JP6788024B2 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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- JP6788024B2 JP6788024B2 JP2018544998A JP2018544998A JP6788024B2 JP 6788024 B2 JP6788024 B2 JP 6788024B2 JP 2018544998 A JP2018544998 A JP 2018544998A JP 2018544998 A JP2018544998 A JP 2018544998A JP 6788024 B2 JP6788024 B2 JP 6788024B2
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- 239000000758 substrate Substances 0.000 claims description 88
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 239000002178 crystalline material Substances 0.000 claims 1
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- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
Description
図1は、本開示の一実施形態に係る弾性波装置1の平面図であり、図2は、IDT電極3の構成を示す平面図であり、図3は、図1のIII−III線における矢視断面図である。
上述の例では、第1フィルタ10aと第2フィルタ10bの通過帯域の高低と、各IDT電極3の膜厚の大きさとの関係について特定していないが、第2フィルタ10bが、第1フィルタ10aよりも高い通過帯域を備え、そのIDT電極3の厚みは第1フィルタ10aに比べ厚くしてもよい。
上述の例では、1つのフィルタ10内で複数の共振子11がある場合に、同一フィルタ10内ではそのIDT電極3の膜厚に言及していないが、一定でもよいし、違っていてもよい。すなわち、1つのフィルタ10内で異なる膜厚のIDT電極3を備えていてもよい。
上述の例では、第1フィルタ10aおよび第2フィルタ10bともにラダー型のフィルタの例を説明したが、一方が多重モード型で他方がラダー型の組み合わせでもよいし、両方とも多重モード型でもよい。
2:圧電基板
10:フィルタ
10a:第1フィルタ
10b:第2フィルタ
3:IDT電極
32:電極指
32a:第1電極指
32b:第2電極指
6:支持基板
Claims (6)
- 第1面と第2面とを備える圧電基板と、
前記圧電基板の前記第2面に貼り合わされた支持基板と、
前記圧電基板の前記第1面に配置された第1フィルタおよび前記第1フィルタより高い通過帯域を備える第2フィルタと、を備え、
前記第1フィルタおよび前記第2フィルタは、それぞれ少なくとも1つの第1IDT電極および少なくとも1つの第2IDT電極を含み、前記第1IDT電極の厚みと前記第2IDT電極の厚みとが異なり、前記第1IDT電極の厚みは、前記第2IDT電極の厚みよりも薄い、弾性波装置。 - 前記第1IDT電極は複数あり、その厚みは全て同じであり、
前記第2IDT電極は複数あり、その厚みは全て同じである、請求項1に記載の弾性波装置。 - 前記第1フィルタは、前記第1IDT電極を含む複数の弾性波共振子を接続してなり、複数の前記弾性波共振子は、第1共振子と第2共振子とを備え、前記第1共振子の前記第1IDT電極は前記第2共振子に比べて厚い、請求項1に記載の弾性波装置。
- 前記第2フィルタは、前記第2IDT電極を含む複数の弾性波共振子を接続してなり、複数の前記弾性波共振子は、第3共振子と第4共振子とを備え、前記第3共振子の前記第2IDT電極は前記第4共振子に比べて厚い、請求項1に記載の弾性波装置。
- 前記第1フィルタは、前記第1IDT電極を含む複数の弾性波共振子を接続してなり、複数の前記弾性波共振子は、ラダー型フィルタを構成する直列共振子と並列共振子とを含み、前記直列共振子の前記第1IDT電極の厚みは前記並列共振子に比べて厚い、請求項1に記載の弾性波装置。
- 前記圧電基板は、タンタル酸リチウム基板であり、前記支持基板は、前記圧電基板よりも線膨張係数の小さい材料の結晶性材料からなる、請求項1乃至5のいずれかに記載の弾性波装置。
Applications Claiming Priority (3)
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JP2016199995 | 2016-10-11 | ||
JP2016199995 | 2016-10-11 | ||
PCT/JP2017/036615 WO2018070369A1 (ja) | 2016-10-11 | 2017-10-10 | 弾性波装置 |
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JPWO2018070369A1 JPWO2018070369A1 (ja) | 2019-07-25 |
JP6788024B2 true JP6788024B2 (ja) | 2020-11-18 |
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US (1) | US10938376B2 (ja) |
JP (1) | JP6788024B2 (ja) |
CN (1) | CN110063024B (ja) |
WO (1) | WO2018070369A1 (ja) |
Families Citing this family (6)
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JP6637990B2 (ja) * | 2015-10-30 | 2020-01-29 | 京セラ株式会社 | 弾性波共振子、弾性波フィルタ、分波器、通信装置および弾性波共振子の設計方法 |
JP2020182137A (ja) * | 2019-04-26 | 2020-11-05 | 京セラ株式会社 | 弾性波装置 |
WO2020261808A1 (ja) * | 2019-06-28 | 2020-12-30 | 株式会社村田製作所 | 弾性波フィルタ |
JPWO2021006055A1 (ja) * | 2019-07-05 | 2021-01-14 | ||
JPWO2021006056A1 (ja) * | 2019-07-05 | 2021-01-14 | ||
WO2021055324A1 (en) | 2019-09-16 | 2021-03-25 | Tohoku University | Surface acoustic wave device having mass-loaded electrode |
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KR100644470B1 (ko) * | 1997-07-28 | 2006-11-13 | 가부시끼가이샤 도시바 | 탄성표면파 필터 및 그의 제조방법 |
JP3317274B2 (ja) * | 1999-05-26 | 2002-08-26 | 株式会社村田製作所 | 弾性表面波装置及び弾性表面波装置の製造方法 |
DE102004037819B4 (de) * | 2004-08-04 | 2021-12-16 | Snaptrack, Inc. | Elektroakustisches Bauelement mit geringen Verlusten |
JP2007110342A (ja) * | 2005-10-12 | 2007-04-26 | Kyocera Corp | 弾性表面波素子及びその製造方法 |
JP2007214902A (ja) | 2006-02-09 | 2007-08-23 | Shin Etsu Chem Co Ltd | 弾性表面波素子 |
JP2010103920A (ja) * | 2008-10-27 | 2010-05-06 | Kyocera Corp | 弾性表面波装置及びその製造方法 |
CN104734662B (zh) * | 2009-04-22 | 2017-09-22 | 天工滤波方案日本有限公司 | 弹性波元件和使用它的电子设备 |
WO2012176455A1 (ja) * | 2011-06-23 | 2012-12-27 | パナソニック株式会社 | ラダー型弾性波フィルタ及びこれを用いたアンテナ共用器 |
DE112014001537B4 (de) * | 2013-03-21 | 2018-06-28 | Ngk Insulators, Ltd. | Verbundsubstrate für Akustikwellenelemente und Akustikwellenelemente |
WO2016129662A1 (ja) * | 2015-02-13 | 2016-08-18 | 京セラ株式会社 | 弾性波装置、分波器および通信装置 |
JP6390819B2 (ja) * | 2016-04-25 | 2018-09-19 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP2018182354A (ja) * | 2017-04-03 | 2018-11-15 | 株式会社村田製作所 | 弾性波装置 |
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- 2017-10-10 JP JP2018544998A patent/JP6788024B2/ja active Active
- 2017-10-10 WO PCT/JP2017/036615 patent/WO2018070369A1/ja active Application Filing
- 2017-10-10 CN CN201780061020.1A patent/CN110063024B/zh active Active
- 2017-10-10 US US16/340,012 patent/US10938376B2/en active Active
Also Published As
Publication number | Publication date |
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CN110063024A (zh) | 2019-07-26 |
US10938376B2 (en) | 2021-03-02 |
US20200036360A1 (en) | 2020-01-30 |
WO2018070369A1 (ja) | 2018-04-19 |
CN110063024B (zh) | 2024-01-19 |
JPWO2018070369A1 (ja) | 2019-07-25 |
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