JP6808348B2 - 光電変換装置およびカメラ - Google Patents

光電変換装置およびカメラ Download PDF

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Publication number
JP6808348B2
JP6808348B2 JP2016091579A JP2016091579A JP6808348B2 JP 6808348 B2 JP6808348 B2 JP 6808348B2 JP 2016091579 A JP2016091579 A JP 2016091579A JP 2016091579 A JP2016091579 A JP 2016091579A JP 6808348 B2 JP6808348 B2 JP 6808348B2
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Japan
Prior art keywords
photoelectric conversion
region
conversion device
separation unit
pixel
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JP2016091579A
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Japanese (ja)
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JP2017199875A5 (OSRAM
JP2017199875A (ja
Inventor
信貴 浮ケ谷
信貴 浮ケ谷
英司 桑原
英司 桑原
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016091579A priority Critical patent/JP6808348B2/ja
Priority to US15/495,790 priority patent/US10665628B2/en
Publication of JP2017199875A publication Critical patent/JP2017199875A/ja
Publication of JP2017199875A5 publication Critical patent/JP2017199875A5/ja
Priority to US16/831,443 priority patent/US11139330B2/en
Priority to JP2020204367A priority patent/JP7490543B2/ja
Application granted granted Critical
Publication of JP6808348B2 publication Critical patent/JP6808348B2/ja
Priority to US17/461,697 priority patent/US11756976B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2016091579A 2016-04-28 2016-04-28 光電変換装置およびカメラ Active JP6808348B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016091579A JP6808348B2 (ja) 2016-04-28 2016-04-28 光電変換装置およびカメラ
US15/495,790 US10665628B2 (en) 2016-04-28 2017-04-24 Photoelectric conversion apparatus, camera, and moving body
US16/831,443 US11139330B2 (en) 2016-04-28 2020-03-26 Photoelectric conversion apparatus, camera, and moving body
JP2020204367A JP7490543B2 (ja) 2016-04-28 2020-12-09 光電変換装置およびカメラ
US17/461,697 US11756976B2 (en) 2016-04-28 2021-08-30 Photoelectric conversion apparatus, camera, and moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016091579A JP6808348B2 (ja) 2016-04-28 2016-04-28 光電変換装置およびカメラ

Related Child Applications (1)

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JP2020204367A Division JP7490543B2 (ja) 2016-04-28 2020-12-09 光電変換装置およびカメラ

Publications (3)

Publication Number Publication Date
JP2017199875A JP2017199875A (ja) 2017-11-02
JP2017199875A5 JP2017199875A5 (OSRAM) 2019-06-06
JP6808348B2 true JP6808348B2 (ja) 2021-01-06

Family

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Family Applications (1)

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JP2016091579A Active JP6808348B2 (ja) 2016-04-28 2016-04-28 光電変換装置およびカメラ

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US (3) US10665628B2 (OSRAM)
JP (1) JP6808348B2 (OSRAM)

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Publication number Priority date Publication date Assignee Title
JP6789653B2 (ja) * 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
JP6808348B2 (ja) 2016-04-28 2021-01-06 キヤノン株式会社 光電変換装置およびカメラ
JP7490543B2 (ja) * 2016-04-28 2024-05-27 キヤノン株式会社 光電変換装置およびカメラ
JP2018181910A (ja) * 2017-04-04 2018-11-15 浜松ホトニクス株式会社 光半導体装置の製造方法
US10629765B2 (en) * 2017-06-29 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Single photon avalanche diode
US10079261B1 (en) * 2017-08-17 2018-09-18 Omnivision Technologies, Inc. Raised electrode to reduce dark current
JP7250427B2 (ja) 2018-02-09 2023-04-03 キヤノン株式会社 光電変換装置、撮像システム、および移動体
KR102531355B1 (ko) * 2018-03-20 2023-05-10 삼성전자주식회사 이미지 센서
JP2022002229A (ja) * 2018-09-05 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および撮像素子
TWI886830B (zh) * 2018-10-17 2025-06-11 日商索尼半導體解決方案公司 攝像元件及電子機器
TWI686903B (zh) * 2019-02-01 2020-03-01 綠星電子股份有限公司 斷閘極金氧半場效電晶體的閘極結構及其製造方法
JP7481811B2 (ja) * 2019-07-26 2024-05-13 キヤノン株式会社 半導体装置
JP2021068788A (ja) * 2019-10-21 2021-04-30 キヤノン株式会社 光電変換装置、光電変換装置の製造方法、および撮像システム
KR102714960B1 (ko) 2019-11-08 2024-10-07 엘지디스플레이 주식회사 기판 홀을 가지는 표시 장치
JP7433863B2 (ja) * 2019-11-27 2024-02-20 キヤノン株式会社 光電変換装置、撮像システム、および移動体
CN115380381A (zh) * 2020-04-20 2022-11-22 索尼半导体解决方案公司 固态摄像元件
JP2023083369A (ja) * 2020-12-09 2023-06-15 キヤノン株式会社 光電変換装置およびカメラ
US20220328605A1 (en) * 2021-04-13 2022-10-13 Canon Kabushiki Kaisha Light-emitting element, light-emitting device, photoelectric conversion device, and electronic device
CN118120061A (zh) * 2021-10-27 2024-05-31 索尼半导体解决方案公司 摄像装置
JP2023065208A (ja) * 2021-10-27 2023-05-12 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス及び半導体デバイスの製造方法
KR20230148602A (ko) * 2022-04-18 2023-10-25 에스케이하이닉스 주식회사 이미지 센싱 장치
WO2025225733A1 (ja) * 2024-04-26 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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JP4742523B2 (ja) 2004-06-14 2011-08-10 ソニー株式会社 固体撮像素子及びその駆動方法
US7586139B2 (en) 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
JP2007311648A (ja) 2006-05-19 2007-11-29 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP5314914B2 (ja) 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
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JP6021439B2 (ja) * 2012-05-25 2016-11-09 キヤノン株式会社 固体撮像装置
KR20150087322A (ko) * 2012-11-22 2015-07-29 가부시키가이샤 니콘 촬상 소자 및 촬상 유닛
TWI498780B (zh) * 2013-01-22 2015-09-01 Henghao Technology Co Ltd 觸控面板
JP6278608B2 (ja) 2013-04-08 2018-02-14 キヤノン株式会社 半導体装置およびその製造方法
JP6119432B2 (ja) 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
KR102209097B1 (ko) 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP2016039315A (ja) 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
KR102367384B1 (ko) * 2015-01-13 2022-02-25 삼성전자주식회사 이미지 센서 및 그 형성 방법
TWI785618B (zh) 2016-01-27 2022-12-01 日商新力股份有限公司 固體攝像元件及電子機器
JP6808348B2 (ja) 2016-04-28 2021-01-06 キヤノン株式会社 光電変換装置およびカメラ

Also Published As

Publication number Publication date
US20210391364A1 (en) 2021-12-16
US10665628B2 (en) 2020-05-26
US20200227450A1 (en) 2020-07-16
US11139330B2 (en) 2021-10-05
JP2017199875A (ja) 2017-11-02
US20170317117A1 (en) 2017-11-02
US11756976B2 (en) 2023-09-12

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