JP6871259B2 - 距離画像センサ - Google Patents
距離画像センサ Download PDFInfo
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- JP6871259B2 JP6871259B2 JP2018536944A JP2018536944A JP6871259B2 JP 6871259 B2 JP6871259 B2 JP 6871259B2 JP 2018536944 A JP2018536944 A JP 2018536944A JP 2018536944 A JP2018536944 A JP 2018536944A JP 6871259 B2 JP6871259 B2 JP 6871259B2
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- 238000012546 transfer Methods 0.000 claims description 210
- 239000000758 substrate Substances 0.000 claims description 137
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 216
- 230000035945 sensitivity Effects 0.000 description 35
- 230000004048 modification Effects 0.000 description 30
- 238000012986 modification Methods 0.000 description 30
- 230000003595 spectral effect Effects 0.000 description 30
- 238000010586 diagram Methods 0.000 description 23
- 238000001514 detection method Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 13
- 238000009825 accumulation Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
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- 239000000463 material Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
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- G—PHYSICS
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Optical Distance (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
駆動信号SP:
V(t)=1(ただし、0<t<(T/2)の場合)
V(t)=0(ただし、(T/2)<t<Tの場合)
V(t+T)=V(t)
第一転送信号S1:
V(t)=1(ただし、0<t<(T/2)の場合)
V(t)=0(ただし、(T/2)<t<Tの場合)
V(t+T)=V(t)
第二転送信号S2(=S1の反転):
V(t)=0(ただし、0<t<(T/2)の場合)
V(t)=1(ただし、(T/2)<t<Tの場合)
V(t+T)=V(t)
外気温度に応じて光速cが異なる場合には、外気温度が測定され、外気温度に基づいて光速cが補正されてもよい。この場合、補正された光速cに基づいて、距離演算が行われてもよい。演算回路に入力された信号と、実際の距離との関係が、予めメモリに記憶されていてもよい。この場合、ルックアップテーブル方式によって、距離演算が行われてもよい。センサ構造に応じて、演算方法が変更されてもよい。この場合、従来から知られている演算方法が用いられてもよい。
距離d=(c/2)×(TP×q2/(q1+q2)) ・・・ (1)
演算回路5は、フレーム周期TF毎に、第一半導体領域FD1及び第二半導体領域FD2に収集された信号電荷の電荷量q1,q2それぞれを読み出す。演算回路5は、読み出した電荷量q1,q2に基づいて対象物までの距離dを演算する。
Claims (6)
- 距離画像センサであって、
一次元状又は二次元状に配置された複数のユニットからなる撮像領域が設けられているシリコン基板を備えており、
前記ユニットそれぞれは、距離センサであり、
前記距離センサは、
互いに対向する第一主面と第二主面とを有すると共に、入射光に応じて電荷が発生する電荷発生領域と前記電荷発生領域からの電荷を収集する電荷収集領域と前記電荷発生領域からの不要電荷を収集する不要電荷収集領域とが前記第一主面側に設けられているシリコン基板と、
前記第一主面上において、前記電荷発生領域と前記電荷収集領域との間に配置されており、入力される信号に応じて、前記電荷発生領域から電荷を前記電荷収集領域に流入させる転送電極と、
前記第一主面上において、前記電荷発生領域と前記不要電荷収集領域との間に配置されており、入力される信号に応じて、前記電荷発生領域から不要電荷を前記不要電荷収集領域に流入させる不要電荷転送電極と、を備え、
前記転送電極は、環状を呈していると共に、前記第一主面に直交する方向から見て前記電荷収集領域を囲むように配置されており、
前記電荷発生領域は、環状を呈していると共に、前記第一主面に直交する方向から見て前記転送電極を囲むように配置されており、
前記不要電荷転送電極は、環状を呈していると共に、前記第一主面に直交する方向から見て前記電荷発生領域を囲むように配置されており、
前記不要電荷収集領域は、環状を呈していると共に、前記第一主面に直交する方向から見て前記不要電荷転送電極を囲むように配置されており、
前記第二主面における少なくとも前記電荷発生領域に対応する領域には、前記シリコン基板の厚み方向に対して傾斜した斜面を有する複数の凸部が形成されており、
前記凸部では、前記斜面として、前記シリコン基板の(111)面が露出し、
前記凸部の高さが、200nm以上である。 - 請求項1に記載の距離画像センサであって、
前記第二主面上に配置されており、前記入射光を透過させる酸化シリコン膜を更に備えている。 - 請求項1に記載の距離画像センサであって、
前記第二主面上に配置されており、前記入射光を透過させる酸化アルミニウム膜を更に備えている。 - 請求項1又は3に記載の距離画像センサであって、
前記シリコン基板は、
前記電荷発生領域と前記電荷収集領域とが設けられている第一基板領域と、
前記第一基板領域よりも不純物濃度が高く、かつ、前記第二主面側に設けられている第二基板領域と、を有し、
前記凸部の斜面が、前記第二基板領域の表面に含まれている。 - 請求項2に記載の距離画像センサであって、
前記シリコン基板は、
前記電荷発生領域と前記電荷収集領域とが設けられている第一基板領域と、
前記第一基板領域よりも不純物濃度が高く、かつ、前記第二主面側に設けられている第二基板領域と、を有し、
前記凸部の斜面が、前記第二基板領域の表面に含まれている。 - 請求項1、3、及び4のいずれか一項に記載の距離画像センサであって、
前記第二主面上に配置されており、前記入射光を透過させると共にホウ素を含む膜を更に備えている。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2016166683 | 2016-08-29 | ||
JP2016166683 | 2016-08-29 | ||
PCT/JP2017/020055 WO2018042785A1 (ja) | 2016-08-29 | 2017-05-30 | 距離センサ及び距離画像センサ |
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JPWO2018042785A1 JPWO2018042785A1 (ja) | 2019-06-24 |
JP6871259B2 true JP6871259B2 (ja) | 2021-05-12 |
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US (1) | US11215698B2 (ja) |
EP (1) | EP3506355B1 (ja) |
JP (1) | JP6871259B2 (ja) |
KR (1) | KR102342233B1 (ja) |
CN (1) | CN109690777B (ja) |
WO (1) | WO2018042785A1 (ja) |
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EP3671837B1 (en) * | 2018-12-21 | 2023-11-29 | ams Sensors Belgium BVBA | Pixel of a semiconductor image sensor and method of manufacturing a pixel |
TW202101746A (zh) * | 2019-02-01 | 2021-01-01 | 日商索尼半導體解決方案公司 | 受光元件、固體攝像裝置及測距裝置 |
CN113287204A (zh) * | 2019-02-21 | 2021-08-20 | 索尼半导体解决方案公司 | 雪崩光电二极管传感器和测距装置 |
JP2020161779A (ja) * | 2019-03-28 | 2020-10-01 | ソニーセミコンダクタソリューションズ株式会社 | 受光装置および測距モジュール |
WO2021256086A1 (ja) * | 2020-06-16 | 2021-12-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
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US11215698B2 (en) | 2022-01-04 |
KR102342233B1 (ko) | 2021-12-23 |
CN109690777A (zh) | 2019-04-26 |
JPWO2018042785A1 (ja) | 2019-06-24 |
EP3506355A1 (en) | 2019-07-03 |
CN109690777B (zh) | 2023-06-27 |
EP3506355A4 (en) | 2020-04-15 |
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WO2018042785A1 (ja) | 2018-03-08 |
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