CN112698551B - 分析及利用景观 - Google Patents

分析及利用景观 Download PDF

Info

Publication number
CN112698551B
CN112698551B CN202011580664.1A CN202011580664A CN112698551B CN 112698551 B CN112698551 B CN 112698551B CN 202011580664 A CN202011580664 A CN 202011580664A CN 112698551 B CN112698551 B CN 112698551B
Authority
CN
China
Prior art keywords
pupil
metric
landscape
metrology
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011580664.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN112698551A (zh
Inventor
T·马西安诺
B·布尔戈尔茨
E·古列维奇
I·阿达姆
Z·林登费尔德
Z·赵
Y·弗莱
D·坎戴尔
N·卡梅尔
A·玛纳森
N·阿米尔
O·卡米斯开
T·耶其夫
O·萨哈兰
M·库柏
R·苏里马斯基
T·里维安特
N·夕拉
B·埃弗拉蒂
L·撒尔通
A·汉德曼
E·亚希渥
O·巴沙尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Priority to CN202011580664.1A priority Critical patent/CN112698551B/zh
Publication of CN112698551A publication Critical patent/CN112698551A/zh
Application granted granted Critical
Publication of CN112698551B publication Critical patent/CN112698551B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
CN202011580664.1A 2014-11-25 2015-11-24 分析及利用景观 Active CN112698551B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011580664.1A CN112698551B (zh) 2014-11-25 2015-11-24 分析及利用景观

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201462083891P 2014-11-25 2014-11-25
US62/083,891 2014-11-25
US201562100384P 2015-01-06 2015-01-06
US62/100,384 2015-01-06
CN201580060081.7A CN107078074B (zh) 2014-11-25 2015-11-24 分析及利用景观
PCT/US2015/062523 WO2016086056A1 (en) 2014-11-25 2015-11-24 Analyzing and utilizing landscapes
CN202011580664.1A CN112698551B (zh) 2014-11-25 2015-11-24 分析及利用景观

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580060081.7A Division CN107078074B (zh) 2014-11-25 2015-11-24 分析及利用景观

Publications (2)

Publication Number Publication Date
CN112698551A CN112698551A (zh) 2021-04-23
CN112698551B true CN112698551B (zh) 2024-04-23

Family

ID=56075006

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202011580664.1A Active CN112698551B (zh) 2014-11-25 2015-11-24 分析及利用景观
CN201580060081.7A Active CN107078074B (zh) 2014-11-25 2015-11-24 分析及利用景观

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201580060081.7A Active CN107078074B (zh) 2014-11-25 2015-11-24 分析及利用景观

Country Status (8)

Country Link
US (1) US10831108B2 (enExample)
JP (3) JP6770958B2 (enExample)
KR (1) KR102269514B1 (enExample)
CN (2) CN112698551B (enExample)
IL (1) IL251972B (enExample)
SG (1) SG11201703585RA (enExample)
TW (2) TWI719804B (enExample)
WO (1) WO2016086056A1 (enExample)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170092522A (ko) 2014-09-08 2017-08-11 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 금속 격자 및 이의 측정 방법
KR102294349B1 (ko) 2014-11-26 2021-08-26 에이에스엠엘 네델란즈 비.브이. 계측 방법, 컴퓨터 제품 및 시스템
TWI755987B (zh) 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
IL256196B (en) 2015-06-17 2022-07-01 Asml Netherlands Bv Recipe selection based on inter-recipe consistency
KR102393740B1 (ko) 2015-12-08 2022-05-02 케이엘에이 코포레이션 편광 타겟 및 편광 조명을 사용한 회절 차수의 진폭 및 위상의 제어
CN109073980B (zh) 2015-12-17 2021-06-18 Asml荷兰有限公司 量测设备的调节或基于已测量目标的特性而由量测设备进行的测量
US20180047646A1 (en) 2016-02-24 2018-02-15 Kla-Tencor Corporation Accuracy improvements in optical metrology
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology
CN108700829B (zh) 2016-02-26 2021-05-18 Asml荷兰有限公司 测量结构的方法、检查设备、光刻系统、器件制造方法
IL262114B2 (en) 2016-04-22 2023-04-01 Asml Netherlands Bv Determining the stack difference and correcting with the help of the stack difference
US10394132B2 (en) * 2016-05-17 2019-08-27 Asml Netherlands B.V. Metrology robustness based on through-wavelength similarity
IL263765B2 (en) * 2016-07-15 2023-04-01 Asml Netherlands Bv Method and device for designing a target field for metrology
US10578982B2 (en) 2016-08-17 2020-03-03 Asml Netherlands B.V. Substrate measurement recipe design of, or for, a target including a latent image
IL265585B (en) * 2016-09-27 2022-09-01 Asml Netherlands Bv Metrology recipe selection
EP3299890A1 (en) * 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
US10897566B2 (en) 2016-09-28 2021-01-19 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
WO2018087207A1 (en) * 2016-11-10 2018-05-17 Asml Netherlands B.V. Design and correction using stack difference
CN109923480B (zh) * 2016-11-14 2024-05-07 科磊股份有限公司 具有具备增强功能性的集成型计量工具的光刻系统
US10496781B2 (en) * 2016-12-19 2019-12-03 Kla Tencor Corporation Metrology recipe generation using predicted metrology images
US10824079B2 (en) * 2017-01-03 2020-11-03 Kla-Tencor Corporation Diffraction based overlay scatterometry
FR3062516B1 (fr) 2017-01-30 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure du desalignement entre une premiere et une seconde zones de gravure
JP6864122B2 (ja) * 2017-05-22 2021-04-21 ケーエルエー コーポレイション レシピ最適化及び計測のためのゾーナル分析
JP6917477B2 (ja) 2017-06-14 2021-08-11 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及びリソグラフィ方法
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
KR102362671B1 (ko) * 2017-07-06 2022-02-14 케이엘에이 코포레이션 오버레이 계측에서 높은 정확도를 달성하기 위한 이미징 기술의 진폭 및 위상 비대칭 추정
US10401738B2 (en) 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US10627720B2 (en) 2017-08-18 2020-04-21 Globalfoundries Inc. Overlay mark structures
WO2019045780A1 (en) * 2017-08-30 2019-03-07 Kla-Tencor Corporation QUICK SETTING OF METROLOGY MEASUREMENT PARAMETERS BASED ON PROCESS VARIATION
US10699969B2 (en) 2017-08-30 2020-06-30 Kla-Tencor Corporation Quick adjustment of metrology measurement parameters according to process variation
EP3462239A1 (en) * 2017-09-27 2019-04-03 ASML Netherlands B.V. Metrology in lithographic processes
JP6979529B2 (ja) 2017-09-11 2021-12-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィプロセスにおける計測
US10565697B2 (en) * 2017-10-22 2020-02-18 Kla-Tencor Corporation Utilizing overlay misregistration error estimations in imaging overlay metrology
US11199506B2 (en) * 2018-02-21 2021-12-14 Applied Materials Israel Ltd. Generating a training set usable for examination of a semiconductor specimen
JP7177847B2 (ja) * 2018-03-19 2022-11-24 ケーエルエー コーポレイション 複数波長を用いたオーバーレイ測定
US12416580B2 (en) * 2018-05-07 2025-09-16 Unm Rainforest Innovations Method and system for in-line optical scatterometry
CN114997408A (zh) * 2018-06-14 2022-09-02 诺威有限公司 半导体度量方法和半导体度量系统
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
NL2021852A (en) 2018-08-01 2018-11-09 Asml Netherlands Bv Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
US11410111B1 (en) * 2018-08-08 2022-08-09 Wells Fargo Bank, N.A. Generating predicted values based on data analysis using machine learning
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
US11062928B2 (en) 2019-10-07 2021-07-13 Kla Corporation Process optimization using design of experiments and response surface models
JP7431824B2 (ja) * 2018-11-21 2024-02-15 ケーエルエー コーポレイション スキャトロメトリオーバーレイ(scol)測定方法及びscol測定システム
CN113039407B (zh) 2018-11-21 2024-11-15 科磊股份有限公司 单个单元灰度散射术重叠目标及其使用变化照明参数的测量
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11333982B2 (en) * 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
US10928739B2 (en) * 2019-02-22 2021-02-23 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices
US20220244649A1 (en) * 2019-07-04 2022-08-04 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
CN118800674A (zh) * 2019-07-10 2024-10-18 科磊股份有限公司 数据驱动的错位参数配置与测量的系统及方法
US11360397B2 (en) * 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
WO2021073854A1 (en) * 2019-10-14 2021-04-22 Asml Holding N.V. Metrology mark structure and method of determining metrology mark structure
WO2021087345A1 (en) 2019-11-01 2021-05-06 Unm Rainforest Innovations In-line angular optical multi-point scatterometry for nanomanufacturing systems
US11725934B2 (en) 2019-11-28 2023-08-15 Kla Corporation Systems and methods for metrology optimization based on metrology landscapes
US11688616B2 (en) 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
USD977504S1 (en) 2020-07-22 2023-02-07 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US12283503B2 (en) 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US12406891B2 (en) 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
US12105414B2 (en) 2021-11-27 2024-10-01 Kla Corporation Targets for diffraction-based overlay error metrology
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
CN115327857A (zh) * 2022-05-30 2022-11-11 上海华力集成电路制造有限公司 一种量测方法、激光套刻装置、计算机存储介质及模组
IL293633B2 (en) * 2022-06-06 2024-06-01 Nova Ltd A system and method for building a library and using it in measurements on designed buildings
US12092966B2 (en) * 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
US20240337953A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for tracking real-time position for scanning overlay metrology
TW202503418A (zh) * 2023-06-02 2025-01-16 美商科磊股份有限公司 經由寬頻照明之單次抓取瞳孔景觀
EP4538794A1 (en) * 2023-10-13 2025-04-16 ASML Netherlands B.V. Metrology method and associated metrology device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103003754A (zh) * 2010-07-19 2013-03-27 Asml荷兰有限公司 用于确定重叠误差的方法和设备
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
TW201423286A (zh) * 2012-11-05 2014-06-16 Asml Netherlands Bv 用於量測微結構之不對稱性之方法及裝置、位置量測方法、位置量測裝置、微影裝置及器件製造方法
WO2014138741A1 (en) * 2013-03-08 2014-09-12 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7352453B2 (en) 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
KR101565071B1 (ko) 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7656518B2 (en) * 2007-03-30 2010-02-02 Asml Netherlands B.V. Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus
NL2006700A (en) * 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
US8666703B2 (en) * 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
CN103201682B (zh) * 2010-11-12 2015-06-17 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
KR101943593B1 (ko) * 2011-04-06 2019-01-30 케이엘에이-텐코 코포레이션 공정 제어를 개선하기 위한 품질 메트릭 제공 방법 및 시스템
US9310296B2 (en) * 2011-06-20 2016-04-12 Kla-Tencor Corporation Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology
US8681413B2 (en) 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US20130110477A1 (en) * 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology
US10255385B2 (en) * 2012-03-28 2019-04-09 Kla-Tencor Corporation Model optimization approach based on spectral sensitivity
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
US10242290B2 (en) * 2012-11-09 2019-03-26 Kla-Tencor Corporation Method, system, and user interface for metrology target characterization
NL2011816A (en) * 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
US9341769B2 (en) 2012-12-17 2016-05-17 Kla-Tencor Corporation Spectral control system
US9512985B2 (en) 2013-02-22 2016-12-06 Kla-Tencor Corporation Systems for providing illumination in optical metrology
US9910953B2 (en) * 2013-03-04 2018-03-06 Kla-Tencor Corporation Metrology target identification, design and verification
US9909982B2 (en) * 2013-03-08 2018-03-06 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
KR101855243B1 (ko) * 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
US9518916B1 (en) * 2013-10-18 2016-12-13 Kla-Tencor Corporation Compressive sensing for metrology
KR102265868B1 (ko) * 2013-12-11 2021-06-16 케이엘에이 코포레이션 요건에 대한 타겟 및 프로세스 감도 분석
US10365230B1 (en) * 2014-03-19 2019-07-30 Kla-Tencor Corporation Scatterometry overlay based on reflection peak locations
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
WO2016037003A1 (en) * 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
WO2016123552A1 (en) * 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
KR102393740B1 (ko) * 2015-12-08 2022-05-02 케이엘에이 코포레이션 편광 타겟 및 편광 조명을 사용한 회절 차수의 진폭 및 위상의 제어

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103003754A (zh) * 2010-07-19 2013-03-27 Asml荷兰有限公司 用于确定重叠误差的方法和设备
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
TW201423286A (zh) * 2012-11-05 2014-06-16 Asml Netherlands Bv 用於量測微結構之不對稱性之方法及裝置、位置量測方法、位置量測裝置、微影裝置及器件製造方法
WO2014138741A1 (en) * 2013-03-08 2014-09-12 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement

Also Published As

Publication number Publication date
CN112698551A (zh) 2021-04-23
IL251972A0 (en) 2017-06-29
TW201633419A (zh) 2016-09-16
US20160313658A1 (en) 2016-10-27
TWI711096B (zh) 2020-11-21
JP6770958B2 (ja) 2020-10-21
JP2020201293A (ja) 2020-12-17
KR20170088403A (ko) 2017-08-01
JP2017537317A (ja) 2017-12-14
JP7023337B2 (ja) 2022-02-21
SG11201703585RA (en) 2017-06-29
WO2016086056A1 (en) 2016-06-02
CN107078074B (zh) 2021-05-25
JP2022065040A (ja) 2022-04-26
US10831108B2 (en) 2020-11-10
TW202018836A (zh) 2020-05-16
KR102269514B1 (ko) 2021-06-25
TWI719804B (zh) 2021-02-21
CN107078074A (zh) 2017-08-18
IL251972B (en) 2022-03-01

Similar Documents

Publication Publication Date Title
CN112698551B (zh) 分析及利用景观
CN110596146B (zh) 用于基于图像的测量及基于散射术的叠对测量的信号响应度量
CN116936393B (zh) 光学计量的准确度提升
TWI733150B (zh) 多重圖案化參數之量測
CN112331576B (zh) 计量目标设计方法以及验证计量目标
US20190086200A1 (en) Machine Learning in Metrology Measurements
EP3507653B1 (en) Diffraction-based focus metrology
US9874527B2 (en) Removing process-variation-related inaccuracies from scatterometry measurements
US9678421B2 (en) Target element types for process parameter metrology
TWI598972B (zh) 減少散射量測疊對量測技術中演算法之不準確
CN106796105A (zh) 多重图案化工艺的度量
US20250348008A1 (en) Single pad overlay measurement
US20250284206A1 (en) Measurement of fabrication parameters based on moiré interference pattern components

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant