JPWO2021006056A1 - - Google Patents

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Publication number
JPWO2021006056A1
JPWO2021006056A1 JP2021530594A JP2021530594A JPWO2021006056A1 JP WO2021006056 A1 JPWO2021006056 A1 JP WO2021006056A1 JP 2021530594 A JP2021530594 A JP 2021530594A JP 2021530594 A JP2021530594 A JP 2021530594A JP WO2021006056 A1 JPWO2021006056 A1 JP WO2021006056A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021530594A
Other versions
JP7510417B2 (ja
JPWO2021006056A5 (ja
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Publication of JPWO2021006056A1 publication Critical patent/JPWO2021006056A1/ja
Publication of JPWO2021006056A5 publication Critical patent/JPWO2021006056A5/ja
Application granted granted Critical
Publication of JP7510417B2 publication Critical patent/JP7510417B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2021530594A 2019-07-05 2020-06-25 弾性波装置、高周波フロントエンド回路及び通信装置 Active JP7510417B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019126541 2019-07-05
JP2019126541 2019-07-05
PCT/JP2020/025014 WO2021006056A1 (ja) 2019-07-05 2020-06-25 弾性波装置、高周波フロントエンド回路及び通信装置

Publications (3)

Publication Number Publication Date
JPWO2021006056A1 true JPWO2021006056A1 (ja) 2021-01-14
JPWO2021006056A5 JPWO2021006056A5 (ja) 2022-03-17
JP7510417B2 JP7510417B2 (ja) 2024-07-03

Family

ID=74115170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021530594A Active JP7510417B2 (ja) 2019-07-05 2020-06-25 弾性波装置、高周波フロントエンド回路及び通信装置

Country Status (5)

Country Link
US (1) US20220123731A1 (ja)
JP (1) JP7510417B2 (ja)
KR (1) KR20220011693A (ja)
CN (1) CN113924727A (ja)
WO (1) WO2021006056A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020081573A2 (en) * 2018-10-16 2020-04-23 Tohoku University Acoustic wave devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015012005A1 (ja) * 2013-07-25 2015-01-29 日本碍子株式会社 複合基板及びその製法
US20170222622A1 (en) * 2016-01-28 2017-08-03 Triquint Semiconductor, Inc. Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof
WO2018043610A1 (ja) * 2016-09-02 2018-03-08 株式会社村田製作所 弾性波フィルタ装置、高周波フロントエンド回路及び通信装置
WO2018070369A1 (ja) * 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) * 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス
JP2019036963A (ja) * 2017-08-18 2019-03-07 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. キャリアアグリゲーションシステム用の弾性表面波デバイスを備えたフィルタ
JP2019080313A (ja) * 2017-10-23 2019-05-23 コーボ ユーエス，インコーポレイティド 誘導ｓａｗデバイスのための水晶方位

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10924085B2 (en) 2016-10-17 2021-02-16 Qorvo Us, Inc. Guided acoustic wave device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015012005A1 (ja) * 2013-07-25 2015-01-29 日本碍子株式会社 複合基板及びその製法
US20170222622A1 (en) * 2016-01-28 2017-08-03 Triquint Semiconductor, Inc. Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof
WO2018043610A1 (ja) * 2016-09-02 2018-03-08 株式会社村田製作所 弾性波フィルタ装置、高周波フロントエンド回路及び通信装置
WO2018070369A1 (ja) * 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) * 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス
JP2019036963A (ja) * 2017-08-18 2019-03-07 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. キャリアアグリゲーションシステム用の弾性表面波デバイスを備えたフィルタ
JP2019080313A (ja) * 2017-10-23 2019-05-23 コーボ ユーエス，インコーポレイティド 誘導ｓａｗデバイスのための水晶方位

Also Published As

Publication number Publication date
KR20220011693A (ko) 2022-01-28
JP7510417B2 (ja) 2024-07-03
CN113924727A (zh) 2022-01-11
US20220123731A1 (en) 2022-04-21
WO2021006056A1 (ja) 2021-01-14

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