JP6763872B2 - 光電子素子及びその製造方法 - Google Patents
光電子素子及びその製造方法 Download PDFInfo
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- JP6763872B2 JP6763872B2 JP2017547963A JP2017547963A JP6763872B2 JP 6763872 B2 JP6763872 B2 JP 6763872B2 JP 2017547963 A JP2017547963 A JP 2017547963A JP 2017547963 A JP2017547963 A JP 2017547963A JP 6763872 B2 JP6763872 B2 JP 6763872B2
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- Prior art keywords
- layer
- clause
- zinc
- oxide
- solar cell
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- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000010410 layer Substances 0.000 claims description 369
- 239000011521 glass Substances 0.000 claims description 118
- 239000000463 material Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 75
- 229910001887 tin oxide Inorganic materials 0.000 claims description 59
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 57
- 239000011701 zinc Substances 0.000 claims description 53
- 230000005693 optoelectronics Effects 0.000 claims description 52
- 229910052725 zinc Inorganic materials 0.000 claims description 51
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 50
- 238000000576 coating method Methods 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 33
- 229910052718 tin Inorganic materials 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 30
- 239000011135 tin Substances 0.000 claims description 29
- 239000002105 nanoparticle Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000000605 extraction Methods 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 23
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052749 magnesium Inorganic materials 0.000 claims description 20
- 239000011777 magnesium Substances 0.000 claims description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 19
- 239000002346 layers by function Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 8
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 77
- 238000000034 method Methods 0.000 description 57
- 239000002243 precursor Substances 0.000 description 46
- 238000000151 deposition Methods 0.000 description 25
- 230000008021 deposition Effects 0.000 description 23
- 238000007740 vapor deposition Methods 0.000 description 20
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- 239000012530 fluid Substances 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 12
- 150000004706 metal oxides Chemical class 0.000 description 12
- 229910052758 niobium Inorganic materials 0.000 description 12
- 239000010955 niobium Substances 0.000 description 12
- 229910001415 sodium ion Inorganic materials 0.000 description 12
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 10
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 10
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 238000005070 sampling Methods 0.000 description 8
- 238000007751 thermal spraying Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 238000006124 Pilkington process Methods 0.000 description 6
- 230000005670 electromagnetic radiation Effects 0.000 description 6
- 239000006060 molten glass Substances 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005496 tempering Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 3
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- -1 for example Polymers 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J Tungsten(IV) chloride Inorganic materials Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical group [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000011552 falling film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000006066 glass batch Substances 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000026731 phosphorylation Effects 0.000 description 1
- 238000006366 phosphorylation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- BGRYSGVIVVUJHH-UHFFFAOYSA-N prop-2-ynyl propanoate Chemical group CCC(=O)OCC#C BGRYSGVIVVUJHH-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- PTCSYKMYHDPUDF-UHFFFAOYSA-N zinc acetyl acetate Chemical compound [Zn+2].C(C)(=O)OC(C)=O PTCSYKMYHDPUDF-UHFFFAOYSA-N 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- AGFGXVAAIXIOFZ-UHFFFAOYSA-L zinc;butanedioate Chemical compound [Zn+2].[O-]C(=O)CCC([O-])=O AGFGXVAAIXIOFZ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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Description
本発明は、エネルギー省によって授与された契約第DE−EE0004736号の下で政府の支援によりなされたものである。米国政府は、本発明に特定の権利を有し得る。
本出願は、2015年3月12日に出願された米国特許仮出願第62/131,938号に対する優先権を主張する。本出願はまた、全て2015年12月9日に出願された、米国特許出願第14/963,736号、第14/963,778号、第14/963,799号、及び第14/963,832号に対する優先権も主張する。上記出願の全ては、その全体について本明細書に参照により組み込まれる。
第1の表面14と第2の表面16とを有する第1の基板12と、第2の表面16の上に位置する下層18を備える光電子被膜17と、下層18の上の第1の導電層20と、第1の導電層20の上の上層22と、第1の導電層20の上の半導体層24と、半導体層24の上の第2の導電層26と、を備える、光電子素子10。第1の導電層20は、導電性酸化物と、タングステン、モリブデン、ニオブ、及び/又はフッ素からなる群から選択された少なくとも1つのドーパントとを備えることができる。
第1の基板12が、低濃度鉄含有ガラス12を備える、条項1の光電子素子10。
下層18が、酸化シリコンを含むナトリウムイオンバリヤー層38を備える、条項1又は2の光電子素子10。
下層18が、スズ、亜鉛、シリコン、アルミニウム、チタンの酸化物、及び/又はこれらの混合物を含む底部光学層36を備える、条項1〜3のいずれか一項の光電子素子10。
下層18が、酸化シリコンを含むナトリウムバリヤー層38と、スズ及び亜鉛の酸化物を含む底部光学層36とを備える、条項1〜4のいずれか一項の光電子素子10。
第1の導電層20が、酸化スズとタングステンとを含む、条項1〜5のいずれか一項の光電子素子10。
第1の導電層20が、酸化スズとタングステンとを含む第1の層と、酸化スズとフッ素とを含む第2の層とを備える、条項1〜6のいずれか一項の光電子素子10。
上層22が、酸化スズと、亜鉛、インジウム、ガリウム、マグネシウム、及び窒素のうち少なくとも1つとを含むバッファ層42を備える、条項1〜7のいずれか一項の光電子素子10。
上層22が、酸化スズと亜鉛とを含むバッファ層42を備える、条項1〜8のいずれか一項の光電子素子10。
上層22が、硫化カドミウム及び/又は硫酸カドミウムを含む絶縁層44を備える、条項1〜9のいずれか一項の光電子素子10。
上層22が、酸化スズと亜鉛並びに/又はマグネシウムとを含むバッファ層42と、硫化カドミウム及び/又は硫酸カドミウムを含む絶縁層44とを備える、条項1〜10のいずれか一項の光電子素子10。
半導体層24が、テルル化カドミウムを含む、条項1〜11のいずれか一項の光電子素子10。
第2の導電層26が、金属層を備える、条項1〜12のいずれか一項の光電子素子10。
第2の導電層26が、銀を備える、条項1〜13のいずれか一項の光電子素子10。
第2の導電層26の上の第2の基板28を含み、第2の基板28がガラスを備える、条項1〜14のいずれか一項の光電子素子10。
第1の基板12の第2の表面16の中に及び/又はその上に内部光抽出領域34を含む、条項1〜15のいずれか一項の光電子素子10。内部光抽出領域34は、ナノ粒子を含むことができる。
第1の基板12の第1の表面14の上の機能層32を含み、機能層32が、反射防止層33及び外部光抽出層35からなる群から選択される、条項1〜16のいずれか一項の光電子素子10。
反射防止層33が、チタン、ジルコニウム、亜鉛、スズ及びこれらの混合物からなる群から選択される酸化物材料を含む、条項17の光電子素子10。
外部光抽出層35が、シリカ、アルミナ、酸化亜鉛、チタニア、ジルコニア、酸化スズ、及びこれらの混合物からなる群から選択される、条項17又は18の光電子素子10。
第1の導電層20が、第1の前駆体材料から堆積した第1の領域と、第2の前駆体材料から堆積した第2の領域とを備える、条項1〜19のいずれか一項の光電子素子10。
第1の前駆体材料がMBTCを含み、第2の前駆体材料が、TTC及びDBTAからなる群から選択される、条項20の光電子素子10。
酸化スズ及びタングステン、好ましくはタングステンをドープされた酸化スズを含む、物品、例えば、光電子素子10のための透明な導電性酸化物層20。
少なくとも一つの注入口プレナム52、54、56と、少なくとも一つの排出口プレナム58、60とを備えているプレナム組立品48と、放出面51と、少なくとも一つの注入口プレナム52、54、56と流体連通した少なくとも一つの放出チャネル62、66、70と、少なくとも一つの排出口プレナム58、60と流体連通した少なくとも一つの排出口導管76とを備えているノズルブロック50とを備える、蒸着装置46、47。少なくとも一つの放出チャネル62、66、70は、ノズルブロック50の放出面51に対して角度を付けられている。
少なくとも一つの排出口導管76が、放出面51に対して角度を付けられている、条項23の蒸着装置46、47。
第1の放出チャネル62と流体連通した第1の注入口プレナム52と、第2の放出チャネル66と流体連通した第2の注入口プレナム54と、第3の放出チャネル70と流体連通した第3の注入口プレナム56と、を含み、放出チャネル62、66、70の少なくとも1つが、放出面51対して角度を付けられ、放出チャネル62、66、70の少なくとも1つが、放出面51に対して垂直である、条項23又は24の蒸着装置46、47。
第1の排出口導管76と流体連通した第1の排出口プレナム58と、第2の排出口導管78と流体連通した第2の排出口プレナム60とを含み、第1の排出口導管76と第2の排出口導管78とが、放出面51に対して角度を付けられている、条項23〜25のいずれか一項の蒸着装置46、47。
注入口プレナム52、54、56と放出面51との間の放出チャネル62、66、70に位置する少なくとも一つの混合チャンバ74、を含む、条項23〜26のいずれか一項の蒸着装置46、47。
排出口プレナム58、60と放出面52との間の排出口導管76、78に位置する少なくとも一つの排出口チャンバ80、を含む、条項23〜27のいずれか一項の蒸着装置46、47。
第1の放出チャネル62が、第1の放出口64を有し、第2の放出チャネル66が、第2の放出口68を有し、第3の放出チャネル70が、第3の放出口72を有し、第1の放出口64と、第2の放出口68と、第3の放出口72とが、放出面51上に位置する、条項25の蒸着装置46、47。
第1の放出チャネル62が、第1の放出口64を有し、第2の放出チャネル66が、第2の放出口68を有し、第3の放出チャネル70が、第3の放出口72を有し、第2の放出口68が、放出面51上に位置し、第1の放出口64と第3の放出口72とが、放出面51からある距離をおいて、例えば、放出面51より上で、第2の放出チャネル66と流体連通している、条項25の蒸着装置46、47。
少なくとも一つの放出チャネル62、66、70の角度が、放出面51に対して調整可能である、条項23〜30のいずれか一項の蒸着装置46、47。
ガラス製造法においてガラス基板12、112上に被膜を形成する方法であって、第1の成膜前駆体材料を、放出面51を有する蒸着装置46、47の第1の注入口プレナム52に提供するステップであって、第1の注入口プレナム52が第1の放出チャネル62と流体連通しており、第1の放出チャネル62が第1の放出経路を定めるステップと、第2の成膜前駆体材料を、蒸着装置46、47の第2の注入口プレナム54に提供するステップであって、第2の注入口プレナム54が第2の放出チャネル70と流体連通しており、第2の放出チャネル70が第2の放出経路を定めるステップと、からなり、第1の放出経路は、(a)ガラスリボン96の表面より上方、又は(b)ガラスリボン96の表面、又は(c)ガラスリボン96の表面より下方、から選択される位置で第2の放出経路と交わる、方法。
受け皿83と、ガラスリボン経路98の第1の側面106及び/又は第2の側面108に隣接して位置する少なくとも1つの蒸発式成膜装置100、102と、を備える、ドローダウン組立品。例えば、受け皿は、成形トラフ86、又は放出スロットを有する細長いトラフを備えることができる。
ガラスリボン経路98の第1の側面106及び/又は第2の側面108に隣接して位置する少なくとも一つの粒子堆積装置104を含む、条項33のドローダウン組立品81。
第2の側面108上に位置する蒸発式成膜装置100と、第1の側面106上に位置する他の蒸発式成膜装置102と、第1の側面106上の蒸発式成膜装置100の上流に位置する粒子堆積装置104と、を含む、条項33又は34のドローダウン組立品81。
ドローダウン法で成膜ガラス物品110を作製する方法であって、ガラスリボン経路98の第2の側面108に隣接して少なくとも一つの成膜装置100を位置付けることと、ガラスリボン経路98の第1の側面106に隣接して少なくとも一つの他の成膜装置102を位置付けることと、ガラスリボン96の少なくとも1つの側面上に少なくとも1つの被膜を適用するために成膜装置100、102を使用すること、を備える、方法。
少なくとも1つの成膜装置100が蒸着装置100を備える、条項36の方法。
少なくとも1つの他の成膜装置102が蒸着装置を備える、条項36又は37の方法。
第2の側面108上に位置付けられた少なくとも1つの粒子堆積装置104と、任意選択で、第1の側面106上に位置付けられた少なくとも一つの粒子堆積装置104と、を含む、条項36〜38のいずれか一項の方法。
少なくとも1つの粒子堆積装置104が、成膜装置100及び/又は成膜装置102の上流に位置付けられる、条項39の方法。
ドローダウン法によって形成される両面成膜物品110であって、第1の表面114及び対向する第2の表面116を有するガラス基板112と、第2の表面116に隣接した化学気相成長装置102によって第2の表面116上に形成された第2の被膜120と、任意選択で、第1の表面114に隣接した別の化学気相成長装置100によって第1表面114上に形成された第1の被膜118と、を備える、両面成膜物品。
光電子素子10のためのバッファ層42であって、酸化スズと、亜鉛、インジウム、ガリウム、及びマグネシウムの少なくとも1つと、を含む、バッファ層。
バッファ層42が、酸化スズ及び亜鉛を含む、条項42のバッファ層42。
バッファ層42が、酸化スズ及びマグネシウムを含む、条項42のバッファ層42。
第1の表面14及び第2の表面16を有する第1の基板12と、第2の表面16上に位置する下層18と、下層18上の第1の導電層20と、第1の導電層20上の上層22と、第1の導電層20上の半導体層24と、半導体層24上の第2の導電層26と、を備える、光電子素子10。上層18は、酸化スズと、亜鉛、インジウム、ガリウム、及びマグネシウムの少なくとも一つとを含むバッファ層42を備える。
バッファ層が、酸化スズ及び亜鉛を含む、条項45の光電子素子10。
バッファ層42が、酸化スズ及びマグネシウムを含む、条項45の光電子素子10。
基板12の第1の表面14上の機能層32、を含み、機能層32は、反射防止層33及び外部光抽出層35からなる群から選択される、条項45〜47のいずれか一項の光電子素子10。
第1の表面14上の少なくとも1つの層及び第2の表面16上の少なくとも1つの層が、ガラスリボン経路98の対向した側面に位置した少なくとも1つの成膜装置100、102、104を有するガラスドローダウン法で形成される、条項45〜48のいずれか一項の光電子素子10。
第1の導電層20は、導電性酸化物、並びにタングステン、モリブデン、ニオブ及び/又はフッ素からなる群から選択された少なくとも1つのドーパントを含む、条項45〜49のいずれか一項の光電子素子10。
第1の基板12が、低濃度鉄含有ガラスを含む、条項45〜50のいずれか一項の光電子素子10。
下層18は、酸化シリコンを含むナトリウムイオンバリヤー層38を備える、条項45〜51のいずれか一項の光電子素子10。
下層18が、スズ、亜鉛、シリコン、アルミニウム、チタン、及び/又はこれらの混合物の酸化物を含む底部光学層36を備える、条項45〜52のいずれか一項の光電子素子10。
下層18が、酸化シリコンを含むナトリウムバリヤー層38と、スズ及び亜鉛の酸化物を含む底部光学層36とを備える、条項45〜53のいずれか一項の光電子素子10。
第1の導電層20が、酸化スズ及びタングステンを含む、条項45〜54のいずれか一項の光電子素子10。
第1の導電層20が、酸化スズ及びタングステンを含む第1の層と、酸化スズ及びフッ素を含む第2の層とを備える、条項45〜55のいずれか一項の光電子素子10。
上層22が、硫化カドミウム及び/又は硫酸カドミウムを含む絶縁層44を備える、条項45〜56のいずれか一項の光電子素子10。
上層22が、酸化スズと、亜鉛及び/又はマグネシウムとを含むバッファ層42と、硫化カドミウム及び/又は硫酸カドミウムを含む絶縁層44とを備える、条項45〜57のいずれか一項の光電子素子10。
半導体層24が、テルル化カドミウムを含む、条項45〜58のいずれか一項の光電子素子10。
第2の導電層26が、金属層を備える、条項45〜59のいずれか一項の光電子素子10。
第2の導電層26が、銀を含む、条項45〜60のいずれか一項の光電子素子10。
第2の導電層26上の第2の基板28を含み、第2の基板28がガラスを備える、条項45〜61のいずれか一項の光電子素子10。
基板12の第2の表面16上の及び/又はこれに隣接した内部光抽出領域34を含み、内部光抽出領域34は、ナノ粒子40を含む、条項45〜62のいずれか一項の光電子素子10。
基板12の第1の表面14上の機能層32を含み、機能層32は、反射防止層33及び外部光抽出層35からなる群から選択される、条項45〜63のいずれか一項の光電子素子10。
反射防止層33が、チタン、ジルコニウム、亜鉛、スズ及びこれらの混合物からなる群から選択される材料の酸化物を含む、条項64の光電子素子10。
外部光抽出層35が、シリカ、アルミナ、酸化亜鉛、チタニア、ジルコニア、酸化スズ、及びこれらの混合物からなる群から選択される、条項64又は65の光電子素子10。
第1の導電層20が、第1の前駆体材料から堆積された第1の領域及び第2の前駆体材料から堆積された第2の領域を備える、条項45〜66のいずれか一項の光電子素子10。
第1の前駆体材料がMBTCを含み、第2の前駆体材料が、TTC及びDBTAからなる群から選択される、条項67の光電子素子10。
電子デバイスのための透明な導電性酸化物層20であって、タングステン、モリブデン及びニオブからなる群から選択される材料をドープされた酸化スズ層を含む、透明な導電性酸化物層。
透明な導電性酸化物層20が、酸化スズ及びタングステンを含む、条項69の透明な導電性酸化物層20。
電子デバイスが、太陽電池、有機発光ダイオード、及び発光ダイオードからなる群から選択され、好ましくは太陽電池である、条項69又は70の透明な導電性酸化物層20。
第1の表面114及び第2の表面116を有する基板112と、第1の表面114上の第1の被膜118と、第2の表面116上の第2の被膜120と、を備える、成膜物品110。第2の被膜120は、タングステン、モリブデン、及びニオブからなる群から選択される材料をドープされた酸化スズを含む第1の導電層20を備える。
第1の導電層20が、タングステンをドープされた酸化スズを備える、条項72の成膜物品110。
第1の表面114上の少なくとも1つの層及び第2の表面116上の少なくとも1つの層が、ガラスリボン経路98の対向した側面上に少なくとも1つの成膜装置100、102、104を有するガラスドローダウン法で形成される、条項72又は73の成膜物品110。
成膜物品110が、太陽電池、光起電力電池、有機発光ダイオード及び発光ダイオードからなる群から選択される、条項72〜74のいずれか一項の成膜物品110。
第2の被膜120が、第2の表面116上に位置する下層18と、下層18上の第1の導電層20と、第1の導電層20上の上層22と、第1の導電層20上の半導体層24と、半導体層24上の第2の導電層26と、を備える、条項72〜75のいずれか一項の成膜物品110。
基板112が、低濃度鉄含有ガラス12を含む、条項76の成膜物品110。
下層18は、酸化シリコンを含むナトリウムイオンバリヤー層38を備える、条項76又は77の成膜物品110。
下層18が、スズ、亜鉛、シリコン、アルミニウム、チタン、及び/又はこれらの混合物の酸化物を含む底部光学層36を備える、条項76〜78のいずれか一項の成膜物品110。
下層18が、酸化シリコンを備えているナトリウムバリヤー層38と、スズ及び亜鉛の酸化物を備えている底部光学層36とを備える、条項76〜79のいずれか一項の成膜物品110。
第1の導電層20が、酸化スズ及びタングステンを備える、条項76〜80のいずれか一項の成膜物品110。
第1の導電層20が、酸化スズ及びタングステンを含む第1の層と、酸化スズ及びフッ素を含む第2の層とを備える、条項76〜81のいずれか一項の成膜物品110。
上層22が、酸化スズと、亜鉛、インジウム、ガリウム、マグネシウム及び窒素の少なくとも1つとを含むバッファ層42を備える、条項76〜82のいずれか一項の成膜物品110。
上層22が、酸化スズ及び亜鉛を含むバッファ層42を備える、条項76〜83のいずれか一項の成膜物品110。
上層22が、硫化カドミウム及び/又は硫酸カドミウムを含む絶縁層44を備える、条項76〜84のいずれか一項の成膜物品110。
上層22が、酸化スズと、亜鉛及び/又はマグネシウムとを含むバッファ層42、並びに硫化カドミウム及び/又は硫酸カドミウムを含む絶縁層44を備える、条項76〜85のいずれか一項の成膜物品110。
半導体層24が、テルル化カドミウムを備える、条項76〜86のいずれか一項の成膜物品110。
第2の導電層26が、金属層を備える、条項76〜87のいずれか一項の成膜物品110。
第2の導電層26が、銀を含む、条項76〜88のいずれか一項の成膜物品110。
第2の導電層26上の第2の基板28を含み、第2の基板28がガラスを備える、条項76〜89のいずれか一項の成膜物品110。
基板112の第2の表面116内の及び/又はその上の内部光抽出領域34を含み、内部光抽出領域34は、ナノ粒子40を含む、条項76〜90のいずれか一項の成膜物品110。
第1の被膜118が、基板112の第1の表面114上の機能層32を含み、機能層32は、反射防止層33及び外部光抽出層35からなる群から選択される、条項76〜91のいずれか一項の成膜物品110。
反射防止層33が、チタン、ジルコニウム、亜鉛、スズ、及びこれらの混合物からなる群から選択される材料の酸化物を備える、条項92の成膜物品110。
外部光抽出層35が、シリカ、アルミナ、酸化亜鉛、チタニア、ジルコニア、酸化スズ、及びこれらの混合物からなる群から選択される、条項92又は93の成膜物品110。
第1の導電層20が、第1の前駆体材料から堆積された第1の領域及び第2の前駆体材料から堆積された第2の領域を備える、条項76〜94のいずれか一項の成膜物品110。
第1の前駆体材料がMBTCを含み、第2の前駆体材料がTTC及びDBTAからなる群から選択される、条項95の成膜物品110。
ガラスドローダウン法で、光電子素子10などの、物品110の構成を作製する方法であって、ガラスリボン経路98の第2の側面108に隣接して少なくとも1つの成膜装置100を位置付けることと、任意選択で、ガラスリボン経路98の第1の側面106に隣接して少なくとも1つの他の成膜装置102を位置付けることと、ガラスリボン96の第2の表面116上に第2の被膜120を適用することと、を備え、第2の被膜120が、(i)酸化スズと、亜鉛、インジウム、ガリウム、及びマグネシウムからなる群から選択される少なくとも1つの材料とを含むバッファ層42、並びに(ii)タングステン、モリブデン、及びニオブからなる群から選択される材料をドープされた酸化スズを含む透明な導電性酸化物層20、の少なくとも1つを備える、方法。
バッファ層42が、酸化スズ及び亜鉛を含む、条項97の方法。
バッファ層42が、酸化スズ及びマグネシウムを含む、条項97の方法。
透明な導電性酸化物層20が、タングステンをドープされた酸化スズを含む、条項97〜99のいずれか一項の方法。
放出面51と、少なくとも1つの注入口プレナム52、54、56と流体連通した少なくとも1つの放出チャネル62、66、70とを備えるノズルブロック50、を備える、蒸着装置46、47。少なくとも1つの放出チャネル62、66、70の角度は、放出面51に対して調整可能である。
第1の放出チャネル62と、第2の放出チャネル66と、第3の放出チャネル70とを含み、放出チャネル62、66、70の少なくとも1つが放出面51対して角度を付けられ、放出チャネル62、66、70の少なくとも1つが放出面51に対して垂直である、条項101の蒸着装置46、47。
第1の放出チャネル62が第1の放出口64を有し、第2の放出チャネル66が第2の放出口68を有し、第3の放出チャネル70が第3の放出口72を有し、第1の放出口64、第2の放出口66、及び第3の放出口72は、放出面51上に位置する、条項101又は102の蒸着装置46、47。
第1の放出チャネル62が第1の放出口64を有し、第2の放出チャネル66が第2の放出口68を有し、第3の放出チャネル70が第3の放出口72を有し、第2の放出口68が放出面51上に位置し、第1の放出口64及び第3の放出口72が、放出面51より上で第2の放出チャネル66と流体連通している、条項101又は102の蒸着装置46、47。
ガラス製造法においてガラス基板上に被膜層を形成する方法であって、選択された被膜層の第1の成膜領域を形成するために、選択された被膜層組成物のための第1の成膜前駆体材料を、少なくとも1つのマルチスロット成膜装置46、47に提供することと、第1の領域上に選択された被膜層の第2の成膜領域を形成するために、選択された被膜層組成物のための第2の成膜前駆体材料を、少なくとも1つのマルチスロット成膜装置46、47に提供することと、を備える、方法。第1の成膜前駆体材料は、第2の前駆体成膜材料とは異なる。
ガラス製造法は、フロートガラス法であり、少なくとも1つのマルチスロット成膜装置46、47は、フロート浴に位置している、条項105の方法。
ガラス製造法は、ガラスドローダウン法であり、少なくとも1つのマルチスロット成膜装置46、47は、ガラスリボン経路98に隣接して位置する、条項105の方法。
ガラス製造法は、第1の側面106及び第2の側面108を備えているガラスリボン経路98を有するガラスドローダウン法であり、少なくとも1つのマルチスロット成膜装置100が、ガラスリボン経路98の第2の側面108に隣接して位置し、少なくとも1つの他のマルチスロット成膜装置102が、ガラスリボン経路98の第1の側面106に隣接して位置する、条項107の方法。
ガラス製造法は、第1の側面106及び第2の側面108を備えているガラスリボン経路98を有するガラスドローダウン法であり、少なくとも1つのマルチスロット成膜装置100が、ガラスリボン経路98の第2の側面108に隣接して位置し、少なくとも1つの他のマルチスロット成膜装置102が、ガラスリボン経路98の第1の側面106に隣接して位置する、条項107の方法。
ガラス製造法においてガラス基板上に被膜を形成する方法であって、第1の放出経路を有する第1の放出チャネル62、66、70に第1の成膜前駆体材料を提供することと、第2の放出経路を有する第2の放出チャネル62、66、70に第2の成膜前駆体材料を提供することと、を備える、方法。第1の放出経路は、(a)ガラスリボン96の表面より上方、又は(b)ガラスリボン96の表面、又は(c)ガラスリボン96の表面より下方、から選択される位置で第2の放出経路と交わる。
光電子素子10が、太陽電池、発光ダイオード及び有機発光ダイオードからなる群から選択され、好ましくは太陽電池である、請求項1〜21又は45〜68のいずれか一項の光電子素子10。
Claims (11)
- 第1の表面(14)及び第2の表面(16)を有する第1のガラス基板(12)と、前記第2の表面(16)上の光電子被膜(17)とを備える太陽電池(10)であって、
前記光電子被膜(17)が、
前記第2の表面(16)上に位置付けられる下層(18)と、
前記下層(18)の上の第1の導電層(20)と、
前記第1の導電層(20)の上の上層(22)と、
前記第1の導電層(20)の上の半導体層(24)と、
前記半導体層(24)の上の第2の導電層(26)と、を備え、
(i)前記第1の導電層(20)が、酸化スズ及びタングステンを含む第1の層と、酸化スズ及びフッ素を含む第2の層とを有し、
(ii)前記上層(22)が、酸化スズと、亜鉛、インジウム、ガリウム、及びマグネシウムからなる群から選択された少なくとも1つの材料とを含むバッファ層(42)を備える、太陽電池(10)。 - 前記下層(18)が、酸化シリコンを含むナトリウムバリヤー層(38)と、スズ、亜鉛、シリコン、アルミニウム、チタン、及びこれらの混合物の少なくとも一つの酸化物を含む底部光学層(36)と、の少なくとも一方を備える、請求項1に記載の太陽電池(10)。
- 前記上層(22)が、硫化カドミウムと、硫酸カドミウムと、の少なくとも1つを含む絶縁層(44)をさらに備える、請求項1又は2に記載の太陽電池(10)。
- 前記半導体層(24)が、テルル化カドミウムを備える、請求項1〜3のいずれか一項に記載の太陽電池(10)。
- 前記第2の導電層(26)が、金属層を備える、請求項1〜4のいずれか一項に記載の太陽電池(10)。
- 前記第1のガラス基板(12)の前記第2の表面(16)上の、又は前記第2の表面(16)に隣接した、もしくは前記第2の表面(16)の上であってかつ前記第2の表面(16)に隣接した内部光抽出領域(34)を含み、前記内部光抽出領域(34)は、ナノ粒子を含む、請求項1〜5のいずれか一項に記載の太陽電池(10)。
- 前記第1のガラス基板(12)の前記第1の表面(14)上の機能層(32)を含み、前記機能層(32)が、チタン、ジルコニウム、亜鉛、スズ、及びこれらの混合物からなる群から選択された材料の酸化物を含む反射防止層(33)と、シリカ、アルミナ、酸化亜鉛、チタニア、ジルコニア、酸化スズ、及びこれらの混合物を含む外部光抽出層(35)と、の少なくとも1つを備える、請求項1〜6のいずれか一項に記載の太陽電池(10)。
- 前記第1のガラス基板(12)が、低濃度鉄含有ガラスを備え、前記下層(18)が、酸化シリコンを含むナトリウムバリヤー層(38)とスズ及び亜鉛の酸化物を含む底部光学層(36)とを備え、前記上層(22)が、亜鉛でドープされた酸化スズを含むバッファ層(42)を備え、前記半導体層(24)が、テルル化カドミウムを含み、前記第2の導電層(26)が、金属銀を含み、前記太陽電池(10)が、前記第1のガラス基板(12)の前記第2の表面(16)の上に、又はこれに隣接して、もしくはこの上であってかつこれに隣接してナノ粒子を含む内部光抽出領域(34)を備え、前記太陽電池(10)が、前記第1のガラス基板(12)の前記第1の表面(14)上の機能層(32)を備え、前記機能層(32)が、(i)チタン、ジルコニウム、亜鉛、スズ、及びこれらの混合物からなる群から選択された材料の酸化物を含む反射防止層(33)と、(ii)シリカ、アルミナ、酸化亜鉛、チタニア、ジルコニア、酸化スズ、及びこれらの混合物の少なくともいずれか1つを含む外部光抽出層(35)と、の少なくとも1つを備える、請求項1に記載の太陽電池(10)。
- 前記金属層が金属銀の層である、請求項5に記載の太陽電池(10)。
- 前記少なくとも1つの材料が、亜鉛、またはマグネシウムである、請求項1に記載の太陽電池(10)。
- 前記少なくとも1つの材料が、亜鉛である、請求項1に記載の太陽電池(10)。
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2015
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US20160268451A1 (en) | 2016-09-15 |
CN107408585A (zh) | 2017-11-28 |
US10680123B2 (en) | 2020-06-09 |
CN107408585B (zh) | 2020-05-19 |
US20200365744A1 (en) | 2020-11-19 |
US20160264458A1 (en) | 2016-09-15 |
US20160268453A1 (en) | 2016-09-15 |
JP2018509766A (ja) | 2018-04-05 |
US20200295204A1 (en) | 2020-09-17 |
US10672921B2 (en) | 2020-06-02 |
RU2673778C1 (ru) | 2018-11-29 |
EP3268998A1 (en) | 2018-01-17 |
US10672920B2 (en) | 2020-06-02 |
US9818888B2 (en) | 2017-11-14 |
BR112017019432A2 (pt) | 2018-04-24 |
MX2017011719A (es) | 2018-01-30 |
US20160268457A1 (en) | 2016-09-15 |
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