JP6829192B2 - 研磨方法 - Google Patents

研磨方法 Download PDF

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Publication number
JP6829192B2
JP6829192B2 JP2017517905A JP2017517905A JP6829192B2 JP 6829192 B2 JP6829192 B2 JP 6829192B2 JP 2017517905 A JP2017517905 A JP 2017517905A JP 2017517905 A JP2017517905 A JP 2017517905A JP 6829192 B2 JP6829192 B2 JP 6829192B2
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JP
Japan
Prior art keywords
polishing
polishing composition
polished
composition
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2017517905A
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English (en)
Japanese (ja)
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JPWO2016181889A1 (ja
Inventor
博之 織田
博之 織田
修平 ▲高▼橋
修平 ▲高▼橋
森 嘉男
嘉男 森
高見 信一郎
信一郎 高見
誠 田畑
誠 田畑
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Fujimi Inc
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Fujimi Inc
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Publication date
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Publication of JPWO2016181889A1 publication Critical patent/JPWO2016181889A1/ja
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Publication of JP6829192B2 publication Critical patent/JP6829192B2/ja
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2017517905A 2015-05-08 2016-05-02 研磨方法 Active JP6829192B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015095660 2015-05-08
JP2015095660 2015-05-08
PCT/JP2016/063598 WO2016181889A1 (ja) 2015-05-08 2016-05-02 研磨用組成物

Publications (2)

Publication Number Publication Date
JPWO2016181889A1 JPWO2016181889A1 (ja) 2018-02-22
JP6829192B2 true JP6829192B2 (ja) 2021-02-10

Family

ID=57248129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017517905A Active JP6829192B2 (ja) 2015-05-08 2016-05-02 研磨方法

Country Status (3)

Country Link
JP (1) JP6829192B2 (zh)
TW (1) TW201706373A (zh)
WO (1) WO2016181889A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7104053B2 (ja) * 2017-09-07 2022-07-20 株式会社フジミインコーポレーテッド 研磨用組成物およびシリコン基板研磨方法
JP7267795B2 (ja) * 2019-03-22 2023-05-02 株式会社フジミインコーポレーテッド 単体シリコンの研磨速度向上剤

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP4396963B2 (ja) * 2003-05-06 2010-01-13 信越半導体株式会社 研磨用組成物、その調製方法及びそれを用いたウェーハの研磨方法
KR100558259B1 (ko) * 2003-11-25 2006-03-10 제일모직주식회사 실리콘 웨이퍼 경면연마용 슬러리 조성물
KR100636994B1 (ko) * 2004-08-27 2006-10-20 제일모직주식회사 표면이하 결함을 개선하는 실리콘 웨이퍼 경면연마용슬러리 조성물
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
WO2010122985A1 (ja) * 2009-04-20 2010-10-28 日立化成工業株式会社 半導体基板用研磨液及び半導体基板の研磨方法

Also Published As

Publication number Publication date
WO2016181889A1 (ja) 2016-11-17
JPWO2016181889A1 (ja) 2018-02-22
TW201706373A (zh) 2017-02-16

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