JP2018160626A5 - - Google Patents

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Publication number
JP2018160626A5
JP2018160626A5 JP2017058156A JP2017058156A JP2018160626A5 JP 2018160626 A5 JP2018160626 A5 JP 2018160626A5 JP 2017058156 A JP2017058156 A JP 2017058156A JP 2017058156 A JP2017058156 A JP 2017058156A JP 2018160626 A5 JP2018160626 A5 JP 2018160626A5
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JP
Japan
Prior art keywords
diode
terminal
anode
breakdown voltage
cathode connected
Prior art date
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Application number
JP2017058156A
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English (en)
Japanese (ja)
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JP2018160626A (ja
JP6685962B2 (ja
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Priority to JP2017058156A priority Critical patent/JP6685962B2/ja
Priority claimed from JP2017058156A external-priority patent/JP6685962B2/ja
Priority to US15/688,529 priority patent/US10032762B1/en
Publication of JP2018160626A publication Critical patent/JP2018160626A/ja
Publication of JP2018160626A5 publication Critical patent/JP2018160626A5/ja
Application granted granted Critical
Publication of JP6685962B2 publication Critical patent/JP6685962B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2017058156A 2017-03-23 2017-03-23 半導体装置 Expired - Fee Related JP6685962B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017058156A JP6685962B2 (ja) 2017-03-23 2017-03-23 半導体装置
US15/688,529 US10032762B1 (en) 2017-03-23 2017-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017058156A JP6685962B2 (ja) 2017-03-23 2017-03-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2018160626A JP2018160626A (ja) 2018-10-11
JP2018160626A5 true JP2018160626A5 (enExample) 2019-01-17
JP6685962B2 JP6685962B2 (ja) 2020-04-22

Family

ID=62874451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017058156A Expired - Fee Related JP6685962B2 (ja) 2017-03-23 2017-03-23 半導体装置

Country Status (2)

Country Link
US (1) US10032762B1 (enExample)
JP (1) JP6685962B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3544056B1 (fr) * 2018-03-21 2025-02-12 STMicroelectronics S.r.l. Circuit de protection esd et son procédé de fabrication
US11784220B2 (en) 2020-12-25 2023-10-10 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2677821B1 (fr) * 1991-06-11 1993-10-08 Sgs Thomson Microelectronics Sa Composant de protection bidirectionnel.
JPH10294475A (ja) * 1997-04-17 1998-11-04 Toshiba Corp 半導体装置とその製造方法
JP4597284B2 (ja) * 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7989923B2 (en) * 2008-12-23 2011-08-02 Amazing Microelectronic Corp. Bi-directional transient voltage suppression device and forming method thereof
JP2012146717A (ja) 2011-01-07 2012-08-02 Toshiba Corp Ｅｓｄ保護回路
JP2012182381A (ja) 2011-03-02 2012-09-20 Panasonic Corp 半導体装置
JP2014067986A (ja) 2012-09-10 2014-04-17 Toshiba Corp 半導体装置
JP6048218B2 (ja) * 2013-02-28 2016-12-21 株式会社村田製作所 Ｅｓｄ保護デバイス
JP2015012184A (ja) 2013-06-28 2015-01-19 株式会社東芝 半導体素子
JP2015126149A (ja) 2013-12-27 2015-07-06 パナソニックＩｐマネジメント株式会社 低容量半導体装置およびその製造方法
JP2015179776A (ja) 2014-03-19 2015-10-08 株式会社東芝 半導体装置
JP2016046383A (ja) 2014-08-22 2016-04-04 株式会社東芝 半導体装置
JP6266485B2 (ja) * 2014-09-26 2018-01-24 株式会社東芝 半導体装置
JP2016171233A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体装置
CN104851919B (zh) * 2015-04-10 2017-12-19 矽力杰半导体技术(杭州)有限公司 双向穿通半导体器件及其制造方法

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