JP6845627B2 - ボールグリッドアレイパッケージの積層を含む3次元電子モジュール - Google Patents
ボールグリッドアレイパッケージの積層を含む3次元電子モジュール Download PDFInfo
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- JP6845627B2 JP6845627B2 JP2016125327A JP2016125327A JP6845627B2 JP 6845627 B2 JP6845627 B2 JP 6845627B2 JP 2016125327 A JP2016125327 A JP 2016125327A JP 2016125327 A JP2016125327 A JP 2016125327A JP 6845627 B2 JP6845627 B2 JP 6845627B2
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- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 238000005452 bending Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Description
チップパッドの間隔:50〜100μm、
チップをカプセル化するボールグリッドアレイパッケージの間隔:400〜800μmである。
− 2個の電気的に試験済の電子パッケージ、すなわち各々が当該パッケージの2個の側面を接合する、主面と称する1個の面上に少なくとも1個のカプセル化チップおよび出力ボールを含む2個の電気的に試験済の電子パッケージと、
− 互いに機械的に接続され、且つ当該2個のパッケージの間に配置された2個の柔軟回路、すなわち各々が1個のパッケージに関連付けられ、且つ
・1個の面上に、当該関連付けられたパッケージのボールと接触する第1の電気的相互接続パッド、
・自身の終端に、当該関連付けられたパッケージの側面に重ねて折り畳まれた部分、
・当該折り畳まれた部分の反対側の面上に第2の電気的相互接続パッドを含む2個の柔軟回路とを含む3次元電子モジュールである。
− 6mm≦Lb≦9mm、
− 6mm≦Ib≦14mm、
− 0.8mm≦eb≦1.4mm
Lf≧Lb+ebおよびIf=Ib
− 7mm≦Lf≦11mm、
− 6mm≦If≦14mm、
− 0.8mm≦eb≦1.4mm
Lf1=Lb且つLf2≧ebである。
− パッケージの出力ボール13およびフレックス回路の主部分27の第1の相互接続パッド22(折り畳まれない)を機械的および電気的に接触させ(例えば従来の有鉛または無鉛ハンダを用いるハンダ付けにより)、従ってフレックス回路の部分26が主部分27から突出する、
− 第2の相互接続パッド24がパッケージの前記側面16と同じ高さになるよう当該フレックス回路を90°折り曲げることにより、パッケージの側面16を当該フレックス回路の(突出)部分26と機械的に接触させる。
− パッケージの側面16に重ねて折り畳まれ(図の最下部)、外部接続部(ボール25)を支持するフレックス。
− パッケージの側面16に重ねて折り畳まれたフレックス、当該側面は先行する面の反対側(図の最上部)にあり、それらの面23に能動および/または受動素子60(コンデンサ、抵抗等)および/または「バッファ」型能動回路が載置されていることで「コア」回路50が不要となる。
− モジュールの側面上にルーティングが無い、
− レベル間相互接続用のポリマー貫通孔(TPV)または金型貫通孔(TMV)が無い、
− ジグを用いて接着された構造によるボールの共平面性、
− 本質的に、積層されるパッケージの数に制限が無い、
− ユーザの相互接続PCBにおける容量性分離を、
・鋳造無し、
・モジュール面を金属化無し、
・レーザーエッチング無しに一体化可能であること。
11 チップ
12 エポキシ樹脂
13 出力ボール
14 外面
15 主面
16 側面
17 充填樹脂
20 フレックス回路
21 主面
22、24 相互接続パッド
23 反対側の面
25 ボール
26、27 フレックス回路の部分
30 接着剤
40 ラジエータ
41 熱接続
50 「コア」回路
51 層
60 能動/受動素子
70 ビード
100 3次元モジュール
150 貫通孔
151 樹脂
1000 積層
1001 エポキシ樹脂
Claims (9)
- − 2個の電気的に試験済の電子パッケージ(10)であって、各々が前記パッケージの2個の側面(16)を接合する、主面(15)と称する1個の面上に少なくとも1個のカプセル化チップ(11)および出力ボール(13)を含む2個の電気的に試験済の電子パッケージ(10)と、
− 互いに機械的に接続され、且つ前記2個のパッケージの間に配置された2個の柔軟回路(20)であって、各々が1個のパッケージ(10)に関連付けられ、且つ
・1個の面(21)上に、前記関連付けられたパッケージの前記出力ボール(13)と接触する第1の電気的相互接続パッド(22)、
・自身の終端に、前記関連付けられたパッケージの側面(16)に重ねて折り畳まれた部分(26)、
・前記折り畳まれた部分(26)の反対側の面上に第2の電気的相互接続パッド(24)を含む2個の柔軟回路(20)とを含む3次元電子モジュール(100)。 - 前記2個の柔軟回路(20)が、前記2個の柔軟回路の間に配置された硬質印刷回路基板(50)により、機械的および電気的に相互接続されていることを特徴とする、請求項1に記載の3次元電子モジュール。
- 前記硬質印刷回路基板(50)が、受動および/または能動素子(60)を含むことを特徴とする、請求項2に記載の3次元電子モジュール。
- 前記柔軟回路の折り目に沿って前記2個の柔軟回路(20)の間の境界に配置されたエポキシ樹脂のビード(70)を含むことを特徴とする、請求項1〜3のいずれか1項に記載の3次元電子モジュール。
- 少なくとも1個のパッケージ(10)が、前記チップ(11)の面が視認可能になるまで薄化され、且つ前記チップの前記面上に配置されたラジエータ(40)を含むことを特徴とする、請求項1〜4のいずれか1項に記載の3次元電子モジュール。
- 少なくとも1個の柔軟回路(20)が自身の他方の終端に、前記2個の側面(16)のうちの第1の側面の反対側のパッケージの側面(16)に重ねて折り畳まれ、前記柔軟回路が前記他方の終端に受動および/または能動素子(60)を含むことを特徴とする、請求項1〜5のいずれか1項に記載の3次元電子モジュール。
- 1GHzよりも高い周波数で動作する受動および/または能動素子(60)を含むことを特徴とする、請求項1〜6のいずれか1項に記載の3次元電子モジュール。
- 請求項1〜7のいずれか1項に記載の複数の3次元電子モジュールの積層(100)を含み、前記モジュールが主面(15)とは反対側の面(14)により互いに接着されていることを特徴とする、3次元電子積層(1000)。
- 相互接続印刷回路基板および請求項1〜7のいずれか1項に記載の3次元電子モジュール(100)または請求項8に記載の積層(1000)を含み、相互接続印刷回路基板に載置され、且つ前記柔軟回路の前記第2の電気的相互接続パッド(24)と接触させる相互接続ボール(25)を介して相互接続回路に電気的に接続されている3次元電子装置。
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FR1555857A FR3038130B1 (fr) | 2015-06-25 | 2015-06-25 | Module electronique 3d comportant un empilement de boitiers a billes |
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JPH08116022A (ja) * | 1994-08-22 | 1996-05-07 | Fujitsu Ltd | 半導体装置及び半導体装置ユニット |
JPH05198708A (ja) * | 1992-01-23 | 1993-08-06 | Hitachi Ltd | 半導体集積回路装置 |
US5224023A (en) * | 1992-02-10 | 1993-06-29 | Smith Gary W | Foldable electronic assembly module |
JPH08279586A (ja) * | 1995-04-07 | 1996-10-22 | Fujitsu Ltd | 半導体装置及び半導体装置ユニット |
US6590282B1 (en) * | 2002-04-12 | 2003-07-08 | Industrial Technology Research Institute | Stacked semiconductor package formed on a substrate and method for fabrication |
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US20070211711A1 (en) * | 2006-03-08 | 2007-09-13 | Clayton James E | Thin multichip flex-module |
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US20090166065A1 (en) * | 2008-01-02 | 2009-07-02 | Clayton James E | Thin multi-chip flex module |
US8278141B2 (en) * | 2008-06-11 | 2012-10-02 | Stats Chippac Ltd. | Integrated circuit package system with internal stacking module |
JP2011035345A (ja) * | 2009-08-06 | 2011-02-17 | Fujitsu Ltd | 半導体素子モジュール、電子回路ユニット、電子デバイス、及び、半導体素子モジュールの製造方法 |
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FR3038130B1 (fr) | 2017-08-11 |
FR3038130A1 (fr) | 2016-12-30 |
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