JP6808566B2 - マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 - Google Patents

マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 Download PDF

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Publication number
JP6808566B2
JP6808566B2 JP2017077200A JP2017077200A JP6808566B2 JP 6808566 B2 JP6808566 B2 JP 6808566B2 JP 2017077200 A JP2017077200 A JP 2017077200A JP 2017077200 A JP2017077200 A JP 2017077200A JP 6808566 B2 JP6808566 B2 JP 6808566B2
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Japan
Prior art keywords
film
pattern
mask
etching
etching stopper
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JP2017077200A
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English (en)
Japanese (ja)
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JP2018180170A5 (https=
JP2018180170A (ja
Inventor
亮 大久保
亮 大久保
博明 宍戸
博明 宍戸
崇 打田
崇 打田
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Hoya Corp
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Hoya Corp
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Priority to JP2017077200A priority Critical patent/JP6808566B2/ja
Priority to SG11201909351R priority patent/SG11201909351RA/en
Priority to SG10202112818PA priority patent/SG10202112818PA/en
Priority to PCT/JP2018/014039 priority patent/WO2018186320A1/ja
Priority to US16/603,127 priority patent/US11119400B2/en
Priority to KR1020197027637A priority patent/KR102510830B1/ko
Priority to TW111107820A priority patent/TWI799164B/zh
Priority to TW107111775A priority patent/TWI760471B/zh
Publication of JP2018180170A publication Critical patent/JP2018180170A/ja
Publication of JP2018180170A5 publication Critical patent/JP2018180170A5/ja
Application granted granted Critical
Publication of JP6808566B2 publication Critical patent/JP6808566B2/ja
Priority to US17/391,593 priority patent/US11435662B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
JP2017077200A 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 Active JP6808566B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2017077200A JP6808566B2 (ja) 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
SG10202112818PA SG10202112818PA (en) 2017-04-08 2018-04-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
PCT/JP2018/014039 WO2018186320A1 (ja) 2017-04-08 2018-04-02 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
US16/603,127 US11119400B2 (en) 2017-04-08 2018-04-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
KR1020197027637A KR102510830B1 (ko) 2017-04-08 2018-04-02 마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법
SG11201909351R SG11201909351RA (en) 2017-04-08 2018-04-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
TW111107820A TWI799164B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法
TW107111775A TWI760471B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法
US17/391,593 US11435662B2 (en) 2017-04-08 2021-08-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017077200A JP6808566B2 (ja) 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020204287A Division JP7033638B2 (ja) 2020-12-09 2020-12-09 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2018180170A JP2018180170A (ja) 2018-11-15
JP2018180170A5 JP2018180170A5 (https=) 2020-05-14
JP6808566B2 true JP6808566B2 (ja) 2021-01-06

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JP2017077200A Active JP6808566B2 (ja) 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Country Status (6)

Country Link
US (2) US11119400B2 (https=)
JP (1) JP6808566B2 (https=)
KR (1) KR102510830B1 (https=)
SG (2) SG10202112818PA (https=)
TW (2) TWI799164B (https=)
WO (1) WO2018186320A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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KR102429244B1 (ko) 2017-02-27 2022-08-05 호야 가부시키가이샤 마스크 블랭크 및 임프린트 몰드의 제조 방법
JP7231094B2 (ja) * 2018-12-12 2023-03-01 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7313166B2 (ja) * 2019-03-18 2023-07-24 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7638700B2 (ja) * 2020-12-24 2025-03-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN118201466B (zh) * 2024-05-20 2024-07-23 北京量子信息科学研究院 一种量子信息处理器件的制备方法及量子信息处理器件

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JPS5437579A (en) 1977-08-30 1979-03-20 Mitsubishi Electric Corp Chrome plate
JPH04125643A (ja) 1990-09-18 1992-04-27 Toppan Printing Co Ltd フォトマスクおよびフォトマスクブランク
US5380608A (en) 1991-11-12 1995-01-10 Dai Nippon Printing Co., Ltd. Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
JPH05289305A (ja) * 1992-04-08 1993-11-05 Dainippon Printing Co Ltd 位相シフトフォトマスク
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
JP3093632U (ja) * 2002-03-01 2003-05-16 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
US8535855B2 (en) * 2010-05-19 2013-09-17 Hoya Corporation Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
KR101269062B1 (ko) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6005530B2 (ja) 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
KR102046729B1 (ko) * 2013-09-24 2019-11-19 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
JP6229466B2 (ja) 2013-12-06 2017-11-15 信越化学工業株式会社 フォトマスクブランク
TW201537281A (zh) 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
KR101504557B1 (ko) * 2014-03-23 2015-03-20 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크
JP6612326B2 (ja) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP2016188958A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
KR102625449B1 (ko) * 2015-05-15 2024-01-16 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6573806B2 (ja) * 2015-08-31 2019-09-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
KR102368405B1 (ko) 2015-11-06 2022-02-28 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
US20190040516A1 (en) 2016-02-15 2019-02-07 Hoya Corporation Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US20210109436A1 (en) 2021-04-15
US20210364910A1 (en) 2021-11-25
SG11201909351RA (en) 2019-11-28
TW201842402A (zh) 2018-12-01
JP2018180170A (ja) 2018-11-15
TW202223532A (zh) 2022-06-16
US11119400B2 (en) 2021-09-14
WO2018186320A1 (ja) 2018-10-11
KR20190137790A (ko) 2019-12-11
US11435662B2 (en) 2022-09-06
TWI760471B (zh) 2022-04-11
KR102510830B1 (ko) 2023-03-17
SG10202112818PA (en) 2021-12-30
TWI799164B (zh) 2023-04-11

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