JP6748144B2 - 物質変化による固体分離 - Google Patents
物質変化による固体分離 Download PDFInfo
- Publication number
- JP6748144B2 JP6748144B2 JP2018090077A JP2018090077A JP6748144B2 JP 6748144 B2 JP6748144 B2 JP 6748144B2 JP 2018090077 A JP2018090077 A JP 2018090077A JP 2018090077 A JP2018090077 A JP 2018090077A JP 6748144 B2 JP6748144 B2 JP 6748144B2
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- JP
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- Prior art keywords
- solid
- modification
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- laser beam
- laser
- Prior art date
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Dicing (AREA)
Description
2 剥離領域
4 レーザー光線
5 研磨表面
6 固体中のレーザー光線
7 固体下面
8 焦点
9 改質
10 第1の固体部分
11 固体層
12 第2の固体部分
13 亀裂
14 加工開始位置
15 改質中心
17 基準長さ
18 主表面
25 第1の亀裂部分
27 第2の亀裂部分
28 第3の亀裂部分
29 第4の亀裂部分
30 回転テーブル
31 外縁と第1の改質ブロックとの間の亀裂
32 2つの改質ブロック間の亀裂
33 改質ブロックと他の改質ブロック又は外縁との間の亀裂
34 改質ブロックと外縁との間の亀裂
40 光学系
41 改質ブロックがない第1領域
42 改質ブロックがない第2領域
43 改質ブロックがない第3領域
44 改質ブロックがない第4領域
45 改質ブロックがない第5領域
51 変化していない物質
52 変化した物質
53 ラマンスペクトル
54 強度(%)
56 波長(cm-1)
61 変化していない物質部分のグラフ
62 変化した物質部分のグラフ
65 第1の配向元素
66 第2の配向元素
67 第3の配向元素
68 第4の配向元素
69 センサー手段
75 データ記憶素子及び/又はデータ伝達素子
76 溝
77 液体導入部
78 液体導管
79 液体排出部
80 ガイド‐支持‐構造
71 亀裂部分の第1の端部
72 亀裂部分の第2の端部
91 改質の第1ブロック
92 改質の第2ブロック
112 第2の固体層
113 第3の固体層
140 受容層
150 温度制御液体
161 受容層の変形方向
300 結合層
630 ビームウェスト
632 ビームウェスト
400 スキャナ
401 レーザー光源
402 レーザー光線導管
403 更なるレーザー光線導管
501 第1の固体層の露出表面
502 第2の固体層のレーザー入射表面
503 第2の固体層の露出表面
504 第3の固体層のレーザー入射表面
505 第3の固体層の露出表面
606 光線
608 光学系
610 第1の偏向部材
612 第2の偏向部材
613 第3の偏向部材
616 第1の光線部分
618 第2の光線部分
620 焦点
622 第1の表面部分
624 第2の表面部分
630 ビームウェスト
632 ビームウェスト
901 改質のない第1の領域
902 改質のない第2の領域
903 改質のない第3の領域
Claims (20)
- 固体から少なくとも1つの固体部分を分離する方法であって、
レーザー光線によって前記固体の結晶格子を改質する工程を少なくとも含み、
前記結晶格子において複数の改質が引き起こされ、
前記結晶格子は、前記改質の結果、該改質を囲む領域で少なくともそれぞれ1つの部分において、そこから亀裂を生じ、
前記改質の領域における前記亀裂によって剥離領域が定められ、
前記レーザー光線は、研磨された表面を通って少なくとも部分的に透明な前記固体に入射し、
複数の前記亀裂は未臨界であり、かつ、前記固体内におけるその広がりは5mmよりも小さく、
複数の前記未臨界の亀裂の大部分が、前記レーザー光線が入射する前記固体の表面に平行な平面に広がり、
前記固体は炭化ケイ素を含むか若しくは炭化ケイ素からなり、
前記固体はインゴットであり、
前記固体は前記剥離領域に沿って少なくとも2つの部分に分離され、
前記剥離領域は、前記改質の一側において前記固体の長さ方向に位置し、前記研磨された表面が前記改質の反対側に位置する、
ことを特徴とする方法。 - 固体から少なくとも1つの固体部分を分離する方法であって、
レーザー光線によって前記固体の結晶格子を改質する工程を少なくとも含み、
前記結晶格子において複数の改質が引き起こされ、
前記結晶格子は、前記改質の結果、該改質を囲む領域で少なくともそれぞれ1つの部分において、そこから亀裂を生じ、
前記改質の領域における前記亀裂によって剥離領域が定められ、
前記レーザー光線は、研磨された表面を通って少なくとも部分的に透明な前記固体に入射し、
複数の前記亀裂は未臨界であり、かつ、前記固体内におけるその広がりは5mmよりも小さく、
複数の前記未臨界の亀裂の大部分が、前記レーザー光線が入射する前記固体の表面に平行な平面に広がり、
前記固体は炭化ケイ素を含むか若しくは炭化ケイ素からなり、
前記固体はインゴットであり、
前記固体は前記剥離領域に沿って少なくとも2つの部分に分離され、
前記レーザー光線のエネルギーは、少なくとも1つの方向における前記固体における物質変化が、レイリー長の3倍より小さくなるように選ばれる、
ことを特徴とする方法。 - 前記亀裂は、実質的に水平方向に延びている、
請求項1又は2の方法。 - 前記亀裂は、異なる平面上に延び得る、
請求項1乃至3のいずれかの方法。 - 前記レーザー光線によって発生した前記改質が結晶幾何学的配向に適合するように、前記インゴットの配向が利用される、
請求項1乃至4のいずれかの方法。 - 前記剥離領域が或る定義された形状をなすように、前記未臨界の亀裂が1つの層において定義された形態で広がる、
請求項1乃至5のいずれかの方法。 - 前記結晶格子は、各改質の中心Zから離れている部分において少なくとも大部分の亀裂を生じる、
請求項1乃至6のいずれかの方法。 - 前記改質は、前記固体から固体層の分離により残存固体の部分から完全に取り除かれる、
請求項1乃至7のいずれかの方法。 - 前記残存固体は、前記固体層の分離後に前記改質の残りを示さない、
請求項8の方法。 - 前記レーザー光線の波長は、固体の線吸収が0.1cm-1未満になるように選ばれる、
請求項1乃至9のいずれかの方法。 - 前記レーザー光線のパルス繰り返し周波数が16kHz以上20MHz以下である、
請求項1乃至10のいずれかの方法。 - 前記レーザー光線は、100nJ/μm2以上10000nJ/μm2以下のパルス密度で前記固体に入射される、
請求項1乃至10のいずれかの方法。 - 前記レーザー光線は、回折する光学部材によって複数のレーザー光線に分離され、該レーザー光線の分離によってそれに対応する数の改質が発生される、
請求項1乃至12のいずれかの方法。 - 前記レーザー光線の焦点は、前記固体の入射面から1000μm未満離れており、少なくとも個々の光線部分が該入射面を介して前記固体に入射して物理的な改質を生成する、
請求項1乃至13のいずれかの方法。 - 前記複数の改質の配置に加えて又はその代わりに、焦点及び/又はエネルギー量及び/又は照射時間が異なるように設定される、
請求項1乃至14のいずれかの方法。 - 制御ユニットにより、前記固体の材料特性に依存して、前記改質の発生を制御する、
請求項1乃至15のいずれかの方法。 - 前記レーザー光線を焦点合わせするための光学装置は、0.1以上0.9以下の開口数を有する、
請求項1乃至16のいずれかの方法。 - 前記改質は、50μm未満の垂直な広がりを有する、
請求項1乃至17のいずれかの方法。 - ピコ秒レーザーを使用し、前記レーザー光線が800nm以上1200nm以下の波長を持つ、
請求項1乃至18のいずれかの方法。 - 前記レーザー光線は物質変化を引き起し、該物質変化の結果として無定形相が生じる、
請求項1乃至19のいずれかの方法。
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KR20220058670A (ko) | 2022-05-09 |
EP3399542B1 (de) | 2023-04-12 |
JP6396505B2 (ja) | 2018-09-26 |
KR20200006641A (ko) | 2020-01-20 |
EP4122633A1 (de) | 2023-01-25 |
US11407066B2 (en) | 2022-08-09 |
EP3666445B1 (de) | 2022-10-19 |
KR20170086644A (ko) | 2017-07-26 |
WO2016083610A2 (de) | 2016-06-02 |
US11833617B2 (en) | 2023-12-05 |
JP2017526161A (ja) | 2017-09-07 |
EP3666445A1 (de) | 2020-06-17 |
EP3399542A1 (de) | 2018-11-07 |
EP3395489B1 (de) | 2024-06-19 |
KR20180059569A (ko) | 2018-06-04 |
CN108857049A (zh) | 2018-11-23 |
CN108838562B (zh) | 2021-08-17 |
CN108838562A (zh) | 2018-11-20 |
SG11201704275UA (en) | 2017-06-29 |
EP3223993A2 (de) | 2017-10-04 |
JP2018152582A (ja) | 2018-09-27 |
US20240058899A1 (en) | 2024-02-22 |
US20180290232A1 (en) | 2018-10-11 |
EP3395489A1 (de) | 2018-10-31 |
KR102587022B1 (ko) | 2023-10-10 |
MY174094A (en) | 2020-03-09 |
WO2016083610A3 (de) | 2016-09-22 |
US20180126484A1 (en) | 2018-05-10 |
KR20230145246A (ko) | 2023-10-17 |
KR101864558B1 (ko) | 2018-06-04 |
CN107107260B (zh) | 2022-02-11 |
CN107107260A (zh) | 2017-08-29 |
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