JP6808701B2 - トランジスタ、半導体素子及びメモリ素子の形成方法 - Google Patents
トランジスタ、半導体素子及びメモリ素子の形成方法 Download PDFInfo
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- JP6808701B2 JP6808701B2 JP2018198364A JP2018198364A JP6808701B2 JP 6808701 B2 JP6808701 B2 JP 6808701B2 JP 2018198364 A JP2018198364 A JP 2018198364A JP 2018198364 A JP2018198364 A JP 2018198364A JP 6808701 B2 JP6808701 B2 JP 6808701B2
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- 230000015654 memory Effects 0.000 title claims description 108
- 238000000034 method Methods 0.000 title claims description 51
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000002955 isolation Methods 0.000 claims description 115
- 239000000758 substrate Substances 0.000 claims description 91
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 79
- 229920005591 polysilicon Polymers 0.000 claims description 79
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 66
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 66
- 239000002019 doping agent Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 371
- 230000005669 field effect Effects 0.000 description 78
- 230000008569 process Effects 0.000 description 37
- 239000000463 material Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 229910052726 zirconium Inorganic materials 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910015802 BaSr Inorganic materials 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 4
- 229910020684 PbZr Inorganic materials 0.000 description 4
- 229910004541 SiN Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000009969 flowable effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical class [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000136406 Comones Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
Classifications
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7846—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the lateral device isolation region, e.g. STI
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
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- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
(発明の効果)
10、202 基板
20 誘電体層
100 メモリユニットアレイ
120 メモリユニットストリング
140 メモリユニットブロック
200 不揮発性メモリ素子
220、350 垂直チャンネル
222 ゲート誘電体層
226 ライナー層
228、230 隔離層
232 埋め込み部
234 接続部
236 凸面
238 凹面
240、242 側
310 アース線
319 第1のポリシリコン層
320 第2のポリシリコン層
322 第1のゲート誘電体層
324 グラウンド選択ライン
326 第1のライナー層
328、330 シャロートレンチ隔離層
332、432、532 窒化シリコン層
334、434、534 第3のポリシリコン層
335 ハードシールド層
336 第2のライナー層
338 第1のディープトレンチ隔離層
346 第2のディープトレンチ隔離層
340、440、540 第4のポリシリコン層
342 第2のゲート誘電体層
344、444、544 導電層
345 キャラクターライン
351 側壁
351p ピーク
351t ボトム
353 基板注入領域
355 ソース/ドレイン領域
357 チャンネル領域
360 ファン構造電界効果トランジスタユニット
370 第1のユニット
380 第2のユニット
602、604 隔離層
T0、T1、T2 トレンチ
R1 ノッチ
S/D ソース/ドレイン領域
C チャンネル領域
G ゲート
M1〜Mn メモリユニット
WL、W1〜Wn、w0〜w5 キャラクターライン
BL、B1〜Bm、b1〜B12 ビットライン
SGL、s1〜s4 選択ゲート線
CR ユニット領域
M1、M2 金属層
PR1、PR2 周辺領域
MCS メモリユニットストリング
SST ストリング選択トランジスタ
GST グラウンド選択トランジスタ
CSL 共通ソースライン
SSL ストリング選択ライン
GSL グラウンド選択ライン
CCV カスケードコンタクトビア
Claims (19)
- 複数のソース/ドレイン領域及びチャンネル領域を有し、前記チャンネル領域が前記ソース/ドレイン領域の間に位置する基板であって、基板は、第1の表面と第2の表面とを含み、第2の表面は、第1の表面の一側から第1の表面の他側へ接続され、第2の表面の長さは、第1の表面の長さより大きく、チャンネル領域は、第1の表面上に配置される、前記基板と、
ゲートと、
前記ゲートと前記基板との間に位置するゲート誘電体層と、
を含み、
また、上面図において、前記基板が前記ゲート誘電体層から離れる方向へ次第に小さくなり、
前記ゲートは、前記ゲート誘電体層内に嵌設される、
トランジスタ。 - 前記ゲート誘電体層、前記基板及び前記ゲートは、上面図において半楕円形の輪郭を形成する、請求項1に記載のトランジスタ。
- 前記ゲート誘電体層は、前記基板内に嵌設される、請求項1または2に記載のトランジスタ。
- 前記ゲートは、前記ゲート誘電体層と接触する凸面を含む、請求項1〜3の何れか1項に記載のトランジスタ。
- 前記基板は、前記ゲート誘電体層と接触する凹面を含む、請求項1〜4の何れか1項に記載のトランジスタ。
- 前記ゲート及び前記基板は、それぞれ凸面及び凹面を含み、且つ前記ゲート誘電体層が前記凸面及び前記凹面の間に位置する、請求項1〜3の何れか1項に記載のトランジスタ。
- 第1の隔離層を更に含み、前記基板が前記第1の隔離層内に嵌設され、前記第1の隔離層が上面図において蛇行状形状を有する、請求項1〜6の何れか1項に記載のトランジスタ。
- 第2の隔離層を更に含み、前記ゲートが前記第2の隔離層及び前記ゲート誘電体層の間に位置し、且つ上面図において、前記第2の隔離層が前記第1の隔離層と異なる形を有する、請求項7に記載のトランジスタ。
- 前記第2の隔離層は、上面図においてストリップ形状を有する、請求項8に記載のトランジスタ。
- 複数の第1の側と複数の第2の側を有し、且つ前記第1の側及び前記第2の側が上面図において非対称となる第1の隔離層と、
それぞれ前記第1の隔離層における非対称となる前記第1の側及び前記第2の側に嵌設され、各々が水平に順に配列されるゲート、ゲート誘電体層及びドープトシリコン基板を含む複数のトランジスタと、
を備え、
前記ゲートは、前記ゲート誘電体層内に嵌設され、
ドープトシリコン基板は、第1の表面と第2の表面とを含み、第2の表面は、第1の表面の一側から第1の表面の他側へ接続され、第2の表面の長さは、第1の表面の長さより大きく、ドープトシリコン基板のチャンネル領域は、第1の表面上に配置される、
半導体素子。 - 前記第1の隔離層は、上面図において蛇行状形状を有する、請求項10に記載の半導体素子。
- 複数の第2の隔離層を更に含み、上面図において、前記第1の隔離層が前記第2の隔離層の間に位置し、且つ前記第2の隔離層が上面図において前記第1の隔離層と異なる形を有する、請求項10又は11に記載の半導体素子。
- 前記第2の隔離層の各々は、上面図においてストリップ形状を有する、請求項12に記載の半導体素子。
- 前記トランジスタの各々は、上面図において半楕円形状を有する、請求項10〜13の何れか1項に記載の半導体素子。
- 前記第1の隔離層の前記第1の側に複数の第1のノッチを有し、前記トランジスタの第1組が前記第1のノッチに位置し、前記第1の隔離層の前記第2の側に複数の第2のノッチを有し、前記トランジスタの第2組が前記第2のノッチに位置し、且つ上面図において、前記第1のノッチと前記第2のノッチが非対称となるように配列される、請求項10〜14の何れか1項に記載の半導体素子。
- 前記トランジスタの各々の前記ドープトシリコン基板は、複数のソース/ドレイン領域を含み且つ垂直に配列される、請求項10〜15の何れか1項に記載の半導体素子。
- 複数の窒化シリコン層及び複数のポリシリコン層が交互に配置されたスタックを形成することと、
前記窒化シリコン層及び前記ポリシリコン層の前記スタックに位置する蛇行状トレンチをエッチングすることと、
前記蛇行状トレンチに第1の隔離層を形成することと、
前記窒化シリコン層の1層を取り除いて、前記ポリシリコン層の隣接する両層にノッチを形成することと、
前記ノッチにポリシリコン層を入れ、該ポリシリコン層はその中に不純物ドーパントを含むことと、
前記ノッチにポリシリコン層を入れた後、前記ノッチに順にゲート誘電体層及び導電層を形成することと、
を含む、メモリ素子の形成方法。 - 前記窒化シリコン層及び前記ポリシリコン層の前記スタックに位置するストリップ形トレンチをエッチングすることと、
前記ゲート誘電体層及び前記導電層を形成した後で、第2の隔離層を前記ストリップ形トレンチに形成することと、
を更に含む、請求項17に記載のメモリ素子の形成方法。 - 上面図において、前記導電層の第1の部分及び前記導電層の第2の部分が前記ポリシリコン層を囲むように前記導電層が形成され、且つ前記第1の隔離層が前記導電層の前記第1の部分及び前記第2の部分の間に位置する、請求項17又は18に記載のメモリ素子の形成方法。
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