TWI657520B - 用於基板處理腔室中的冷卻處理工具配接器 - Google Patents
用於基板處理腔室中的冷卻處理工具配接器 Download PDFInfo
- Publication number
- TWI657520B TWI657520B TW104116145A TW104116145A TWI657520B TW I657520 B TWI657520 B TW I657520B TW 104116145 A TW104116145 A TW 104116145A TW 104116145 A TW104116145 A TW 104116145A TW I657520 B TWI657520 B TW I657520B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing tool
- ring
- tool adapter
- cooling processing
- adapter
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 162
- 239000000758 substrate Substances 0.000 title abstract description 62
- 238000000034 method Methods 0.000 title description 21
- 230000008569 process Effects 0.000 title description 20
- 238000001816 cooling Methods 0.000 claims abstract description 105
- 239000002826 coolant Substances 0.000 claims abstract description 76
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 239000012212 insulator Substances 0.000 claims description 23
- 238000005192 partition Methods 0.000 claims description 15
- 230000002349 favourable effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 38
- 230000008021 deposition Effects 0.000 description 38
- 238000004544 sputter deposition Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 19
- 239000007789 gas Substances 0.000 description 14
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462009153P | 2014-06-06 | 2014-06-06 | |
| US62/009,153 | 2014-06-06 | ||
| US14/713,386 US20150354054A1 (en) | 2014-06-06 | 2015-05-15 | Cooled process tool adapter for use in substrate processing chambers |
| US14/713,386 | 2015-05-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201546937A TW201546937A (zh) | 2015-12-16 |
| TWI657520B true TWI657520B (zh) | 2019-04-21 |
Family
ID=54767174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104116145A TWI657520B (zh) | 2014-06-06 | 2015-05-20 | 用於基板處理腔室中的冷卻處理工具配接器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150354054A1 (enExample) |
| JP (1) | JP6702952B2 (enExample) |
| KR (1) | KR102391979B1 (enExample) |
| CN (1) | CN106415786B (enExample) |
| SG (2) | SG10201810894TA (enExample) |
| TW (1) | TWI657520B (enExample) |
| WO (1) | WO2015187354A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6105114B1 (ja) * | 2016-03-14 | 2017-03-29 | 株式会社東芝 | 成膜装置、スパッタ装置、及びコリメータ |
| GB2550897B (en) * | 2016-05-27 | 2020-12-23 | Oxford Instruments Nanotechnology Tools Ltd | Cryogenic cooling system |
| US11276559B2 (en) * | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| CN109390222B (zh) * | 2017-08-08 | 2021-01-05 | 宁波江丰电子材料股份有限公司 | 准直器检具及其使用方法 |
| TWI765213B (zh) * | 2019-01-23 | 2022-05-21 | 大陸商北京北方華創微電子裝備有限公司 | 內襯冷卻組件、反應腔室及半導體加工設備 |
| CN115087758A (zh) * | 2020-02-11 | 2022-09-20 | 朗姆研究公司 | 用于控制晶片晶边/边缘上的沉积的承载环设计 |
| US11339466B2 (en) * | 2020-03-20 | 2022-05-24 | Applied Materials, Inc. | Heated shield for physical vapor deposition chamber |
| CN111850501B (zh) * | 2020-07-20 | 2022-09-27 | 江苏集萃有机光电技术研究所有限公司 | 一种基片架结构及真空蒸镀装置 |
| US12183559B2 (en) * | 2021-10-22 | 2024-12-31 | Applied Materials, Inc. | Apparatus for temperature control in a substrate processing chamber |
| USD1038901S1 (en) * | 2022-01-12 | 2024-08-13 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| USD1026054S1 (en) * | 2022-04-22 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1025935S1 (en) * | 2022-11-03 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1026839S1 (en) * | 2022-12-16 | 2024-05-14 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1024149S1 (en) * | 2022-12-16 | 2024-04-23 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1025936S1 (en) * | 2022-12-16 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| US20250293008A1 (en) * | 2024-03-18 | 2025-09-18 | Applied Materials, Inc. | External Cooling Assembly for Substrate Support |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7134812B2 (en) * | 2002-07-17 | 2006-11-14 | Kevin Beckington | Tool coolant application and direction assembly |
| US20070102286A1 (en) * | 2005-10-31 | 2007-05-10 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US7846310B2 (en) * | 2006-12-13 | 2010-12-07 | Applied Materials, Inc. | Encapsulated and water cooled electromagnet array |
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| US20130056347A1 (en) * | 2011-09-02 | 2013-03-07 | Applied Materials, Inc. | Cooling ring for physical vapor deposition chamber target |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5690795A (en) * | 1995-06-05 | 1997-11-25 | Applied Materials, Inc. | Screwless shield assembly for vacuum processing chambers |
| JPH1190762A (ja) * | 1997-05-27 | 1999-04-06 | Chiron Werke Gmbh & Co Kg | 工作機械 |
| US5953827A (en) * | 1997-11-05 | 1999-09-21 | Applied Materials, Inc. | Magnetron with cooling system for process chamber of processing system |
| US7686926B2 (en) * | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
| US20080257263A1 (en) * | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
| JP4994164B2 (ja) * | 2007-09-07 | 2012-08-08 | 株式会社牧野フライス製作所 | 工作機械の移動体の冷却方法及び装置 |
| KR101571558B1 (ko) * | 2008-04-16 | 2015-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 증착 차폐 컴포넌트들 |
| CN102027564B (zh) * | 2008-04-28 | 2013-05-22 | 塞梅孔公司 | 对物体进行预处理和涂覆的装置和方法 |
| JP5611350B2 (ja) * | 2009-08-11 | 2014-10-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Ｒｆ物理気相堆積用のプロセスキット |
| US9605341B2 (en) * | 2013-03-06 | 2017-03-28 | Applied Materials, Inc. | Physical vapor deposition RF plasma shield deposit control |
-
2015
- 2015-05-15 US US14/713,386 patent/US20150354054A1/en not_active Abandoned
- 2015-05-18 SG SG10201810894TA patent/SG10201810894TA/en unknown
- 2015-05-18 SG SG11201609402TA patent/SG11201609402TA/en unknown
- 2015-05-18 KR KR1020177000380A patent/KR102391979B1/ko active Active
- 2015-05-18 WO PCT/US2015/031441 patent/WO2015187354A1/en not_active Ceased
- 2015-05-18 JP JP2017516639A patent/JP6702952B2/ja not_active Expired - Fee Related
- 2015-05-18 CN CN201580029964.1A patent/CN106415786B/zh not_active Expired - Fee Related
- 2015-05-20 TW TW104116145A patent/TWI657520B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7134812B2 (en) * | 2002-07-17 | 2006-11-14 | Kevin Beckington | Tool coolant application and direction assembly |
| US20070102286A1 (en) * | 2005-10-31 | 2007-05-10 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US7846310B2 (en) * | 2006-12-13 | 2010-12-07 | Applied Materials, Inc. | Encapsulated and water cooled electromagnet array |
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| US20130056347A1 (en) * | 2011-09-02 | 2013-03-07 | Applied Materials, Inc. | Cooling ring for physical vapor deposition chamber target |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015187354A1 (en) | 2015-12-10 |
| JP6702952B2 (ja) | 2020-06-03 |
| KR102391979B1 (ko) | 2022-04-27 |
| CN106415786B (zh) | 2019-11-22 |
| SG10201810894TA (en) | 2019-01-30 |
| TW201546937A (zh) | 2015-12-16 |
| CN106415786A (zh) | 2017-02-15 |
| KR20170015980A (ko) | 2017-02-10 |
| US20150354054A1 (en) | 2015-12-10 |
| JP2017523313A (ja) | 2017-08-17 |
| SG11201609402TA (en) | 2016-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |