JP2017199875A - 光電変換装置およびカメラ - Google Patents
光電変換装置およびカメラ Download PDFInfo
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- JP2017199875A JP2017199875A JP2016091579A JP2016091579A JP2017199875A JP 2017199875 A JP2017199875 A JP 2017199875A JP 2016091579 A JP2016091579 A JP 2016091579A JP 2016091579 A JP2016091579 A JP 2016091579A JP 2017199875 A JP2017199875 A JP 2017199875A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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Abstract
Description
1 表面
2 裏面
3 平面
10 素子分離部
20 画素分離部
30 画素分離部
Claims (13)
- 複数の光電変換素子を含む画素領域を有する光電変換装置であって、
第1面および前記第1面とは反対側の第2面を有し、前記第1面と前記第2面との間に前記複数の光電変換素子が配された半導体層を備え、
前記第1面と前記第2面との間にて前記第2面に沿った仮想的な平面を第3面として、前記画素領域は、前記第3面よりも前記第1面の側に配された絶縁体によって構成された素子分離部と、前記第3面を通るように前記半導体層に設けられた溝によって構成された第1分離部および第2分離部を含み、
前記第1分離部は前記第3面に対する法線方向において前記素子分離部に重なり、
前記第2分離部の前記第1面の側の端は、前記第1分離部の前記第1面の側の端よりも前記第2面の側に位置していることを特徴とする光電変換装置。 - 前記半導体層は、前記素子分離部によって画定された素子領域として、第1光電変換素子が設けられた第1素子領域と、第2光電変換素子が設けられた第2素子領域と、を含み、前記第2分離部は、前記法線方向において前記第1素子領域と前記第2素子領域の間の領域に重なる、請求項1に記載の光電変換装置。
- 前記半導体層は、前記素子分離部によって画定された素子領域として、前記前記第1素子領域と前記第2素子領域との間に配され、前記第1素子領域および前記第2素子領域とは異なる形状を有する第3素子領域を含み、
前記第2分離部は前記法線方向において前記第3素子領域に重なる、請求項2に記載の光電変換装置。 - 前記第3素子領域の上にはトランジスタのゲート電極が配されており、前記第2分離部は前記法線方向において前記ゲート電極に重なる、請求項3に記載の光電変換装置。
- 前記第2分離部は、第1部分と、第2部分とを有し、前記第2部分の前記第1面の側の端は、前記第1部分の前記第1面の側の端よりも前記第2面の側に位置し、前記第2部分は前記法線方向において前記ゲート電極に重なる、請求項4に記載の光電変換装置。
- 前記第2面に沿う方向のうち、前記第1素子領域と前記第2素子領域とが並ぶ方向を第1方向とし、前記第1方向に交差する方向を第2方向として、前記半導体層は、前記第2方向において前記第1素子領域に隣り合い、第3光電変換素子が設けられた第4素子領域を含み、
前記素子分離部は、前記第1素子領域と前記第4素子領域との間に位置する分離領域を有し、
前記第1部分は、前記法線方向において前記分離領域に重なる、請求項2乃至5のいずか1項に記載の光電変換装置。 - 前記第3面において、前記第2分離部の幅は前記第1分離部の幅よりも小さい、請求項1乃至6のいずか1項に記載の光電変換装置。
- 前記第1分離部を構成する前記溝は、前記第2面に連続した側面を有する、請求項1乃至7のいずれか1項に記載の光電変換装置。
- 複数の光電変換素子を含む画素領域を有する光電変換装置であって、
第1面および前記第1面とは反対側の第2面を有し、前記第1面と前記第2面との間に前記複数の光電変換素子が配された半導体層を備え、
前記画素領域は、前記半導体層に対して前記第1面の側に配された絶縁体によって構成された素子分離部と、前記第2面に連続した側面を有する溝によって構成された第1分離部および第2分離部を含み、
前記第1分離部は前記第2面に対する法線方向において前記素子分離部に重なり、
前記第2分離部の前記第1面の側の端は、前記第1分離部の前記第1面の側の端よりも前記第2面の側に位置していることを特徴とする光電変換装置。 - 前記画素領域にはMOSトランジスタが配されており、前記第2分離部は前記法線方向において前記MOSトランジスタに重なる、請求項1乃至9のいずれか1項に記載の光電変換装置。
- 前記第2分離部は、第1部分と、第2部分とを有し、前記第2部分の前記第1面の側の端は、前記第2部分の前記第1面の側の端よりも前記第2面の側に位置する、請求項1乃至10のいずれか1項に記載の光電変換装置。
- 前記第1分離部は、前記素子分離部に接続している、請求項1乃至11のいずれか1項に記載の光電変換装置。
- 請求項1乃至12のいずれか1項に記載の光電変換装置と、
前記光電変換装置から出力された信号を処理する信号処理装置、前記光電変換装置から出力された信号に基づく情報を記憶する記憶装置、前記光電変換装置から出力された信号に基づく情報を表示する表示装置、および、前記光電変換装置へ光を導く光学装置の少なくともいずれかと、
を備えるカメラ。
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JP2016091579A JP6808348B2 (ja) | 2016-04-28 | 2016-04-28 | 光電変換装置およびカメラ |
US15/495,790 US10665628B2 (en) | 2016-04-28 | 2017-04-24 | Photoelectric conversion apparatus, camera, and moving body |
US16/831,443 US11139330B2 (en) | 2016-04-28 | 2020-03-26 | Photoelectric conversion apparatus, camera, and moving body |
JP2020204367A JP7490543B2 (ja) | 2016-04-28 | 2020-12-09 | 光電変換装置およびカメラ |
US17/461,697 US11756976B2 (en) | 2016-04-28 | 2021-08-30 | Photoelectric conversion apparatus, camera, and moving body |
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JP2017199875A5 JP2017199875A5 (ja) | 2019-06-06 |
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Cited By (9)
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JP2019140251A (ja) * | 2018-02-09 | 2019-08-22 | キヤノン株式会社 | 光電変換装置、撮像システム、および移動体 |
CN112310132A (zh) * | 2019-07-26 | 2021-02-02 | 佳能株式会社 | 半导体装置和使用物体识别的设备 |
JP2021040166A (ja) * | 2016-04-28 | 2021-03-11 | キヤノン株式会社 | 光電変換装置およびカメラ |
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WO2021215290A1 (ja) * | 2020-04-20 | 2021-10-28 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
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US11139330B2 (en) | 2021-10-05 |
US10665628B2 (en) | 2020-05-26 |
US20170317117A1 (en) | 2017-11-02 |
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US20200227450A1 (en) | 2020-07-16 |
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