JP6770958B2 - ランドスケープの解析および利用 - Google Patents
ランドスケープの解析および利用 Download PDFInfo
- Publication number
- JP6770958B2 JP6770958B2 JP2017528095A JP2017528095A JP6770958B2 JP 6770958 B2 JP6770958 B2 JP 6770958B2 JP 2017528095 A JP2017528095 A JP 2017528095A JP 2017528095 A JP2017528095 A JP 2017528095A JP 6770958 B2 JP6770958 B2 JP 6770958B2
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- JP
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- Prior art keywords
- measurement
- landscape
- overlay
- target
- pupil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462083891P | 2014-11-25 | 2014-11-25 | |
| US62/083,891 | 2014-11-25 | ||
| US201562100384P | 2015-01-06 | 2015-01-06 | |
| US62/100,384 | 2015-01-06 | ||
| PCT/US2015/062523 WO2016086056A1 (en) | 2014-11-25 | 2015-11-24 | Analyzing and utilizing landscapes |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020162494A Division JP7023337B2 (ja) | 2014-11-25 | 2020-09-28 | 測定方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017537317A JP2017537317A (ja) | 2017-12-14 |
| JP2017537317A5 JP2017537317A5 (enExample) | 2019-01-10 |
| JP6770958B2 true JP6770958B2 (ja) | 2020-10-21 |
Family
ID=56075006
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017528095A Active JP6770958B2 (ja) | 2014-11-25 | 2015-11-24 | ランドスケープの解析および利用 |
| JP2020162494A Active JP7023337B2 (ja) | 2014-11-25 | 2020-09-28 | 測定方法 |
| JP2022018205A Pending JP2022065040A (ja) | 2014-11-25 | 2022-02-08 | 測定方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020162494A Active JP7023337B2 (ja) | 2014-11-25 | 2020-09-28 | 測定方法 |
| JP2022018205A Pending JP2022065040A (ja) | 2014-11-25 | 2022-02-08 | 測定方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10831108B2 (enExample) |
| JP (3) | JP6770958B2 (enExample) |
| KR (1) | KR102269514B1 (enExample) |
| CN (2) | CN107078074B (enExample) |
| IL (1) | IL251972B (enExample) |
| SG (1) | SG11201703585RA (enExample) |
| TW (2) | TWI719804B (enExample) |
| WO (1) | WO2016086056A1 (enExample) |
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| KR20170092522A (ko) | 2014-09-08 | 2017-08-11 | 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 | 금속 격자 및 이의 측정 방법 |
| EP3224676A1 (en) | 2014-11-26 | 2017-10-04 | ASML Netherlands B.V. | Metrology method, computer product and system |
| TWI760984B (zh) | 2015-05-19 | 2022-04-11 | 美商克萊譚克公司 | 用於疊對測量之方法 |
| US9995689B2 (en) * | 2015-05-22 | 2018-06-12 | Nanometrics Incorporated | Optical metrology using differential fitting |
| CN107924137B (zh) | 2015-06-17 | 2021-03-05 | Asml荷兰有限公司 | 基于配置方案间的一致性的配置方案选择 |
| WO2017099843A1 (en) | 2015-12-08 | 2017-06-15 | Kla-Tencor Corporation | Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination |
| US10670975B2 (en) | 2015-12-17 | 2020-06-02 | Asml Netherlands B.V. | Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured |
| TWI780741B (zh) | 2016-02-24 | 2022-10-11 | 美商克萊譚克公司 | 光學計量之準確度提升 |
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| WO2015031337A1 (en) * | 2013-08-27 | 2015-03-05 | Kla-Tencor Corporation | Removing process-variation-related inaccuracies from scatterometry measurements |
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| JP6509225B2 (ja) * | 2013-12-11 | 2019-05-08 | ケーエルエー−テンカー コーポレイション | 要件に対するターゲット及びプロセス感度の分析 |
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| US9851300B1 (en) * | 2014-04-04 | 2017-12-26 | Kla-Tencor Corporation | Decreasing inaccuracy due to non-periodic effects on scatterometric signals |
| WO2016037003A1 (en) * | 2014-09-03 | 2016-03-10 | Kla-Tencor Corporation | Optimizing the utilization of metrology tools |
| WO2016123552A1 (en) * | 2015-01-30 | 2016-08-04 | Kla-Tencor Corporation | Device metrology targets and methods |
| US9903711B2 (en) * | 2015-04-06 | 2018-02-27 | KLA—Tencor Corporation | Feed forward of metrology data in a metrology system |
| WO2017099843A1 (en) * | 2015-12-08 | 2017-06-15 | Kla-Tencor Corporation | Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination |
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| CN112698551B (zh) | 2024-04-23 |
| TW201633419A (zh) | 2016-09-16 |
| JP7023337B2 (ja) | 2022-02-21 |
| JP2020201293A (ja) | 2020-12-17 |
| SG11201703585RA (en) | 2017-06-29 |
| US10831108B2 (en) | 2020-11-10 |
| TWI711096B (zh) | 2020-11-21 |
| IL251972A0 (en) | 2017-06-29 |
| CN107078074A (zh) | 2017-08-18 |
| JP2022065040A (ja) | 2022-04-26 |
| CN107078074B (zh) | 2021-05-25 |
| TWI719804B (zh) | 2021-02-21 |
| TW202018836A (zh) | 2020-05-16 |
| KR20170088403A (ko) | 2017-08-01 |
| IL251972B (en) | 2022-03-01 |
| CN112698551A (zh) | 2021-04-23 |
| US20160313658A1 (en) | 2016-10-27 |
| JP2017537317A (ja) | 2017-12-14 |
| WO2016086056A1 (en) | 2016-06-02 |
| KR102269514B1 (ko) | 2021-06-25 |
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