JP2016164901A - ビスマス系誘電体用電極及びキャパシタ - Google Patents
ビスマス系誘電体用電極及びキャパシタ Download PDFInfo
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- JP2016164901A JP2016164901A JP2015044135A JP2015044135A JP2016164901A JP 2016164901 A JP2016164901 A JP 2016164901A JP 2015044135 A JP2015044135 A JP 2015044135A JP 2015044135 A JP2015044135 A JP 2015044135A JP 2016164901 A JP2016164901 A JP 2016164901A
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- electrode
- based dielectric
- dielectric material
- bismuth
- capacitor
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- 239000003990 capacitor Substances 0.000 title claims abstract description 14
- 229910052797 bismuth Inorganic materials 0.000 title claims description 12
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims description 12
- 239000003989 dielectric material Substances 0.000 claims abstract description 22
- 239000010936 titanium Substances 0.000 claims abstract description 11
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- 239000011777 magnesium Substances 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 239000010955 niobium Substances 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 4
- 239000011575 calcium Substances 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 4
- 239000011651 chromium Substances 0.000 claims abstract description 4
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 4
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- 239000011593 sulfur Substances 0.000 claims abstract description 4
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 239000010937 tungsten Substances 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000003405 preventing effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003411 electrode reaction Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 229910002703 Al K Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
ここで、前記元素を少なくとも前記ビスマス系誘電体材料との界面側に含んでよい。
また、前記ビスマスを拡散しくい元素を金属、並びに前記元素の炭化物及び窒化物からなる群から選択される少なくとも一つの形態で含んでよい。
本発明の他の側面によれば、ビスマス系誘電体材料の膜と、前記膜に隣接した上記何れかの電極とを設けたキャパシタが与えられる。
成膜条件は以下の通りであった。
・レーザー:KrFエキシマレーザー(248nm)を使用した。パルス幅を10ns、強度を約3J/cm2、繰り返し周波数を5Hzとした。
・ターゲット:SrRuO3及び[BTO]0.6−[Bi(Mg,Nb)O]0.4(Bi2O3−8wt%過剰)
・基板温度:510℃
・雰囲気:酸素/オゾン
・集光レンズ−ターゲットア間距離:36.0cm
・ターゲット−基板間距離:3cm
この処理は1気圧の酸素雰囲気中で行った。また、その温度プロファイルを図3に示す。
Claims (4)
- ベリリウム、マグネシウム、カルシウム、ストロンチウム、バリウム、スカンジウム、イットリウム、ランタン、チタン、ジルコニウム、ハフニウム、バナジウム、ニオブ、タンタル、クロム、モリブデン、タングステン、亜鉛、アルミニウム、ガリウム、インジウム、タリウム、硫黄、ゲルマニウム、スズ、砒素及びアンチモンからなる群から選択される少なくとも一の元素を含む、ビスマス系誘電体材料用電極。
- 前記元素を少なくとも前記ビスマス系誘電体材料との界面側に含む、ビスマス系誘電体材料用電極。
- 前記ビスマスを拡散しくい元素を金属、並びに前記元素の炭化物及び窒化物からなる群から選択される少なくとも一つの形態で含む、請求項1または2に記載のビスマス系誘電体材料用電極。
- ビスマス系誘電体材料の膜と、前記膜に隣接した請求項1から3の何れかの電極とを設けたキャパシタ。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115010493A (zh) * | 2022-05-31 | 2022-09-06 | 清华大学 | 一种高熵焦绿石介电陶瓷材料及其制备方法与应用 |
Citations (12)
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JPS5897818A (ja) * | 1981-12-07 | 1983-06-10 | 松下電器産業株式会社 | 薄膜コンデンサ |
JPH10135077A (ja) * | 1996-10-30 | 1998-05-22 | Kyocera Corp | 薄膜キャパシタ |
JPH11204743A (ja) * | 1998-01-13 | 1999-07-30 | Oki Electric Ind Co Ltd | 強誘電体メモリ用電極およびその形成方法 |
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JP2007081443A (ja) * | 1997-03-27 | 2007-03-29 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2007099618A (ja) * | 2006-10-04 | 2007-04-19 | Tdk Corp | 強誘電体薄膜 |
JP2007173386A (ja) * | 2005-12-20 | 2007-07-05 | Fujitsu Ltd | 薄膜キャパシタ及びその製造方法、電子装置並びに回路基板 |
WO2012133077A1 (ja) * | 2011-03-25 | 2012-10-04 | 株式会社村田製作所 | 積層セラミックコンデンサ、誘電体セラミック、積層セラミック電子部品および積層セラミックコンデンサの製造方法 |
JP2013173662A (ja) * | 2012-01-27 | 2013-09-05 | Tdk Corp | 誘電体磁器組成物および電子部品 |
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2015
- 2015-03-06 JP JP2015044135A patent/JP6887655B2/ja active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5897818A (ja) * | 1981-12-07 | 1983-06-10 | 松下電器産業株式会社 | 薄膜コンデンサ |
JPH10135077A (ja) * | 1996-10-30 | 1998-05-22 | Kyocera Corp | 薄膜キャパシタ |
JP2007081443A (ja) * | 1997-03-27 | 2007-03-29 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JPH11204743A (ja) * | 1998-01-13 | 1999-07-30 | Oki Electric Ind Co Ltd | 強誘電体メモリ用電極およびその形成方法 |
JP2002076293A (ja) * | 2000-09-01 | 2002-03-15 | Matsushita Electric Ind Co Ltd | キャパシタ及び半導体装置の製造方法 |
JP2004523885A (ja) * | 2000-11-24 | 2004-08-05 | エーエスエム アメリカ インコーポレイテッド | 堆積前の表面調整方法 |
JP2003224027A (ja) * | 2001-11-26 | 2003-08-08 | Matsushita Electric Ind Co Ltd | 磁器コンデンサ |
WO2004077566A1 (ja) * | 2003-02-27 | 2004-09-10 | Tdk Corporation | 高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115010493A (zh) * | 2022-05-31 | 2022-09-06 | 清华大学 | 一种高熵焦绿石介电陶瓷材料及其制备方法与应用 |
CN115010493B (zh) * | 2022-05-31 | 2023-01-13 | 清华大学 | 一种高熵焦绿石介电陶瓷材料及其制备方法与应用 |
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