JP6685962B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6685962B2
JP6685962B2 JP2017058156A JP2017058156A JP6685962B2 JP 6685962 B2 JP6685962 B2 JP 6685962B2 JP 2017058156 A JP2017058156 A JP 2017058156A JP 2017058156 A JP2017058156 A JP 2017058156A JP 6685962 B2 JP6685962 B2 JP 6685962B2
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JP
Japan
Prior art keywords
diode
type
well
layer
semiconductor device
Prior art date
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Expired - Fee Related
Application number
JP2017058156A
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English (en)
Japanese (ja)
Other versions
JP2018160626A (ja
JP2018160626A5 (enExample
Inventor
崔　秀明
秀明 崔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2017058156A priority Critical patent/JP6685962B2/ja
Priority to US15/688,529 priority patent/US10032762B1/en
Publication of JP2018160626A publication Critical patent/JP2018160626A/ja
Publication of JP2018160626A5 publication Critical patent/JP2018160626A5/ja
Application granted granted Critical
Publication of JP6685962B2 publication Critical patent/JP6685962B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

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  • Semiconductor Integrated Circuits (AREA)
JP2017058156A 2017-03-23 2017-03-23 半導体装置 Expired - Fee Related JP6685962B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017058156A JP6685962B2 (ja) 2017-03-23 2017-03-23 半導体装置
US15/688,529 US10032762B1 (en) 2017-03-23 2017-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017058156A JP6685962B2 (ja) 2017-03-23 2017-03-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2018160626A JP2018160626A (ja) 2018-10-11
JP2018160626A5 JP2018160626A5 (enExample) 2019-01-17
JP6685962B2 true JP6685962B2 (ja) 2020-04-22

Family

ID=62874451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017058156A Expired - Fee Related JP6685962B2 (ja) 2017-03-23 2017-03-23 半導体装置

Country Status (2)

Country Link
US (1) US10032762B1 (enExample)
JP (1) JP6685962B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3544056B1 (fr) * 2018-03-21 2025-02-12 STMicroelectronics S.r.l. Circuit de protection esd et son procédé de fabrication
US11784220B2 (en) 2020-12-25 2023-10-10 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2677821B1 (fr) * 1991-06-11 1993-10-08 Sgs Thomson Microelectronics Sa Composant de protection bidirectionnel.
JPH10294475A (ja) * 1997-04-17 1998-11-04 Toshiba Corp 半導体装置とその製造方法
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7989923B2 (en) * 2008-12-23 2011-08-02 Amazing Microelectronic Corp. Bi-directional transient voltage suppression device and forming method thereof
JP2012146717A (ja) 2011-01-07 2012-08-02 Toshiba Corp Ｅｓｄ保護回路
JP2012182381A (ja) 2011-03-02 2012-09-20 Panasonic Corp 半導体装置
JP2014067986A (ja) 2012-09-10 2014-04-17 Toshiba Corp 半導体装置
JP6048218B2 (ja) * 2013-02-28 2016-12-21 株式会社村田製作所 Ｅｓｄ保護デバイス
JP2015012184A (ja) 2013-06-28 2015-01-19 株式会社東芝 半導体素子
JP2015126149A (ja) 2013-12-27 2015-07-06 パナソニックＩｐマネジメント株式会社 低容量半導体装置およびその製造方法
JP2015179776A (ja) 2014-03-19 2015-10-08 株式会社東芝 半導体装置
JP2016046383A (ja) 2014-08-22 2016-04-04 株式会社東芝 半導体装置
JP6266485B2 (ja) * 2014-09-26 2018-01-24 株式会社東芝 半導体装置
JP2016171233A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体装置
CN104851919B (zh) * 2015-04-10 2017-12-19 矽力杰半导体技术(杭州)有限公司 双向穿通半导体器件及其制造方法

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Publication number Publication date
JP2018160626A (ja) 2018-10-11
US10032762B1 (en) 2018-07-24

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