JP6864122B2 - レシピ最適化及び計測のためのゾーナル分析 - Google Patents
レシピ最適化及び計測のためのゾーナル分析 Download PDFInfo
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- JP6864122B2 JP6864122B2 JP2019564033A JP2019564033A JP6864122B2 JP 6864122 B2 JP6864122 B2 JP 6864122B2 JP 2019564033 A JP2019564033 A JP 2019564033A JP 2019564033 A JP2019564033 A JP 2019564033A JP 6864122 B2 JP6864122 B2 JP 6864122B2
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- 238000004458 analytical method Methods 0.000 title claims description 69
- 238000005259 measurement Methods 0.000 title description 27
- 238000005457 optimization Methods 0.000 title description 14
- 238000000034 method Methods 0.000 claims description 72
- 235000012431 wafers Nutrition 0.000 claims description 57
- 238000005303 weighing Methods 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 20
- 238000004590 computer program Methods 0.000 claims description 11
- 238000005070 sampling Methods 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 9
- 230000003595 spectral effect Effects 0.000 claims description 6
- 238000013480 data collection Methods 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 13
- 238000013461 design Methods 0.000 description 7
- 230000010365 information processing Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007123 defense Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000006399 behavior Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D18/00—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
Claims (13)
- 少なくとも1個のセットアップパラメタに関しゾーナル分析を用いレシピセットアップ手順を実行するステップと、
少なくとも1個の計量指標に関し前記ゾーナル分析を用い計量ツールで計量計測を実行するステップと、
を有し、
前記ゾーナル分析が少なくとも1つのウェハに亘る前記少なくとも1個のセットアップパラメタの空間変数値を含み、前記ゾーナル分析が前記レシピセットアップ手順のランク付けフェーズ中に適用され、前記ゾーナル分析が少なくともウェハ中心をウェハエッジから区別するよう構成された同心ゾーン群に関して実行される、方法。 - 請求項1に記載の方法であって、前記ゾーナル分析が前記レシピセットアップ手順のデータ収集フェーズ中と詳細標本化フェーズ中の少なくともいずれかに用いられる、方法。
- 請求項1に記載の方法であって、前記少なくとも1個のセットアップパラメタが複数個のセットアップパラメタを含み、前記ゾーナル分析が相異なるパラメタに関する相異なるウェハゾーンを含む、方法。
- 請求項1に記載の方法であって、前記少なくとも1個のセットアップパラメタが、感度、少なくとも1個の正確性指示子、少なくとも1個の目標品質指示子、少なくとも1個の性能指示子及び少なくとも1個のプロセス指示子のうちいずれかを含む、方法。
- 請求項1に記載の方法であって、前記少なくとも1個の計量指標が複数個の計量指標を含み、前記ゾーナル分析が相異なる指標に関する相異なるウェハゾーンを含む、方法。
- 請求項5に記載の方法であって、前記少なくとも1個の計量指標が、オーバレイ、残差、ツール性能パラメタ及び質指標のうちいずれかを含む、方法。
- 請求項1に記載の方法であって、前記少なくとも1個の計量指標が、オーバレイ、残差、ツール性能パラメタ及び質指標のうちいずれかを含む、方法。
- 請求項1に記載の方法であって、前記ゾーナル分析が空間連続様式で実行される、方法。
- 請求項8に記載の方法であって、前記ゾーナル分析が可調スペクトル照明に関して実行され、前記少なくとも1個のセットアップパラメタが照明波長を含む、方法。
- 請求項1に記載の方法であって、前記ゾーナル分析が複数のウェハに関して実行される、方法。
- 請求項1に記載の方法であって、少なくとも部分的に、少なくとも1個のコンピュータプロセッサにより実行される、方法。
- 非一時的コンピュータ可読格納媒体を備えるコンピュータプログラム製品であって、前記非一時的コンピュータ可読格納媒体が、前記コンピュータプログラム製品によって体現されるコンピュータ可読プログラムを有し、該コンピュータ可読プログラムが請求項1に記載の方法を実行するよう構成されている、コンピュータプログラム製品。
- 請求項12に記載のコンピュータプログラム製品を備える計量モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762509679P | 2017-05-22 | 2017-05-22 | |
US62/509,679 | 2017-05-22 | ||
PCT/US2017/065629 WO2018217232A1 (en) | 2017-05-22 | 2017-12-11 | Zonal analysis for recipe optimization and measurement |
Publications (3)
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JP2020522127A JP2020522127A (ja) | 2020-07-27 |
JP2020522127A5 JP2020522127A5 (ja) | 2021-01-28 |
JP6864122B2 true JP6864122B2 (ja) | 2021-04-21 |
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JP2019564033A Active JP6864122B2 (ja) | 2017-05-22 | 2017-12-11 | レシピ最適化及び計測のためのゾーナル分析 |
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US (1) | US10763146B2 (ja) |
JP (1) | JP6864122B2 (ja) |
KR (1) | KR102301556B1 (ja) |
CN (1) | CN110622287B (ja) |
DE (1) | DE112017007576T5 (ja) |
TW (1) | TWI768046B (ja) |
WO (1) | WO2018217232A1 (ja) |
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US10962951B2 (en) | 2018-06-20 | 2021-03-30 | Kla-Tencor Corporation | Process and metrology control, process indicators and root cause analysis tools based on landscape information |
US11249400B2 (en) | 2018-12-14 | 2022-02-15 | Kla Corporation | Per-site residuals analysis for accurate metrology measurements |
KR20230014360A (ko) | 2021-07-21 | 2023-01-30 | 에스케이플래닛 주식회사 | 생산적 적대 신경망을 기반으로 하는 복합체 생산 레시피를 추론하기 위한 장치 및 이를 위한 방법 |
KR20230052529A (ko) | 2021-10-13 | 2023-04-20 | 에스케이플래닛 주식회사 | 오토인코더 특성 추출을 통한 복합체 특성과 복합체 생산 조건을 상호 추론하기 위한 방법 및 이를 위한 장치 |
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US7698012B2 (en) * | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US7161669B2 (en) * | 2005-05-06 | 2007-01-09 | Kla- Tencor Technologies Corporation | Wafer edge inspection |
US7570796B2 (en) | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
KR101885585B1 (ko) * | 2005-11-18 | 2018-08-07 | 케이엘에이-텐코 코포레이션 | 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템 |
JP4996856B2 (ja) * | 2006-01-23 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置およびその方法 |
US7576851B2 (en) * | 2006-03-30 | 2009-08-18 | Tokyo Electron Limited | Creating a library for measuring a damaged structure formed on a wafer using optical metrology |
US7324193B2 (en) * | 2006-03-30 | 2008-01-29 | Tokyo Electron Limited | Measuring a damaged structure formed on a wafer using optical metrology |
JP2008004863A (ja) * | 2006-06-26 | 2008-01-10 | Hitachi High-Technologies Corp | 外観検査方法及びその装置 |
US8611639B2 (en) * | 2007-07-30 | 2013-12-17 | Kla-Tencor Technologies Corp | Semiconductor device property extraction, generation, visualization, and monitoring methods |
US8254661B2 (en) | 2008-06-02 | 2012-08-28 | Applied Materials Israel, Ltd. | System and method for generating spatial signatures |
JP2012150065A (ja) | 2011-01-21 | 2012-08-09 | Hitachi High-Technologies Corp | 回路パターン検査装置およびその検査方法 |
US9177370B2 (en) * | 2012-03-12 | 2015-11-03 | Kla-Tencor Corporation | Systems and methods of advanced site-based nanotopography for wafer surface metrology |
US9064823B2 (en) | 2013-03-13 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for qualifying a semiconductor wafer for subsequent processing |
WO2016086056A1 (en) * | 2014-11-25 | 2016-06-02 | Kla-Tencor Corporation | Analyzing and utilizing landscapes |
TWI780741B (zh) * | 2016-02-24 | 2022-10-11 | 美商克萊譚克公司 | 光學計量之準確度提升 |
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- 2017-12-11 JP JP2019564033A patent/JP6864122B2/ja active Active
- 2017-12-11 KR KR1020197037472A patent/KR102301556B1/ko active IP Right Grant
- 2017-12-11 WO PCT/US2017/065629 patent/WO2018217232A1/en active Application Filing
- 2017-12-11 US US15/751,514 patent/US10763146B2/en active Active
- 2017-12-11 DE DE112017007576.9T patent/DE112017007576T5/de active Pending
- 2017-12-11 CN CN201780090469.0A patent/CN110622287B/zh active Active
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Publication number | Publication date |
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US20190088514A1 (en) | 2019-03-21 |
TW201909011A (zh) | 2019-03-01 |
CN110622287A (zh) | 2019-12-27 |
DE112017007576T5 (de) | 2020-03-05 |
CN110622287B (zh) | 2023-11-03 |
JP2020522127A (ja) | 2020-07-27 |
TWI768046B (zh) | 2022-06-21 |
KR20200000447A (ko) | 2020-01-02 |
WO2018217232A1 (en) | 2018-11-29 |
KR102301556B1 (ko) | 2021-09-13 |
US10763146B2 (en) | 2020-09-01 |
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