JP6828510B2 - 樹脂組成物 - Google Patents
樹脂組成物 Download PDFInfo
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- JP6828510B2 JP6828510B2 JP2017035468A JP2017035468A JP6828510B2 JP 6828510 B2 JP6828510 B2 JP 6828510B2 JP 2017035468 A JP2017035468 A JP 2017035468A JP 2017035468 A JP2017035468 A JP 2017035468A JP 6828510 B2 JP6828510 B2 JP 6828510B2
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- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- YNTQTLGBCMXNFX-UHFFFAOYSA-N [5-ethyl-2-(2-methyl-1-prop-2-enoyloxypropan-2-yl)-1,3-dioxan-5-yl]methyl prop-2-enoate Chemical compound C=CC(=O)OCC1(CC)COC(C(C)(C)COC(=O)C=C)OC1 YNTQTLGBCMXNFX-UHFFFAOYSA-N 0.000 description 1
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- 230000002378 acidificating effect Effects 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
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- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- RRZKHZBOZDIQJG-UHFFFAOYSA-N azane;manganese Chemical compound N.[Mn] RRZKHZBOZDIQJG-UHFFFAOYSA-N 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- UIJGNTRUPZPVNG-UHFFFAOYSA-N benzenecarbothioic s-acid Chemical compound SC(=O)C1=CC=CC=C1 UIJGNTRUPZPVNG-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- XSEUMFJMFFMCIU-UHFFFAOYSA-N buformin Chemical compound CCCC\N=C(/N)N=C(N)N XSEUMFJMFFMCIU-UHFFFAOYSA-N 0.000 description 1
- DAQREMPZDNTSMS-UHFFFAOYSA-M butyl(triphenyl)phosphanium;thiocyanate Chemical compound [S-]C#N.C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 DAQREMPZDNTSMS-UHFFFAOYSA-M 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
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- 229910052570 clay Inorganic materials 0.000 description 1
- 150000004700 cobalt complex Chemical class 0.000 description 1
- FCEOGYWNOSBEPV-FDGPNNRMSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FCEOGYWNOSBEPV-FDGPNNRMSA-N 0.000 description 1
- JUPWRUDTZGBNEX-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O JUPWRUDTZGBNEX-UHFFFAOYSA-N 0.000 description 1
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- 150000004699 copper complex Chemical class 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- ZKXWKVVCCTZOLD-FDGPNNRMSA-N copper;(z)-4-hydroxypent-3-en-2-one Chemical compound [Cu].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O ZKXWKVVCCTZOLD-FDGPNNRMSA-N 0.000 description 1
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- 230000007423 decrease Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
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- OJLGWNFZMTVNCX-UHFFFAOYSA-N dioxido(dioxo)tungsten;zirconium(4+) Chemical compound [Zr+4].[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O OJLGWNFZMTVNCX-UHFFFAOYSA-N 0.000 description 1
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- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
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- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
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- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
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- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
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- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- AQBLLJNPHDIAPN-LNTINUHCSA-K iron(3+);(z)-4-oxopent-2-en-2-olate Chemical compound [Fe+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O AQBLLJNPHDIAPN-LNTINUHCSA-K 0.000 description 1
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
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- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
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- 125000004957 naphthylene group Chemical group 0.000 description 1
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- 150000002815 nickel Chemical class 0.000 description 1
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
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- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- JFOJYGMDZRCSPA-UHFFFAOYSA-J octadecanoate;tin(4+) Chemical compound [Sn+4].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O JFOJYGMDZRCSPA-UHFFFAOYSA-J 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000001477 organic nitrogen group Chemical group 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- PRCNQQRRDGMPKS-UHFFFAOYSA-N pentane-2,4-dione;zinc Chemical compound [Zn].CC(=O)CC(C)=O.CC(=O)CC(C)=O PRCNQQRRDGMPKS-UHFFFAOYSA-N 0.000 description 1
- CUQCMXFWIMOWRP-UHFFFAOYSA-N phenyl biguanide Chemical compound NC(N)=NC(N)=NC1=CC=CC=C1 CUQCMXFWIMOWRP-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
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- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
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- 239000012286 potassium permanganate Substances 0.000 description 1
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- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- GHPYAGKTTCKKDF-UHFFFAOYSA-M tetraphenylphosphanium;thiocyanate Chemical compound [S-]C#N.C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 GHPYAGKTTCKKDF-UHFFFAOYSA-M 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical class SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- JBCJMTUHAXHILC-UHFFFAOYSA-N zinc;octanoic acid Chemical compound [Zn+2].CCCCCCCC(O)=O JBCJMTUHAXHILC-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/10—Esters; Ether-esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08L27/18—Homopolymers or copolymers or tetrafluoroethene
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- C—CHEMISTRY; METALLURGY
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Description
[1]成分(A)エポキシ樹脂、成分(B)活性エステル化合物、成分(C)無機充填材、及び成分(D)フッ素系充填材を含む樹脂組成物であって、
前記樹脂組成物中の不揮発成分を100質量%とした場合に、前記成分(D)の含有量が10質量%〜40質量%であり、
前記成分(C)及び前記成分(D)の含有量の合計を100質量%とした場合に、前記成分(D)が20質量%〜70質量%である、樹脂組成物。
[2]前記成分(D)が、フッ素系ポリマー粒子である、[1]に記載の樹脂組成物。
[3]前記フッ素系ポリマー粒子が、ポリテトラフルオロエチレン(PTFE)粒子である、[2]に記載の樹脂組成物。
[4]成分(E)不飽和炭化水素基を有する化合物をさらに含む、[1]〜[3]のいずれか1つに記載の樹脂組成物。
[5]前記成分(E)が、アクリル基、メタクリル基、スチリル基、アリル基、ビニル基及びプロペニル基からなる群から選択される1以上の不飽和炭化水素基を有する化合物である、[4]に記載の樹脂組成物。
[6]前記成分(E)が、ビニル基を有し、かつ5員環以上の環状エーテル構造を有する化合物である、[5]に記載の樹脂組成物。
[7]高周波回路基板の絶縁層形成用である、[1]〜[6]のいずれか1つに記載の樹脂組成物。
[8]支持体と、該支持体上に設けられた[1]〜[6]のいずれか1つに記載の樹脂組成物を含む樹脂組成物層とを有する接着フィルム。
[9][1]〜[6]のいずれか1つに記載の樹脂組成物の硬化物からなる絶縁層を含む、高周波回路基板。
[10][9]に記載の高周波回路基板を備える、半導体装置。
樹脂組成物は、成分(A)エポキシ樹脂、成分(B)活性エステル化合物、成分(C)無機充填材、及び成分(D)フッ素系充填材を含む樹脂組成物であって、樹脂組成物中の不揮発成分を100質量%とした場合に、成分(D)の含有量が10質量%〜40質量%であり、成分(C)及び成分(D)の含有量の合計を100質量%とした場合に、成分(D)が20質量%〜70質量%である。以下、本発明の樹脂組成物に含まれる各成分について詳細に説明する。
樹脂組成物は、成分(A)エポキシ樹脂を含有する。エポキシ樹脂としては、例えば、ビキシレノール型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ビスフェノールAF型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、トリスフェノール型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、tert−ブチル−カテコール型エポキシ樹脂、ナフタレン型エポキシ樹脂、ナフトール型エポキシ樹脂、アントラセン型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、グリシジルエステル型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、線状脂肪族エポキシ樹脂、ブタジエン構造を有するエポキシ樹脂、脂環式エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂、シクロヘキサンジメタノール型エポキシ樹脂、ナフチレンエーテル型エポキシ樹脂、トリメチロール型エポキシ樹脂、テトラフェニルエタン型エポキシ樹脂が挙げられる。エポキシ樹脂は1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
成分(B)活性エステル化合物は、1分子中に1個以上の活性エステル基を有する化合物である。通常、活性エステル化合物は、既に説明した成分(A)エポキシ樹脂と反応して樹脂組成物を硬化させる硬化剤として機能できる。成分(B)活性エステル化合物を用いることにより、樹脂組成物の硬化物の誘電正接を低くすることができ、さらに通常は、表面粗さの小さい絶縁層を得ることができる。
前記式中、nは、繰り返し単位の平均数であって、0.05〜2.5である。中でも、誘電正接を低下させ、耐熱性を向上させるという観点から、nは、0.25〜1.5であることが好ましい。
樹脂組成物は、成分(C)無機充填材を含有している。無機充填材の材料は特に限定されない。無機充填材の材料としては、例えば、シリカ、アルミナ、ガラス、コーディエライト、シリコン酸化物、硫酸バリウム、炭酸バリウム、タルク、クレー、雲母粉、酸化亜鉛、ハイドロタルサイト、ベーマイト、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、酸化マグネシウム、窒化ホウ素、窒化アルミニウム、窒化マンガン、ホウ酸アルミニウム、炭酸ストロンチウム、チタン酸ストロンチウム、チタン酸カルシウム、チタン酸マグネシウム、チタン酸ビスマス、酸化チタン、酸化ジルコニウム、チタン酸バリウム、チタン酸ジルコン酸バリウム、ジルコン酸バリウム、ジルコン酸カルシウム、リン酸ジルコニウム、及びリン酸タングステン酸ジルコニウムが挙げられる。これらの中でもシリカが特に好適である。またシリカとしては球形シリカが好ましい。無機充填材は1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
樹脂組成物は、成分(D)フッ素系充填材を含有している。ここで「フッ素系」とは、フッ素原子を含むことをいう。また「フッ素系充填材」とは、フッ素原子を含む化合物を材料として含む充填材をいう。成分(D)は、粒子状であり、その粒径は特に限定されない。成分(D)の平均粒径は、樹脂組成物中における分散性に優れるので、5μm以下であることが好ましく、4μm以下であることがより好ましく、3μm以下であることがさらに好ましい。成分(D)の平均粒径は、0.05μm以上であることが好ましく、0.08μm以上であることがより好ましく、0.10μm以上であることがさらに好ましい。よって、成分(D)は、平均粒径が0.05μm〜5μmであることが好ましく、0.08μm〜4μmであることがより好ましく、0.10μm〜3μmであることがさらに好ましい。
樹脂組成物は、成分(E)を含有していてもよい。成分(E)の不飽和結合部位が反応して形成される分子構造部位を硬化物が有することにより、硬化物の極性が小さくなり、誘電正接の値を低減することができる。
式(B−2)中、R19〜R26は、それぞれ独立に、水素原子、炭素原子数6以下のアルキル基又はフェニル基を表し、好ましくは水素原子又はメチル基である。
式(B−3)中、R27〜R34は、それぞれ独立に、水素原子、炭素原子数6以下のアルキル基又はフェニル基を表し、好ましくは水素原子又はメチル基である。Eは、炭素原子数20以下の直鎖状、分岐状又は環状の2価の炭化水素基を表す。
樹脂組成物は、成分(F)硬化促進剤を含有していてもよい。硬化促進剤としては、例えば、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤、グアニジン系硬化促進剤、金属系硬化促進剤、過酸化物系硬化促進剤が挙げられる。硬化促進剤としては、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤、金属系硬化促進剤が好ましく、アミン系硬化促進剤、イミダゾール系硬化促進剤、金属系硬化促進剤がより好ましい。硬化促進剤は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
樹脂組成物は、成分(G)熱可塑性樹脂を含有していてもよい。熱可塑性樹脂としては、例えば、フェノキシ樹脂、ポリビニルアセタール樹脂、ポリオレフィン樹脂、ポリブタジエン樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリエーテルイミド樹脂、ポリスルホン樹脂、ポリエーテルスルホン樹脂、ポリカーボネート樹脂、ポリエーテルエーテルケトン樹脂、ポリエステル樹脂が挙げられる。熱可塑性樹脂としては、フェノキシ樹脂が好ましい。熱可塑性樹脂は、1種単独で用いてもよく、又は2種以上を組み合わせて用いてもよい。
樹脂組成物は、成分(H)難燃剤を含有していてもよい。難燃剤としては、例えば、有機リン系難燃剤、有機系窒素含有リン化合物、窒素化合物、シリコーン系難燃剤、金属水酸化物が挙げられる。難燃剤は1種単独で用いてもよく、又は2種以上を併用してもよい。
樹脂組成物は、さらに必要に応じて、任意の添加剤を含んでいてもよい。かかる任意の添加剤としては、例えば、有機銅化合物、有機亜鉛化合物及び有機コバルト化合物等の有機金属化合物、並びに増粘剤、消泡剤、レベリング剤、密着性付与剤、及び着色剤等の樹脂添加剤が挙げられる。
接着フィルムは、支持体と、該支持体に設けられた、既に説明した樹脂組成物を含む樹脂組成物層とを備えている。
支持体としては、例えば、プラスチック材料からなるフィルム、金属箔、離型紙が挙げられる。支持体としては、プラスチック材料からなるフィルム、金属箔が好ましい。
接着フィルムが備える樹脂組成物層は、樹脂ワニスの塗膜を半硬化した薄膜である。接着フィルムは、例えば、有機溶剤に樹脂組成物を溶解した樹脂ワニスを調製し、この樹脂ワニスを、ダイコーター等を用いて支持体に塗布し、樹脂ワニスの塗膜をある程度乾燥させて樹脂組成物層とすることにより製造することができる。
高周波回路基板にかかる絶縁層は、既に説明した接着フィルムに代えて、プリプレグを用いて形成してもよい。プリプレグは、シート状繊維基材に後述する樹脂組成物を含浸させて形成することができる。
本発明の高周波回路基板は、高周波回路基板の絶縁層形成用である、既に説明した樹脂組成物の硬化物により形成された絶縁層を含む。
「内層回路基板」とは、コア基材である例えばガラスエポキシ基板、金属基板、ポリエステル基板、ポリイミド基板、BTレジン基板、熱硬化型ポリフェニレンエーテル基板といった基板の片面側又は両面側の主表面に、直接的又は間接的に所定のパターンにパターン加工された導体層(配線層)、すなわち電気的な回路を備えている基板をいう。
高周波回路基板にかかる絶縁層は、後述する樹脂組成物を熱硬化した硬化物の層である。かかる硬化物からなる絶縁層は、特に高周波回路基板用の絶縁層に好適に適用することができる。
次に、高周波回路基板の製造方法について説明する。
工程(I)内層回路基板に、接着フィルムを、該接着フィルムの樹脂組成物層が内層回路基板と接合するように積層する工程
工程(II)樹脂組成物層を熱硬化して絶縁層を形成する工程
半導体装置は、既に説明した高周波回路基板を含む。換言すると、本発明の半導体装置は、本発明の高周波回路基板を用いて製造することができる。
ビキシレノール型エポキシ樹脂(三菱化学社製「YX4000HK」、エポキシ当量約185)20部、をソルベントナフサ20部に撹拌しながら加熱溶解し、その後常温にまで冷却した。無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)60部、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)30部を混合し、3本ロールで混練し分散させた。そこへ、活性エステル系硬化剤(DIC社製「HPC−8000−65T」、活性基当量約223の不揮発成分65%のトルエン溶液)46.1部、5員環以上の環状エーテル構造を有する化合物(ビニル化合物)(新中村化学工業社製「A−DOG」)10部、硬化促進剤である4−ジメチルアミノピリジン(DMAP)の5%のMEK溶液2部及びジクミルパーオキサイド(日油社製「パークミル D」)0.13部を混合し、回転ミキサーで均一に分散して、樹脂ワニス1を調製した。
ビキシレノール型エポキシ樹脂(三菱化学社製「YX4000HK」、エポキシ当量約185)を30部、無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)を50部に変更し、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)を21部に変更し、活性エステル系硬化剤(DIC社製「HPC−8000−65T」、活性基当量約223の不揮発成分65%のトルエン溶液)を61.5部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス2を調製した。
無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)を80部に変更し、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)を20部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス3を調製した。
無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)を30部に変更し、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)を60部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス4を調製した。
ビキシレノール型エポキシ樹脂(三菱化学社製「YX4000HK」、エポキシ当量約185)を30部に変更し、無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)を100部に変更し、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)を20部に変更し、活性エステル系硬化剤(DIC社製「HPC−8000−65T」、活性基当量約223の不揮発成分65%のトルエン溶液)を61.5部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス5を調製した。
無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)を15部に変更し、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)を50部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス6を調製した。
無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)を20部に変更し、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)を5部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス7を調製した。
無機充填材(アドマテックス社製「SO−C2」、平均粒径0.5μm、単位表面積当たりのカーボン量0.38mg/m2)を35部に変更し、PTFE粒子(ダイキン工業(株)製「ルブロンL−2」、平均粒子径3μm)を80部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス8を調製した。
活性エステル系硬化剤(DIC社製「HPC−8000−65T」、活性基当量約223の不揮発成分65%のトルエン溶液)をノボラック構造を有するナフトール系硬化剤(フェノール性水酸基当量215、新日鉄住金化学社製「SN−485」、不揮発成分50%のMEK溶液)を40部に変更した。以上の事項以外は実施例1と同様にして樹脂ワニス9を調製した。
ビキシレノール型エポキシ樹脂(三菱化学社製「YX4000HK」、エポキシ当量約185)を20部に変更し、活性エステル系硬化剤(DIC社製「HPC−8000−65T」、活性基当量約223の不揮発成分65%のトルエン溶液)をノボラック構造を有するナフトール系硬化剤(フェノール性水酸基当量215、新日鉄住金化学社製「SN−485」、不揮発成分50%のMEK溶液)を20部に変更した。以上の事項以外は比較例5と同様にして樹脂ワニス10を調製した。
上述した実施例及び比較例で得た樹脂組成物を用いて、下記のとおり樹脂組成物層を硬化した硬化物フィルムを作製し、下記の方法によって評価した。
実施例及び比較例で得た樹脂ワニス1〜10それぞれを、離型処理されたPETフィルム(リンテック(株)製「PET501010」)の一方の主表面に、乾燥後の樹脂組成物層の厚さが40μmとなるようにダイコーターにて均一に塗布し、80℃〜110℃(平均95℃)で6分間乾燥させた。その後、200℃で90分間熱処理し、支持体を剥離して除去することで硬化物フィルムを得た。得られた硬化物フィルムを長さ80mm、幅2mmの短冊状に切り出し評価用サンプルとした。
得られた評価用サンプルについて、アジレントテクノロジーズ(Agilent Technologies)社製「HP8362B」を用いて、空洞共振摂動法により、測定周波数10GHz、測定温度25℃の条件にて、誘電率及び誘電正接を測定した。
(1)内層回路基板の粗化処理
内層回路基板であるガラス布基材エポキシ樹脂両面銅張積層板(銅箔の厚さ18μm、基板の厚さ0.4mm、パナソニック(株)製「R1515A」)の両面を、メック(株)製「CZ8101」に浸漬し、両面の銅箔を厚さ方向に1μmエッチングすることにより銅箔の表面の粗化処理を行った。
実施例及び比較例で調製された樹脂ワニス1〜10それぞれを三井金属鉱業(株)製「MT18Ex」箔の一方の表面に、乾燥後の樹脂組成物層の厚さが40μmとなるようにダイコーターにて均一に塗布し、80℃〜110℃(平均95℃)で6分間乾燥させ、樹脂組成物層付き銅箔を作製した。この樹脂組成物層付き銅箔をバッチ式真空加圧ラミネーター(名機(株)製「MVLP-500」)を用いて、樹脂組成物層が内層回路基板(銅箔)と接合するように、内層回路基板の両面にラミネート処理した。ラミネート処理は、30秒間減圧して気圧を13hPa以下とした後、100℃、圧力0.74MPaで30秒間圧着することにより行った。
ラミネートされた樹脂組成物層付き銅箔の樹脂組成物層を200℃、90分間の条件で硬化して硬化体とする硬化処理を行い、銅箔付き硬化体が内層回路基板に積層された積層体を形成した。
上記(3)で得られた銅箔付き硬化体から銅箔を剥離した後、露出した硬化体の表面に、厚さが25μmとなるように硫酸銅電解めっきを行い、銅層である導体層を形成した。次に、導体層が形成された積層体に対し、アニール処理を180℃にて30分間行い、評価用回路基板とした。この評価用回路基板を用いて、導体層の引き剥がし強さ(ピール強度)の測定を行った。
評価用回路基板に、幅10mm、長さ100mmの短冊状の切込みをいれ、長さ方向の一端を剥がしてつかみ具((株)ティー・エス・イー、オートコム型試験機AC−50C−SL)で掴み、室温(25℃)中にて、50mm/分の速度で垂直方向に35mmを引き剥がした時の荷重(kgf/cm(N/cm))を測定した。
ここで、測定された荷重が0.3kgf/cm超である場合を「良」と評価し、0.3kgf/cm以下である場合を「不良」と評価した。
評価の結果を、下記表1に示す。
Claims (8)
- 成分(A)エポキシ樹脂、成分(B)活性エステル化合物、成分(C)無機充填材、及び成分(D)フッ素系充填材を含む樹脂組成物であって、
前記成分(C)がシリカであり、前記樹脂組成物中の不揮発成分を100質量%とした場合に、該シリカの含有量が10質量%〜70質量%であり、
前記成分(D)がポリテトラフルオロエチレン(PTFE)粒子であり、前記樹脂組成物中の不揮発成分を100質量%とした場合に、該ポリテトラフルオロエチレン(PTFE)粒子の含有量が10質量%〜40質量%であり、
前記成分(C)及び前記成分(D)の含有量の合計を100質量%とした場合に、前記成分(D)が20質量%〜70質量%である、樹脂組成物。 - 成分(E)不飽和炭化水素基を有する化合物をさらに含む、請求項1に記載の樹脂組成物。
- 前記成分(E)が、アクリル基、メタクリル基、スチリル基、アリル基、ビニル基及びプロペニル基からなる群から選択される1以上の不飽和炭化水素基を有する化合物である、請求項2に記載の樹脂組成物。
- 前記成分(E)が、ビニル基を有し、かつ5員環以上の環状エーテル構造を有する化合物である、請求項3に記載の樹脂組成物。
- 高周波回路基板の絶縁層形成用である、請求項1〜4のいずれか1項に記載の樹脂組成物。
- 支持体と、該支持体上に設けられた請求項1〜5のいずれか1項に記載の樹脂組成物を含む樹脂組成物層とを有する接着フィルム。
- 請求項1〜5のいずれか1項に記載の樹脂組成物の硬化物からなる絶縁層を含む、高周波回路基板。
- 請求項7に記載の高周波回路基板を備える、半導体装置。
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