JP6697225B2 - 照明装置 - Google Patents
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- JP6697225B2 JP6697225B2 JP2015105883A JP2015105883A JP6697225B2 JP 6697225 B2 JP6697225 B2 JP 6697225B2 JP 2015105883 A JP2015105883 A JP 2015105883A JP 2015105883 A JP2015105883 A JP 2015105883A JP 6697225 B2 JP6697225 B2 JP 6697225B2
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Description
<照明装置の実施形態>
本実施形態の照明装置は、光源と、光源からの光を受けて、波長変換された光を出射する反射型の波長変換部材と、を備え、波長変換部材として本発明の波長変換部材を採用する。
照明装置100は、図1に示すように、基本的な要素として、レーザー光を発する光源20と、光源20からにより励起されて蛍光を発する波長変換部材10と、を備え、これら光源20及び波長変換部材10を互いに離間した適切な配置となるように支持する支持部材(不図示)や、光源20と波長変換部材10との配置に応じて適宜配置される光学要素30を備えている。
本実施形態の波長変換部材は、図2及び図3に示すように、基板11と、基板11の主平面に対し垂直に立設された仕切17と、基板11の上に形成された蛍光体層15とを備える。なお図2及び図3は、説明のために波長変換部材の一部のみを示している。また図2において蛍光体層15は省略している。
本変更例は、仕切17の断面形状が図5に示す仕切と異なる。それ以外の構成は、第一実施形態で説明した波長変換部材と同じである。
本実施形態は、仕切の断面形状は第一実施形態と同様であるが、光源からの光の入射角を考慮して、蛍光体層15を形成しない領域を設けた点が異なる。本実施形態は、波長変換部材に対する光源からの光の入射角が一定であって且つ0度より大きい場合に適用される。それ以外の構成は第一実施形態と同様であり、重複する説明は省略する。
W≦H×tanθ
である。
本実施形態は、仕切の側面形状を、基板11の主平面に対し内側に傾斜させた(逆テーパ状にした)ことが特徴である。その他の構成は第一実施形態と同様であり、以下、異なる点を中心に説明する。
第三実施形態は、蛍光体層15を区切る仕切17の両側面を逆テーパ状にしたものであるが、本実施形態の波長変換部材では、光源光の入射方向に合わせて、仕切17の両側面を同じ向きの傾斜にしたことが特徴である。
シリコン基板(大きさ:20mm×20mm、厚み:0.5mm)の一方の面にドライエッチング法により格子状の仕切を形成した。仕切のサイズは、幅:10μm、高さ:50μm、ピッチ:110μmとした。これにより仕切によって区切られたキャビティサイズは100μm×100μmである。
[蛍光体塗料A]
YAG系蛍光体(平均粒子径:15μm) 50%
エチルシリケート化合物 3%
有機溶剤 残部
[バインダー塗料B]
エチルシリケート化合物 10%
有機溶剤 残部
実施例1と同様に、シリコン基板の一方の面に、SF6、C4F8を用いたDeep RIEエッチング法により格子状の仕切を形成した。仕切のサイズは、上面の幅:30μm、高さ:17μm、傾斜角度(法線に対するテーパの角度)φ:30度とした。仕切によって区切られたキャビティサイズは100μm×100μmである。
その結果、参考例の波長変換部材を用いた場合には、格子に対応する格子状の色むら(青い部分)が観察されたが、実施例1及び実施例2のいずれの波長変換部材においても、格子状の色むらが殆ど見られなかった。
Claims (4)
- 光源と、前記光源からの光を受けて、波長変換された光を出射する反射型の波長変換部材と、を備えた照明装置であって、
前記波長変換部材が、
基板と基板の上に形成された波長変換材料層とを有し、光源からの光の照射を受けて、受光面を出射面として、波長変換された光を出射する反射型の波長変換部材であって、
基板には波長変換材料層を複数の区画に仕切る仕切部材が配置されており、前記仕切部材の高さは、隣接する仕切部材と仕切部材との間に存在する波長変換材料層の厚みより高く、仕切部材の上面に、波長変換材料層が形成されており、
前記仕切部材の上面に形成された前記波長変換材料層の厚みは、前記隣接する仕切部材と仕切部材との間に存在する波長変換材料層の厚みより小さく、
前記基板は、その主平面と前記光源からの光の照射方向とのなす角度が90度未満又は90度以上であって、前記光源からの光が直接照射されない前記仕切部材の側面及び基板表面は、前記波長変換材料層で覆われていない波長変換部材である照明装置。 - 光源と、前記光源からの光を受けて、波長変換された光を出射する反射型の波長変換部材と、を備えた照明装置であって、
前記波長変換部材が、
基板と基板の上に形成された波長変換材料層とを有し、光源からの光の照射を受けて、受光面を出射面として、波長変換された光を出射する反射型の波長変換部材であって、
基板には波長変換材料層を複数の区画に仕切る仕切部材が配置されており、前記仕切部材の高さは、隣接する仕切部材と仕切部材との間に存在する波長変換材料層の厚みより高く、仕切部材の上面に、波長変換材料層が形成されており、
前記仕切部材は、少なくとも一つの側面が、前記基板の主平面に対し傾斜し、前記傾斜した側面の一部の傾斜角は前記光の入射角より大きく、前記傾斜した側面の一部は、前記波長変換材料層で覆われていない波長変換部材である照明装置。 - 光源と、前記光源からの光を受けて、波長変換された光を出射する反射型の波長変換部材と、を備えた照明装置であって、
前記光源と前記波長変換部材とは、前記光源の光の出射方向が、前記基板の主平面と垂直な方向に対し角度を有する位置で配置されており、
前記波長変換部材が
基板と基板の上に形成された波長変換材料層とを有し、光源からの光の照射を受けて、受光面を出射面として、波長変換された光を出射する反射型の波長変換部材であって、
基板には波長変換材料層を複数の区画に仕切る仕切部材が配置されており、前記仕切部材の高さは、隣接する仕切部材と仕切部材との間に存在する波長変換材料層の厚みより高く、仕切部材の上面に、波長変換材料層が形成されており、
前記仕切部材の上面に形成された前記波長変換材料層の厚みは、前記隣接する仕切部材と仕切部材との間に存在する波長変換材料層の厚みより小さく、
前記基板は、その主平面と前記光源からの光の照射方向とのなす角度が90度未満又は90度以上であって、前記光源からの光が直接照射されない前記仕切部材の側面及び基板表面は、前記波長変換材料層で覆われていない波長変換部材であることを特徴とする照明装置。 - 請求項1ないし3いずれか一項に記載の照明装置であって、
前記光源と前記波長変換部材との間に、前記光源からの光を前記波長変換部材に向けて反射し、前記光源からの光の前記波長変換部材に対する照射範囲を移動制御するミラーをさらに備えたことを特徴とする照明装置。
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