JP6918931B2 - 半導体ウエハ検査のための欠陥マーキング - Google Patents

半導体ウエハ検査のための欠陥マーキング Download PDF

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JP6918931B2
JP6918931B2 JP2019516495A JP2019516495A JP6918931B2 JP 6918931 B2 JP6918931 B2 JP 6918931B2 JP 2019516495 A JP2019516495 A JP 2019516495A JP 2019516495 A JP2019516495 A JP 2019516495A JP 6918931 B2 JP6918931 B2 JP 6918931B2
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wafer
defect
embedded
tool
mark
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JP2019535138A (ja
JP2019535138A5 (enExample
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デヴィッド ダブリュ ショート
デヴィッド ダブリュ ショート
スティーブン アール ランゲ
スティーブン アール ランゲ
ジュンウェイ ウェイ
ジュンウェイ ウェイ
ダニエル カップ
ダニエル カップ
チャールズ アムスデン
チャールズ アムスデン
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/44—Sample treatment involving radiation, e.g. heat
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9506—Optical discs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0614—Marking devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/888—Marking defects

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  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Manufacturing & Machinery (AREA)
JP2019516495A 2016-09-27 2017-09-26 半導体ウエハ検査のための欠陥マーキング Active JP6918931B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662400182P 2016-09-27 2016-09-27
US62/400,182 2016-09-27
US15/430,817 2017-02-13
US15/430,817 US10082470B2 (en) 2016-09-27 2017-02-13 Defect marking for semiconductor wafer inspection
PCT/US2017/053540 WO2018064072A1 (en) 2016-09-27 2017-09-26 Defect marking for semiconductor wafer inspection

Publications (3)

Publication Number Publication Date
JP2019535138A JP2019535138A (ja) 2019-12-05
JP2019535138A5 JP2019535138A5 (enExample) 2020-11-12
JP6918931B2 true JP6918931B2 (ja) 2021-08-11

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US (1) US10082470B2 (enExample)
JP (1) JP6918931B2 (enExample)
KR (1) KR102235580B1 (enExample)
CN (1) CN109690748B (enExample)
SG (1) SG11201900913VA (enExample)
TW (1) TWI722246B (enExample)
WO (1) WO2018064072A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10928740B2 (en) * 2017-02-03 2021-02-23 Kla Corporation Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer
US20190238796A1 (en) 2017-05-11 2019-08-01 Jacob Nathaniel Allen Object Inspection System And Method For Inspecting An Object
US11035804B2 (en) 2017-06-28 2021-06-15 Kla Corporation System and method for x-ray imaging and classification of volume defects
KR102037748B1 (ko) * 2017-12-06 2019-11-29 에스케이실트론 주식회사 웨이퍼의 결함 영역을 평가하는 방법
US11054250B2 (en) * 2018-04-11 2021-07-06 International Business Machines Corporation Multi-channel overlay metrology
TWI662250B (zh) * 2018-05-24 2019-06-11 仲鈜科技股份有限公司 標記載體上的多個被動元件中的缺陷品的系統及其方法
CN108760753B (zh) * 2018-05-31 2023-12-12 永捷电子（始兴）有限公司 Mark点检测装置及其检测方法
WO2020026843A1 (ja) * 2018-07-30 2020-02-06 株式会社ポラテクノ マーキング装置、マーキング方法、偏光板の製造方法および偏光板
TWI708041B (zh) * 2018-10-17 2020-10-21 所羅門股份有限公司 檢測與標記瑕疵的方法
US11231376B2 (en) * 2019-08-29 2022-01-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for semiconductor wafer inspection and system thereof
US11798153B2 (en) * 2019-10-02 2023-10-24 Kla Corporation Frequency domain enhancement of low-SNR flat residue/stain defects for effective detection
KR20230024390A (ko) 2020-06-17 2023-02-20 이노비전 소프트웨어 솔루션즈, 인크. 결함 복원을 위한 시스템 및 방법
CN114192440B (zh) * 2020-09-18 2024-05-03 中国科学院微电子研究所 一种不合格晶圆的检出装置及检出方法、晶圆制造设备
US11513079B2 (en) 2020-10-09 2022-11-29 Fei Company Method and system for wafer defect inspection
US20220196723A1 (en) * 2020-12-18 2022-06-23 Kla Corporation System and method for automatically identifying defect-based test coverage gaps in semiconductor devices
JP7528870B2 (ja) * 2021-06-08 2024-08-06 信越半導体株式会社 ウェーハマーキング方法及び窒化物半導体デバイスの製造方法並びに窒化物半導体基板
US12293506B2 (en) 2021-07-20 2025-05-06 Inovision Software Solutions, Inc. Method to locate defects in e-coat
CN113884502A (zh) * 2021-12-07 2022-01-04 武汉华工激光工程有限责任公司 基于线阵相机的载板检测及激光标记系统和方法
TWI858453B (zh) * 2022-01-06 2024-10-11 日商捷進科技有限公司 半導體製造裝置、檢查裝置及半導體裝置的製造方法
US12505553B2 (en) * 2022-02-15 2025-12-23 Vitrox Technologies Sdn Bhd Inspection system
JP7184227B1 (ja) * 2022-02-18 2022-12-06 三菱電機株式会社 半導体チップのマーキング方法、半導体チップの製造方法および半導体チップ
TWI833390B (zh) * 2022-02-23 2024-02-21 南亞科技股份有限公司 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體
US12118709B2 (en) 2022-02-23 2024-10-15 Nanya Technology Corporation Method for identifying cause of manufacturing defects
US12175652B2 (en) 2022-02-23 2024-12-24 Nanya Technology Corporation System and non-transitory computer-readable medium for identifying cause of manufacturing defects
CN117197025B (zh) * 2022-05-31 2026-02-24 鸿海精密工业股份有限公司 瑕疵检测方法、电子设备及存储介质
TWI860523B (zh) * 2022-05-31 2024-11-01 鴻海精密工業股份有限公司 瑕疵檢測方法、電子設備及計算機可讀存儲媒體
KR102734303B1 (ko) 2022-09-30 2024-11-26 주식회사 에스에프에이 Sem-fib 분석 시스템 및 sem-fib 분석 방법
KR102813550B1 (ko) 2022-11-30 2025-05-30 주식회사 에스에프에이 부도체 샘플의 sem 자동 검사를 위한 자동초점 조정방법 및 부도체 샘플의 sem 자동 검사 시스템
CN116013800B (zh) * 2022-12-30 2024-02-27 胜科纳米(苏州)股份有限公司 一种缺陷定位方法、装置、电子设备及存储介质
CN116718602A (zh) * 2023-06-28 2023-09-08 上海华力微电子有限公司 一种失效定位及失效分析方法
CN117038491A (zh) * 2023-08-29 2023-11-10 西安奕斯伟材料科技股份有限公司 一种硅片缺陷测量方法及装置
US20250308902A1 (en) * 2024-03-26 2025-10-02 Tokyo Electron Limited Using laser based system for mean of shaping of unsingulated & singulated dies by substrate lattice manipulation

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271916B1 (en) 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
KR100279962B1 (ko) * 1997-12-29 2001-03-02 윤종용 반도체 웨이퍼의 벌크디펙트의 모폴로지 분석방법 및 표면디펙트의 모폴로지 분석방법
US6208411B1 (en) 1998-09-28 2001-03-27 Kla-Tencor Corporation Massively parallel inspection and imaging system
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
JP2002340990A (ja) * 2001-05-15 2002-11-27 Jeol Ltd 半導体デバイスの評価方法及び装置。
US7130039B2 (en) 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
US7027142B2 (en) 2002-05-06 2006-04-11 Applied Materials, Israel, Ltd. Optical technique for detecting buried defects in opaque films
US7295303B1 (en) 2004-03-25 2007-11-13 Kla-Tencor Technologies Corporation Methods and apparatus for inspecting a sample
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7664608B2 (en) * 2006-07-14 2010-02-16 Hitachi High-Technologies Corporation Defect inspection method and apparatus
JP2009014510A (ja) 2007-07-04 2009-01-22 Hitachi High-Technologies Corp 検査方法及び検査装置
JP5873227B2 (ja) 2007-12-06 2016-03-01 エフ・イ−・アイ・カンパニー デコレーションを用いたスライス・アンド・ビュー
JP5425593B2 (ja) 2009-11-13 2014-02-26 ルネサスエレクトロニクス株式会社 Ｅｕｖマスクの欠陥検査方法、ｅｕｖマスクの製造方法、ｅｕｖマスク検査装置、および、半導体装置の製造方法
JP5560921B2 (ja) * 2010-06-08 2014-07-30 新日鐵住金株式会社 欠陥識別マーカー付き基板の製造方法
JP5659086B2 (ja) * 2011-05-30 2015-01-28 株式会社東芝 反射型マスクの欠陥修正方法
DE102011079382B4 (de) 2011-07-19 2020-11-12 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske
JP5712079B2 (ja) * 2011-07-29 2015-05-07 株式会社日立ハイテクノロジーズ 欠陥検査装置および欠陥検査方法
US9053390B2 (en) * 2012-08-14 2015-06-09 Kla-Tencor Corporation Automated inspection scenario generation
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US8912495B2 (en) 2012-11-21 2014-12-16 Kla-Tencor Corp. Multi-spectral defect inspection for 3D wafers
US9075027B2 (en) * 2012-11-21 2015-07-07 Kla-Tencor Corporation Apparatus and methods for detecting defects in vertical memory
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US9389349B2 (en) 2013-03-15 2016-07-12 Kla-Tencor Corporation System and method to determine depth for optical wafer inspection
US9696264B2 (en) * 2013-04-03 2017-07-04 Kla-Tencor Corporation Apparatus and methods for determining defect depths in vertical stack memory
US9734422B2 (en) * 2014-11-12 2017-08-15 Kla-Tencor Corporation System and method for enhanced defect detection with a digital matched filter
US10747830B2 (en) * 2014-11-21 2020-08-18 Mesh Labs Inc. Method and system for displaying electronic information
US9599573B2 (en) * 2014-12-02 2017-03-21 Kla-Tencor Corporation Inspection systems and techniques with enhanced detection

Also Published As

Publication number Publication date
TWI722246B (zh) 2021-03-21
SG11201900913VA (en) 2019-04-29
WO2018064072A1 (en) 2018-04-05
KR102235580B1 (ko) 2021-04-01
CN109690748A (zh) 2019-04-26
JP2019535138A (ja) 2019-12-05
US20180088056A1 (en) 2018-03-29
TW201814873A (zh) 2018-04-16
KR20190049890A (ko) 2019-05-09
CN109690748B (zh) 2020-07-28
US10082470B2 (en) 2018-09-25

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