JP6826214B2 - 酸化物接合ウエハスタックにおけるダイ封入 - Google Patents

酸化物接合ウエハスタックにおけるダイ封入 Download PDF

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JP6826214B2
JP6826214B2 JP2019563579A JP2019563579A JP6826214B2 JP 6826214 B2 JP6826214 B2 JP 6826214B2 JP 2019563579 A JP2019563579 A JP 2019563579A JP 2019563579 A JP2019563579 A JP 2019563579A JP 6826214 B2 JP6826214 B2 JP 6826214B2
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wafer
semiconductor
cavity
integrated circuit
assembly
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JP2020520128A (ja
JP2020520128A5 (enExample
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ジェイ. ドラブ,ジョン
ジェイ. ドラブ,ジョン
ジー. ミルン,ジェイソン
ジー. ミルン,ジェイソン
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Raytheon Co
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Raytheon Co
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    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
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    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07252—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in structures or sizes
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    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

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  • Wire Bonding (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2019563579A 2017-05-16 2017-11-16 酸化物接合ウエハスタックにおけるダイ封入 Active JP6826214B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/596,663 2017-05-16
US15/596,663 US10242967B2 (en) 2017-05-16 2017-05-16 Die encapsulation in oxide bonded wafer stack
PCT/US2017/061922 WO2018212785A1 (en) 2017-05-16 2017-11-16 Die encapsulation in oxide bonded wafer stack

Publications (3)

Publication Number Publication Date
JP2020520128A JP2020520128A (ja) 2020-07-02
JP2020520128A5 JP2020520128A5 (enExample) 2020-08-13
JP6826214B2 true JP6826214B2 (ja) 2021-02-03

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US (2) US10242967B2 (enExample)
EP (1) EP3625825A1 (enExample)
JP (1) JP6826214B2 (enExample)
KR (2) KR102301805B1 (enExample)
CN (1) CN110494975A (enExample)
CA (1) CA3062895C (enExample)
IL (1) IL268996B (enExample)
SG (1) SG11201907133XA (enExample)
TW (1) TWI711090B (enExample)
WO (1) WO2018212785A1 (enExample)

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Publication number Priority date Publication date Assignee Title
AU2017281280B2 (en) * 2016-06-20 2022-01-06 Butterfly Network, Inc. Electrical contact arrangement for microfabricated ultrasonic transducer
US9859245B1 (en) * 2016-09-19 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure with bump and method for forming the same
US10489544B2 (en) 2016-12-14 2019-11-26 iCometrue Company Ltd. Logic drive based on standard commodity FPGA IC chips
US11625523B2 (en) 2016-12-14 2023-04-11 iCometrue Company Ltd. Logic drive based on standard commodity FPGA IC chips
US10447274B2 (en) 2017-07-11 2019-10-15 iCometrue Company Ltd. Logic drive based on standard commodity FPGA IC chips using non-volatile memory cells
CN109285825B (zh) * 2017-07-21 2021-02-05 联华电子股份有限公司 芯片堆叠结构及管芯堆叠结构的制造方法
US10957679B2 (en) 2017-08-08 2021-03-23 iCometrue Company Ltd. Logic drive based on standardized commodity programmable logic semiconductor IC chips
US10630296B2 (en) 2017-09-12 2020-04-21 iCometrue Company Ltd. Logic drive with brain-like elasticity and integrality based on standard commodity FPGA IC chips using non-volatile memory cells
US10608642B2 (en) 2018-02-01 2020-03-31 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips comprising non-volatile radom access memory cells
US10623000B2 (en) 2018-02-14 2020-04-14 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips
US10644826B2 (en) 2018-02-23 2020-05-05 Advanced Micro Devices, Inc. Flexibile interfaces using through-silicon via technology
US10509752B2 (en) * 2018-04-27 2019-12-17 Advanced Micro Devices, Inc. Configuration of multi-die modules with through-silicon vias
US10608638B2 (en) 2018-05-24 2020-03-31 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips
US12476637B2 (en) 2018-05-24 2025-11-18 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips
US11031345B2 (en) * 2018-08-14 2021-06-08 Medtronic, Inc. Integrated circuit package and method of forming same
US11309334B2 (en) 2018-09-11 2022-04-19 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells
DE102018122515B4 (de) * 2018-09-14 2020-03-26 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiteroxid- oder Glas-basierten Verbindungskörpers mit Verdrahtungsstruktur
US10937762B2 (en) 2018-10-04 2021-03-02 iCometrue Company Ltd. Logic drive based on multichip package using interconnection bridge
KR102477355B1 (ko) * 2018-10-23 2022-12-15 삼성전자주식회사 캐리어 기판 및 이를 이용한 기판 처리 장치
US11616046B2 (en) 2018-11-02 2023-03-28 iCometrue Company Ltd. Logic drive based on chip scale package comprising standardized commodity programmable logic IC chip and memory IC chip
US11211334B2 (en) 2018-11-18 2021-12-28 iCometrue Company Ltd. Logic drive based on chip scale package comprising standardized commodity programmable logic IC chip and memory IC chip
CN109585434B (zh) * 2018-11-30 2020-05-15 华进半导体封装先导技术研发中心有限公司 一种晶圆级光感系统封装结构及其制造方法
JP7242342B2 (ja) * 2019-02-22 2023-03-20 三菱重工業株式会社 マルチチップモジュール、電子機器およびマルチチップモジュールの製造方法
US11798865B2 (en) 2019-03-04 2023-10-24 Intel Corporation Nested architectures for enhanced heterogeneous integration
EP3709346B1 (en) * 2019-03-15 2023-01-18 Infineon Technologies Austria AG An electronic module comprising a semiconductor package with integrated clip and fastening element
US11227838B2 (en) 2019-07-02 2022-01-18 iCometrue Company Ltd. Logic drive based on multichip package comprising standard commodity FPGA IC chip with cooperating or supporting circuits
US10985154B2 (en) 2019-07-02 2021-04-20 iCometrue Company Ltd. Logic drive based on multichip package comprising standard commodity FPGA IC chip with cryptography circuits
US11887930B2 (en) 2019-08-05 2024-01-30 iCometrue Company Ltd. Vertical interconnect elevator based on through silicon vias
EP3786108A1 (en) 2019-08-30 2021-03-03 Imec VZW Fabrication method for a mems device
CN110579516A (zh) * 2019-09-02 2019-12-17 青岛歌尔智能传感器有限公司 二氧化氮气体检测器件及其制作方法、以及电子产品
US11452199B2 (en) 2019-09-12 2022-09-20 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Electronic module with single or multiple components partially surrounded by a thermal decoupling gap
US11637056B2 (en) 2019-09-20 2023-04-25 iCometrue Company Ltd. 3D chip package based on through-silicon-via interconnection elevator
CN112670191A (zh) * 2019-10-16 2021-04-16 长鑫存储技术有限公司 半导体封装方法、半导体封装结构及封装体
US11387204B2 (en) * 2020-01-16 2022-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of fabricating the same
US11600526B2 (en) 2020-01-22 2023-03-07 iCometrue Company Ltd. Chip package based on through-silicon-via connector and silicon interconnection bridge
US11784101B2 (en) 2020-03-02 2023-10-10 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor devices comprising a lid structure and methods of manufacturing semiconductor devices comprising a lid structure
US11309249B2 (en) * 2020-05-04 2022-04-19 Nanya Technology Corporation Semiconductor package with air gap and manufacturing method thereof
EP4177962B1 (en) * 2020-07-03 2025-10-08 Mitsubishi Electric Corporation Infrared sensor and infrared sensor manufacturing method
CN112234053B (zh) * 2020-10-15 2022-10-04 联合微电子中心有限责任公司 晶圆堆叠方法、晶圆堆叠结构和半导体封装
CN112331617B (zh) * 2020-11-05 2023-06-09 联合微电子中心有限责任公司 一种埋入式键合工艺三维集成方法
KR20230128062A (ko) * 2020-12-30 2023-09-01 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 직접 접합 구조
US12046477B2 (en) 2021-01-08 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. By-site-compensated etch back for local planarization/topography adjustment
US12519033B2 (en) 2021-01-08 2026-01-06 iCometrue Company Ltd. Micro heat pipe for use in semiconductor IC chip package
US12261186B2 (en) * 2021-03-25 2025-03-25 Raytheon Company Mosaic focal plane array
US12199008B2 (en) * 2021-03-31 2025-01-14 Texas Instruments Incorporated Package heat dissipation including a die attach film
US12176278B2 (en) 2021-05-30 2024-12-24 iCometrue Company Ltd. 3D chip package based on vertical-through-via connector
US11688700B2 (en) 2021-06-11 2023-06-27 Raytheon Company Die package having security features
US12278255B2 (en) 2021-06-11 2025-04-15 Raytheon Company Thin film obscurant for microelectronics
CN113471083B (zh) * 2021-09-03 2021-11-02 南通汇丰电子科技有限公司 一种半导体堆叠封装结构及其制备方法
US12633338B2 (en) 2021-09-24 2026-05-19 iCometrue Company Ltd. Field programmable multichip package based on field-programmable-gate-array (FPGA) integrated-circuit (IC) chip
US12268012B2 (en) 2021-09-24 2025-04-01 iCometrue Company Ltd. Multi-output look-up table (LUT) for use in coarse-grained field-programmable-gate-array (FPGA) integrated-circuit (IC) chip
US20230139175A1 (en) * 2021-11-01 2023-05-04 Micron Technology, Inc. Semiconductor device assemblies including monolithic silicon structures for thermal dissipation and methods of making the same
US12707967B2 (en) 2021-11-01 2026-08-11 Micron Technology, Inc. Semiconductor device assemblies including monolithic silicon structures for thermal dissipation and methods of making the same
CN114408857B (zh) * 2022-03-28 2022-09-06 南京声息芯影科技有限公司 有源晶圆键合架构的CMUT-on-CMOS的超声换能器及制造方法
US20240038743A1 (en) * 2022-07-28 2024-02-01 Avago Technologies International Sales Pte. Limited Smaller module by stacking
JPWO2025004919A1 (enExample) * 2023-06-26 2025-01-02
US20250167083A1 (en) * 2023-11-22 2025-05-22 Nxp Usa, Inc. Panel level fabrication of stacked electronic device packages with enclosed cavities
US12690459B2 (en) * 2023-12-21 2026-07-21 Nxp Usa, Inc. Device packages with integrated batteries
WO2025168207A1 (en) * 2024-02-07 2025-08-14 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Electronic device with electronic component connected to two organic-type component carriers being connected by a connection structure

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145381A (ja) * 1997-11-12 1999-05-28 Denso Corp 半導体マルチチップモジュール
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6818464B2 (en) 2001-10-17 2004-11-16 Hymite A/S Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
JP2004071597A (ja) * 2002-08-01 2004-03-04 Renesas Technology Corp 半導体モジュール
US7138293B2 (en) * 2002-10-04 2006-11-21 Dalsa Semiconductor Inc. Wafer level packaging technique for microdevices
JP4342174B2 (ja) 2002-12-27 2009-10-14 新光電気工業株式会社 電子デバイス及びその製造方法
US7118991B2 (en) 2004-04-01 2006-10-10 Delphi Technologies, Inc. Encapsulation wafer process
US7045827B2 (en) 2004-06-24 2006-05-16 Gallup Kendra J Lids for wafer-scale optoelectronic packages
US7326629B2 (en) 2004-09-10 2008-02-05 Agency For Science, Technology And Research Method of stacking thin substrates by transfer bonding
US7262622B2 (en) * 2005-03-24 2007-08-28 Memsic, Inc. Wafer-level package for integrated circuits
US7295029B2 (en) 2005-03-24 2007-11-13 Memsic, Inc. Chip-scale package for integrated circuits
JP2007123705A (ja) * 2005-10-31 2007-05-17 Elpida Memory Inc 積層型半導体装置及びその製造方法
DE102006062473A1 (de) 2006-12-28 2008-07-03 Qimonda Ag Halbleiterbauelement mit auf einem Substrat montiertem Chip
US8164153B2 (en) 2009-05-27 2012-04-24 Continental Automotive Systems, Inc. Thin semiconductor device having embedded die support and methods of making the same
US8263434B2 (en) * 2009-07-31 2012-09-11 Stats Chippac, Ltd. Semiconductor device and method of mounting die with TSV in cavity of substrate for electrical interconnect of Fi-PoP
US8241964B2 (en) * 2010-05-13 2012-08-14 Stats Chippac, Ltd. Semiconductor device and method of embedding bumps formed on semiconductor die into penetrable adhesive layer to reduce die shifting during encapsulation
KR101943460B1 (ko) * 2011-02-15 2019-01-29 에스케이하이닉스 주식회사 반도체 패키지
US8653673B2 (en) 2011-12-20 2014-02-18 Raytheon Company Method for packaging semiconductors at a wafer level
US8697542B2 (en) 2012-04-12 2014-04-15 The Research Foundation Of State University Of New York Method for thin die-to-wafer bonding
KR101932495B1 (ko) * 2012-05-11 2018-12-27 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
JP6058962B2 (ja) * 2012-09-29 2017-01-11 京セラ株式会社 半導体素子収納用配線基板およびその製造方法
US8921992B2 (en) 2013-03-14 2014-12-30 Raytheon Company Stacked wafer with coolant channels
US9595526B2 (en) * 2013-08-09 2017-03-14 Apple Inc. Multi-die fine grain integrated voltage regulation
WO2015136998A1 (ja) * 2014-03-10 2015-09-17 三菱重工業株式会社 マルチチップモジュール、オンボードコンピュータ、センサインターフェース基板、及びマルチチップモジュール製造方法
US20150262902A1 (en) * 2014-03-12 2015-09-17 Invensas Corporation Integrated circuits protected by substrates with cavities, and methods of manufacture
US9355997B2 (en) * 2014-03-12 2016-05-31 Invensas Corporation Integrated circuit assemblies with reinforcement frames, and methods of manufacture
CN104051337B (zh) 2014-04-24 2017-02-15 上海珏芯光电科技有限公司 立体堆叠集成电路系统芯片封装的制造方法与测试方法
US9741649B2 (en) * 2014-06-04 2017-08-22 Invensas Corporation Integrated interposer solutions for 2D and 3D IC packaging
US20150380343A1 (en) 2014-06-27 2015-12-31 Raytheon Company Flip chip mmic having mounting stiffener
US9067779B1 (en) * 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
US9576942B1 (en) * 2015-12-18 2017-02-21 Intel Corporation Integrated circuit assembly that includes stacked dice

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