JP6903483B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP6903483B2
JP6903483B2 JP2017091326A JP2017091326A JP6903483B2 JP 6903483 B2 JP6903483 B2 JP 6903483B2 JP 2017091326 A JP2017091326 A JP 2017091326A JP 2017091326 A JP2017091326 A JP 2017091326A JP 6903483 B2 JP6903483 B2 JP 6903483B2
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JP
Japan
Prior art keywords
transistor
conductor
oxide semiconductor
wiring
oxide
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JP2017091326A
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English (en)
Japanese (ja)
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JP2017204634A (ja
Inventor
正己 遠藤
正己 遠藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2017204634A publication Critical patent/JP2017204634A/ja
Priority to JP2021103748A priority Critical patent/JP2021158373A/ja
Application granted granted Critical
Publication of JP6903483B2 publication Critical patent/JP6903483B2/ja
Priority to JP2023064764A priority patent/JP7485823B2/ja
Priority to JP2024074721A priority patent/JP7628643B2/ja
Priority to JP2025012596A priority patent/JP7788576B2/ja
Priority to JP2025238266A priority patent/JP2026034497A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
JP2017091326A 2016-05-04 2017-05-01 記憶装置 Active JP6903483B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021103748A JP2021158373A (ja) 2016-05-04 2021-06-23 半導体装置
JP2023064764A JP7485823B2 (ja) 2016-05-04 2023-04-12 半導体装置
JP2024074721A JP7628643B2 (ja) 2016-05-04 2024-05-02 半導体装置
JP2025012596A JP7788576B2 (ja) 2016-05-04 2025-01-29 半導体装置
JP2025238266A JP2026034497A (ja) 2016-05-04 2025-12-08 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016092865 2016-05-04
JP2016092865 2016-05-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021103748A Division JP2021158373A (ja) 2016-05-04 2021-06-23 半導体装置

Publications (2)

Publication Number Publication Date
JP2017204634A JP2017204634A (ja) 2017-11-16
JP6903483B2 true JP6903483B2 (ja) 2021-07-14

Family

ID=60244027

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2017091326A Active JP6903483B2 (ja) 2016-05-04 2017-05-01 記憶装置
JP2021103748A Withdrawn JP2021158373A (ja) 2016-05-04 2021-06-23 半導体装置
JP2023064764A Active JP7485823B2 (ja) 2016-05-04 2023-04-12 半導体装置
JP2024074721A Active JP7628643B2 (ja) 2016-05-04 2024-05-02 半導体装置
JP2025012596A Active JP7788576B2 (ja) 2016-05-04 2025-01-29 半導体装置
JP2025238266A Pending JP2026034497A (ja) 2016-05-04 2025-12-08 半導体装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2021103748A Withdrawn JP2021158373A (ja) 2016-05-04 2021-06-23 半導体装置
JP2023064764A Active JP7485823B2 (ja) 2016-05-04 2023-04-12 半導体装置
JP2024074721A Active JP7628643B2 (ja) 2016-05-04 2024-05-02 半導体装置
JP2025012596A Active JP7788576B2 (ja) 2016-05-04 2025-01-29 半導体装置
JP2025238266A Pending JP2026034497A (ja) 2016-05-04 2025-12-08 半導体装置

Country Status (2)

Country Link
US (1) US10008502B2 (https=)
JP (6) JP6903483B2 (https=)

Families Citing this family (6)

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US9564217B1 (en) * 2015-10-19 2017-02-07 United Microelectronics Corp. Semiconductor memory device having integrated DOSRAM and NOSRAM
US10276578B2 (en) * 2017-06-25 2019-04-30 United Microelectronics Corp. Dynamic oxide semiconductor random access memory(DOSRAM) having a capacitor electrically connected to the random access memory (SRAM)
US10614875B2 (en) 2018-01-30 2020-04-07 Micron Technology, Inc. Logical operations using memory cells
JP7410935B2 (ja) 2018-05-24 2024-01-10 ザ リサーチ ファウンデーション フォー ザ ステイト ユニバーシティー オブ ニューヨーク 容量性センサ
US10755766B2 (en) 2018-09-04 2020-08-25 Micron Technology, Inc. Performing logical operations using a logical operation component based on a rate at which a digit line is discharged
CN111725250B (zh) * 2020-06-29 2023-11-07 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板

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JP6653129B2 (ja) 2014-05-29 2020-02-26 株式会社半導体エネルギー研究所 記憶装置
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Also Published As

Publication number Publication date
JP7788576B2 (ja) 2025-12-18
JP2026034497A (ja) 2026-02-27
JP2023090745A (ja) 2023-06-29
JP7485823B2 (ja) 2024-05-16
JP7628643B2 (ja) 2025-02-10
JP2017204634A (ja) 2017-11-16
JP2021158373A (ja) 2021-10-07
JP2025061908A (ja) 2025-04-11
US10008502B2 (en) 2018-06-26
US20170323892A1 (en) 2017-11-09
JP2024100793A (ja) 2024-07-26

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