JP6809223B2 - 整流素子、その製造方法および無線通信装置 - Google Patents
整流素子、その製造方法および無線通信装置 Download PDFInfo
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- JP6809223B2 JP6809223B2 JP2016518780A JP2016518780A JP6809223B2 JP 6809223 B2 JP6809223 B2 JP 6809223B2 JP 2016518780 A JP2016518780 A JP 2016518780A JP 2016518780 A JP2016518780 A JP 2016518780A JP 6809223 B2 JP6809223 B2 JP 6809223B2
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Description
本発明の整流素子は、絶縁性基材と、前記絶縁性基材の第1表面に設けられた(a)第一の電極と第二の電極からなる一対の電極と、前記(a)一対の電極間に設けられた(b)半導体層を備える整流素子であって、前記(b)半導体層が、カーボンナノチューブ(以下、CNTと呼ぶ)の表面の少なくとも一部に共役系重合体が付着したカーボンナノチューブ複合体(以下、CNT複合体と呼ぶ)を含むものである。ここで、絶縁性基材の第1表面とは、絶縁性基材のいずれか一方の表面のことである。
絶縁性基材は、少なくとも電極が配置される面が絶縁性であればいかなる材質のものでもよい。例えば、ガラス、サファイア、アルミナ焼結体、シリコンウエハの表面を酸化膜被覆したもの等の無機材料;ポリエチレンテレフタレート、ポリイミド、ポリエステル、ポリカーボネート、ポリスルホン、ポリエーテルスルホン、ポリエチレン、ポリフェニレンスルフィド、ポリパラキシレン等の有機材料などの平滑な基材が好適に用いられる。
一対の電極および第三の電極に用いられる材料は、電極として使用されうる導電材料であればいかなるものでもよい。具体的には、例えば、酸化錫、酸化インジウム、酸化錫インジウム(ITO)などの導電性金属酸化物;白金、金、銀、銅、鉄、錫、亜鉛、アルミニウム、インジウム、クロム、リチウム、ナトリウム、カリウム、セシウム、カルシウム、マグネシウム、パラジウム、モリブデン、アモルファスシリコンやポリシリコンなどの金属やこれらの合金;ヨウ化銅、硫化銅などの無機導電性化合物;ポリチオフェン、ポリピロール、ポリアニリン、ポリエチレンジオキシチオフェンとポリスチレンスルホン酸の錯体などの導電性ポリマーなどが挙げられるが、これらに限定されるものではない。導電性ポリマーは、ヨウ素などのドーピングなどで導電率を向上させることが好ましい。これらの電極材料は、単独で用いてもよいし、複数の材料を積層または混合して用いてもよい。
絶縁層5に用いられる材料は、特に限定されないが、酸化シリコン、アルミナ等の無機材料;ポリイミド、ポリビニルアルコール、ポリビニルクロライド、ポリエチレンテレフタレート、ポリフッ化ビニリデン、ポリシロキサン、ポリビニルフェノール(PVP)等の有機高材料;あるいは無機材料粉末と有機材料の混合物を挙げることができる。中でもケイ素と炭素の結合を含む有機化合物と、金属原子および酸素原子の結合を含む金属化合物を含むものが好ましい。有機化合物としては、下記一般式(2)で表されるシラン化合物、下記一般式(3)で表されるエポキシ基含有シラン化合物、またはこれらの縮合物、またはこれらを重合成分として含むポリシロキサン等が挙げられる。これらの中でもポリシロキサンは絶縁性が高く、低温硬化が可能であるためより好ましい。
ここで、R7は水素、アルキル基、複素環基、アリール基またはアルケニル基を示す。R7が複数存在する場合、それぞれのR7は同じでも異なっていてもよい。R8は水素、アルキル基、アシル基またはアリール基を示す。R8が複数存在する場合、それぞれのR8は同じでも異なっていてもよい。mは1〜3の整数を示す。
ここで、R9は1つ以上のエポキシ基を鎖の一部に有するアルキル基を示す。R9が複数存在する場合、それぞれのR9は同じでも異なっていてもよい。R10は水素、アルキル基、複素環基、アリール基またはアルケニル基を示す。R10が複数存在する場合、それぞれのR10は同じでも異なっていてもよい。R11は水素、アルキル基、アシル基またはアリール基を示す。R11が複数存在する場合、それぞれのR11は同じでも異なっていてもよい。lは0〜2の整数、nは1または2を示す。ただし、l+n≦3である。
R12 xM(OR13)y−x (4)
ここで、R12は1価の2座配位子を示す。R12が複数存在する場合、それぞれのR12は同じでも異なっていてもよい。R13は水素、アルキル基、アシル基またはアリール基を示す。R13が複数存在する場合、それぞれのR13は同じでも異なっていてもよい。Mはy価の金属原子を示す。yは1〜6である。xは1〜yの整数を示す。
ここで、R12は一般式(4)におけるものと同じであり、それぞれのR12は同じでも異なっていてもよい。
CNT複合体は、CNTの表面の少なくとも一部に共役系重合体が付着したものである。ここで、共役系重合体とは、繰り返し単位が共役構造をとり、重合度が2以上の化合物を指す。CNTの表面の少なくとも一部に共役系重合体が付着した状態とは、CNTの表面の一部、あるいは全部を共役系重合体が被覆した状態を意味する。共役系重合体がCNTを被覆できるのは、両者の共役系構造に由来するπ電子雲が重なることによって相互作用が生じるためと推測される。CNTが共役系重合体で被覆されているか否かは、被覆されたCNTの反射色が被覆されていないCNTの色から共役系重合体の色に近づくことで判断できる。定量的にはX線光電子分光(XPS)などの元素分析によって、付着物の存在とCNTに対する付着物の質量比を同定することができる。
半導体層4は、上記CNT複合体を含有する。半導体層4はCNT複合体の電気特性を阻害しない範囲であれば、さらに有機半導体や絶縁材料を含んでもよい。また半導体層4中の1μm2当たりに存在する上記CNT複合体の総長さが10μm〜50μmであることが好ましい。総長さがこの範囲内であると、整流素子の整流特性が高くなり、かつ、順方向抵抗が低くなるので好ましい。半導体層4中の1μm2当たりに存在する上記CNT複合体の総長さとは、半導体層4中の任意の1μm2内に存在するCNT複合体の長さの総和を言う。CNT複合体の総長さの測定方法としては、原子間力顕微鏡、走査型電子顕微鏡、透過型電子顕微鏡等で得た半導体層の画像の中から任意の1μm2を選択し、その領域に含まれる全てのCNT複合体の長さを測定して合計する方法が挙げられる。
次に、本発明の整流素子を含有する無線通信装置について説明する。この無線通信装置は、例えばRFIDのような、外部のリーダ/ライタに搭載されたアンテナから送信される搬送波をRFIDタグが受信することで電気通信を行う装置である。
次に、本発明の無線通信装置を含有する商品タグについて説明する。この商品タグは、例えば基体と、この基体によって被覆された上記無線通信装置を有している。
ポリマーの重量平均分子量は、サンプル溶液を孔径0.45μmメンブレンフィルターで濾過後、GPC(GEL PERMEATION CHROMATOGRAPHY:ゲル浸透クロマトグラフィー、東ソー(株)製HLC−8220GPC)(展開溶剤:テトラヒドロフラン、展開速度:0.4ml/分)を用いて測定し、ポリスチレン標準試料との比較により、ポリスチレン換算の重量平均分子量を求めた。
図6、7を参照して説明する。相補型半導体装置を形成した基板1001について、相補型半導体装置を形成した面上の中央部に直径30mmの金属円柱1000を固定し、この円柱に沿って、円柱の抱き角0°(サンプルが平面の状態)の状態に置き(図6参照)、円柱への抱き角が180°(円柱で折り返した状態)となるまで(図7参照)、折り曲げ動作を行った。耐屈曲性は、曲げ動作前後の相補型半導体装置パターンを光学顕微鏡で観察し、剥がれ、欠けの有無を確認した。
半導体層4中の任意の1μm2を、透過型電子顕微鏡を用いて倍率150万倍で観察し、その領域に含まれる全てのCNT複合体の長さを測定して、総長さを求めた。
共重合比率(質量基準):エチルアクリレート(以下、「EA」)/メタクリル酸2−エチルヘキシル(以下、「2−EHMA」)/スチレン(以下、「St」)/グリシジルメタクリレート(以下、「GMA」)/アクリル酸(以下、「AA」)=20/40/20/5/15。
共重合比率(質量基準):2官能エポキシアクリレートモノマー(エポキシエステル3002A;共栄社化学(株)製)/2官能エポキシアクリレートモノマー(エポキシエステル70PA;共栄社化学(株)製)/GMA/St/AA=20/40/5/20/15。
化合物P2のウレタン変性化合物
窒素雰囲気の反応容器中に、100gのジエチレングリコールモノエチルエーテルアセテート(以下、「DMEA」)を仕込み、オイルバスを用いて80℃まで昇温した。これに、感光性成分P2を10g、3.5gのn−ヘキシルイソシアネートおよび10gのDMEAからなる混合物を、1時間かけて滴下した。滴下終了後、さらに3時間反応を行った。得られた反応溶液をメタノールで精製することで未反応不純物を除去し、さらに24時間真空乾燥することで、ウレタン結合を有する化合物P3を得た。
100mlクリーンボトルに、上記により得られた化合物P1を16g、化合物P3を4g、光重合開始剤OXE−01(BASFジャパン株式会社製)4g、酸発生剤SI−110(三新化学工業株式会社製)を0.6g、γ−ブチロラクトン(三菱ガス化学株式会社製)を10g入れ、自転−公転真空ミキサー“あわとり練太郎”(登録商標)(ARE−310;(株)シンキー製)で混合し、感光性樹脂溶液46.6g(固形分78.5質量%)を得た。得られた感光性樹脂溶液8.0gと平均粒子径0.2μmのAg粒子42.0gを混ぜ合わせ、3本ローラー“EXAKT M−50”(商品名、EXAKT社製)を用いて混練し、50gの導電ペーストAを得た。
(1)半導体溶液の作製
ポリ(3−ヘキシルチオフェン)(P3HT)(アルドリッチ(株)製)2.0mgのクロロホルム10ml溶液にCNT1(CNI社製、単層CNT、純度95%)を1.0mg加え、氷冷しながら超音波ホモジナイザー(東京理化器械(株)製VCX−500)を用いて出力20%で4時間超音波撹拌し、CNT複合体分散液A(溶媒に対するCNT複合体濃度0.96g/l)を得た。
図1に示す整流素子を作製した。ガラス製の基板1(膜厚0.7mm)上に、抵抗加熱法により、マスクを通してクロムを5nmの厚さおよび金を50nmの厚さで真空蒸着し、第一の電極2を形成した。次に同様に抵抗加熱法により、マスクを通してアルミニウムを50nmの厚さで真空蒸着し、第二の電極3を形成した。
次に、上記整流素子の電流−電圧特性を測定した。測定には半導体特性評価システム4200−SCS型(ケースレーインスツルメンツ(株)製)を用い、2端子法で行った。測定は、大気中(気温20℃、湿度35%)で実施し、整流作用が得られることを確認した。また2Vの電圧印加時に整流素子に流れる電流値は10μAであった。
(1)絶縁層溶液の作製
メチルトリメトキシシラン61.29g(0.45モル)、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン12.31g(0.05モル)、およびフェニルトリメトキシシラン99.15g(0.5モル)をプロピレングリコールモノブチルエーテル(沸点170℃)203.36gに溶解し、これに、水54.90g、リン酸0.864gを撹拌しながら加えた。得られた溶液をバス温105℃で2時間加熱し、内温を90℃まで上げて、主として副生するメタノールからなる成分を留出せしめた。次いでバス温130℃で2.0時間加熱し、内温を118℃まで上げて、主として水とプロピレングリコールモノブチルエーテルからなる成分を留出せしめた後、室温まで冷却し、固形分濃度26.0質量%の絶縁層溶液Aを得た。
図3に示す整流素子を作製した。ガラス製の基板1(膜厚0.7mm)上に、抵抗加熱法により、マスクを通してクロムを5nmの厚さおよび金を50nmの厚さで真空蒸着し、電極6を形成した。次に上記(1)に記載の方法で作製した絶縁層溶液Bを上記電極6が形成されたガラス基板上にスピンコート塗布(800rpm×20秒)し、120℃で5分間熱処理後、再度絶縁層溶液Bをスピンコート塗布(800rpm×20秒)し、窒素気流下200℃で30分間熱処理することによって、膜厚400nmの絶縁層5を形成した。絶縁層5の上に、抵抗加熱法により、金を膜厚50nmになるように真空蒸着し、その上にフォトレジスト(商品名「LC100−10cP」、ローム・アンド・ハース(株)製)をスピンコート塗布(1000rpm×20秒)し、100℃で10分間加熱乾燥した。
次に、上記整流素子の電流−電圧特性を測定した。電極3および電極6を金線で電気的に接続し、電極2を入力、電極3および電極6を出力とする2端子法で測定した。測定は、大気中(気温20℃、湿度35%)で実施し、整流作用が得られることを確認した。
(1)整流素子の作製
半導体溶液Aを50pl滴下して半導体層4を形成したこと以外は実施例2と同様に整流素子を作製した。半導体層4中の1μm2当たりに存在するCNT複合体の総長さは5μmであった。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値1.8[V]、ばらつき0.9[V]であった。
(1)整流素子の作製
半導体溶液Aを5000pl滴下して半導体層4を形成したこと以外は実施例2と同様に整流素子を作製した。半導体層4中の1μm2当たりに存在するCNT複合体の総長さは100μmであった。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値1.5[V]、ばらつき0.3[V]であった。
(1)絶縁層溶液の作製
絶縁層溶液Aを10g量り取り、アルミニウムビス(エチルアセチルアセテート)モノ(2,4−ペンタンジオナート)(商品名「アルミキレートD」、川研ファインケミカル(株)製、以下アルミキレートDという)13gとプロピレングリコールモノエチルエーテルアセテート(以下、PGMEAという)42gを混合して、室温にて2時間撹拌し、絶縁層溶液C(固形分濃度24質量%)を得た。本溶液中の上記ポリシロキサンの含有量はアルミキレートD 100質量部に対して20質量部であった。
絶縁層溶液Bの代わりに、絶縁層溶液Cを用いたこと以外は実施例2と同様に整流素子を作製した。このときの絶縁層をX線光電子分光法により分析したところ、炭素原子とケイ素原子の合計100重量部に対してアルミニウム原子が21.0重量部であった。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値4.5[V]、ばらつき0.3[V]であった。
(1)半導体溶液の作製
化合物[60]を式1に示す方法で合成した。
1H−NMR(CD2Cl2,(d=ppm)):8.00(s,2H),7.84(s,2H),7.20―7.15(m,8H),7.04(d,2H),6.95(d,2H),2.88(t,4H),2.79(t,4H),1.77−1.29(m,48H),0.88(m,12H)。
半導体溶液Aの代わりに、半導体溶液Bを用いたこと以外は実施例5と同様に整流素子を作製した。半導体層4中の1μm2当たりに存在するCNT複合体の総長さは30μmであった。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値4.9[V]、ばらつき0.3[V]であった。
(1)整流素子の作製
実施例6と同様に作製した整流素子の半導体層4上に、ポリビニルフェノール(アルドリッチ社製、重量平均分子量(Mw):20000、以下PVPという)の5質量%ブタノール溶液を10μLドロップキャストし、第2の絶縁層を形成した。続いて、30℃で5分風乾した後、ホットプレート上で窒素気流下、120℃、30分の熱処理を行い、第2の絶縁層を有する整流素子を作製した。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値3.8[V]、ばらつき0.4[V]であった。また、1ヶ月後に同様の測定をしても、測定結果は同等であった。
(1)整流素子の作製
ポリ(メチルメタクリレート)(アルドリッチ社製、重量平均分子量(Mw):350000、以下PMMAという)の5質量%メチルエチルケトン溶液を用いて、実施例7と同様に第2の絶縁層を形成したこと以外は、実施例7と同様にして整流素子を作製した。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値5.0[V]、ばらつき0.3[V]であった。また、1ヶ月後に同様の測定をしても、測定結果は同等であった。
(1)整流素子の作製
ポリスチレン(アルドリッチ社製、重量平均分子量(Mw):192000、以下PSという)の5質量%プロピレングリコール1−モノメチルエーテル2−アセタート溶液を用いて、実施例7と同様に第2の絶縁層を形成したこと以外は、実施例7と同様にして整流素子を作製した。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値5.3[V]、ばらつき0.3[V]であった。また、1ヶ月後に同様の測定をしても、測定結果は同等であった。
(1)整流素子の作製
絶縁層溶液Bを用いて、実施例7と同様に第2の絶縁層を形成したこと以外は、実施例7と同様にして整流素子を作製した。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値4.6[V]、ばらつき0.3[V]であった。また、1ヶ月後に同様の測定をしても、測定結果は同等であった。
(1)整流素子の作製
膜厚50μmのPETフィルム上に、前記導電ペーストAをスクリーン印刷で塗布し、乾燥オーブンで100℃、10分間プリベークを行った。その後、露光装置“PEM−8M”(商品名、ユニオン光学(株)製)を用いて露光した後、0.5%Na-2CO-3溶液で30秒間浸漬現像し、超純水でリンス後、乾燥オーブンで140℃、30分間キュアを行い、電極6を形成した。次に絶縁層溶液Cを上記電極6が形成されたPETフィルム上基板上にスピンコート塗布(800rpm×20秒)し、120℃で5分間熱処理後、再度絶縁層溶液Cをスピンコート塗布(800rpm×20秒)し、窒素気流下200℃で30分間熱処理することによって、絶縁層5を形成した。絶縁層5の上に、前記導電ペーストAをスクリーン印刷で塗布し、乾燥オーブンで100℃、10分間プリベークを行った。その後、露光装置“PEM−8M”を用いて露光した後、0.5%Na-2CO-3溶液で30秒間浸漬現像し、超純水でリンス後、乾燥オーブンで140℃、30分間キュアを行い、第一の電極2および第二の電極3を形成した。これら一対の電極2および3の幅はいずれも1000μmであり、電極間の距離は10μmであった。電極が形成された基板上に、実施例2と同様にして半導体層4を形成し、ホットプレート上で窒素気流下、150℃で30分の熱処理を行い、図3の態様の整流素子を得た。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。入力端子101に交流電圧(電圧振幅10[V])を入力した際、出力端子103に出力された直流電圧は、平均値4.5[V]、ばらつき0.3[V]であった。また、1ヶ月後に同様の測定をしても、測定結果は同等であった。
(1)半導体溶液の作製
CNT1を1.0g、クロロホルム50mLに加え、超音波洗浄機を用いて1時間分散した。さらにこの分散液5mLを分取し100mLに希釈してさらに超音波洗浄機を用いて1時間分散し、CNT分散液Cを得た。得られたCNT分散液Cをメンブレンフィルター(孔径10μm、直径25mm、ミリポア社製オムニポアメンブレン)を用いて濾過を行い、長さ10μm以上のCNTを除去し、半導体溶液Cを得たが、一部CNTが凝集したままであった。
半導体溶液Aの代わりに半導体溶液Cを用いたこと以外は、実施例1と同様に整流素子を作製した。
上記で作製した整流素子を評価するため実施例1と同様にして電流−電圧特性を測定し整流作用が得られることを確認したが、2Vの電圧印加時に整流素子に流れる電流値は1pAであった。
(1)整流素子の作製
比較例1と同様にして、半導体溶液Cを作製した。半導体溶液Aの代わりに半導体溶液Cを用いたこと以外は、実施例5と同様に整流素子を作製した。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。交流電圧(電圧振幅10[V])を入力したが、直流電圧の出力は得られなかった。
(1)半導体溶液の作製
CNT1を1.5mgと、ドデシル硫酸ナトリウム((株)和光純薬工業製)1.5mgを30mlの水中に加え、氷冷しながら超音波ホモジナイザーを用いて出力250Wで3時間超音波撹拌し、CNT複合体分散液D(溶媒に対するCNT複合体濃度0.05g/l)を得た。得られたCNT複合体分散液Dを遠心分離機(日立工機(株)製CT15E)を用いて、21000Gで30分間遠心分離した後、上澄みの80体積%を取り出すことにより半導体溶液Dを得た。
半導体溶液Aの代わりに半導体溶液Dを用いたこと以外は、実施例5と同様に整流素子を作製した。
上記で作製した整流素子を評価するため実施例2と同様にして整流回路を構成した。交流電圧(電圧振幅10[V])を入力したが、出力端子103に出力された電圧は、平均値2.0[V]、ばらつき2.0[V]であり、安定した直流電圧が得られなかった。
2 第一の電極
3 第二の電極
4 半導体層
5 絶縁層
6 第三の電極
7 配線
100 整流素子
101 入力端子
102 キャパシタ
103 出力端子
50 アンテナ
500 整流回路(電源生成部)
501 復調回路
502 変調回路
503 制御回路
504 記憶回路
Claims (14)
- 絶縁性基材と、前記絶縁性基材の第1表面に設けられた、(a)第一の電極と第二の電極からなる一対の電極と、(b)前記一対の電極間に設けられた半導体層とを備える整流素子であって、前記(b)半導体層が、カーボンナノチューブ表面の少なくとも一部に共役系重合体が付着したカーボンナノチューブ複合体を含み、前記半導体層1μm2当たりに存在する前記CNT複合体の総長さが10μm〜50μmである、整流素子。
- 絶縁性基材と、前記絶縁性基材の第1表面に、(a)第一の電極と第二の電極からなる一対の電極と、前記(a)一対の電極間に設けられた(b)半導体層と、(c)絶縁層と、(d)第三の電極とを備えた整流素子であって、前記(a)一対の電極のいずれか一方と前記(d)第三の電極が電気的に接続され、前記(d)第三の電極は前記(c)絶縁層により前記(b)半導体層と電気的に絶縁されている請求項1記載の整流素子。
- 前記(a)一対の電極間の間隔が1μm以上100μm以下である請求項1または2記載の整流素子。
- 前記共役系重合体が、環中に含窒素二重結合を有する縮合へテロアリールユニットとチオフェンユニットを繰り返し単位中に含む請求項1〜3のいずれか記載の整流素子。
- 前記共役系重合体が一般式(1)で表される構造を有する請求項1〜4いずれか記載の整流素子:
- 前記(c)絶縁層が、ケイ素と炭素の結合を含む有機化合物と、金属原子および酸素原子の結合を含む金属化合物を含み、前記(c)絶縁層は、炭素原子とケイ素原子の合計100質量部に対して前記金属原子が10〜180質量部含まれる請求項2記載の整流素子。
- 前記半導体層に対して前記(c)絶縁層と反対側に形成された第2の絶縁層を有する請求項2または6記載の整流素子。
- 前記第2の絶縁層がポリシロキサン、ポリスチレン、ポリビニルフェノールおよびポリメチルメタクリレートからなる群より選ばれた有機高分子材料を含有する請求項7記載の整流素子。
- 絶縁性基材と、前記絶縁性基材の第1表面に設けられた、(a)第一の電極と第二の電極からなる一対の電極と、(b)前記一対の電極間に設けられた半導体層とを備える整流素子であって、前記(b)半導体層がカーボンナノチューブを含み、前記(b)半導体層1μm2当たりに存在する前記カーボンナノチューブの総長さが10μm〜50μmである整流素子。
- 絶縁性基材と、前記絶縁性基材の第1表面に、(a)第一の電極と第二の電極からなる一対の電極と、前記(a)一対の電極間に設けられた(b)半導体層と、(c)絶縁層と、(d)第三の電極とを備えた整流素子であって、前記(a)一対の電極のいずれか一方と前記(d)第三の電極が電気的に接続され、前記(d)第三の電極は前記(c)絶縁層により前記(b)半導体層と電気的に絶縁されている請求項9記載の整流素子。
- 請求項1〜10いずれか記載の整流素子の製造方法であって、カーボンナノチューブ表面の少なくとも一部に共役系重合体が付着したカーボンナノチューブ複合体を含有する組成物を基材上に塗布することにより半導体層を形成する工程を含む整流素子の製造方法。
- 請求項1〜10いずれか記載の整流素子と、コンデンサとを少なくとも有する整流回路。
- 請求項12記載の整流回路と、アンテナとを少なくとも有する無線通信装置。
- 請求項13記載の無線通信装置を用いた商品タグ。
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