JP6817835B2 - 撮像装置及び撮像システム - Google Patents

撮像装置及び撮像システム Download PDF

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Publication number
JP6817835B2
JP6817835B2 JP2017020334A JP2017020334A JP6817835B2 JP 6817835 B2 JP6817835 B2 JP 6817835B2 JP 2017020334 A JP2017020334 A JP 2017020334A JP 2017020334 A JP2017020334 A JP 2017020334A JP 6817835 B2 JP6817835 B2 JP 6817835B2
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JP
Japan
Prior art keywords
light
compound semiconductor
substrate
layer
light emitting
Prior art date
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Active
Application number
JP2017020334A
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English (en)
Japanese (ja)
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JP2018129359A (ja
JP2018129359A5 (https=
Inventor
武志 内田
武志 内田
潤 伊庭
潤 伊庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017020334A priority Critical patent/JP6817835B2/ja
Priority to PCT/JP2018/003189 priority patent/WO2018147141A1/ja
Publication of JP2018129359A publication Critical patent/JP2018129359A/ja
Priority to US16/526,168 priority patent/US10861897B2/en
Publication of JP2018129359A5 publication Critical patent/JP2018129359A5/ja
Application granted granted Critical
Publication of JP6817835B2 publication Critical patent/JP6817835B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2017020334A 2017-02-07 2017-02-07 撮像装置及び撮像システム Active JP6817835B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017020334A JP6817835B2 (ja) 2017-02-07 2017-02-07 撮像装置及び撮像システム
PCT/JP2018/003189 WO2018147141A1 (ja) 2017-02-07 2018-01-31 撮像装置及び撮像システム
US16/526,168 US10861897B2 (en) 2017-02-07 2019-07-30 Imaging device and imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017020334A JP6817835B2 (ja) 2017-02-07 2017-02-07 撮像装置及び撮像システム

Publications (3)

Publication Number Publication Date
JP2018129359A JP2018129359A (ja) 2018-08-16
JP2018129359A5 JP2018129359A5 (https=) 2020-04-02
JP6817835B2 true JP6817835B2 (ja) 2021-01-20

Family

ID=63107519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017020334A Active JP6817835B2 (ja) 2017-02-07 2017-02-07 撮像装置及び撮像システム

Country Status (3)

Country Link
US (1) US10861897B2 (https=)
JP (1) JP6817835B2 (https=)
WO (1) WO2018147141A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117352533B (zh) * 2023-12-06 2024-02-09 深圳市正东明光电子有限公司 发光二极管及制备方法
FR3159853B1 (fr) * 2024-03-04 2026-01-16 Commissariat Energie Atomique Dispositif optoelectronique comportant une diode electroluminescente superposee a un photodetecteur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526615A (en) 1978-08-11 1980-02-26 Semiconductor Res Found Method of and apparatus for receiving or emitting light
US5093879A (en) 1990-06-22 1992-03-03 International Business Machines Corporation Electro-optical connectors
JPH0521837A (ja) * 1991-07-17 1993-01-29 Ricoh Co Ltd 半導体機能素子
JP3217448B2 (ja) 1992-05-29 2001-10-09 株式会社東芝 インジウムバンプ接続方法
JPH0697490A (ja) * 1992-09-14 1994-04-08 Toshiba Corp 面型光半導体素子
US5567955A (en) * 1995-05-04 1996-10-22 National Research Council Of Canada Method for infrared thermal imaging using integrated gasa quantum well mid-infrared detector and near-infrared light emitter and SI charge coupled device
CA2447828C (en) * 2003-10-15 2012-07-03 National Research Council Of Canada Wavelength conversion device with avalanche multiplier
JP4315020B2 (ja) 2004-03-02 2009-08-19 ソニー株式会社 半導体集積回路装置およびその製造方法
JP5364526B2 (ja) * 2009-10-02 2013-12-11 三菱重工業株式会社 赤外線検出素子、赤外線検出装置及び赤外線検出素子の製造方法
JP2011142558A (ja) 2010-01-08 2011-07-21 Fujitsu Ltd イメージセンサおよび撮像システム
JP6141024B2 (ja) 2012-02-10 2017-06-07 キヤノン株式会社 撮像装置および撮像システム
US9543282B2 (en) * 2013-11-18 2017-01-10 Stmicroelectronics Pte Ltd. Optical sensor package
JP2016118417A (ja) 2014-12-19 2016-06-30 株式会社リコー 赤外線検出素子およびそれを用いた赤外線検出装置、赤外線撮像装置
JP6518071B2 (ja) 2015-01-26 2019-05-22 キヤノン株式会社 固体撮像装置およびカメラ
JP2016152374A (ja) 2015-02-19 2016-08-22 キヤノン株式会社 光電変換装置
JP2016218115A (ja) 2015-05-14 2016-12-22 キヤノン株式会社 光学素子の設計方法、光学素子アレイ、センサアレイおよび撮像装置
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP6732468B2 (ja) 2016-02-16 2020-07-29 キヤノン株式会社 光電変換装置及びその駆動方法

Also Published As

Publication number Publication date
US20190355776A1 (en) 2019-11-21
JP2018129359A (ja) 2018-08-16
US10861897B2 (en) 2020-12-08
WO2018147141A1 (ja) 2018-08-16

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