JP6816147B2 - 単結晶層、特に圧電層の製造方法 - Google Patents
単結晶層、特に圧電層の製造方法 Download PDFInfo
- Publication number
- JP6816147B2 JP6816147B2 JP2018532582A JP2018532582A JP6816147B2 JP 6816147 B2 JP6816147 B2 JP 6816147B2 JP 2018532582 A JP2018532582 A JP 2018532582A JP 2018532582 A JP2018532582 A JP 2018532582A JP 6816147 B2 JP6816147 B2 JP 6816147B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- seed layer
- composition
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 149
- 239000000463 material Substances 0.000 claims description 95
- 239000000203 mixture Substances 0.000 claims description 64
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 238000012546 transfer Methods 0.000 claims description 18
- 229910052787 antimony Inorganic materials 0.000 claims description 17
- 229910052758 niobium Inorganic materials 0.000 claims description 17
- 229910052715 tantalum Inorganic materials 0.000 claims description 17
- 229910052720 vanadium Inorganic materials 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 238000005304 joining Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 222
- 238000010897 surface acoustic wave method Methods 0.000 description 22
- 238000000407 epitaxy Methods 0.000 description 18
- 238000010924 continuous production Methods 0.000 description 11
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000006355 external stress Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 210000001520 comb Anatomy 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G35/00—Compounds of tantalum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Acoustics & Sound (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Description
− 1つは、SAW(表面音響波)という略語で知られている表面音響波フィルタであり、
− もう1つは、BAW(バルク音響波)という略語で知られているバルク音響波フィルタおよび共振器である。
これらの技術の総説については、W. SteichenおよびS. Ballandrasによる論文"Acoustic components used for filtering - Review of the different technologies", Techniques de l'Ingenieur [Engineering Technology], E2000, 2008 [1]を参照されたい。
組成物ABO3の圧電材料を含むドナー基板を提供する工程であって、
Aが、Li、Na、K、Hのうちの少なくとも1つの元素からなり、
Bが、Nb、Ta、Sb、Vのうちの少なくとも1つの元素からなる、提供工程と、
レシーバ基板を提供する工程と、
シード層が接合界面にあるように、レシーバ基板上にドナー基板を接合させ、続いてドナー基板を前記シード層と同程度に薄層化することによって、「シード層」と呼ばれる層をドナー基板からレシーバ基板上に移送する工程と、
組成物A’B’O3の単結晶層を、シード層の圧電材料ABO3上にエピタキシャルさせる成長工程であって、
A’が、以下の元素Li、Na、K、Hのうちの少なくとも1種からなり、
B’が、以下の元素Nb、Ta、Sb、Vのうちの少なくとも1種からなり、
A’がAとは異なるか、またはB’がBとは異なる、エピタキシャル成長工程と、
を含むことを特徴とする。
本発明を実施する一様式によれば、シード層の移送は、以下の工程:
前記組成物ABO3の圧電材料を含有するシード層と呼ばれる層が画定されるように、ドナー基板内に脆化領域を形成する工程と、
シード層が接合界面にあるようにレシーバ基板上にドナー基板を接合する工程と、
レシーバ基板上にシード層が移送されるように脆化領域に沿ってドナー基板を分離させる工程と、を含む。
本発明の別の目的は、以下の連続工程:
組成物A’B’O3圧電材料を含むドナー基板を提供する工程であって、
A’が、以下の元素Li、Na、K、Hのうちの1つ以上からなり、
B’が、以下の元素Nb、Ta、Sb、Vのうちの1つ以上からなる、提供工程と、
前記組成物A’’B’’O3の単結晶層を、圧電材料A’B’O3上にエピタキシャル成長させる工程であって、
A’’が、以下の元素Li、Na、K、Hのうちの1つ以上からなり、
B’’が、以下の元素Nb、Ta、Sb、Vのうちの1つ以上からなる、エピタキシャル成長工程と、
レシーバ基板を供給する工程と、
組成物A’’B’’O3のエピタキシャル層の少なくとも一部を、前記エピタキシャル層を通してレシーバ基板上にドナー基板を接合することにより、レシーバ基板に移送し、続いて、前記組成物A’’B’’O3のエピタキシャル層と同程度にドナー基板を薄層化する工程と、
を含むことを特徴とする、単結晶層の製造方法に関する。
A’’は、以下の元素Li、Na、K、Hのうちの1つ以上からなり、
B’’は、以下の元素Nb、Ta、Sb、Vのうちの1つ以上からなる。
本発明を実施するための一様式によれば、前記組成物A’’B’’O3のエピタキシャル層の少なくとも一部をレシーバ基板に移送する工程は、以下の工程:
ドナー基板内または組成物A’’B’’O3のエピタキシャル層内に、被移送層が画定されるように脆化領域を形成する工程と、
組成物A’’B’’O3のエピタキシャル層が接合界面にあるように、レシーバ基板上にドナー基板を接合する工程と、
脆化領域に沿ってドナー基板またはエピタキシャル層を分離させる工程と、
を含む。
A’’が、以下の元素Li、Na、K、Hのうちの1つ以上からなり、
B’’が、以下の元素Nb、Ta、Sb、Vのうちの1つ以上からなり、
A’’およびB’’のうちの少なくとも1つが、少なくとも2つの元素からなり、
支持基板と組成物A’’B’’O3の層との間に、組成物A’B’O3の層を含み、
A’がLi、Na、K、Hのうちの少なくとも1つの元素からなり、且つ
B’がNb、Ta、Sb、Vのうちの少なくとも1つの元素からなる、
ことを特徴とする。
一実装態様によれば、前記基板はまた、組成物A’’B’’O3の層上に組成物A’’’B’’’O3の単結晶層を更に含み、
A’’’は、以下の元素Li、Na、K、Hのうちの1つ以上からなり、
B’’’は、以下の元素Nb、Ta、Sb、Vのうちの1つ以上からなる。
本発明のもう1つの目的は、連続的または可変的に電場を印加することによって要素の変形または可動部の運動を引き起こすように設計されたマイクロアクチュエータであって、上述の方法によって得ることのできる単結晶圧電層を備えることを特徴とする、マイクロアクチュエータに関する。
層10は、以下:
シード層に対応するレシーバ基板110との界面にある第1の部分102と、
エピタキシャル層に対応する第1の部分102から延在し、組成物A’B’O3の材料から作製され、前記材料が少なくとも3成分でありうる第2の部分103と、を備える。
Claims (8)
- 単結晶層(10)の製造方法において、以下の連続工程:
組成物ABO3の圧電材料を含むドナー基板(100)を提供する工程であって、
Aが、Li、Na、K、Hのうちの少なくとも1つの元素からなり、
Bが、Nb、Ta、Sb、Vのうちの少なくとも1つの元素からなる、提供工程と、
レシーバ基板(110)を供給する工程と、
「シード層(102)」と呼ばれる層を前記ドナー基板(100)から前記レシーバ基板(110)上に移送する工程であって、前記シード層(102)が接合界面にあるように前記レシーバ基板(110)上に前記ドナー基板(100)を接合させ、続いて前記ドナー基板(100)を前記シード層(102)と同程度に薄層化することによる、前記移送工程と、
組成物A’B’O3の単結晶層(103)を、シード層(102)の圧電材料ABO3上で、エピタキシャル成長させる工程であって、
A’が、以下の元素Li、Na、K、Hのうちの少なくとも1種からなり、
B’が、以下の元素Nb、Ta、Sb、Vのうちの少なくとも1種からなり、
A’がAとは異なるか、またはB’がBとは異なる、エピタキシャル成長工程と、
を含むことを特徴とする、製造方法。 - A’がAと共通の少なくとも1つの元素を含み、および/または、B’がBと共通の少なくとも1つの元素を含むことを特徴とする、請求項1に記載の方法。
- B’がBとは異なる場合にA’がAと同一であり、およびA’がAとは異なる場合にB’がBと同一であることを特徴とする、請求項1に記載の方法。
- Aが単一の元素からなり、且つBが単一の元素からなる、請求項1〜3のいずれか一項に記載の方法。
- 前記シード層(102)の移送が、以下の工程:
前記組成物ABO3の圧電材料を含有する前記シード層と呼ばれる層が画定されるように、前記ドナー基板(100)内に脆化領域(101)を形成する工程と、
前記シード層(102)が接合界面にあるように、前記レシーバ基板(110)上に前記ドナー基板(100)を接合する工程と、
前記レシーバ基板(110)上に前記シード層(102)が移送されるように、前記脆化領域(101)に沿って前記ドナー基板(100)を分離させる工程と、
を含む、請求項1〜4のいずれか一項に記載の方法。 - 前記エピタキシャル成長工程前に、前記レシーバ基板(110)上に移送された前記シード層(102)の厚さの一部が除去される、請求項5に記載の方法。
- 前記シード層(102)の厚さが2μm未満である、請求項1〜6のいずれか一項に記載の方法。
- 前記レシーバ基板が半導体材料製であり、且つ前記シード層と前記レシーバ基板間に中間電荷捕捉層を挟持してなることを特徴とする、請求項1〜7のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1563055A FR3045677B1 (fr) | 2015-12-22 | 2015-12-22 | Procede de fabrication d'une couche monocristalline, notamment piezoelectrique |
FR1563055 | 2015-12-22 | ||
PCT/EP2016/082245 WO2017108994A1 (fr) | 2015-12-22 | 2016-12-21 | Procede de fabrication d'une couche monocristalline, notamment piezoelectrique |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019508924A JP2019508924A (ja) | 2019-03-28 |
JP6816147B2 true JP6816147B2 (ja) | 2021-01-20 |
Family
ID=55590008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018532582A Active JP6816147B2 (ja) | 2015-12-22 | 2016-12-21 | 単結晶層、特に圧電層の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US11101428B2 (ja) |
EP (1) | EP3394324A1 (ja) |
JP (1) | JP6816147B2 (ja) |
KR (1) | KR20180098343A (ja) |
CN (1) | CN108603305A (ja) |
FR (1) | FR3045677B1 (ja) |
SG (1) | SG11201805382SA (ja) |
WO (1) | WO2017108994A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180048283A1 (en) * | 2015-04-16 | 2018-02-15 | Shin-Etsu Chemical Co., Ltd. | Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate |
JP6654435B2 (ja) * | 2016-01-07 | 2020-02-26 | 株式会社ディスコ | ウエーハ生成方法 |
WO2018097660A1 (ko) | 2016-11-25 | 2018-05-31 | 주식회사 엘지화학 | 경화성 조성물 |
FR3073083B1 (fr) * | 2017-10-31 | 2019-10-11 | Soitec | Procede de fabrication d'un film sur un feuillet flexible |
CN113926680B (zh) * | 2021-09-01 | 2022-12-13 | 中国电子科技集团公司第三研究所 | 超声换能器、超声扫描显微镜以及超声换能器的制作方法 |
FR3131800B1 (fr) * | 2022-01-07 | 2024-03-22 | Soitec Silicon On Insulator | Procédé de traitement de substrats |
CN114774844A (zh) * | 2022-03-31 | 2022-07-22 | 清华大学 | 在原子级别调控薄膜平整表面成分的方法 |
FR3141308A1 (fr) * | 2022-10-20 | 2024-04-26 | Soitec | Procede de fabrication d’une couche piezoelectrique sur un substrat |
CN117156947B (zh) * | 2023-10-31 | 2024-02-20 | 北京青禾晶元半导体科技有限责任公司 | 一种复合压电衬底的制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4019200A (en) | 1975-06-11 | 1977-04-19 | Rockwell International Corporation | Monolithic surface acoustic wave signal storage device |
CN1048126C (zh) * | 1994-12-06 | 2000-01-05 | 株式会社村田制作所 | 表面声波器件的电极形成方法 |
US6120597A (en) * | 1998-02-17 | 2000-09-19 | The Trustees Of Columbia University In The City Of New York | Crystal ion-slicing of single-crystal films |
US6540827B1 (en) * | 1998-02-17 | 2003-04-01 | Trustees Of Columbia University In The City Of New York | Slicing of single-crystal films using ion implantation |
JP3704017B2 (ja) | 2000-03-28 | 2005-10-05 | ヤマハ株式会社 | 弾性表面波素子 |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6593212B1 (en) * | 2001-10-29 | 2003-07-15 | The United States Of America As Represented By The Secretary Of The Navy | Method for making electro-optical devices using a hydrogenion splitting technique |
US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
FR2847076B1 (fr) * | 2002-11-07 | 2005-02-18 | Soitec Silicon On Insulator | Procede de detachement d'une couche mince a temperature moderee apres co-implantation |
JP5201602B2 (ja) * | 2007-04-13 | 2013-06-05 | 国立大学法人京都大学 | 音源分離システム、音源分離方法及び音源分離用コンピュータプログラム |
KR101196990B1 (ko) | 2007-12-25 | 2012-11-05 | 가부시키가이샤 무라타 세이사쿠쇼 | 복합 압전 기판의 제조방법 |
US8115365B2 (en) * | 2008-04-15 | 2012-02-14 | Ngk Insulators, Ltd. | Surface acoustic wave devices |
FR2951336B1 (fr) | 2009-10-09 | 2017-02-10 | Commissariat A L'energie Atomique | Dispositif a ondes acoustiques comprenant un filtre a ondes de surface et un filtre a ondes de volume et procede de fabrication |
JP2012106902A (ja) * | 2010-10-25 | 2012-06-07 | Fujifilm Corp | ペロブスカイト型酸化物膜及びそれを用いた強誘電体膜、強誘電体素子、ペロブスカイト型酸化物膜の製造方法 |
WO2012128268A1 (ja) | 2011-03-22 | 2012-09-27 | 株式会社村田製作所 | 圧電デバイス、圧電デバイスの製造方法 |
CN102253451B (zh) * | 2011-05-13 | 2013-03-20 | 华中科技大学 | 一种铌酸锂光波导的制备方法 |
JP5835329B2 (ja) * | 2011-07-29 | 2015-12-24 | 株式会社村田製作所 | 圧電デバイス、および、圧電デバイスの製造方法 |
FR2995136B1 (fr) | 2012-09-04 | 2015-06-26 | Soitec Silicon On Insulator | Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin |
-
2015
- 2015-12-22 FR FR1563055A patent/FR3045677B1/fr active Active
-
2016
- 2016-12-21 US US16/064,416 patent/US11101428B2/en active Active
- 2016-12-21 JP JP2018532582A patent/JP6816147B2/ja active Active
- 2016-12-21 CN CN201680080405.8A patent/CN108603305A/zh active Pending
- 2016-12-21 SG SG11201805382SA patent/SG11201805382SA/en unknown
- 2016-12-21 WO PCT/EP2016/082245 patent/WO2017108994A1/fr active Application Filing
- 2016-12-21 EP EP16819558.4A patent/EP3394324A1/fr active Pending
- 2016-12-21 KR KR1020187021267A patent/KR20180098343A/ko not_active Application Discontinuation
-
2021
- 2021-08-06 US US17/396,374 patent/US20210367139A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3394324A1 (fr) | 2018-10-31 |
FR3045677A1 (fr) | 2017-06-23 |
CN108603305A (zh) | 2018-09-28 |
SG11201805382SA (en) | 2018-07-30 |
US20210367139A1 (en) | 2021-11-25 |
FR3045677B1 (fr) | 2019-07-19 |
US20180375014A1 (en) | 2018-12-27 |
US11101428B2 (en) | 2021-08-24 |
KR20180098343A (ko) | 2018-09-03 |
JP2019508924A (ja) | 2019-03-28 |
WO2017108994A1 (fr) | 2017-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6816147B2 (ja) | 単結晶層、特に圧電層の製造方法 | |
JP6812443B2 (ja) | 単結晶圧電層、およびそのような層を含むマイクロエレクトロニクスデバイス、光子デバイスまたは光学デバイスの作製方法 | |
US11705880B2 (en) | Process for producing a micro-electro-mechanical system from a transferred piezoelectric or ferroelectric layer | |
KR102444516B1 (ko) | 복합 기판 및 복합 기판의 제조 방법 | |
KR102133336B1 (ko) | 복합 기판, 그 제법 및 탄성파 디바이스 | |
CN108475722B (zh) | 用于温度补偿表面声波器件或体声波器件的衬底 | |
US20130130502A1 (en) | Micromechanical membranes and related structures and methods | |
Reinhardt et al. | Acoustic filters based on thin single crystal LiNbO 3 films: status and prospects | |
CN116323471A (zh) | 用于转移膜的方法 | |
JP2006298694A (ja) | 圧電複合基板及びその製造方法 | |
JP7066638B2 (ja) | 注入後の基板からの分離により得られる層中の欠陥の修復方法 | |
JP6929880B2 (ja) | 層を製造するための方法 | |
KR20230086718A (ko) | 변형 가능한 층과 압전층을 포함하는 mems 애플리케이션용 복합 구조체 및 관련 제조 방법 | |
CN116261928A (zh) | 用于沉积压电材料的方法以及用其沉积的材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191119 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200730 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200811 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201001 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201020 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201030 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6816147 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |