CN103270606A - 用于光伏模块的密封件 - Google Patents
用于光伏模块的密封件 Download PDFInfo
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- CN103270606A CN103270606A CN2011800469536A CN201180046953A CN103270606A CN 103270606 A CN103270606 A CN 103270606A CN 2011800469536 A CN2011800469536 A CN 2011800469536A CN 201180046953 A CN201180046953 A CN 201180046953A CN 103270606 A CN103270606 A CN 103270606A
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- 239000000565 sealant Substances 0.000 claims description 118
- 238000000034 method Methods 0.000 claims description 47
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229920001971 elastomer Polymers 0.000 claims description 6
- 230000001154 acute effect Effects 0.000 claims description 5
- 230000033001 locomotion Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229920005549 butyl rubber Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 116
- 238000007514 turning Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000003973 paint Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VXAPDXVBDZRZKP-UHFFFAOYSA-N nitric acid phosphoric acid Chemical compound O[N+]([O-])=O.OP(O)(O)=O VXAPDXVBDZRZKP-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- -1 nitrile compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10165—Functional features of the laminated safety glass or glazing
- B32B17/10293—Edge features, e.g. inserts or holes
- B32B17/10302—Edge sealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
一种密封件包括在光伏模块中以提高可靠性和耐久性。密封剂沿模块层中的一个的周围沿路径(705)从管口(305)分布。管口路径包括位于拐角区域的锐角。
Description
技术领域
本发明涉及一种用于光伏模块的密封件、用于制造光伏模块的方法以及用于制造密封件的方法。
背景技术
光伏模块可以包括基底层和超基底层。为了使基底层结合到超基底层,可以在所述层之间增加密封剂层。通过提高密封剂层的质量,可以通过对水分进入和层离提供更大的防护来提高模块的耐久性和可靠性。
附图说明
图1是光伏模块的分解视图。
图2是密封剂涂覆过程的透视图。
图3是示出重叠的已知的密封剂层和新的密封剂层的俯视图。
图4是已知的管口路径和已知的密封剂层的俯视图。
图5是已知的管口路径和已知的密封剂层的俯视图。
图6是具有已知的密封剂层的光伏模块的透视图。
图7是新的管口路径和新的密封剂层的俯视图。
图8是新的管口路径和新的密封剂层的俯视图。
图9是具有新的密封剂层的光伏模块的透视图。
图10是光伏电池的剖视侧面图。
图11是示出用于制造光伏模块的方法的流程图。
图12是示出利用光伏模块产生电流的方法的流程图。
具体实施方式
为了防止水分进入光伏模块,密封剂层可以被涂覆在模块的周边附近。具体地说,密封剂层可以嵌入在超基底层和基底层之间。密封剂层可以用作超基底层和基底层之间的粘合剂。然而,随着时间流逝,密封剂层会在将超基底层结合到基底层方面失效。例如,由于场内的热循环,靠近密封层处会发生超基底和基底的层离。由于层离可能导致模块的过早损坏,因此层离是不希望的。为了提高层之间的结合并避免层离,已经开发出一种新的光伏模块以及制造光伏模块和密封剂层的方法,在此对它们进行阐述。
一方面,一种用于制造光伏模块的方法可以包括:提供包括周边和四个拐角区域的第一层。所述方法还可以包括:随着管口沿靠近第一层的周边的管口路径移动,通过管口分配密封剂来与第一层相邻地形成密封剂层。管口路径在所述四个拐角区域的每个拐角区域可以包括锐角。所述方法还可以包括形成与密封层相邻的第二层。密封剂可以包括内边缘和外边缘。外边缘可以与第一层的周边基本上平行。密封剂层的外边缘可以距离第一层的周边大约0mm到大约6mm。第一层可以是超基底层,第二层可以是基底层。选择性地,第一层可以是基底层,第二层可以是超基底层。密封剂层可以包括可流动橡胶。可流动橡胶可以包括丁基橡胶。所述方法可以包括在分配密封剂之前加热密封剂。可以将密封剂加热到大约100℃到大约200℃的温度。优选地,可以将密封剂加热到大约150℃到大约175℃的温度。管口可以以大约0.1英尺/秒到大约2.0英尺/秒的速度沿管口路径行进。优选地,管口可以以大约0.5英尺/秒到大约1.0英尺/秒的速度沿管口路径行进。可以以大约0.1立方英寸/秒到大约2.0立方英寸/秒的流速分配密封剂。优选地,可以以大约0.15立方英寸/秒到大约0.3立方英寸/秒的流速分配密封剂。
另一方面,一种用于形成密封剂层的方法可以包括:提供包括周边和四个拐角区域的表面。所述方法还可以包括:随着管口沿靠近所述表面的周边的管口路径移动,通过管口分配密封剂来与所述表面相邻地形成密封剂层。管口路径在所述四个拐角区域的每个拐角区域可以包括锐角。密封剂层可以包括内边缘和外边缘,外边缘可以与所述表面的周边基本上平行。密封剂层的外边缘可以距离所述表面的周边大约0mm到大约6mm。密封剂可以包括可流动橡胶。所述方法可以包括在分配密封剂之前加热密封剂。可以将密封剂加热到大约100℃到大约200℃的温度。管口可以以大约0.1英尺/秒到大约2.0英尺/秒的速度沿管口路径行进。可以以大约0.1立方英寸/秒到大约2.0立方英寸/秒的流速分配密封剂。
如图1中所示,光伏模块200可以包括光学透明超基底层215。多个太阳能电池205可以与超基底层215相邻地形成。密封剂层220可以形成在超基底层215和基底层210之间,其中,基底层210用作用于保护模块200的后盖。密封剂层220可以将基底210结合到超基底215,并且用作保护多个太阳能电池205不受水分和碎屑影响的屏障。
密封剂层220可以设置在超基底层210的周边和基底层215的周边之间。在涂覆期间,密封剂层220可以如图2中所示地涂覆到超基底层215。例如,可以将密封剂层220涂覆到超基底层215,然后可以将基底层210对着密封剂层215放置。选择性地,密封剂层220可以涂覆到基底层210。例如,可以将密封剂层220涂覆到基底层210,然后可以将超基底层215对着密封剂层220放置。
密封剂层220可以提供合适的粘合性能,同时还对暴露到紫外线所造成的退化具有抵抗作用。可以在室温下涂覆密封剂层,或者可以在涂覆之前加热密封剂层,以降低粘度并且提高流过管口305的流速,如图2中所示。例如,可以将密封剂加热到大约100到大约200的温度。优选地,可以将密封剂加热到大约150到大约175的温度。可以在进入管口之前、在管口中时或者在二者结合的情况下加热密封剂。密封剂层220可以是任何合适的材料,诸如,(例如)聚异戊二烯、硅树脂、聚氨酯、聚硫化物、丁苯橡胶(SBR)、亚克力或聚丙烯酸酯、异戊二烯、聚异丁烯、乙烯树脂或者腈类化合物。
如图2中所示,管口305可以用于涂覆密封剂层220。管口305可以包括具有任何适于分配密封剂的形状的孔。例如,可以将孔的形状设计为分配具有如图3中所示的管的形状或带状的形状的密封剂层220。管口305可以人工控制,或者管口305可以附着到计算机控制的自动涂布机310。管口305可以围绕基底层或超基底层(210,215)的周边分配连续的密封剂珠,以形成密封剂层220。可以以大约0.1立方英寸/秒到大约2.0立方英寸/秒的流速分配密封剂。优选地,可以以大约0.15立方英寸/秒到大约0.3立方英寸/秒的流速分配密封剂。在分配工艺期间,管口可以相对于目标层以大约0.1英尺/秒到大约2.0英尺/秒的速度行进。优选地,管口可以以大约0.5英尺/秒到大约1.0英尺/秒的速度行进。
自动涂布机310可以程控为使管口305围绕超基底层215的周边250移动并且分配连续的密封剂珠。当靠近周边250分配密封剂时,管口305可以程控为在密封剂层220的外边缘221和超基底层215的周边250之间留有间隙240。间隙240可以在大约0mm到大约6mm的范围内。优选地,间隙可以在大约1mm到大约2mm的范围内。在装配模块200时,间隙240提供当将密封剂层层压在基底层210和超基底层250之间时用于密封剂流动的区域。结果,密封剂不溢出周边250,因此可以避免后续的边缘清理步骤。
为了示出已知的工艺和新的工艺之间的区别,图3示出重叠的已知的密封剂层和新的密封剂层。已知的密封剂层的拐角以虚线示出并且由下面在图4和图5中示出的已知的管口路径405创建。相反地,以实线示出的新的密封剂层由下面在图7和图8中示出的新的管口路径705创建。两个阴影区域(1005,1010)突出了得到的密封剂层之间的不同。例如,第一阴影区域1005示出了如何通过下面的新的管口路径705改善拐角覆盖。第二阴影区域1010示出了新的管口路径如何使密封剂更少地侵入到基底层或超基底层的内表面区域1015中。由于更少地入侵,多个电池205可以定位为更靠近密封剂层220,由此在具有相同的外形尺寸的模块内留有更多的有效区域。虽然图3示出了在多个电池205的外周边和密封剂层220的内边缘222之间的敞开的区域,但是这不是限制性的。例如,密封剂层可以与多个电池205的外边缘邻接或叠置。
如图4和图5中所示,已知的涂覆密封剂的方法跟随已知的管口路径405。管口路径405由虚线示出。当跟随已知的管口路径405时,管口305按直线行进,当到达拐角时,管口305逆时针旋转90度,同时其行进的方向也逆时针旋转90度。结果,在拐角附近密封剂呈弧形分配。在图4中,示出了七个示例性管口位置(例如410、415)。管口路径405与沿着管口路径405的每个管口位置的中点相交。
如图5中所示,在靠近第一拐角转90度时,管口405按直线继续行进直到管口405到达下一个拐角,管口405在所述下一个拐角处如上所述地再次逆时针旋转90度。在围绕基底层或超基底层的周边行进时,密封剂层220如图5中所示地创建。可惜的是,由于管口305在靠近四个拐角的每个拐角处画弧,因此密封剂未分布到超基底层或基底层的拐角区域505处。结果,应该用于结合的表面区域被闲置。为了进一步示出这一点,图6示出了密封剂层220未延伸到基底层或超基底层的拐角区域505的模块200的透视图。除了形成弱的结合之外,由于水可能进入拐角空隙并且结冰从而引起模块的层之间的层离,因此图6中示出的结构是不期望的。此外,基底层和超基底层的拐角在没有密封剂层的支撑处会易于损坏。因此,期望的是,在制造工艺中不增加任何额外的步骤的情况下将密封剂添加到拐角区域505,因为额外的步骤会增加工艺成本以及工艺复杂性。
图7和图8描绘了新的管口路径705。具体地说,图7示出管口路径705靠近目标层(例如,210,215)的一个拐角的细节。管口路径705由短划线描绘。当管口305跟随管口路径705时,在制造工艺中没有增加任何额外的步骤的情况下,密封剂分布到层的拐角区域。密封剂层220形成有内边缘222和外边缘221。虽然在此针对逆时针行进路径描述了管口路径705,但是还可以使用顺时针行进路径或者逆时针行进路径和顺时针行进路径的结合。
为了示出分配工艺,沿管口路径705示出了示例性管口位置(例如,710、715)。管口路径705限定为与每个管口位置(例如,710、715)的中点相交的路径。管口首先沿直路径740朝着拐角区域505行进。随着管口迫近拐角区域505,管口305开始逆时针旋转。同时,管口路径705沿弧形路径745朝着拐角区域505偏离其直路径740。在逆时针旋转45度并且进入拐角区域505时,在沿第二直路径755继续行进之前,管口305从拐角区域505退出并且沿第二弧形路径750行进。第二直路径与当迫近拐角区域505时行进的直路径基本上垂直。如图8中所示,管口路径705具有类似于矩形的形状。然而,管口路径与矩形不同,因为管口路径705的拐角是锐角而不是直角。
在围绕基底层或超基底层的整个周边行进时,密封剂层220如图8中所示地形成,其中,密封剂朝着基底层或超基底层的拐角区域延伸。如上面所看到的,密封剂层220可以具有外边缘221和内边缘222。如图8中所示,密封剂层220的外边缘222可以大致呈矩形。换言之,密封剂层220的外拐角具有很小的弧形角或者没有弧形角,从而当与图5中示出的密封剂层的圆形的拐角相比时,密封剂层的外拐角近乎是直角。
图9示出使用了新的管口路径705的包括新的密封剂层220的模块200。不同于图5中示出的模块,图9中的模块200没有拐角空隙。结果,提高了基底层215和超基底层210之间的结合,并且模块200不易受影响而层离和损坏。
图1示出包含多个光伏电池的简单示例的光伏模块200。为了提供关于电池的更多细节,图10描绘了示例光伏电池的剖视图。具体地说,光伏电池100可以包括形成在超基底110上的抗反射涂料105。抗反射涂料105可以设计为减少反射并且增加透射。例如,如果涂料的厚度为相对于入射光子的波长的大致四分之一波长,则反射被最小化。由于CdTe的频带隙能量为1.48eV,因此抗反射涂料105的厚度可以为大约0.15微米。抗反射涂料105可以包含,例如,氧化铝、二氧化钛、氧化镁、一氧化硅、二氧化硅或者五氧化二钽。由于抗反射涂料仅优化单一波长的透射,因此可以期望修饰超基底110的表面,以提高整体透射。例如,可以在涂覆抗反射涂料105之前将超基底110纹理化,以提高光俘获。
超基底110可以由诸如碱石灰玻璃的光学透明材料形成。由于玻璃超基底的质量和洁净度可以对装置的性能产生显著影响,因此可以期望利用氧化铈粉末抛光玻璃以增加透射。阻挡层112可以与超基底110相邻地形成,以减少来自超基底110的钠或其它污染物的扩散。阻挡层112可以包括二氧化硅或任何其它合适的材料。
透明导电氧化物(TCO)层115可以形成在阻挡层112和缓冲层120之间,并且可以用作光伏装置的前接触(front contact)。在形成TCO层115的过程中,期望使用高导电率和高透明度二者的材料。例如,TCO层115可以包括氧化锡、锡酸镉或者氧化铟锡。为了进一步提高透明度,TCO层115可以为大约1微米厚。如果使用锡酸镉,则锡酸镉的涂覆可以通过将氧化镉与二氧化锡以2∶1的比率混合并且使用射频磁控溅射将混合物沉积到超基底110上来实现。缓冲层118可以形成在TCO层115和n型窗口层120之间,以减少在形成n型窗口层期间发生不均匀的可能性。
n型窗口层120可以包括非常薄的硫化镉层。例如,n型窗口层120可以为0.1微米厚并且可以使用任何合适的薄膜沉积技术沉积。例如,可以使用金属有机化学气相沉积(MOCVD)沉积n型窗口层120。为了降低n型窗口层120的表面粗糙度,可以将n型窗口层120在大约400摄氏度下退火大约20分钟。退火工艺可以通过减少缺陷而改善n型窗口层120和CdTe层125之间的边界。通过减少缺陷并且改善边界,提高了光伏装置的效率。
p型吸收层125可以与n型窗口层120相邻地形成并且可以包括碲化镉。p型吸收层125可以使用任何合适的沉积方法沉积。例如,可以使用常压化学气相沉积(APVCD)、溅射、原子层外延(ALE)、激光烧蚀、物理气相沉积(PVD)、近间隔升华(CSS)、电沉积(ED)、丝网印刷(SP)、喷涂或MOVCD来沉积p型吸收层125。在沉积之后,可以在氯化铬的存在下在大约420摄氏度的温度下热处理p型吸收层125大约20分钟,由此提高晶粒生长并且减少少数载流子的晶界俘获效应。通过减少p型吸收层125内的俘获效应,增加了开路电压。
p-n结122在p型吸收层125与n型窗口层120接触处形成。p-n结122包括耗尽区,其特征在于,在结的n型侧上缺失电子并且在结的p型侧上缺失空穴(即,电子空缺)。耗尽区的宽度等于位于p型侧上的扩散深度和位于n型侧上的扩散深度的和。电子和空穴的相应的缺失由电子从n型窗口层120扩散到p型吸收层125并且空穴从p型吸收层125扩散到n型窗口层120而引起。作为扩散过程的结果,正供体离子形成在n型侧上,负受体离子形成在p型侧上。正供体离子可以是锁在硅晶格中的已经转移出电子的磷原子,负受体离子可以是锁在硅晶格中的已经获得电子的硼原子。在正离子区域附近的负离子区域的存在建立了穿过p-n结122的内置电场。当将光伏装置100暴露于日光下时,在结区域内吸收光子。结果,产生了光生电子-空穴对。通过内置电场影响电子-空穴对的运动,这使电流流动产生。在附着到TCO层115的第一端子116和附着到背接触(back contact)130的第二端子131之间发生电流流动。
背接触130可以与p型吸收层125相邻地形成。背接触130可以是在整个温度循环中与p型吸收层125维持良好接触的低电阻欧姆接触。为了确保接触的稳定性,p型吸收层125的后表面可以利用硝酸-磷酸(NP)蚀刻,以在后表面上产生元素Te的层,背接触130可以覆盖p型吸收层125的整个后表面。背接触130可以包括通过蒸发涂覆的铝,随后退火。选择性地,背接触130可以包括钼或者任何其它合适的低电阻的材料。
形成在超基底层110和基底层140之间的各种层可以通过夹层135覆盖。例如,如图10中所示,夹层135可以覆盖TCO层、缓冲层、n型窗口层、p型吸收层和背接触130。如果光伏装置物理性损坏,则夹层135可以防止水分和水进入这些层并且提供了对潜在有害物质的遏制。例如,夹层135可以包括诸如乙烯-醋酸乙烯酯(EVA)的高分子材料,但是可以使用任何其它合适的材料。为了形成夹层135,可以将先前形成的层与EVA片进行层压。
如上所述的,密封剂层145可以围绕夹层135的周边形成。最后,基底140可以与夹层135相邻地形成,并且还可以保护装置的后侧。例如,保护型后基底140可以包括诸如碱石灰玻璃、塑料、碳纤维或树脂的任何合适的材料。
如图11中所示,用于制造光伏模块的方法可以包括步骤1105:提供光伏模块的第一层。第一层可以是基底层或超基底层。另外,第一层可以是光学透明材料,诸如碱石灰玻璃。所述方法还可以包括步骤1110:通过沿如图7和图8所示的管口路径从管口分配密封剂来形成与第一层相邻的密封剂层。所述方法还可以包括步骤1115:形成与密封剂层相邻的第二层。第二层可以是基底层或超基底层。另外,第二层可以是光学透明材料,诸如碱石灰玻璃。
如图12中所示,用于产生电流的方法可以包括步骤1205:照射光伏模块以产生光电流。所述方法还可以包括步骤1210:从光伏模块收集光电流。“收集”可以指的是储存电流或者使用电流。例如,“收集”可以指的是在诸如电池的储存装置中储存电流。选择性地,“收集”可以指的是使用电流以对电力负载供电。
在附图和说明书中阐述了一个或更多实施例的细节。其它特征、目的和优点通过说明书、附图和权利要求将是明显的。虽然已经描述了本发明的一些实施例,但是将理解的是,在不脱离本发明的精神和范围的情况下,可以进行各种修改。具体地说,图中描绘的步骤可以按照与描绘的顺序不同的顺序执行。例如,步骤可以同时地执行或者可以按照与这些描述的顺序交替的顺序执行。还应该理解的是,附图不必按照比例,附图在某种程度上简单地描绘了本发明的各种特征和基本原理。
Claims (21)
1.一种用于制造光伏模块的方法,所述方法包括:
提供包括周边和四个拐角区域的第一层;
随着管口沿邻近第一层的周边的管口路径移动,通过管口分配密封剂来形成与第一层相邻的密封剂层,其中,管口路径在所述四个拐角区域的每个拐角区域包括锐角;
形成与密封层相邻的第二层。
2.如权利要求1所述的方法,其中,密封剂包括内边缘和外边缘,其中,外边缘与第一层的周边基本上平行。
3.如权利要求2所述的方法,其中,密封剂层的外边缘距离第一层的周边大约0mm到大约6mm。
4.如权利要求1所述的方法,其中,第一层是超基底层,其中,第二层是基底层。
5.如权利要求1所述的方法,其中,第一层是基底层,其中,第二层是超基底层。
6.如权利要求1所述的方法,其中,密封剂层包括可流动橡胶。
7.如权利要求6所述的方法,其中,可流动橡胶包括丁基橡胶。
8.如权利要求1所述的方法,所述方法还包括在分配密封剂之前加热密封剂。
9.如权利要求8所述的方法,其中,将密封剂加热到大约100℃到大约200℃的温度。
10.如权利要求8所述的方法,其中,将密封剂加热到大约150℃到大约175℃的温度。
11.如权利要求1所述的方法,其中,管口以大约0.1英尺/秒到大约2.0英尺/秒的速度沿管口路径行进。
12.如权利要求1所述的方法,其中,管口以大约0.5英尺/秒到大约1.0英尺/秒的速度沿管口路径行进。
13.如权利要求1所述的方法,其中,以大约0.1立方英寸/秒到大约2.0立方英寸/秒的流速分配密封剂。
14.如权利要求1所述的方法,其中,以大约0.15立方英寸/秒到大约0.3立方英寸/秒的流速分配密封剂。
15.一种用于形成密封剂层的方法,所述方法包括:
提供包括周边和四个拐角区域的表面;
随着管口沿邻近所述表面的周边的管口路径移动,通过管口分配密封剂来形成与所述表面相邻的密封剂层,其中,管口路径在所述四个拐角区域的每个拐角区域包括锐角。
16.如权利要求15所述的方法,其中,密封剂层包括内边缘和外边缘,其中,外边缘与所述表面的周边基本上平行。
17.如权利要求16所述的方法,其中,密封剂层的外边缘距离所述表面的周边大约0mm到大约6mm。
18.如权利要求15所述的方法,其中,密封剂包括可流动橡胶。
19.如权利要求1所述的方法,所述方法还包括在分配密封剂之前加热密封剂,其中,将密封剂加热到大约100℃到大约200℃的温度。
20.如权利要求15所述的方法,其中,管口以大约0.1英尺/秒到大约2.0英尺/秒的速度沿管口路径行进。
21.如权利要求15所述的方法,其中,以大约0.1立方英寸/秒到大约2.0立方英寸/秒的流速分配密封剂。
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US5645667A (en) * | 1995-02-16 | 1997-07-08 | Mercedes-Benz Ag | Method for applying a viscous material edge strip to a corner area surface |
JPH11107643A (ja) * | 1997-09-30 | 1999-04-20 | Asahi Glass Co Ltd | 樹脂部材付き板状体およびその製造方法 |
CN1812941A (zh) * | 2003-06-25 | 2006-08-02 | 横滨橡胶株式会社 | 多层玻璃的衬垫成形方法 |
US20090320921A1 (en) * | 2008-02-01 | 2009-12-31 | Grommesh Robert C | Photovoltaic Glazing Assembly and Method |
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CA1280568C (fr) * | 1984-07-10 | 1991-02-26 | Karl Lenhardt | Preparation d'une matiere plastique en vue de son extrusion notamment sous la forme d'un cordon calibre destine a servir de joint et d'intercalaire dans des vitrages multiples |
US6086813A (en) * | 1997-09-23 | 2000-07-11 | Brunswick Corporation | Method for making self-supporting thermoplastic structures |
US6928728B2 (en) * | 2002-08-08 | 2005-08-16 | Badger Meter, Inc. | Meter register with water vapor seal |
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US5645667A (en) * | 1995-02-16 | 1997-07-08 | Mercedes-Benz Ag | Method for applying a viscous material edge strip to a corner area surface |
JPH11107643A (ja) * | 1997-09-30 | 1999-04-20 | Asahi Glass Co Ltd | 樹脂部材付き板状体およびその製造方法 |
CN1812941A (zh) * | 2003-06-25 | 2006-08-02 | 横滨橡胶株式会社 | 多层玻璃的衬垫成形方法 |
US20090320921A1 (en) * | 2008-02-01 | 2009-12-31 | Grommesh Robert C | Photovoltaic Glazing Assembly and Method |
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