JP6683083B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP6683083B2
JP6683083B2 JP2016184257A JP2016184257A JP6683083B2 JP 6683083 B2 JP6683083 B2 JP 6683083B2 JP 2016184257 A JP2016184257 A JP 2016184257A JP 2016184257 A JP2016184257 A JP 2016184257A JP 6683083 B2 JP6683083 B2 JP 6683083B2
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Japan
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layer
type
forming
semiconductor
conductivity type
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JP2016184257A
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English (en)
Japanese (ja)
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JP2018049928A5 (enExample
JP2018049928A (ja
Inventor
康裕 海老原
康裕 海老原
佐智子 青井
佐智子 青井
渡辺　行彦
行彦 渡辺
雅裕 杉本
雅裕 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
Original Assignee
Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
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Priority to JP2016184257A priority Critical patent/JP6683083B2/ja
Priority to PCT/JP2017/034101 priority patent/WO2018056357A1/ja
Publication of JP2018049928A publication Critical patent/JP2018049928A/ja
Publication of JP2018049928A5 publication Critical patent/JP2018049928A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2016184257A 2016-09-21 2016-09-21 半導体装置およびその製造方法 Active JP6683083B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016184257A JP6683083B2 (ja) 2016-09-21 2016-09-21 半導体装置およびその製造方法
PCT/JP2017/034101 WO2018056357A1 (ja) 2016-09-21 2017-09-21 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016184257A JP6683083B2 (ja) 2016-09-21 2016-09-21 半導体装置およびその製造方法

Publications (3)

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JP2018049928A JP2018049928A (ja) 2018-03-29
JP2018049928A5 JP2018049928A5 (enExample) 2019-02-14
JP6683083B2 true JP6683083B2 (ja) 2020-04-15

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WO (1) WO2018056357A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7327905B2 (ja) 2017-07-07 2023-08-16 株式会社デンソー 半導体装置およびその製造方法
JP6870547B2 (ja) 2017-09-18 2021-05-12 株式会社デンソー 半導体装置およびその製造方法
JP7167717B2 (ja) * 2019-01-07 2022-11-09 株式会社デンソー 半導体装置
JP7180402B2 (ja) * 2019-01-21 2022-11-30 株式会社デンソー 半導体装置
JP6969586B2 (ja) * 2019-04-23 2021-11-24 株式会社デンソー 半導体装置およびその製造方法
CN110190128B (zh) * 2019-05-29 2024-03-19 西安电子科技大学芜湖研究院 一种碳化硅双侧深l形基区结构的mosfet器件及其制备方法
JP7319501B2 (ja) 2019-10-09 2023-08-02 株式会社東芝 基板の製造方法、半導体装置の製造方法、基板及び半導体装置
CN116504808B (zh) * 2023-04-18 2025-09-26 湖北九峰山实验室 宽禁带半导体包角沟槽mosfet器件结构及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4879545B2 (ja) * 2005-09-29 2012-02-22 株式会社デンソー 半導体基板の製造方法
JP5736683B2 (ja) * 2010-07-30 2015-06-17 三菱電機株式会社 電力用半導体素子
JP5597217B2 (ja) * 2012-02-29 2014-10-01 株式会社東芝 半導体装置及びその製造方法
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9972676B2 (en) * 2014-01-10 2018-05-15 Mitsubishi Electric Corporation Silicon carbide semiconductor device
JP6169985B2 (ja) * 2014-01-27 2017-07-26 トヨタ自動車株式会社 半導体装置
JP6589263B2 (ja) * 2014-09-11 2019-10-16 富士電機株式会社 半導体装置

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JP2018049928A (ja) 2018-03-29

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