JP6887655B2 - ビスマス系誘電体用電極及びキャパシタ - Google Patents
ビスマス系誘電体用電極及びキャパシタ Download PDFInfo
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- JP6887655B2 JP6887655B2 JP2015044135A JP2015044135A JP6887655B2 JP 6887655 B2 JP6887655 B2 JP 6887655B2 JP 2015044135 A JP2015044135 A JP 2015044135A JP 2015044135 A JP2015044135 A JP 2015044135A JP 6887655 B2 JP6887655 B2 JP 6887655B2
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ここで、前記元素を少なくとも前記ビスマス系誘電体材料との界面側に含んでよい。
また、前記ビスマスを拡散しくい元素を金属、並びに前記元素の炭化物及び窒化物からなる群から選択される少なくとも一つの形態で含んでよい。
本発明の他の側面によれば、ビスマス系誘電体材料の膜と、前記膜に隣接した上記何れかの電極とを設けたキャパシタが与えられる。
成膜条件は以下の通りであった。
・レーザー:KrFエキシマレーザー(248nm)を使用した。パルス幅を10ns、強度を約3J/cm2、繰り返し周波数を5Hzとした。
・ターゲット:SrRuO3及び[BTO]0.6−[Bi(Mg,Nb)O]0.4(Bi2O3−8wt%過剰)
・基板温度:510℃
・雰囲気:酸素/オゾン
・集光レンズ−ターゲットア間距離:36.0cm
・ターゲット−基板間距離:3cm
この処理は1気圧の酸素雰囲気中で行った。また、その温度プロファイルを図3に示す。
Claims (2)
- ビスマス系誘電体材料に隣接して用いられるビスマス系誘電体材料用電極であって、
タンタルの炭化物を含む、ビスマス系誘電体材料用電極。 - ビスマス系誘電体材料の膜と、前記膜に隣接した請求項1に記載のビスマス系誘電体材料用電極とを設けたキャパシタ。
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JP2016164901A JP2016164901A (ja) | 2016-09-08 |
JP6887655B2 true JP6887655B2 (ja) | 2021-06-16 |
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Families Citing this family (1)
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CN115010493B (zh) * | 2022-05-31 | 2023-01-13 | 清华大学 | 一种高熵焦绿石介电陶瓷材料及其制备方法与应用 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5897818A (ja) * | 1981-12-07 | 1983-06-10 | 松下電器産業株式会社 | 薄膜コンデンサ |
JPH10135077A (ja) * | 1996-10-30 | 1998-05-22 | Kyocera Corp | 薄膜キャパシタ |
JP4109304B2 (ja) * | 1997-03-27 | 2008-07-02 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP3874521B2 (ja) * | 1998-01-13 | 2007-01-31 | 沖電気工業株式会社 | 強誘電体メモリ用電極の形成方法 |
JP2002076293A (ja) * | 2000-09-01 | 2002-03-15 | Matsushita Electric Ind Co Ltd | キャパシタ及び半導体装置の製造方法 |
US6613695B2 (en) * | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
JP4407112B2 (ja) * | 2001-11-26 | 2010-02-03 | パナソニック株式会社 | 磁器コンデンサ |
EP1598872A1 (en) * | 2003-02-27 | 2005-11-23 | TDK Corporation | High dielectric constant insulating film, thin-film capacitive element, thin-film multilayer capacitor, and method for manufacturing thin-film capacitive element |
JP4997757B2 (ja) * | 2005-12-20 | 2012-08-08 | 富士通株式会社 | 薄膜キャパシタ及びその製造方法、電子装置並びに回路基板 |
JP4483849B2 (ja) * | 2006-10-04 | 2010-06-16 | Tdk株式会社 | 強誘電体薄膜 |
JP5590224B2 (ja) * | 2011-03-25 | 2014-09-17 | 株式会社村田製作所 | 積層セラミックコンデンサおよびその製造方法 |
JP6020068B2 (ja) * | 2012-01-27 | 2016-11-02 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
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