JP6770958B2 - ランドスケープの解析および利用 - Google Patents

ランドスケープの解析および利用 Download PDF

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Publication number
JP6770958B2
JP6770958B2 JP2017528095A JP2017528095A JP6770958B2 JP 6770958 B2 JP6770958 B2 JP 6770958B2 JP 2017528095 A JP2017528095 A JP 2017528095A JP 2017528095 A JP2017528095 A JP 2017528095A JP 6770958 B2 JP6770958 B2 JP 6770958B2
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Prior art keywords
measurement
landscape
overlay
target
pupil
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Japanese (ja)
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JP2017537317A5 (enExample
JP2017537317A (ja
Inventor
タル マルチアーノ
タル マルチアーノ
バラク ブリンゴルツ
バラク ブリンゴルツ
エフゲニー グレヴィッチ
エフゲニー グレヴィッチ
イド アダム
イド アダム
ザエフ リンデンフェルド
ザエフ リンデンフェルド
ゼン ジャオ
ゼン ジャオ
ヨエル フェレル
ヨエル フェレル
ダニエル カンデル
ダニエル カンデル
ナダフ カルメル
ナダフ カルメル
アムノン マナッセン
アムノン マナッセン
ヌリエル アミル
ヌリエル アミル
オデド カミンスキー
オデド カミンスキー
タル ヤジフ
タル ヤジフ
オフェル ザハラン
オフェル ザハラン
モシェ クーパー
モシェ クーパー
ロエー スリマルスキー
ロエー スリマルスキー
トム レヴィアント
トム レヴィアント
ノガ セラ
ノガ セラ
ボリス エフラティ
ボリス エフラティ
リラク サルトーン
リラク サルトーン
アミル ハンデルマン
アミル ハンデルマン
エルサフォン アシュワル
エルサフォン アシュワル
オハド バチャール
オハド バチャール
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KLA Corp
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KLA Corp
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Publication of JP2017537317A5 publication Critical patent/JP2017537317A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H10P74/23—
    • H10P74/203—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
JP2017528095A 2014-11-25 2015-11-24 ランドスケープの解析および利用 Active JP6770958B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462083891P 2014-11-25 2014-11-25
US62/083,891 2014-11-25
US201562100384P 2015-01-06 2015-01-06
US62/100,384 2015-01-06
PCT/US2015/062523 WO2016086056A1 (en) 2014-11-25 2015-11-24 Analyzing and utilizing landscapes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020162494A Division JP7023337B2 (ja) 2014-11-25 2020-09-28 測定方法

Publications (3)

Publication Number Publication Date
JP2017537317A JP2017537317A (ja) 2017-12-14
JP2017537317A5 JP2017537317A5 (enExample) 2019-01-10
JP6770958B2 true JP6770958B2 (ja) 2020-10-21

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JP2017528095A Active JP6770958B2 (ja) 2014-11-25 2015-11-24 ランドスケープの解析および利用
JP2020162494A Active JP7023337B2 (ja) 2014-11-25 2020-09-28 測定方法
JP2022018205A Pending JP2022065040A (ja) 2014-11-25 2022-02-08 測定方法

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JP2022018205A Pending JP2022065040A (ja) 2014-11-25 2022-02-08 測定方法

Country Status (8)

Country Link
US (1) US10831108B2 (enExample)
JP (3) JP6770958B2 (enExample)
KR (1) KR102269514B1 (enExample)
CN (2) CN112698551B (enExample)
IL (1) IL251972B (enExample)
SG (1) SG11201703585RA (enExample)
TW (2) TWI711096B (enExample)
WO (1) WO2016086056A1 (enExample)

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US20160313658A1 (en) 2016-10-27
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KR20170088403A (ko) 2017-08-01
TW202018836A (zh) 2020-05-16
JP7023337B2 (ja) 2022-02-21
JP2020201293A (ja) 2020-12-17
CN112698551A (zh) 2021-04-23
JP2017537317A (ja) 2017-12-14
CN107078074B (zh) 2021-05-25
US10831108B2 (en) 2020-11-10
CN112698551B (zh) 2024-04-23
IL251972A0 (en) 2017-06-29
CN107078074A (zh) 2017-08-18
TW201633419A (zh) 2016-09-16
TWI719804B (zh) 2021-02-21
JP2022065040A (ja) 2022-04-26
IL251972B (en) 2022-03-01
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KR102269514B1 (ko) 2021-06-25
TWI711096B (zh) 2020-11-21

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