JP6722736B2 - 焼結体および、スパッタリングターゲット - Google Patents
焼結体および、スパッタリングターゲット Download PDFInfo
- Publication number
- JP6722736B2 JP6722736B2 JP2018177651A JP2018177651A JP6722736B2 JP 6722736 B2 JP6722736 B2 JP 6722736B2 JP 2018177651 A JP2018177651 A JP 2018177651A JP 2018177651 A JP2018177651 A JP 2018177651A JP 6722736 B2 JP6722736 B2 JP 6722736B2
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- less
- sputtering target
- bulk resistance
- mpa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005477 sputtering target Methods 0.000 title claims description 29
- 239000011148 porous material Substances 0.000 claims description 27
- 238000005452 bending Methods 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 23
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 238000001878 scanning electron micrograph Methods 0.000 claims description 3
- 239000011701 zinc Substances 0.000 description 38
- 238000004544 sputter deposition Methods 0.000 description 24
- 239000000843 powder Substances 0.000 description 16
- 230000002159 abnormal effect Effects 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 238000005245 sintering Methods 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 11
- 230000035939 shock Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000006378 damage Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 241000283984 Rodentia Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Compositions Of Oxide Ceramics (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018177651A JP6722736B2 (ja) | 2018-09-21 | 2018-09-21 | 焼結体および、スパッタリングターゲット |
| KR1020190046280A KR102218814B1 (ko) | 2018-09-21 | 2019-04-19 | 소결체, 스퍼터링 타깃 및 소결체의 제조 방법 |
| CN201910446594.1A CN110937891A (zh) | 2018-09-21 | 2019-05-27 | 烧结体、溅射靶及烧结体的制造方法 |
| TW108121570A TWI696597B (zh) | 2018-09-21 | 2019-06-20 | 燒結體、濺鍍靶材及燒結體的製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018177651A JP6722736B2 (ja) | 2018-09-21 | 2018-09-21 | 焼結体および、スパッタリングターゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2020045268A JP2020045268A (ja) | 2020-03-26 |
| JP6722736B2 true JP6722736B2 (ja) | 2020-07-15 |
Family
ID=69900704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018177651A Active JP6722736B2 (ja) | 2018-09-21 | 2018-09-21 | 焼結体および、スパッタリングターゲット |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6722736B2 (zh) |
| KR (1) | KR102218814B1 (zh) |
| CN (1) | CN110937891A (zh) |
| TW (1) | TWI696597B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114002125B (zh) * | 2021-11-03 | 2023-10-13 | 中南大学 | 一种烧结料层阻力系数的快速测试方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5244327B2 (zh) | 1973-04-25 | 1977-11-07 | ||
| JPS594056B2 (ja) | 1976-09-13 | 1984-01-27 | カシオ計算機株式会社 | キ−入力制御方式 |
| JPS5928856B2 (ja) | 1978-08-26 | 1984-07-16 | 株式会社北電子 | 印刷物の識別方法 |
| KR101346472B1 (ko) * | 2008-06-06 | 2014-01-02 | 이데미쓰 고산 가부시키가이샤 | 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법 |
| TWI473896B (zh) * | 2008-06-27 | 2015-02-21 | Idemitsu Kosan Co | From InGaO 3 (ZnO) crystal phase, and a method for producing the same |
| JP5596963B2 (ja) * | 2009-11-19 | 2014-09-24 | 出光興産株式会社 | スパッタリングターゲット及びそれを用いた薄膜トランジスタ |
| JP5685428B2 (ja) * | 2010-12-02 | 2015-03-18 | 太平洋セメント株式会社 | Ｉｇｚｏ焼結体及びその製造方法 |
| JP2014105124A (ja) * | 2012-11-27 | 2014-06-09 | Sumitomo Electric Ind Ltd | 導電性酸化物ならびに半導体酸化物膜およびその製造方法 |
| US10515787B2 (en) * | 2013-11-29 | 2019-12-24 | Kobelco Research Institute, Inc. | Oxide sintered body and sputtering target, and method for producing same |
| JP6158129B2 (ja) * | 2014-03-28 | 2017-07-05 | 出光興産株式会社 | 酸化物焼結体及びスパッタリングターゲット |
| KR101644767B1 (ko) * | 2014-03-28 | 2016-08-01 | 제이엑스금속주식회사 | 산화물 소결체 및 그 산화물 소결체로 이루어지는 스퍼터링 타깃 |
| WO2016136611A1 (ja) | 2015-02-27 | 2016-09-01 | Ｊｘ金属株式会社 | 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット |
-
2018
- 2018-09-21 JP JP2018177651A patent/JP6722736B2/ja active Active
-
2019
- 2019-04-19 KR KR1020190046280A patent/KR102218814B1/ko active IP Right Grant
- 2019-05-27 CN CN201910446594.1A patent/CN110937891A/zh active Pending
- 2019-06-20 TW TW108121570A patent/TWI696597B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI696597B (zh) | 2020-06-21 |
| TW202012340A (zh) | 2020-04-01 |
| CN110937891A (zh) | 2020-03-31 |
| JP2020045268A (ja) | 2020-03-26 |
| KR102218814B1 (ko) | 2021-02-22 |
| KR20200034561A (ko) | 2020-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5205696B2 (ja) | 酸化ガリウム系焼結体およびその製造方法 | |
| JP5081959B2 (ja) | 酸化物焼結体及び酸化物半導体薄膜 | |
| JP6293359B2 (ja) | 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット | |
| CN109071359B (zh) | 氧化物烧结体、溅射靶以及氧化物半导体膜 | |
| WO2017158928A1 (ja) | 酸化物焼結体 | |
| JP6722736B2 (ja) | 焼結体および、スパッタリングターゲット | |
| WO2016152349A1 (ja) | 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット | |
| JP5292130B2 (ja) | スパッタリングターゲット | |
| WO2015146252A1 (ja) | 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット | |
| JP2023155427A (ja) | Ｉｇｚｏスパッタリングターゲット | |
| JP7086080B2 (ja) | 酸化物焼結体およびスパッタリングターゲット | |
| CN109072417B (zh) | 溅镀靶及其制造方法 | |
| JP5081960B2 (ja) | 酸化物焼結体及び酸化物半導体薄膜 | |
| JP7203088B2 (ja) | 酸化物焼結体、スパッタリングターゲットおよび透明導電膜 | |
| TWI836009B (zh) | 氧化物燒結體、濺鍍靶材及濺鍍靶材之製造方法 | |
| JP5367660B2 (ja) | 酸化物焼結体及び酸化物半導体薄膜 | |
| JP6155919B2 (ja) | 複合酸化物焼結体及び酸化物透明導電膜 | |
| JP5367659B2 (ja) | 酸化物焼結体及び酸化物半導体薄膜 | |
| JP7566804B2 (ja) | Ｉｇｚｏスパッタリングターゲット | |
| JP2023124649A (ja) | スパッタリングターゲット部材及びスパッタリングターゲット部材の製造方法 | |
| JP6133531B1 (ja) | 酸化物焼結体 | |
| WO2015068535A1 (ja) | スパッタリングターゲットおよびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190312 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200107 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200306 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200526 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200622 |
|
| R151 | Written notification of patent or utility model registration |
Ref document number: 6722736 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |