JP2018531383A5 - - Google Patents

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Publication number
JP2018531383A5
JP2018531383A5 JP2018516836A JP2018516836A JP2018531383A5 JP 2018531383 A5 JP2018531383 A5 JP 2018531383A5 JP 2018516836 A JP2018516836 A JP 2018516836A JP 2018516836 A JP2018516836 A JP 2018516836A JP 2018531383 A5 JP2018531383 A5 JP 2018531383A5
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JP
Japan
Prior art keywords
magnetic field
node
mixed
current
magnetoresistive element
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JP2018516836A
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English (en)
Japanese (ja)
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JP2018531383A6 (ja
JP2018531383A (ja
JP6847933B2 (ja
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Priority claimed from US14/870,834 external-priority patent/US10078117B2/en
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Publication of JP2018531383A5 publication Critical patent/JP2018531383A5/ja
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JP2018516836A 2015-09-30 2016-09-21 磁気抵抗素子における混合を用いる磁場センサ及び方法 Active JP6847933B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/870,834 US10078117B2 (en) 2015-09-30 2015-09-30 Magnetic field sensors and methods using mixing in a magnetoresistance element
US14/870,834 2015-09-30
PCT/US2016/052745 WO2017058586A1 (en) 2015-09-30 2016-09-21 Magnetic field sensors and methods using mixing in a magnetoresistance element

Publications (4)

Publication Number Publication Date
JP2018531383A JP2018531383A (ja) 2018-10-25
JP2018531383A6 JP2018531383A6 (ja) 2018-12-13
JP2018531383A5 true JP2018531383A5 (enExample) 2019-07-25
JP6847933B2 JP6847933B2 (ja) 2021-03-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018516836A Active JP6847933B2 (ja) 2015-09-30 2016-09-21 磁気抵抗素子における混合を用いる磁場センサ及び方法

Country Status (5)

Country Link
US (1) US10078117B2 (enExample)
EP (1) EP3347729B1 (enExample)
JP (1) JP6847933B2 (enExample)
KR (1) KR20180059835A (enExample)
WO (1) WO2017058586A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106597326B (zh) * 2015-10-16 2020-01-07 爱盛科技股份有限公司 磁场感测装置
US10591320B2 (en) * 2017-12-11 2020-03-17 Nxp B.V. Magnetoresistive sensor with stray field cancellation and systems incorporating same
US11630168B2 (en) 2021-02-03 2023-04-18 Allegro Microsystems, Llc Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
US11609283B2 (en) * 2021-03-23 2023-03-21 Allegro Microsystems, Llc Electrical offset compensating in a magnetoresistance bridge
US11953565B2 (en) 2021-03-23 2024-04-09 Allegro Microsystems, Llc Electrical offset compensating in a bridge using more than four magnetoresistance elements

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1055998A (ja) * 1996-08-12 1998-02-24 Daido Hoxan Inc シリコンウェーハの加工方法
JP2000055998A (ja) 1998-08-05 2000-02-25 Tdk Corp 磁気センサ装置および電流センサ装置
EP1991862B1 (en) 2006-02-24 2013-07-10 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Method and device for non destructive evaluation of defects in a metallic object
JP2008076286A (ja) * 2006-09-22 2008-04-03 Fujikura Ltd 磁気デバイス
JP4991322B2 (ja) * 2006-10-30 2012-08-01 日立オートモティブシステムズ株式会社 Ｇｍｒ素子を用いた変位センサ，ｇｍｒ素子を用いた角度検出センサ及びそれらに用いる半導体装置
JP2010266247A (ja) * 2009-05-12 2010-11-25 Nagoya Univ 磁気センサ及び磁界測定装置
JP5793682B2 (ja) * 2011-01-21 2015-10-14 パナソニックＩｐマネジメント株式会社 電力計測装置
US8922206B2 (en) * 2011-09-07 2014-12-30 Allegro Microsystems, Llc Magnetic field sensing element combining a circular vertical hall magnetic field sensing element with a planar hall element
CZ2013822A3 (cs) 2013-10-25 2015-02-04 České Vysoké Učení Technické V Praze Univerzitní Centrum Energeticky Efektivních Budov Bezkontaktní magnetický senzor polohy magnetických nebo elektricky vodivých objektů

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