CN106415786B - 用于基板处理腔室中的冷却式处理工具配接器 - Google Patents

用于基板处理腔室中的冷却式处理工具配接器 Download PDF

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Publication number
CN106415786B
CN106415786B CN201580029964.1A CN201580029964A CN106415786B CN 106415786 B CN106415786 B CN 106415786B CN 201580029964 A CN201580029964 A CN 201580029964A CN 106415786 B CN106415786 B CN 106415786B
Authority
CN
China
Prior art keywords
cooled
adapter
tool adapter
processing tool
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580029964.1A
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English (en)
Chinese (zh)
Other versions
CN106415786A (zh
Inventor
威廉·R·弗鲁赫特曼
马丁·李·莱克
基思·A·米勒
安东尼·因凡特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
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Publication of CN106415786A publication Critical patent/CN106415786A/zh
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Publication of CN106415786B publication Critical patent/CN106415786B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN201580029964.1A 2014-06-06 2015-05-18 用于基板处理腔室中的冷却式处理工具配接器 Expired - Fee Related CN106415786B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462009153P 2014-06-06 2014-06-06
US62/009,153 2014-06-06
US14/713,386 2015-05-15
US14/713,386 US20150354054A1 (en) 2014-06-06 2015-05-15 Cooled process tool adapter for use in substrate processing chambers
PCT/US2015/031441 WO2015187354A1 (en) 2014-06-06 2015-05-18 Cooled process tool adapter for use in substrate processing chambers

Publications (2)

Publication Number Publication Date
CN106415786A CN106415786A (zh) 2017-02-15
CN106415786B true CN106415786B (zh) 2019-11-22

Family

ID=54767174

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580029964.1A Expired - Fee Related CN106415786B (zh) 2014-06-06 2015-05-18 用于基板处理腔室中的冷却式处理工具配接器

Country Status (7)

Country Link
US (1) US20150354054A1 (enExample)
JP (1) JP6702952B2 (enExample)
KR (1) KR102391979B1 (enExample)
CN (1) CN106415786B (enExample)
SG (2) SG10201810894TA (enExample)
TW (1) TWI657520B (enExample)
WO (1) WO2015187354A1 (enExample)

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JP6105114B1 (ja) 2016-03-14 2017-03-29 株式会社東芝 成膜装置、スパッタ装置、及びコリメータ
GB2550897B (en) * 2016-05-27 2020-12-23 Oxford Instruments Nanotechnology Tools Ltd Cryogenic cooling system
US11276559B2 (en) * 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
TWI765213B (zh) * 2019-01-23 2022-05-21 大陸商北京北方華創微電子裝備有限公司 內襯冷卻組件、反應腔室及半導體加工設備
KR20220010074A (ko) * 2020-02-11 2022-01-25 램 리써치 코포레이션 웨이퍼 베벨/에지 상의 증착을 제어하기 위한 캐리어 링 설계들
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
CN111850501B (zh) * 2020-07-20 2022-09-27 江苏集萃有机光电技术研究所有限公司 一种基片架结构及真空蒸镀装置
US12183559B2 (en) * 2021-10-22 2024-12-31 Applied Materials, Inc. Apparatus for temperature control in a substrate processing chamber
USD1038901S1 (en) * 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1026054S1 (en) * 2022-04-22 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025935S1 (en) * 2022-11-03 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1026839S1 (en) * 2022-12-16 2024-05-14 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1024149S1 (en) * 2022-12-16 2024-04-23 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025936S1 (en) * 2022-12-16 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
US20250293008A1 (en) * 2024-03-18 2025-09-18 Applied Materials, Inc. External Cooling Assembly for Substrate Support

Citations (6)

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CN1950538A (zh) * 2004-05-26 2007-04-18 应用材料股份有限公司 可变式四磁控管阵列，特别适用于多步骤工艺以在溅射反应器中形成金属阻挡层
CN101089220A (zh) * 2005-10-31 2007-12-19 应用材料股份有限公司 用于衬底处理室的处理配件和靶材
CN101235482A (zh) * 2007-01-29 2008-08-06 应用材料股份有限公司 用于衬底处理腔室的工艺配件
CN102576664A (zh) * 2009-08-11 2012-07-11 应用材料公司 用于rf物理气相沉积的处理套件
CN102864422A (zh) * 2007-04-23 2013-01-09 应用材料公司 用于基板处理腔室的冷却遮蔽件
CN103764869A (zh) * 2011-09-02 2014-04-30 应用材料公司 用于物理气相沉积腔室靶材的冷却环

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US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
JPH1190762A (ja) * 1997-05-27 1999-04-06 Chiron Werke Gmbh & Co Kg 工作機械
US5953827A (en) * 1997-11-05 1999-09-21 Applied Materials, Inc. Magnetron with cooling system for process chamber of processing system
US7134812B2 (en) * 2002-07-17 2006-11-14 Kevin Beckington Tool coolant application and direction assembly
US7846310B2 (en) * 2006-12-13 2010-12-07 Applied Materials, Inc. Encapsulated and water cooled electromagnet array
JP4994164B2 (ja) * 2007-09-07 2012-08-08 株式会社牧野フライス製作所 工作機械の移動体の冷却方法及び装置
KR101571558B1 (ko) * 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
WO2009132822A2 (de) * 2008-04-28 2009-11-05 Cemecon Ag Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern
US9605341B2 (en) * 2013-03-06 2017-03-28 Applied Materials, Inc. Physical vapor deposition RF plasma shield deposit control

Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
CN1950538A (zh) * 2004-05-26 2007-04-18 应用材料股份有限公司 可变式四磁控管阵列，特别适用于多步骤工艺以在溅射反应器中形成金属阻挡层
CN101089220A (zh) * 2005-10-31 2007-12-19 应用材料股份有限公司 用于衬底处理室的处理配件和靶材
CN103147049A (zh) * 2005-10-31 2013-06-12 应用材料公司 用于衬底处理室的处理配件和靶材
CN101235482A (zh) * 2007-01-29 2008-08-06 应用材料股份有限公司 用于衬底处理腔室的工艺配件
CN102864422A (zh) * 2007-04-23 2013-01-09 应用材料公司 用于基板处理腔室的冷却遮蔽件
CN102576664A (zh) * 2009-08-11 2012-07-11 应用材料公司 用于rf物理气相沉积的处理套件
CN103764869A (zh) * 2011-09-02 2014-04-30 应用材料公司 用于物理气相沉积腔室靶材的冷却环

Also Published As

Publication number Publication date
JP2017523313A (ja) 2017-08-17
CN106415786A (zh) 2017-02-15
WO2015187354A1 (en) 2015-12-10
KR102391979B1 (ko) 2022-04-27
TWI657520B (zh) 2019-04-21
SG10201810894TA (en) 2019-01-30
JP6702952B2 (ja) 2020-06-03
SG11201609402TA (en) 2016-12-29
KR20170015980A (ko) 2017-02-10
TW201546937A (zh) 2015-12-16
US20150354054A1 (en) 2015-12-10

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