JP6702952B2 - 基板処理チャンバ内で使用するための冷却式プロセスツールアダプタ - Google Patents

基板処理チャンバ内で使用するための冷却式プロセスツールアダプタ Download PDF

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Publication number
JP6702952B2
JP6702952B2 JP2017516639A JP2017516639A JP6702952B2 JP 6702952 B2 JP6702952 B2 JP 6702952B2 JP 2017516639 A JP2017516639 A JP 2017516639A JP 2017516639 A JP2017516639 A JP 2017516639A JP 6702952 B2 JP6702952 B2 JP 6702952B2
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JP
Japan
Prior art keywords
process tool
adapter
tool adapter
cooled
cooled process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2017516639A
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English (en)
Japanese (ja)
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JP2017523313A5 (enExample
JP2017523313A (ja
Inventor
ウィリアム アール フラクターマン
ウィリアム アール フラクターマン
マーティン リー ライカー
マーティン リー ライカー
キース エイ ミラー
キース エイ ミラー
アントニー インファンテ
アントニー インファンテ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
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Publication of JP2017523313A5 publication Critical patent/JP2017523313A5/ja
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Publication of JP6702952B2 publication Critical patent/JP6702952B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2017516639A 2014-06-06 2015-05-18 基板処理チャンバ内で使用するための冷却式プロセスツールアダプタ Expired - Fee Related JP6702952B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462009153P 2014-06-06 2014-06-06
US62/009,153 2014-06-06
US14/713,386 US20150354054A1 (en) 2014-06-06 2015-05-15 Cooled process tool adapter for use in substrate processing chambers
US14/713,386 2015-05-15
PCT/US2015/031441 WO2015187354A1 (en) 2014-06-06 2015-05-18 Cooled process tool adapter for use in substrate processing chambers

Publications (3)

Publication Number Publication Date
JP2017523313A JP2017523313A (ja) 2017-08-17
JP2017523313A5 JP2017523313A5 (enExample) 2018-06-28
JP6702952B2 true JP6702952B2 (ja) 2020-06-03

Family

ID=54767174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017516639A Expired - Fee Related JP6702952B2 (ja) 2014-06-06 2015-05-18 基板処理チャンバ内で使用するための冷却式プロセスツールアダプタ

Country Status (7)

Country Link
US (1) US20150354054A1 (enExample)
JP (1) JP6702952B2 (enExample)
KR (1) KR102391979B1 (enExample)
CN (1) CN106415786B (enExample)
SG (2) SG10201810894TA (enExample)
TW (1) TWI657520B (enExample)
WO (1) WO2015187354A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6105114B1 (ja) * 2016-03-14 2017-03-29 株式会社東芝 成膜装置、スパッタ装置、及びコリメータ
GB2550897B (en) * 2016-05-27 2020-12-23 Oxford Instruments Nanotechnology Tools Ltd Cryogenic cooling system
US11276559B2 (en) * 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
TWI765213B (zh) * 2019-01-23 2022-05-21 大陸商北京北方華創微電子裝備有限公司 內襯冷卻組件、反應腔室及半導體加工設備
CN115087758A (zh) * 2020-02-11 2022-09-20 朗姆研究公司 用于控制晶片晶边/边缘上的沉积的承载环设计
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
CN111850501B (zh) * 2020-07-20 2022-09-27 江苏集萃有机光电技术研究所有限公司 一种基片架结构及真空蒸镀装置
US12183559B2 (en) * 2021-10-22 2024-12-31 Applied Materials, Inc. Apparatus for temperature control in a substrate processing chamber
USD1038901S1 (en) * 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1026054S1 (en) * 2022-04-22 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025935S1 (en) * 2022-11-03 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1026839S1 (en) * 2022-12-16 2024-05-14 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1024149S1 (en) * 2022-12-16 2024-04-23 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025936S1 (en) * 2022-12-16 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
US20250293008A1 (en) * 2024-03-18 2025-09-18 Applied Materials, Inc. External Cooling Assembly for Substrate Support

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
JPH1190762A (ja) * 1997-05-27 1999-04-06 Chiron Werke Gmbh & Co Kg 工作機械
US5953827A (en) * 1997-11-05 1999-09-21 Applied Materials, Inc. Magnetron with cooling system for process chamber of processing system
US7134812B2 (en) * 2002-07-17 2006-11-14 Kevin Beckington Tool coolant application and direction assembly
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7846310B2 (en) * 2006-12-13 2010-12-07 Applied Materials, Inc. Encapsulated and water cooled electromagnet array
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
JP4994164B2 (ja) * 2007-09-07 2012-08-08 株式会社牧野フライス製作所 工作機械の移動体の冷却方法及び装置
KR101571558B1 (ko) * 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
CN102027564B (zh) * 2008-04-28 2013-05-22 塞梅孔公司 对物体进行预处理和涂覆的装置和方法
JP5611350B2 (ja) * 2009-08-11 2014-10-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｒｆ物理気相堆積用のプロセスキット
US9096927B2 (en) * 2011-09-02 2015-08-04 Applied Materials, Inc. Cooling ring for physical vapor deposition chamber target
US9605341B2 (en) * 2013-03-06 2017-03-28 Applied Materials, Inc. Physical vapor deposition RF plasma shield deposit control

Also Published As

Publication number Publication date
WO2015187354A1 (en) 2015-12-10
KR102391979B1 (ko) 2022-04-27
CN106415786B (zh) 2019-11-22
SG10201810894TA (en) 2019-01-30
TW201546937A (zh) 2015-12-16
CN106415786A (zh) 2017-02-15
KR20170015980A (ko) 2017-02-10
US20150354054A1 (en) 2015-12-10
JP2017523313A (ja) 2017-08-17
TWI657520B (zh) 2019-04-21
SG11201609402TA (en) 2016-12-29

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