JP2020522127A - レシピ最適化及び計測のためのゾーナル分析 - Google Patents
レシピ最適化及び計測のためのゾーナル分析 Download PDFInfo
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- JP2020522127A JP2020522127A JP2019564033A JP2019564033A JP2020522127A JP 2020522127 A JP2020522127 A JP 2020522127A JP 2019564033 A JP2019564033 A JP 2019564033A JP 2019564033 A JP2019564033 A JP 2019564033A JP 2020522127 A JP2020522127 A JP 2020522127A
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- 238000004458 analytical method Methods 0.000 title claims abstract description 71
- 238000005259 measurement Methods 0.000 title claims abstract description 12
- 238000005457 optimization Methods 0.000 title description 14
- 238000000034 method Methods 0.000 claims abstract description 75
- 235000012431 wafers Nutrition 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000005303 weighing Methods 0.000 claims abstract description 16
- 238000005286 illumination Methods 0.000 claims description 11
- 238000005070 sampling Methods 0.000 claims description 9
- 238000004590 computer program Methods 0.000 claims description 8
- 238000013480 data collection Methods 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 3
- 230000006870 function Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 230000010365 information processing Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007123 defense Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000006399 behavior Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D18/00—Testing or calibrating apparatus or arrangements provided for in groups G01D1/00 - G01D15/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Claims (15)
- 少なくとも1個のセットアップパラメタに関しゾーナル分析を用いレシピセットアップ手順を実行するステップを有し、少なくとも1枚のウェハに亘る当該少なくとも1個のセットアップパラメタの空間変数値がそのゾーナル分析に含まれる方法。
- 請求項1に記載の方法であって、前記ゾーナル分析が前記レシピセットアップ手順のランク付けフェーズ中に適用される方法。
- 請求項1に記載の方法であって、前記ゾーナル分析が前記レシピセットアップ手順のデータ収集フェーズ中及び/又は詳細標本化フェーズ中に用いられる方法。
- 請求項1に記載の方法であって、前記少なくとも1個のセットアップパラメタに複数個のセットアップパラメタが含まれ、相異なるパラメタに係る相異なるウェハゾーンが前記ゾーナル分析に含まれる方法。
- 請求項1〜4のうちいずれか一項に記載の方法であって、前記少なくとも1個のセットアップパラメタに、感度、少なくとも1個の正確性指示子、少なくとも1個の目標品質指示子、少なくとも1個の性能指示子及び少なくとも1個のプロセス指示子のうちいずれかが含まれる方法。
- 請求項1〜5のうちいずれか一項に記載の方法であって、更に、少なくとも1個の計量指標に関し前記ゾーナル分析を用い計量計測を実行するステップを有する方法。
- 請求項1に記載の方法であって、前記少なくとも1個の計量指標に複数個の計量指標が含まれ、相異なる指標に係る相異なるウェハゾーンが前記ゾーナル分析に含まれる方法。
- 請求項6又は7に記載の方法であって、前記少なくとも1個の計量指標に、オーバレイ、残差、ツール性能パラメタ及び質指標のうちずれかが含まれる方法。
- 請求項1〜8のうちいずれか一項に記載の方法であって、少なくともウェハ中心をウェハエッジから弁別するよう構成された同心ゾーン群に関し前記ゾーナル分析が実行される方法。
- 請求項1〜8のうちいずれか一項に記載の方法であって、前記ゾーナル分析が空間連続様式にて実行される方法。
- 請求項10に記載の方法であって、可調スペクトル照明に関し前記ゾーナル分析が実行され、前記少なくとも1個のセットアップパラメタに照明波長が含まれる方法。
- 請求項1〜11のうちいずれか一項に記載の方法であって、前記ゾーナル分析が複数枚のウェハに関し実行される方法。
- 請求項1〜12のうちいずれか一項に記載の方法であって、少なくとも部分的に、少なくとも1個のコンピュータプロセッサにより実行される方法。
- 非一時的コンピュータ可読格納媒体を備え、それを以てコンピュータ可読プログラムが体現されていて、請求項1〜12のうちいずれか一項に記載の方法を実行するようそのコンピュータ可読プログラムが構成されているコンピュータプログラム製品。
- 請求項14に記載のコンピュータプログラム製品が備わる計量モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762509679P | 2017-05-22 | 2017-05-22 | |
US62/509,679 | 2017-05-22 | ||
PCT/US2017/065629 WO2018217232A1 (en) | 2017-05-22 | 2017-12-11 | Zonal analysis for recipe optimization and measurement |
Publications (3)
Publication Number | Publication Date |
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JP2020522127A true JP2020522127A (ja) | 2020-07-27 |
JP2020522127A5 JP2020522127A5 (ja) | 2021-01-28 |
JP6864122B2 JP6864122B2 (ja) | 2021-04-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2019564033A Active JP6864122B2 (ja) | 2017-05-22 | 2017-12-11 | レシピ最適化及び計測のためのゾーナル分析 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10763146B2 (ja) |
JP (1) | JP6864122B2 (ja) |
KR (1) | KR102301556B1 (ja) |
CN (1) | CN110622287B (ja) |
DE (1) | DE112017007576T5 (ja) |
TW (1) | TWI768046B (ja) |
WO (1) | WO2018217232A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10962951B2 (en) | 2018-06-20 | 2021-03-30 | Kla-Tencor Corporation | Process and metrology control, process indicators and root cause analysis tools based on landscape information |
US11249400B2 (en) | 2018-12-14 | 2022-02-15 | Kla Corporation | Per-site residuals analysis for accurate metrology measurements |
KR20230014360A (ko) | 2021-07-21 | 2023-01-30 | 에스케이플래닛 주식회사 | 생산적 적대 신경망을 기반으로 하는 복합체 생산 레시피를 추론하기 위한 장치 및 이를 위한 방법 |
KR20230052529A (ko) | 2021-10-13 | 2023-04-20 | 에스케이플래닛 주식회사 | 오토인코더 특성 추출을 통한 복합체 특성과 복합체 생산 조건을 상호 추론하기 위한 방법 및 이를 위한 장치 |
Citations (4)
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JP2005505124A (ja) * | 2001-06-19 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 半導体プロセスにおける高性能プロセス制御を行うための、動的計測の方法、システム、およびコンピュータプログラム |
JP2008004863A (ja) * | 2006-06-26 | 2008-01-10 | Hitachi High-Technologies Corp | 外観検査方法及びその装置 |
JP2009516832A (ja) * | 2005-11-18 | 2009-04-23 | ケーエルエー−テンカー テクノロジィース コーポレイション | 検査データと組み合わせて設計データを使用するための方法及びシステム |
JP2013211010A (ja) * | 2012-03-12 | 2013-10-10 | Kla-Encor Corp | ウェーハ表面計測のための高度化されたサイトベースのナノトポグラフィシステム及び方法 |
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US7161669B2 (en) * | 2005-05-06 | 2007-01-09 | Kla- Tencor Technologies Corporation | Wafer edge inspection |
US7570796B2 (en) | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
JP4996856B2 (ja) * | 2006-01-23 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置およびその方法 |
US7576851B2 (en) * | 2006-03-30 | 2009-08-18 | Tokyo Electron Limited | Creating a library for measuring a damaged structure formed on a wafer using optical metrology |
US7324193B2 (en) * | 2006-03-30 | 2008-01-29 | Tokyo Electron Limited | Measuring a damaged structure formed on a wafer using optical metrology |
US8611639B2 (en) * | 2007-07-30 | 2013-12-17 | Kla-Tencor Technologies Corp | Semiconductor device property extraction, generation, visualization, and monitoring methods |
US8254661B2 (en) | 2008-06-02 | 2012-08-28 | Applied Materials Israel, Ltd. | System and method for generating spatial signatures |
JP2012150065A (ja) | 2011-01-21 | 2012-08-09 | Hitachi High-Technologies Corp | 回路パターン検査装置およびその検査方法 |
US9064823B2 (en) | 2013-03-13 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for qualifying a semiconductor wafer for subsequent processing |
WO2016086056A1 (en) * | 2014-11-25 | 2016-06-02 | Kla-Tencor Corporation | Analyzing and utilizing landscapes |
TWI780741B (zh) * | 2016-02-24 | 2022-10-11 | 美商克萊譚克公司 | 光學計量之準確度提升 |
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2017
- 2017-12-11 JP JP2019564033A patent/JP6864122B2/ja active Active
- 2017-12-11 KR KR1020197037472A patent/KR102301556B1/ko active IP Right Grant
- 2017-12-11 WO PCT/US2017/065629 patent/WO2018217232A1/en active Application Filing
- 2017-12-11 US US15/751,514 patent/US10763146B2/en active Active
- 2017-12-11 DE DE112017007576.9T patent/DE112017007576T5/de active Pending
- 2017-12-11 CN CN201780090469.0A patent/CN110622287B/zh active Active
-
2018
- 2018-05-21 TW TW107117147A patent/TWI768046B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005505124A (ja) * | 2001-06-19 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 半導体プロセスにおける高性能プロセス制御を行うための、動的計測の方法、システム、およびコンピュータプログラム |
JP2009516832A (ja) * | 2005-11-18 | 2009-04-23 | ケーエルエー−テンカー テクノロジィース コーポレイション | 検査データと組み合わせて設計データを使用するための方法及びシステム |
JP2008004863A (ja) * | 2006-06-26 | 2008-01-10 | Hitachi High-Technologies Corp | 外観検査方法及びその装置 |
JP2013211010A (ja) * | 2012-03-12 | 2013-10-10 | Kla-Encor Corp | ウェーハ表面計測のための高度化されたサイトベースのナノトポグラフィシステム及び方法 |
Also Published As
Publication number | Publication date |
---|---|
US20190088514A1 (en) | 2019-03-21 |
TW201909011A (zh) | 2019-03-01 |
CN110622287A (zh) | 2019-12-27 |
DE112017007576T5 (de) | 2020-03-05 |
CN110622287B (zh) | 2023-11-03 |
TWI768046B (zh) | 2022-06-21 |
JP6864122B2 (ja) | 2021-04-21 |
KR20200000447A (ko) | 2020-01-02 |
WO2018217232A1 (en) | 2018-11-29 |
KR102301556B1 (ko) | 2021-09-13 |
US10763146B2 (en) | 2020-09-01 |
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