JP6905498B2 - 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 - Google Patents

窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 Download PDF

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JP6905498B2
JP6905498B2 JP2018172339A JP2018172339A JP6905498B2 JP 6905498 B2 JP6905498 B2 JP 6905498B2 JP 2018172339 A JP2018172339 A JP 2018172339A JP 2018172339 A JP2018172339 A JP 2018172339A JP 6905498 B2 JP6905498 B2 JP 6905498B2
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light emitting
nitride semiconductor
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emitting device
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JP2019054247A5 (https=
JP2019054247A (ja
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シリル ペルノ
シリル ペルノ
勇介 松倉
勇介 松倉
優太 古澤
優太 古澤
和田　貢
貢 和田
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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JP2018172339A 2017-09-15 2018-09-14 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 Active JP6905498B2 (ja)

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JP2018172339A JP6905498B2 (ja) 2017-09-15 2018-09-14 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法

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CN113097359B (zh) * 2021-03-29 2022-08-26 厦门士兰明镓化合物半导体有限公司 半导体发光元件
EP4216291A1 (en) 2022-01-19 2023-07-26 Nichia Corporation Light emitting element and method of manufacturing same
JP7434416B2 (ja) * 2022-05-31 2024-02-20 日機装株式会社 窒化物半導体発光素子
JP2025017479A (ja) * 2023-07-25 2025-02-06 日機装株式会社 窒化物半導体発光素子

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JP3594826B2 (ja) * 1999-02-09 2004-12-02 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
JP4895587B2 (ja) * 2005-11-29 2012-03-14 ローム株式会社 窒化物半導体発光素子
US8525221B2 (en) * 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
JP5881393B2 (ja) * 2011-12-06 2016-03-09 国立大学法人山口大学 窒化物半導体発光素子およびその製造方法
JP6026116B2 (ja) * 2012-03-09 2016-11-16 シャープ株式会社 窒化物半導体発光素子およびその製造方法
KR102075987B1 (ko) * 2014-02-04 2020-02-12 삼성전자주식회사 질화물 반도체 발광소자
JP6306200B2 (ja) * 2014-09-22 2018-04-04 シャープ株式会社 窒化物半導体発光素子
JP6616126B2 (ja) * 2015-08-25 2019-12-04 シャープ株式会社 窒化物半導体発光素子

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