JP6925250B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP6925250B2
JP6925250B2 JP2017236455A JP2017236455A JP6925250B2 JP 6925250 B2 JP6925250 B2 JP 6925250B2 JP 2017236455 A JP2017236455 A JP 2017236455A JP 2017236455 A JP2017236455 A JP 2017236455A JP 6925250 B2 JP6925250 B2 JP 6925250B2
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impurity region
gate
trench
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Japanese (ja)
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JP2019106409A5 (enExample
JP2019106409A (ja
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尚 長田
尚 長田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2017236455A priority Critical patent/JP6925250B2/ja
Priority to US16/175,386 priority patent/US10672897B2/en
Publication of JP2019106409A publication Critical patent/JP2019106409A/ja
Priority to US16/859,295 priority patent/US11183589B2/en
Publication of JP2019106409A5 publication Critical patent/JP2019106409A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inverter Devices (AREA)
JP2017236455A 2017-12-08 2017-12-08 半導体装置およびその製造方法 Active JP6925250B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017236455A JP6925250B2 (ja) 2017-12-08 2017-12-08 半導体装置およびその製造方法
US16/175,386 US10672897B2 (en) 2017-12-08 2018-10-30 Semiconductor device and manufacturing method therefor
US16/859,295 US11183589B2 (en) 2017-12-08 2020-04-27 Semiconductor device and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017236455A JP6925250B2 (ja) 2017-12-08 2017-12-08 半導体装置およびその製造方法

Publications (3)

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JP2019106409A JP2019106409A (ja) 2019-06-27
JP2019106409A5 JP2019106409A5 (enExample) 2020-05-28
JP6925250B2 true JP6925250B2 (ja) 2021-08-25

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JP (1) JP6925250B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018148154A (ja) * 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置および電子機器
US11069770B2 (en) * 2018-10-01 2021-07-20 Ipower Semiconductor Carrier injection control fast recovery diode structures
EP3863062B1 (en) * 2020-02-07 2025-05-21 Infineon Technologies Austria AG Semiconductor transistor device and method of manufacturing the same
KR102802221B1 (ko) * 2020-11-06 2025-05-02 삼성디스플레이 주식회사 디스플레이 장치
GB2601808B (en) 2020-12-11 2023-10-18 Mqsemi Ag Semiconductor device
KR102920261B1 (ko) * 2021-10-22 2026-01-29 주식회사 디비하이텍 역도전 절연 게이트 양극성 트랜지스터 및 제조방법
CN116053318B (zh) * 2021-10-28 2026-07-10 美垦半导体技术有限公司 一种半导体器件及其制备方法
JP7905268B2 (ja) * 2022-11-30 2026-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5831598B2 (ja) * 2010-12-08 2015-12-09 株式会社デンソー 絶縁ゲート型半導体装置
JP2012256628A (ja) * 2011-06-07 2012-12-27 Renesas Electronics Corp Ｉｇｂｔおよびダイオード
JP5973730B2 (ja) 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
WO2015022989A1 (ja) * 2013-08-15 2015-02-19 富士電機株式会社 半導体装置
WO2015029175A1 (ja) * 2013-08-29 2015-03-05 株式会社日立製作所 半導体装置およびその製造方法
JP5941448B2 (ja) * 2013-09-11 2016-06-29 株式会社東芝 半導体装置
JP2015177010A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置およびその製造方法
JP6448434B2 (ja) 2015-03-25 2019-01-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101745776B1 (ko) * 2015-05-12 2017-06-28 매그나칩 반도체 유한회사 전력용 반도체 소자
JP6605870B2 (ja) * 2015-07-30 2019-11-13 ルネサスエレクトロニクス株式会社 半導体装置
JP6624973B2 (ja) 2016-03-03 2019-12-25 ルネサスエレクトロニクス株式会社 半導体装置
JP6674395B2 (ja) * 2017-02-03 2020-04-01 株式会社東芝 半導体装置

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JP2019106409A (ja) 2019-06-27
US11183589B2 (en) 2021-11-23
US20200259005A1 (en) 2020-08-13
US20190181255A1 (en) 2019-06-13
US10672897B2 (en) 2020-06-02

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