JP6817121B2 - フォトマスクの製造方法 - Google Patents

フォトマスクの製造方法 Download PDF

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Publication number
JP6817121B2
JP6817121B2 JP2017054052A JP2017054052A JP6817121B2 JP 6817121 B2 JP6817121 B2 JP 6817121B2 JP 2017054052 A JP2017054052 A JP 2017054052A JP 2017054052 A JP2017054052 A JP 2017054052A JP 6817121 B2 JP6817121 B2 JP 6817121B2
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Japan
Prior art keywords
optical film
manufacturing
photomask
film
display device
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JP2017054052A
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English (en)
Japanese (ja)
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JP2018055080A (ja
JP2018055080A5 (ja
Inventor
台勲 金
台勲 金
錫薫 李
錫薫 李
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Hoya Corp
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Hoya Corp
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Publication date
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Priority to TW106130468A priority Critical patent/TWI724233B/zh
Priority to KR1020170117996A priority patent/KR102387740B1/ko
Priority to CN201710859230.7A priority patent/CN107861334A/zh
Publication of JP2018055080A publication Critical patent/JP2018055080A/ja
Publication of JP2018055080A5 publication Critical patent/JP2018055080A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2017054052A 2016-09-21 2017-03-21 フォトマスクの製造方法 Active JP6817121B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW106130468A TWI724233B (zh) 2016-09-21 2017-09-06 光罩之製造方法、光罩、及顯示裝置之製造方法
KR1020170117996A KR102387740B1 (ko) 2016-09-21 2017-09-14 포토마스크의 제조 방법, 포토마스크, 및 표시 장치의 제조 방법
CN201710859230.7A CN107861334A (zh) 2016-09-21 2017-09-21 光掩模的制造方法、光掩模和显示装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016184151 2016-09-21
JP2016184151 2016-09-21

Related Child Applications (1)

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JP2020215221A Division JP7024055B2 (ja) 2016-09-21 2020-12-24 表示装置製造用フォトマスクの製造方法

Publications (3)

Publication Number Publication Date
JP2018055080A JP2018055080A (ja) 2018-04-05
JP2018055080A5 JP2018055080A5 (ja) 2019-11-21
JP6817121B2 true JP6817121B2 (ja) 2021-01-20

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JP2017054052A Active JP6817121B2 (ja) 2016-09-21 2017-03-21 フォトマスクの製造方法
JP2020215221A Active JP7024055B2 (ja) 2016-09-21 2020-12-24 表示装置製造用フォトマスクの製造方法

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KR (1) KR102387740B1 (zh)
CN (1) CN107844026A (zh)
TW (2) TW201823855A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021047464A (ja) * 2016-09-21 2021-03-25 Hoya株式会社 表示装置製造用フォトマスクの製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
KR100355228B1 (ko) 2000-01-18 2002-10-11 삼성전자 주식회사 하프톤 위상반전 마스크 및 그 제조방법
US7045255B2 (en) * 2002-04-30 2006-05-16 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP2005181722A (ja) 2003-12-19 2005-07-07 Semiconductor Leading Edge Technologies Inc ハーフトーン位相シフトマスク
US7651823B2 (en) 2004-06-16 2010-01-26 Hoya Corporation Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film
US7662520B2 (en) 2005-10-06 2010-02-16 National Kaohsiung First University Of Science And Technology High-transmittance attenuated phase-shift mask blank
JP4816197B2 (ja) * 2006-03-30 2011-11-16 大日本印刷株式会社 階調マスクおよびその製造方法
JP5080198B2 (ja) * 2007-10-12 2012-11-21 アルバック成膜株式会社 グレートーンマスク
TWI457696B (zh) * 2008-03-31 2014-10-21 Hoya Corp 空白光罩、光罩及空白光罩之製造方法
JP2010087333A (ja) 2008-10-01 2010-04-15 Seiko Epson Corp フォトマスク、半導体装置の製造方法、及び半導体装置
CN102129170B (zh) * 2010-01-15 2012-10-03 中芯国际集成电路制造(上海)有限公司 衰减相移掩膜制作方法
TWI461833B (zh) 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6157832B2 (ja) 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
JP2015212720A (ja) * 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
JP6298354B2 (ja) * 2014-05-14 2018-03-20 Hoya株式会社 フォトマスクの製造方法及びフォトマスク基板
JP5668168B1 (ja) * 2014-06-17 2015-02-12 株式会社エスケーエレクトロニクス プロキシミティ露光用フォトマスク
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
KR20160024222A (ko) * 2014-08-25 2016-03-04 주식회사 에스앤에스텍 평판 디스플레이용 포토마스크 및 그의 제조 방법
WO2016103843A1 (ja) * 2014-12-26 2016-06-30 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6665571B2 (ja) * 2015-02-16 2020-03-13 大日本印刷株式会社 フォトマスク、フォトマスクブランクス、およびフォトマスクの製造方法
JP2016224289A (ja) 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP2016095533A (ja) 2016-01-25 2016-05-26 信越化学工業株式会社 光パターン照射方法
TW201823855A (zh) 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021047464A (ja) * 2016-09-21 2021-03-25 Hoya株式会社 表示装置製造用フォトマスクの製造方法
JP7024055B2 (ja) 2016-09-21 2022-02-22 Hoya株式会社 表示装置製造用フォトマスクの製造方法

Also Published As

Publication number Publication date
KR20180032180A (ko) 2018-03-29
TW201823855A (zh) 2018-07-01
CN107844026A (zh) 2018-03-27
TW201823856A (zh) 2018-07-01
TWI724233B (zh) 2021-04-11
KR102387740B1 (ko) 2022-04-15
JP7024055B2 (ja) 2022-02-22
JP2018055080A (ja) 2018-04-05
JP2021047464A (ja) 2021-03-25

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