configured as described above will be described. That is, an example of a processing method to which the present invention is applied will be described.

In an example of a processing method to which the present invention is applied, cations or anions are supplied from the charging unit 13 to the synthetic quartz surface plate 12 while rotating the synthetic quartz surface plate 12.

That is, by supplying cations or anions to the upper surface of the synthetic quartz surface plate 12, the amount of charge on the surface of the synthetic quartz surface plate 12 is controlled and the surface is modified.

Then, the surface of the single crystal diamond 14 is physically and chemically removed by rotating the synthetic quartz surface plate 12 in a state where the upper surface of the surface of the synthetic quartz surface plate 12 and the single crystal diamond 14 are in contact with each other. Will be.

As a modification (1) of the present embodiment, the configuration of the processing apparatus shown in FIG. 12 may be employed. In the processing apparatus 18 shown in FIG. 12, an ultraviolet light source 19 is further installed in the configuration of the processing apparatus 11 shown in FIG.

The ultraviolet light source 19 is located above the synthetic quartz surface plate 12 and is disposed at a position different from the charging unit 13 and irradiates the upper surface of the synthetic quartz surface plate 12 with ultraviolet light.

In the processing method of the modified example (1) of the present embodiment, while the synthetic quartz surface plate 12 is rotated, positive ions or anions are supplied from the charging unit 13 to the synthetic quartz surface plate 12, and the ultraviolet light source 19 is further supplied. Irradiate with UV light.

That is, the surface of the synthetic quartz surface plate 12 is cleaned and hydrophilicized by irradiating the upper surface of the synthetic quartz surface plate 12 with ultraviolet light. Specifically, the reaction sites with the atoms on the surface of the single crystal diamond 14 are increased by irradiating ultraviolet light to expose OH groups on the outermost surface portion of the synthetic quartz surface plate 12.

Then, the upper surface of the synthetic quartz surface plate 12 with the increased reaction sites contacts the single crystal diamond 14, and the synthetic quartz surface plate 12 rotates, so that the reaction sites are chemically coupled with atoms on the surface of the single crystal diamond 14. The surface of the diamond substrate is physically and chemically removed. That is, the electrochemical efficiency by controlling the charge amount and the effect of ultraviolet light irradiation are added, and the processing efficiency can be further improved.

Also, in the processing method to which the present invention is applied, a method of increasing the processing efficiency by adding conditions for humidifying the processed member may be employed.

[effect]
The processing apparatus to which the present invention is applied can be easily constructed only by arranging the charging unit in an existing apparatus.

(5) Surface roughness of the processed surface of the workpiece [Examples 5 to 7 and Comparative Examples 5 to 7]
As a processing method of Example 5 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 5 of the present invention, a single crystal diamond (3 mm × 3 mm) as a workpiece is pressed on a sapphire surface plate with a load of ² kg (22.2 kg / cm ² ), and the sapphire surface plate is rotated. The sample holder was rotated at 1000 rpm while rotating at several 250 rpm, a rocking distance of 3 mm, and a rocking speed of 0.1 mm / s. Anions were supplied from above the sapphire surface plate from the charging unit. Moreover, the humidification process was given from the upper direction of the sapphire surface plate with the humidification unit. Processing was performed for 1.5 hours in such a situation.
Example 6 was prepared by supplying cations from the charging unit in the same manner as in Example 5.
Unprocessed single crystal diamond was used as Comparative Example 5.
Further, Comparative Example 6 was used in the same manner as in Example 5 except that no anion or cation was supplied and no humidification treatment was performed. That is, this is a method in which the amount of charge of the sapphire surface plate is not controlled, and only physical processing is performed by relative displacement between the processing member and the workpiece.
Further, Comparative Example 7 was subjected to the humidification process from above the sapphire surface plate by the humidification unit in the same manner as Comparative Example 6.
For the above Examples 5 to 6 and Comparative Examples 5 to 7, the surface roughness of the processed surface was evaluated with a scanning white interferometer. The measurement range is 696 μm × 522 μm.

13 shows a scanning white interferometer image of Comparative Example 5, and FIG. 14 shows a scanning white interferometer image of Example 5.

As apparent from FIGS. 13 and 14, the processing surface of the workpiece is processed with high accuracy by the processing of Example 5 compared to the surface of the unprocessed workpiece of Comparative Example 5, and the measurement range of the processing surface The value of the arithmetic average roughness (Ra) at 0.38 was 0.308 nm, indicating that it was processed smoothly. The arithmetic average roughness (Ra) of Comparative Example 5 was 8.118 nm.
Although not shown, the processed surface of the workpiece is also processed with high accuracy in the processing of Example 6, and the value of the arithmetic average roughness (Ra) in the measurement range of the processed surface is 0.341 nm, which is smooth. It turned out that it was processed.
On the other hand, in the processing of Comparative Example 6 in which no anion or cation was supplied, the arithmetic average roughness (Ra) in the measurement range of the processed surface was 2.595 nm.

(6) About processing efficiency The processing efficiency by the processing methods of Examples 5 to 6 and Comparative Examples 6 to 7 described above was confirmed as follows.
A groove having a predetermined depth was formed in the single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in the groove depth before and after the machining.

The processing efficiency in Example 5 was 572.2 nm / h, and the processing efficiency in Example 6 was 454.3 nm / h, indicating sufficient processing efficiency.
On the other hand, the processing efficiency in Comparative Example 6 was 23.2 nm / h. Further, the processing efficiency in Comparative Example 7 was 99.7 nm / h.

(7) Surface roughness of the processed surface of the workpiece [Examples 7 to 8 and Comparative Example 8]
As a processing method of Example 7 of the present invention, an ultraviolet light source was further installed in the apparatus configuration of the processing method of Example 5 described above, and processing was performed under the condition of irradiating the sapphire surface plate with ultraviolet light. Further, in Example 7, as in Example 5, anions were supplied from the charging unit from above the sapphire surface plate. Moreover, the humidification process was given from the upper direction of the sapphire surface plate with the humidification unit. The other conditions are the same as in Example 5.
Example 8 was prepared by supplying cations from the charging unit in the same manner as in Example 7.
Unprocessed single crystal diamond was used as Comparative Example 8.
For Examples 7 to 8 and Comparative Example 8 described above, the surface roughness of the processed surface was evaluated with a scanning white interferometer. The measurement range is 696 μm × 522 μm.

15 shows a scanning white interferometer image of Comparative Example 8, and FIG. 16 shows a scanning white interferometer image of Example 7.

As apparent from FIGS. 15 and 16, the processing surface of the workpiece is processed with high accuracy by the processing of Example 7 as compared with the surface of the unprocessed workpiece of Comparative Example 8, and the measurement range of the processing surface The value of the arithmetic average roughness (Ra) was 0.625 nm, and it was found that the film was processed smoothly. The value of arithmetic average roughness (Ra) of Comparative Example 8 was 4.320 nm.
Further, although not shown, the processed surface of the workpiece is also processed with high accuracy in the processing of Example 8, and the value of the arithmetic average roughness (Ra) in the measurement range of the processed surface is 0.924 nm, which is smooth. It turned out that it was processed.

(8) About processing efficiency The processing efficiency by the processing methods of Examples 7 to 8 and Comparative Examples 9 to 10 described above was confirmed as follows.
Comparative Example 9 is a method in which ultraviolet light irradiation and humidification treatment are performed in the processing method of Example 7, but no anion is supplied from the charging unit. That is, this is a process in which the amount of charge of the sapphire surface plate is not controlled and only the irradiation with ultraviolet light is performed. The other processing conditions are the same as the processing method of Example 7.
Further, in a method similar to that of Comparative Example 9, a humidifying unit that did not perform humidification treatment from above the sapphire surface plate was designated as Comparative Example 10.
A groove having a predetermined depth was formed in the single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in the groove depth before and after the machining.

The processing efficiency in Example 7 was 3741.4 nm / h or more, and the processing efficiency in Example 8 was 2858.9 nm / h, indicating a sufficient processing efficiency. It became clear that the processing efficiency of Example 7 and Example 8 is a method which shows much higher processing efficiency than the processing efficiency of Example 5 and Example 6 mentioned above.
On the other hand, the processing efficiency in Comparative Example 9 was 543.4 nm / h or more. Further, the processing efficiency in Comparative Example 10 was 238.1 nm / h.
As described above, the processing efficiency was calculated by calculating the amount of change in the depth of the groove before and after the processing was performed on the single crystal diamond, which is the workpiece, in advance. In addition, since the single crystal diamond groove disappeared in the processing of Comparative Example 9, the numerical value of the processing efficiency of Example 7 was “3741.4 nm / h or more”, and the processing efficiency of Comparative Example 9 was “543.4 nm / h or more. ".

(9) Surface potential of workpiece [Examples 9 to 11 and Comparative Example 11]
As a processing method of Example 9 of the present invention, the charging unit is removed from the apparatus configuration of the processing method of Example 5 described above (no humidification process is performed), and the processing member is changed from a sapphire surface plate to a synthetic quartz surface plate. In Example 9, N ₂ gas was supplied in the vicinity of a processing point which is a contact portion between a surface plate and a single crystal diamond which is a workpiece. Processing was performed for 1.5 hours in such a situation.
Example 10 was subjected to humidification treatment by a humidification unit in the same manner as in Example 9.
Example 11 was prepared by supplying anions from the charging unit in the same manner as in Example 10.
Further, Comparative Example 11 was obtained by supplying no N ₂ gas from the processing method of Example 9.
For Examples 9 to 11 and Comparative Example 11 above, the surface potential of the synthetic quartz surface plate was measured with a surface potential meter to evaluate the charge amount.

17 to 20 show the relationship between the surface potential and the processing time in a graph. 17 shows the results of Example 9, FIG. 18 shows the results of Example 10, FIG. 19 shows the results of Example 11, and FIG. The vertical axis of the graph is the surface potential, and the horizontal axis is the processing time (min).

As apparent from FIG. 17, it was found that the surface potential of the surface plate was controlled within a certain range by supplying N ₂ gas to the synthetic quartz surface plate. Further, as apparent from FIGS. 18 and 19, the surface potential of the surface plate can be obtained by using both N ₂ gas supply and humidification treatment, or N ₂ gas supply and humidification treatment and ion supply from the charging unit in combination. It has been found that can be controlled even more strictly.

(10) Surface roughness of the processed surface of the workpiece For Examples 9 to 11 and Comparative Example 11 described above, the surface roughness of the processed surface was measured with a scanning white light interferometer in the same manner as the method described above. evaluated.

21 to 24 show scanning white interferometer images. 21 shows the results of Example 9, FIG. 22 shows the results of Example 10, FIG. 23 shows the results of Example 11, and FIG.

As apparent from FIGS. 21 and 24, the machining surface of the workpiece is machined with high accuracy by the machining of Example 9 as compared to the surface of the unmachined workpiece of Comparative Example 11, and the measurement range of the machining surface The value of arithmetic average roughness (Ra) was 0.565 nm, and it was found that the film was processed smoothly. The value of arithmetic average roughness (Ra) of Comparative Example 11 was 1.805 nm.
Further, as shown in FIGS. 22 and 23, in the processing of Example 10 and Example 11, the processed surface of the workpiece is processed with higher accuracy, and the arithmetic average in the measurement range of the processed surface of Example 6 is obtained. The value of roughness (Ra) was 0.184 nm, and the value of arithmetic average roughness (Ra) in the measurement range of the work surface of Example 11 was 0.149 nm, and it was processed smoothly. I understood.

(11) Regarding processing efficiency With respect to Examples 9 to 11 and Comparative Example 11 described above, the processing efficiency was evaluated in the same manner as the above-described method.

The processing efficiency in Example 9 is 586.2 nm / h, the processing efficiency in Example 10 is 1261.8 nm / h, and the processing efficiency in Example 11 is 1560 nm / h. In particular, Example 10 and Example 11 are sufficient. Showed high processing efficiency.
On the other hand, the processing efficiency in Comparative Example 11 was 38.33 nm / h.

DESCRIPTION OF SYMBOLS 1 Processing apparatus 2 Sapphire surface plate 3 Single crystal diamond 4 Sample holder 5 Ozone supply part 6 Processing table 7 Rotating shaft 11 Processing apparatus 12 Synthetic quartz surface plate 13 Charging unit 14 Single crystal diamond 15 Sample holder 16 Processing table 17 Rotating shaft 18 Processing Equipment 19 Ultraviolet light source

Claims

A processing method comprising the steps of bringing a workpiece made of a metal oxide into contact with a workpiece, supplying ozone gas to a contact portion, and displacing the workpiece in contact with the workpiece.
The processing method according to claim 1, wherein ozone gas is decomposed by frictional heat generated at the contact site.
The processed member is any one of single crystal sapphire composed of Al 2 O 3 , corundum, sapphire glass, sapphire crystal, polycrystalline alumina, alumina ceramic, and glass mainly composed of SiO 2. Consists of
The processing method according to claim 1, wherein the workpiece is made of any one of diamond, polycrystalline diamond, CVD diamond, and a DLC film.
The workpiece is made of glass whose main component is SiO 2,
The processing method according to claim 1, wherein the workpiece is made of SiC.
The processing method according to claim 1, wherein at least one of the processed member or the workpiece is humidified.
The processing method according to claim 1, wherein the ozone gas contains an alkaline solution.
The processing method according to claim 6, wherein the alkaline solution is alkaline electrolyzed water.
The processing method according to any one of claims 1 to 7, wherein at least one of a cation and an anion is supplied to at least one of the processing member or the workpiece to control a charge amount.
The processing method according to claim 1, wherein a charge amount is controlled by supplying N 2 gas to a contact portion between the processing member and the workpiece.
A step of bringing a workpiece made of a metal oxide into contact with a workpiece, supplying ozone gas to a contact site, and displacing the workpiece in a state of being in contact with the workpiece;
The processed member is made of any one of alumina ceramic or glass mainly composed of SiO 2 ,
The workpiece is made of GaN.
The processing method according to claim 10, wherein the ozone gas contains alkaline electrolyzed water.
A workpiece made of a metal oxide;
A holding mechanism for holding a predetermined workpiece in contact with the processing member;
An ozone gas supply unit for supplying ozone gas to a contact portion between the processed member and the workpiece;
A processing apparatus comprising: a drive unit that displaces the processing member in a state where the processing member and the workpiece are in contact with each other.
The processing apparatus according to claim 12, wherein frictional heat is generated at the contact portion between the processing member and the workpiece.
The processed member is made of any one of single-crystal sapphire composed of Al 2 O 3 , corundum, sapphire glass, sapphire crystal, polycrystalline alumina, and glass mainly composed of alumina ceramics SiO 2. Become
The processing apparatus according to claim 12 or 13, wherein the workpiece includes any one of diamond, polycrystalline diamond, CVD diamond, and a DLC film.
The workpiece is made of glass whose main component is SiO 2,
The processing apparatus according to claim 12, wherein the workpiece is made of SiC.
The processing apparatus of Claim 12 thru | or 15 provided with the humidification process part which humidifies the said process member or the said to-be-processed object.
The processing apparatus according to claim 12, wherein the ozone gas contains an alkaline solution.
The processing apparatus according to claim 17, wherein the alkaline solution is alkaline electrolyzed water.
The processing according to any one of claims 12 to 18, further comprising: a charging processing unit that controls at least one of a cation and an anion to control at least one of the processing member or the workpiece. apparatus.
It said processing member and the processing method according to claim 12 or claim 19 comprising a N 2 gas supply unit for supplying N 2 gas to control the charge quantity to the contact portion between the workpiece.
A workpiece made of a metal oxide;
A holding mechanism for holding a predetermined workpiece in contact with the processing member;
An ozone gas supply unit for supplying ozone gas to a contact portion between the processed member and the workpiece;
A drive unit that displaces the processing member in a state where the processing member and the workpiece are in contact with each other;
The processed member is made of any one of alumina ceramic or glass mainly composed of SiO 2 ,
The workpiece is made of GaN.
The processing apparatus according to claim 21, wherein the ozone gas contains alkaline electrolyzed water.
At least one of a cation or an anion is supplied to at least one of a workpiece or a workpiece processed by the workpiece to control the amount of charge, and the workpiece and the workpiece are A processing method comprising a step of relatively displacing in a contacted state.
The processing method according to claim 23, wherein an anion is supplied to at least one of the processed member or the workpiece.
The processing method according to claim 23, wherein a cation is supplied to at least one of the processing member or the workpiece.
The processing method according to claim 23, wherein a cation and an anion are supplied to at least one of the processing member or the workpiece.
27. The processing method according to claim 23, wherein at least one of the processing member or the workpiece is humidified.
The processing method according to claim 23, wherein at least one of the processed member or the processed member is an insulator.
29. The processing method according to claim 23, wherein the surface of the processed member is irradiated with ultraviolet light or plasma to clean and hydrophilize the surface of the processed member.
The processing method according to any one of claims 23 to 29, wherein N 2 gas is supplied to a contact portion between the processing member and the workpiece.
The processed member is made of any one of metal, inorganic oxide, and ceramics,
The processing method according to any one of claims 23 to 30, wherein the workpiece includes any one of single crystal diamond, polycrystalline diamond, CVD diamond, and a DLC film.
Processing members;
A charge processing unit for controlling the charge amount by supplying at least one of a cation or an anion to at least one of the processed member or a workpiece processed by the processed member;
A holding mechanism for holding a predetermined workpiece;
A processing apparatus comprising: a drive unit that relatively displaces the processing member and the workpiece while the processing member and the workpiece are in contact with each other.
The processing apparatus of Claim 32 provided with the humidification process part which humidifies the said process member or the said to-be-processed object.
The processing apparatus according to claim 32 or 33, further comprising a cleaning and hydrophilization processing unit that hydrophilizes the surface of the processing member.
It said processing member and the processing device according the to claim 32 or claim 34 comprising a N 2 gas supply unit for supplying a N 2 gas to the contact portion of the workpiece.
The N 2 gas is supplied to the contact portion between the processing member and the workpiece processed by the processing member to control the charge amount, and the processing member and the workpiece are relatively in contact with each other. A processing method comprising a step of displacing.
The processing method according to claim 36, wherein at least one of the processed member or the workpiece is humidified.
Processing members;
An N 2 gas supply unit for controlling the charge amount by supplying N 2 gas to a contact portion between the processed member and a workpiece processed by the processed member;
A holding mechanism for holding a predetermined workpiece;
A processing apparatus comprising: a drive unit that relatively displaces the processing member and the workpiece while the processing member and the workpiece are in contact with each other.
The processing apparatus of Claim 38 provided with the humidification process part which humidifies the said process member or the said to-be-processed object.