JP6848045B2 - 一体化パージガス予熱器を有する光学部品用オーブン筐体 - Google Patents
一体化パージガス予熱器を有する光学部品用オーブン筐体 Download PDFInfo
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- JP6848045B2 JP6848045B2 JP2019506176A JP2019506176A JP6848045B2 JP 6848045 B2 JP6848045 B2 JP 6848045B2 JP 2019506176 A JP2019506176 A JP 2019506176A JP 2019506176 A JP2019506176 A JP 2019506176A JP 6848045 B2 JP6848045 B2 JP 6848045B2
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- 238000010926 purge Methods 0.000 title claims description 92
- 239000007789 gas Substances 0.000 claims description 157
- 239000013078 crystal Substances 0.000 claims description 54
- 230000003287 optical effect Effects 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- -1 moisture Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003570 air Substances 0.000 claims description 2
- 239000012855 volatile organic compound Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 15
- 238000007689 inspection Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- VCZFPTGOQQOZGI-UHFFFAOYSA-N lithium bis(oxoboranyloxy)borinate Chemical compound [Li+].[O-]B(OB=O)OB=O VCZFPTGOQQOZGI-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WBPWDGRYHFQTRC-UHFFFAOYSA-N 2-ethoxycyclohexan-1-one Chemical compound CCOC1CCCCC1=O WBPWDGRYHFQTRC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 239000002957 persistent organic pollutant Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- NNAZVIPNYDXXPF-UHFFFAOYSA-N [Li+].[Cs+].OB([O-])[O-] Chemical compound [Li+].[Cs+].OB([O-])[O-] NNAZVIPNYDXXPF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
- F27D21/02—Observation or illuminating devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8477—Investigating crystals, e.g. liquid crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Supplying Secondary Fuel Or The Like To Fuel, Air Or Fuel-Air Mixtures (AREA)
- Polyesters Or Polycarbonates (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Description
本出願は、2016年8月4日に出願された仮特許出願、及び譲渡された米国特許出願第62/371,046号への優先権を主張し、その開示内容は、参照より本明細書に組み込まれる。
Claims (13)
- オーブン筐体であって、
オーブンチャンバを画定する複数の壁と、
前記壁内に配設されたカートリッジであって、
カートリッジブロックと、
前記カートリッジブロックの第1の表面上に配設された取付け台であって、光学部品を保持するように構成されている、取付け台と、
前記カートリッジブロック上に配設されたガス経路であって、前記カートリッジブロックの表面の周りに巻き付けられた管を含む、ガス経路と、
前記カートリッジブロック上に配設された加熱器と、を含む、カートリッジと、
前記壁のうちの1つ内に配設されたパージガス入口であって、前記ガス経路と流体連通するように構成されている、パージガス入口と、
前記壁内に配設された2つの窓であって、レーザービームが前記窓のうちの1つを通って入り、前記光学部品を通過し、前記窓のうちの別の1つを通って出るように配置されている、2つの窓と、
前記壁のうちの1つ内に配設されたパージガス出口であって、前記オーブンチャンバと流体連通するように構成されている、パージガス出口と、を備えるオーブン筐体。 - 前記管は、金属から製作されている、請求項1に記載のオーブン筐体。
- 前記取付け台上に配設された光学部品を更に備え、前記光学部品は、非線形光学結晶である、請求項1に記載のオーブン筐体。
- 前記取付け台は、ばね式である、請求項1に記載のオーブン筐体。
- 前記取付け台は、前記光学部品の重量の10〜100倍のばね力を有する、請求項4に記載のオーブン筐体。
- パージガス源を更に備え、前記パージガス源は、空気、窒素、又はアルゴンのうちの少なくとも1つを含有する、請求項1に記載のオーブン筐体。
- 前記パージガス入口と流体連通して配設されたフィルタを更に備え、前記フィルタは、揮発性有機化合物、湿気、又は粒子のうちの少なくとも1つを除去するように構成されている、請求項1に記載のオーブン筐体。
- 前記カートリッジと前記壁のうちの1つとの間に配設されたシールを更に備える、請求項1に記載のオーブン筐体。
- 前記ガス経路は、前記カートリッジブロックの周りに渦巻状パターンを有する、請求項1に記載のオーブン筐体。
- 前記加熱器は、前記カートリッジブロック内部に少なくとも部分的に配設されている、請求項1に記載のオーブン筐体。
- 前記窓は、1つ又は複数の波長を有する光に対する反射防止コーティングを含む、請求項1に記載のオーブン筐体。
- 前記窓は、前記レーザービームのビーム伝播方向に対してブルースターの角度で傾いているように構成され、それによって偏光されたレーザー放射の反射を最小化する、請求項1に記載のオーブン筐体。
- 方法であって、
オーブン筐体を提供することと、
前記オーブン筐体内にカートリッジを配設することであって、前記カートリッジが、
カートリッジブロックと、
前記カートリッジブロックの第1の表面上に配設された取付け台であって、光学部品を保持するように構成されている、取付け台と、
前記カートリッジブロック上に配設されたガス経路であって、前記カートリッジブロックの表面の周りに巻き付けられた管を含む、ガス経路と、
前記カートリッジブロック上に配設された加熱器と、を含むことと、
前記加熱器を作動させることと、
前記ガス経路を通して前記オーブン筐体の中にパージガスを流すことであって、前記加熱器が、前記パージガスが前記ガス経路を通って流れるにつれて、前記パージガスの温度を増大させるように構成されている、ことと、
レーザービームを前記オーブン筐体を通るように方向付けることと、を備える方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662371046P | 2016-08-04 | 2016-08-04 | |
US62/371,046 | 2016-08-04 | ||
US15/358,507 US10153215B2 (en) | 2016-08-04 | 2016-11-22 | Oven enclosure for optical components with integrated purge gas pre-heater |
US15/358,507 | 2016-11-22 | ||
PCT/US2017/044968 WO2018026856A1 (en) | 2016-08-04 | 2017-08-01 | Oven enclosure for optical components with integrated purge gas pre-heater |
Publications (3)
Publication Number | Publication Date |
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JP2019526078A JP2019526078A (ja) | 2019-09-12 |
JP2019526078A5 JP2019526078A5 (ja) | 2020-09-10 |
JP6848045B2 true JP6848045B2 (ja) | 2021-03-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2019506176A Active JP6848045B2 (ja) | 2016-08-04 | 2017-08-01 | 一体化パージガス予熱器を有する光学部品用オーブン筐体 |
Country Status (7)
Country | Link |
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US (1) | US10153215B2 (ja) |
JP (1) | JP6848045B2 (ja) |
KR (1) | KR102272969B1 (ja) |
CN (1) | CN109643679B (ja) |
SG (1) | SG11201900909XA (ja) |
TW (1) | TWI730153B (ja) |
WO (1) | WO2018026856A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US10153215B2 (en) * | 2016-08-04 | 2018-12-11 | Kla-Tencor Corporation | Oven enclosure for optical components with integrated purge gas pre-heater |
WO2024019727A1 (en) * | 2022-07-21 | 2024-01-25 | Ipg Photonics Corporation | Ovens for nonlinear optical crystals and method of use |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858056A (en) * | 1974-01-22 | 1974-12-31 | Westinghouse Electric Corp | Means and method for stabilized optimized temperature phase matched optical parametric generation |
US4686685A (en) | 1985-06-06 | 1987-08-11 | Laser Corporation Of America | Gas laser having thermally stable optical mount |
US4914276A (en) * | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
US4968121A (en) | 1988-12-07 | 1990-11-06 | Hughes Aircraft Company | Hermetically sealed apparatus and method for maintaining crystals at a controlled operating temperature |
US5935467A (en) * | 1997-05-14 | 1999-08-10 | General Electric Company | Oven for heating a crystal for a laser frequency conversion |
US5948300A (en) | 1997-09-12 | 1999-09-07 | Kokusai Bti Corporation | Process tube with in-situ gas preheating |
US6198075B1 (en) * | 1998-11-25 | 2001-03-06 | Yield Engineering Systems, Inc. | Rapid heating and cooling vacuum oven |
WO2000074183A1 (fr) | 1999-06-01 | 2000-12-07 | Komatsu Ltd. | Dispositif laser ultraviolet |
JP3508611B2 (ja) * | 1999-03-30 | 2004-03-22 | ウシオ電機株式会社 | 結晶保持装置 |
US6644324B1 (en) | 2000-03-06 | 2003-11-11 | Cymer, Inc. | Laser discharge chamber passivation by plasma |
JP3389197B2 (ja) * | 2000-04-19 | 2003-03-24 | 三菱重工業株式会社 | レーザ波長変換装置 |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7253032B2 (en) | 2001-04-20 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of flattening a crystallized semiconductor film surface by using a plate |
US6664511B2 (en) | 2001-07-09 | 2003-12-16 | Jds Uniphase Corporation | Package for optical components |
JP4081280B2 (ja) * | 2002-02-25 | 2008-04-23 | ギガフォトン株式会社 | レーザ装置 |
US7138640B1 (en) | 2002-10-17 | 2006-11-21 | Kla-Tencor Technologies, Corporation | Method and apparatus for protecting surfaces of optical components |
US7420681B1 (en) | 2006-07-14 | 2008-09-02 | Kla Tencor Technologies Corporation | Gas purge system and methods |
US8298335B2 (en) | 2007-12-18 | 2012-10-30 | Kla-Tencor Technologies Corporation | Enclosure for controlling the environment of optical crystals |
JP5537282B2 (ja) * | 2009-09-28 | 2014-07-02 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置および欠陥検査方法 |
US8711470B2 (en) * | 2010-11-14 | 2014-04-29 | Kla-Tencor Corporation | High damage threshold frequency conversion system |
FR2974251B1 (fr) * | 2011-04-18 | 2013-11-01 | Ecole Polytech | Dispositif pour la gestion thermique d'un élément optique et procédé de gestion thermique associe. |
US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
US9250178B2 (en) | 2011-10-07 | 2016-02-02 | Kla-Tencor Corporation | Passivation of nonlinear optical crystals |
US10047457B2 (en) | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
WO2015125635A2 (ja) * | 2014-02-19 | 2015-08-27 | スペクトロニクス株式会社 | 波長変換装置 |
CN203900744U (zh) | 2014-06-20 | 2014-10-29 | 上海和辉光电有限公司 | 一种激光退火设备 |
CN104389020B (zh) * | 2014-11-26 | 2017-04-05 | 山东萨菲尔晶体科技股份有限公司 | 焰熔法快速生长刚玉系蓝宝石晶体材料的工艺及设备 |
US10153215B2 (en) * | 2016-08-04 | 2018-12-11 | Kla-Tencor Corporation | Oven enclosure for optical components with integrated purge gas pre-heater |
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2016
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Also Published As
Publication number | Publication date |
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US10153215B2 (en) | 2018-12-11 |
US20180040518A1 (en) | 2018-02-08 |
TWI730153B (zh) | 2021-06-11 |
WO2018026856A1 (en) | 2018-02-08 |
JP2019526078A (ja) | 2019-09-12 |
KR20190026941A (ko) | 2019-03-13 |
TW201805075A (zh) | 2018-02-16 |
KR102272969B1 (ko) | 2021-07-02 |
CN109643679A (zh) | 2019-04-16 |
CN109643679B (zh) | 2020-05-26 |
SG11201900909XA (en) | 2019-02-27 |
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