JP6885331B2 - 半導体装置およびその製造方法、並びに電子機器 - Google Patents
半導体装置およびその製造方法、並びに電子機器 Download PDFInfo
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- JP6885331B2 JP6885331B2 JP2017529550A JP2017529550A JP6885331B2 JP 6885331 B2 JP6885331 B2 JP 6885331B2 JP 2017529550 A JP2017529550 A JP 2017529550A JP 2017529550 A JP2017529550 A JP 2017529550A JP 6885331 B2 JP6885331 B2 JP 6885331B2
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- image sensor
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Description
1.イメージセンサパッケージの第1の実施の形態
2.イメージセンサパッケージの第2の実施の形態
3.イメージセンサパッケージの第3の実施の形態
4.イメージセンサパッケージの第4の実施の形態
5.イメージセンサパッケージの第5の実施の形態
6.イメージセンサパッケージの第6の実施の形態
7.イメージセンサパッケージの第7の実施の形態
8.イメージセンサパッケージの第8の実施の形態
9.マルチチップモジュール構成例
10.カメラモジュール構成例
11.複眼カメラモジュール構成例
12.電子機器への適用例
<1.1 第1の実施の形態の構造図>
図1は、本技術を適用した半導体装置の第1の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図3を参照して、第1の実施の形態のイメージセンサパッケージ1の製造方法(第1の製造方法)について説明する。
図4は、第1の実施の形態の第1変形例を示すイメージセンサパッケージ1の断面図である。
図5は、第1の実施の形態の第2変形例を示すイメージセンサパッケージ1の断面図である。
<2.1 第2の実施の形態の構造図>
図6は、本技術を適用した半導体装置の第2の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図7を参照して、第2の実施の形態のイメージセンサパッケージ1の製造方法(第2の製造方法)について説明する。
<3.1 第3の実施の形態の構造図>
図8は、本技術を適用した半導体装置の第3の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図9を参照して、第3の実施の形態のイメージセンサパッケージ1の製造方法(第3の製造方法)について説明する。
<4.1 第4の実施の形態の構造図>
図10は、本技術を適用した半導体装置の第4の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図12を参照して、第4の実施の形態のイメージセンサパッケージ1の製造方法(第4の製造方法)について説明する。
図13は、第4の実施の形態の第1変形例を示すイメージセンサパッケージ1の断面図である。
図14は、第4の実施の形態の第2変形例を示すイメージセンサパッケージ1の断面図である。
図16は、第4の実施の形態の第3変形例を示すイメージセンサパッケージ1の断面図である。
<5.1 第5の実施の形態の構造図>
図17は、本技術を適用した半導体装置の第5の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図18を参照して、第5の実施の形態のイメージセンサパッケージ1の製造方法(第5の製造方法)について説明する。
<6.1 第6の実施の形態の構造図>
図19は、本技術を適用した半導体装置の第6の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図20を参照して、第6の実施の形態のイメージセンサパッケージ1の製造方法(第6の製造方法)について説明する。
図20のFに示したガラス基板23の薄化の工程では、ガラス基板23が、イメージセンサ11ごとに分断されるまで薄化するようにしたが、完全に分断されるまで薄化しなくてもよい。
<7.1 第7の実施の形態の構造図>
図22は、本技術を適用した半導体装置の第7の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図23を参照して、第7の実施の形態のイメージセンサパッケージ1の製造方法(第7の製造方法)について説明する。
<8.1 第8の実施の形態の構造図>
図24は、本技術を適用した半導体装置の第8の実施の形態としての、イメージセンサパッケージの断面図を示している。
次に、図25を参照して、第8の実施の形態のイメージセンサパッケージ1の製造方法(第8の製造方法)について説明する。
図25のDに示したガラス基板23の薄化の工程では、ガラス基板23が、イメージセンサ11ごとに分断されるまで薄化するようにしたが、完全に分断されるまで薄化しなくてもよい。この場合、溝部91においても、所定の厚みでガラス基板23が残ることになり、図26に示されるような、ガラス基板23の端部において、板厚が、イメージセンサ11上方よりも薄く形成されたイメージセンサパッケージ1を製造することができる。
図27は、第8の実施の形態の第2変形例を示すイメージセンサパッケージ1の断面図である。
図28は、イメージセンサパッケージ1が、構成部品として、抵抗、キャパシタ、トランジスタ等のチップ部品をさらに含み、マルチチップモジュール構造としたイメージセンサパッケージの構成例を示している。
図29は、上述した各実施の形態のイメージセンサパッケージにレンズ構造体を組み立てたカメラモジュールの構成例を示している。
次に、複眼カメラモジュールの構成例について説明する。
図30は、複眼カメラモジュールの第1構成例を示している。
図31は、複眼カメラモジュールの第2構成例を示している。
図32は、複眼カメラモジュールの第3構成例を示している。
図33は、複眼カメラモジュールの第4構成例を示している。
図34は、複眼カメラモジュールの第5構成例を示している。
上述したイメージセンサパッケージ1、カメラモジュール151、または複眼カメラモジュール201は、デジタルスチルカメラやビデオカメラ等の撮像装置や、撮像機能を有する携帯端末装置や、画像読取部に固体撮像装置を用いる複写機など、画像取込部(光電変換部)に固体撮像装置を用いる電子機器に組み込んだ形で使用することが可能である。
図37は、イメージセンサパッケージ1、カメラモジュール151、または複眼カメラモジュール201として構成されたイメージセンサの使用例を示す図である。
・自動停止等の安全運転や、運転者の状態の認識等のために、自動車の前方や後方、周囲、車内等を撮影する車載用センサ、走行車両や道路を監視する監視カメラ、車両間等の測距を行う測距センサ等の、交通の用に供される装置
・ユーザのジェスチャを撮影して、そのジェスチャに従った機器操作を行うために、TVや、冷蔵庫、エアーコンディショナ等の家電に供される装置
・内視鏡や、赤外光の受光による血管撮影を行う装置等の、医療やヘルスケアの用に供される装置
・防犯用途の監視カメラや、人物認証用途のカメラ等の、セキュリティの用に供される装置
・肌を撮影する肌測定器や、頭皮を撮影するマイクロスコープ等の、美容の用に供される装置
・スポーツ用途等向けのアクションカメラやウェアラブルカメラ等の、スポーツの用に供される装置
・畑や作物の状態を監視するためのカメラ等の、農業の用に供される装置
(1)
半導体基板に光電変換素子が形成されたイメージセンサと、
前記イメージセンサの第1の主面側に配置されたガラス基板と、
前記イメージセンサの前記第1の主面と反対側の第2の主面側に形成された第1配線層と、
前記イメージセンサの信号を外部に出力する外部端子と
を備え、
前記第1配線層の金属配線は、前記イメージセンサの内部から外周部へ拡がるように形成されて前記外部端子と接続されている
半導体装置。
(2)
半導体基板に光電変換素子が形成されたイメージセンサと、
前記イメージセンサの受光面である第1の主面を保護するガラス基板と、
前記イメージセンサと前記ガラス基板の側面を覆う絶縁性部材と
を備える半導体装置。
(3)
前記第1配線層が形成されている平面領域は、前記イメージセンサの平面領域よりも大きい
前記(1)または(2)に記載の半導体装置。
(4)
前記ガラス基板と前記第1配線層との間であって、前記イメージセンサの側面は、絶縁性材料で覆われている
前記(1)乃至(3)のいずれかに記載の半導体装置。
(5)
前記絶縁性材料は、遮光性の材料と高熱伝導性を有する材料の2種類の絶縁性材料を含む
前記(4)に記載の半導体装置。
(6)
前記イメージセンサの第1の主面と前記ガラス基板との間に、第2配線層が挿入されている
前記(1)乃至(5)のいずれかに記載の半導体装置。
(7)
前記ガラス基板の側面は、絶縁性材料で覆われている
前記(1)乃至(6)のいずれかに記載の半導体装置。
(8)
前記イメージセンサの第1の主面と前記ガラス基板との間に、光透過性部材が封入されている
前記(1)乃至(7)のいずれかに記載の半導体装置。
(9)
前記イメージセンサの第1の主面と前記ガラス基板との間に、空気が封入されている
前記(1)乃至(8)のいずれかに記載の半導体装置。
(10)
前記イメージセンサの前記第2の主面と前記第1配線層との間に、1種類以上の絶縁性材料が挿入されている
前記(1)、(3)乃至(9)のいずれかに記載の半導体装置。
(11)
前記イメージセンサの前記第2の主面の電極部と、前記第1配線層とが、金属バンプを介して電気的に接続されている
前記(10)に記載の半導体装置。
(12)
前記イメージセンサの前記第2の主面の電極部と、前記第1配線層とが、ビアを介して電気的に接続されている
前記(10)に記載の半導体装置。
(13)
前記ガラス基板の外周部は、その内側よりも厚く形成されている
前記(1)、(3)乃至(12)のいずれかに記載の半導体装置。
(14)
複数のレンズが積層されたレンズ構造体をさらに備え、
前記複数のレンズで集光された光が前記イメージセンサに入射されるように構成されている
前記(1)、(3)乃至(13)のいずれかに記載の半導体装置。
(15)
前記イメージセンサの前記第1の主面と反対側の第2の主面も、前記絶縁性部材で覆われている
前記(2)に記載の半導体装置。
(16)
半導体基板に光電変換素子が形成されたイメージセンサの第1の主面側にガラス基板を配置し、
前記イメージセンサの前記第1の主面と反対側の第2の主面側に、前記イメージセンサの内部から外周部へ拡がる金属配線を含む配線層を形成し、
前記金属配線と接続する前記外部端子を形成する
半導体装置の製造方法。
(17)
半導体基板に光電変換素子が形成されたイメージセンサと、
前記イメージセンサの第1の主面側に配置されたガラス基板と、
前記イメージセンサの前記第1の主面と反対側の第2の主面側に形成された配線層と、
前記イメージセンサの信号を外部に出力する外部端子と
を備え、
前記配線層の金属配線は、前記イメージセンサの内部から外周部へ拡がるように形成されて前記外部端子と接続されている
半導体装置
を備える電子機器。
(18)
半導体基板に光電変換素子が形成されたイメージセンサと、
前記イメージセンサの受光面を保護するガラス基板と、
前記イメージセンサと前記ガラス基板の側面を覆う絶縁性部材と
を備える半導体装置
を備える電子機器。
Claims (17)
- 半導体基板に光電変換素子が形成されたイメージセンサと、
前記イメージセンサの第1の主面側に配置されたガラス基板と、
複数の金属配線層と、その間に形成された絶縁層とを含み、前記イメージセンサの前記第1の主面と反対側の第2の主面側に形成された第1配線層と、
複数の金属配線層と、その間に形成された絶縁層とを含み、前記イメージセンサの第1の主面と前記ガラス基板との間に挿入された第2配線層と、
前記イメージセンサの信号を外部に出力する外部端子と
を備え、
前記第1配線層の最下層の金属配線層は、前記イメージセンサの内部から外周部へ拡がるように形成されて前記外部端子と接続され、
前記第2配線層は、平面視で前記イメージセンサの受光部より外側に配置され、
前記第2配線層の少なくとも1つの金属配線層は、前記イメージセンサの前記第1の主面上の周縁部で前記イメージセンサと電気的に接続されている
半導体装置。 - 前記第1配線層が形成されている平面領域は、前記イメージセンサの平面領域よりも大きい
請求項1に記載の半導体装置。 - 前記ガラス基板と前記第1配線層との間であって、前記イメージセンサの側面は、絶縁性材料で覆われている
請求項1または2に記載の半導体装置。 - 前記絶縁性材料は、遮光性の材料と高熱伝導性を有する材料の2種類の絶縁性材料を含む
請求項3に記載の半導体装置。 - 前記第2配線層の少なくとも1つの金属配線層は、前記イメージセンサの第1の主面と、金属部材を介して電気的に接続されている
請求項1乃至4のいずれかに記載の半導体装置。 - 前記金属部材は、金属バンプである
請求項5に記載の半導体装置。 - 前記ガラス基板の側面は、絶縁性材料で覆われている
請求項1乃至6のいずれかに記載の半導体装置。 - 前記イメージセンサの受光部と前記ガラス基板との間に、光透過性部材が封入されている
請求項1乃至7のいずれかに記載の半導体装置。 - 前記イメージセンサの受光部と前記ガラス基板との間に、空気が封入されている
請求項1乃至7のいずれかに記載の半導体装置。 - 前記イメージセンサの前記第2の主面と前記第1配線層との間に、1種類以上の絶縁性材料が挿入されている
請求項1乃至8のいずれかに記載の半導体装置。 - 前記イメージセンサの前記第2の主面の電極部と、前記第1配線層の所定の前記金属配線層とが、金属バンプを介して電気的に接続されている
請求項10に記載の半導体装置。 - 前記イメージセンサの前記第2の主面の電極部と、前記第1配線層の所定の前記金属配線層とが、ビアを介して電気的に接続されている
請求項10に記載の半導体装置。 - 複数のレンズが積層されたレンズ構造体をさらに備え、
前記複数のレンズで集光された光が前記イメージセンサに入射されるように構成されている
請求項1乃至12のいずれかに記載の半導体装置。 - 前記第2配線層の側面は、絶縁性材料で覆われている
請求項1乃至13のいずれかに記載の半導体装置。 - 前記第2配線層の前記イメージセンサと接続された面と反対側の面は、前記ガラス基板と接続されている
請求項1に記載の半導体装置。 - 半導体基板に光電変換素子が形成されたイメージセンサの第1の主面側にガラス基板を配置し、
前記イメージセンサの前記第1の主面と反対側の第2の主面側に、複数の金属配線層と、その間に形成された絶縁層とを含む第1配線層を形成し、
前記イメージセンサの第1の主面と前記ガラス基板との間に、複数の金属配線層と、その間に形成された絶縁層とを含む第2配線層を形成し、
前記イメージセンサの信号を外部に出力する外部端子を形成し、
前記第2配線層は、平面視で前記イメージセンサの受光部より外側に配置され、
前記第2配線層の少なくとも1つの金属配線層は、前記イメージセンサの前記第1の主面上の周縁部で前記イメージセンサと電気的に接続され、
前記第1配線層の最下層の金属配線層は、前記イメージセンサの内部から外周部へ拡がるように形成されて前記外部端子と接続される
半導体装置の製造方法。 - 半導体基板に光電変換素子が形成されたイメージセンサと、
前記イメージセンサの第1の主面側に配置されたガラス基板と、
複数の金属配線層と、その間に形成された絶縁層とを含み、前記イメージセンサの前記第1の主面と反対側の第2の主面側に形成された第1配線層と、
複数の金属配線層と、その間に形成された絶縁層とを含み、前記イメージセンサの第1の主面と前記ガラス基板との間に挿入された第2配線層と、
前記イメージセンサの信号を外部に出力する外部端子と
を備え、
前記第1配線層の最下層の金属配線層は、前記イメージセンサの内部から外周部へ拡がるように形成されて前記外部端子と接続され、
前記第2配線層は、平面視で前記イメージセンサの受光部より外側に配置され、
前記第2配線層の少なくとも1つの金属配線層は、前記イメージセンサの前記第1の主面上の周縁部で前記イメージセンサと電気的に接続されている
半導体装置
を備える電子機器。
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