JP6847933B2 - 磁気抵抗素子における混合を用いる磁場センサ及び方法 - Google Patents

磁気抵抗素子における混合を用いる磁場センサ及び方法 Download PDF

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JP6847933B2
JP6847933B2 JP2018516836A JP2018516836A JP6847933B2 JP 6847933 B2 JP6847933 B2 JP 6847933B2 JP 2018516836 A JP2018516836 A JP 2018516836A JP 2018516836 A JP2018516836 A JP 2018516836A JP 6847933 B2 JP6847933 B2 JP 6847933B2
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magnetic field
magnetoresistive element
current
mixed
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JP2018531383A6 (ja
JP2018531383A5 (enExample
JP2018531383A (ja
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モンレアル,ヘラルド・アー
フリードリッヒ,アンドレアス・ペー
フェルモン,クロード
パネティア−ルクール,ミリアン
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アレグロ・マイクロシステムズ・エルエルシー
コミサリア タ レネルジー アトミック エ オー エネルジー アルテルナティーヴ
コミサリア タ レネルジー アトミック エ オー エネルジー アルテルナティーヴ
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/0023Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
JP2018516836A 2015-09-30 2016-09-21 磁気抵抗素子における混合を用いる磁場センサ及び方法 Active JP6847933B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/870,834 US10078117B2 (en) 2015-09-30 2015-09-30 Magnetic field sensors and methods using mixing in a magnetoresistance element
US14/870,834 2015-09-30
PCT/US2016/052745 WO2017058586A1 (en) 2015-09-30 2016-09-21 Magnetic field sensors and methods using mixing in a magnetoresistance element

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JP2018531383A JP2018531383A (ja) 2018-10-25
JP2018531383A6 JP2018531383A6 (ja) 2018-12-13
JP2018531383A5 JP2018531383A5 (enExample) 2019-07-25
JP6847933B2 true JP6847933B2 (ja) 2021-03-24

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US (1) US10078117B2 (enExample)
EP (1) EP3347729B1 (enExample)
JP (1) JP6847933B2 (enExample)
KR (1) KR20180059835A (enExample)
WO (1) WO2017058586A1 (enExample)

Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
CN106597326B (zh) * 2015-10-16 2020-01-07 爱盛科技股份有限公司 磁场感测装置
US10591320B2 (en) * 2017-12-11 2020-03-17 Nxp B.V. Magnetoresistive sensor with stray field cancellation and systems incorporating same
US11630168B2 (en) 2021-02-03 2023-04-18 Allegro Microsystems, Llc Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
US11609283B2 (en) * 2021-03-23 2023-03-21 Allegro Microsystems, Llc Electrical offset compensating in a magnetoresistance bridge
US11953565B2 (en) 2021-03-23 2024-04-09 Allegro Microsystems, Llc Electrical offset compensating in a bridge using more than four magnetoresistance elements

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1055998A (ja) * 1996-08-12 1998-02-24 Daido Hoxan Inc シリコンウェーハの加工方法
JP2000055998A (ja) 1998-08-05 2000-02-25 Tdk Corp 磁気センサ装置および電流センサ装置
EP1991862B1 (en) 2006-02-24 2013-07-10 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Method and device for non destructive evaluation of defects in a metallic object
JP2008076286A (ja) * 2006-09-22 2008-04-03 Fujikura Ltd 磁気デバイス
JP4991322B2 (ja) * 2006-10-30 2012-08-01 日立オートモティブシステムズ株式会社 Gmr素子を用いた変位センサ,gmr素子を用いた角度検出センサ及びそれらに用いる半導体装置
JP2010266247A (ja) * 2009-05-12 2010-11-25 Nagoya Univ 磁気センサ及び磁界測定装置
JP5793682B2 (ja) * 2011-01-21 2015-10-14 パナソニックIpマネジメント株式会社 電力計測装置
US8922206B2 (en) * 2011-09-07 2014-12-30 Allegro Microsystems, Llc Magnetic field sensing element combining a circular vertical hall magnetic field sensing element with a planar hall element
CZ2013822A3 (cs) 2013-10-25 2015-02-04 České Vysoké Učení Technické V Praze Univerzitní Centrum Energeticky Efektivních Budov Bezkontaktní magnetický senzor polohy magnetických nebo elektricky vodivých objektů

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WO2017058586A1 (en) 2017-04-06
US10078117B2 (en) 2018-09-18
US20170089987A1 (en) 2017-03-30
EP3347729A1 (en) 2018-07-18
JP2018531383A (ja) 2018-10-25
KR20180059835A (ko) 2018-06-05
EP3347729B1 (en) 2020-01-15

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