JP6854960B1 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP6854960B1 JP6854960B1 JP2020190746A JP2020190746A JP6854960B1 JP 6854960 B1 JP6854960 B1 JP 6854960B1 JP 2020190746 A JP2020190746 A JP 2020190746A JP 2020190746 A JP2020190746 A JP 2020190746A JP 6854960 B1 JP6854960 B1 JP 6854960B1
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- 230000004888 barrier function Effects 0.000 claims abstract description 225
- 238000002161 passivation Methods 0.000 claims abstract description 158
- 239000000758 substrate Substances 0.000 claims abstract description 149
- 150000002500 ions Chemical class 0.000 claims abstract description 68
- 239000002019 doping agent Substances 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 424
- 239000000463 material Substances 0.000 claims description 67
- 239000002344 surface layer Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 16
- 230000000903 blocking effect Effects 0.000 description 27
- 239000000969 carrier Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 230000000694 effects Effects 0.000 description 18
- 229920005591 polysilicon Polymers 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000006798 recombination Effects 0.000 description 14
- 238000005215 recombination Methods 0.000 description 14
- 238000005452 bending Methods 0.000 description 13
- 230000032258 transport Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 7
- 238000005036 potential barrier Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- -1 silver-aluminum Chemical compound 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Abstract
Description
Claims (9)
- 基板と、
前記基板の上面に順次積層されたエミッタ、第1パッシベーション膜、反射防止膜及び第1電極と、
前記基板の下面に順次積層されたトンネル層、バリア層、フィールドパッシベーション層、第2パッシベーション膜及び第2電極とを備え、
前記バリア層は、前記フィールドパッシベーション層におけるドーパントイオンの前記基板への移動を遮断するために使用されるものであり、前記バリア層は、前記第2電極の投影と重なっている第1バリア層と、前記第2電極の投影からずれている第2バリア層とを含み、少なくとも前記第2バリア層は真性半導体であり、
前記基板の表面に垂直な方向において、前記第1バリア層の厚さは前記第2バリア層の厚さよりも小さく、前記第1バリア層の前記基板から離れた表面は、前記第2バリア層の前記基板から離れた表面と面一であることを特徴とする太陽電池。 - 前記基板の表面に垂直な方向において、前記バリア層の厚さは20nm以下であることを特徴とする請求項1に記載の太陽電池。
- 前記フィールドパッシベーション層の前記バリア層に向かう表面層の平均ドーピング濃度は、1E+19/cm3〜1E+21/cm3であり、前記第2バリア層の厚さは0.5nm〜20nmであることを特徴とする請求項1に記載の太陽電池。
- 前記フィールドパッシベーション層の前記バリア層から離れた表面の表面ドーピング濃度は、1E+20/cm3〜1E+22/cm3であり、前記基板の表面に垂直な方向において、前記フィールドパッシベーション層の厚さと前記第2バリア層の厚さとの比は5〜100であることを特徴とする請求項1に記載の太陽電池。
- 前記第1バリア層の材料の種類は前記フィールドパッシベーション層の材料の種類と異なっていることを特徴とする請求項1に記載の太陽電池。
- 前記バリア層の材料の種類は、金属酸化物、ケイ化物、塩、有機物又は金属の少なくとも1種を含むことを特徴とする請求項5に記載の太陽電池。
- 前記第1バリア層は真性半導体層であることを特徴とする請求項1に記載の太陽電池。
- 前記バリア層は多層構造であり、前記多層構造における複数の膜層は、前記基板の表面に垂直な方向に順次に積層され、異なる膜層の材料は異なっていることを特徴とする請求項1に記載の太陽電池。
- 基板と、
前記基板の上面に順次積層されたエミッタ、第1パッシベーション膜、反射防止膜及び第1電極と、
前記基板の下面に順次積層されたトンネル層、バリア層、フィールドパッシベーション層、第2パッシベーション膜及び第2電極とを備え、
前記バリア層は、前記フィールドパッシベーション層におけるドーパントイオンの前記基板への移動を遮断するために使用されるものであり、前記バリア層は、前記第2電極の投影と重なっている第1バリア層と、前記第2電極の投影からずれている第2バリア層とを含み、少なくとも前記第2バリア層は真性半導体であり、
前記基板の表面に垂直な方向において、前記第1バリア層の厚さは前記第2バリア層の厚さよりも小さく、前記第1バリア層の前記基板に向かう表面は、前記第2バリア層の前記基板に向かう表面と面一であることを特徴とする太陽電池。
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CN202011192543.X | 2020-10-30 | ||
CN202011192543.XA CN112289873B (zh) | 2020-10-30 | 2020-10-30 | 太阳能电池 |
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US (2) | US11114575B1 (ja) |
EP (3) | EP3993064B1 (ja) |
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Cited By (1)
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JP7170817B1 (ja) | 2021-09-10 | 2022-11-14 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
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CN111200001A (zh) * | 2020-01-10 | 2020-05-26 | 京东方科技集团股份有限公司 | 一种显示面板和显示装置 |
CN115274867B (zh) * | 2021-04-29 | 2024-01-30 | 浙江晶科能源有限公司 | 光伏电池与光伏组件 |
CN115274868B (zh) * | 2021-04-29 | 2023-07-21 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
CN115842062A (zh) * | 2022-11-30 | 2023-03-24 | 浙江晶科能源有限公司 | 一种太阳能电池及光伏组件 |
CN115692534B (zh) * | 2022-12-14 | 2023-03-28 | 浙江晶科能源有限公司 | 一种太阳能电池及光伏组件 |
CN115881835B (zh) | 2023-02-08 | 2024-05-14 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
CN116581174A (zh) * | 2023-02-22 | 2023-08-11 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
CN116632093A (zh) | 2023-04-21 | 2023-08-22 | 晶科能源(海宁)有限公司 | 太阳能电池及其制备方法、光伏组件 |
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JP2015233142A (ja) * | 2014-06-10 | 2015-12-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
JP2016092425A (ja) * | 2014-11-04 | 2016-05-23 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
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WO2019021545A1 (ja) * | 2017-07-28 | 2019-01-31 | 三菱電機株式会社 | 太陽電池、及び、その製造方法 |
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