JP6679788B1 - Mems型半導体式ガス検知素子 - Google Patents
Mems型半導体式ガス検知素子 Download PDFInfo
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- JP6679788B1 JP6679788B1 JP2019068583A JP2019068583A JP6679788B1 JP 6679788 B1 JP6679788 B1 JP 6679788B1 JP 2019068583 A JP2019068583 A JP 2019068583A JP 2019068583 A JP2019068583 A JP 2019068583A JP 6679788 B1 JP6679788 B1 JP 6679788B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000002346 layers by function Substances 0.000 claims abstract description 65
- 238000001514 detection method Methods 0.000 claims abstract description 41
- 239000010410 layer Substances 0.000 abstract description 16
- 238000010586 diagram Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 171
- 229910044991 metal oxide Inorganic materials 0.000 description 34
- 150000004706 metal oxides Chemical class 0.000 description 34
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 4
- 229910003445 palladium oxide Inorganic materials 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 2
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910003446 platinum oxide Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910003450 rhodium oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000001282 iso-butane Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
2 基板
21 基板本体
21a 凹部
22 絶縁支持膜
22a 酸化シリコン膜
22b 窒化シリコン膜
22c 酸化シリコン膜
221 本体部
222 基部
223 接続部
23 空洞部
3 電極
3a 電極の一端
3b 電極の他端
4 ガス感応部
5 機能層
6 脚部
7 接着層
A 集積部
L1 一方のリード線
L2 他方のリード線
Claims (7)
- 基板と、
前記基板上に設けられる電極と、
前記電極に接触するように前記基板上に設けられるガス感応部と、
前記ガス感応部を被覆する機能層と
を備えるMEMS型半導体式ガス検知素子であって、
前記MEMS型半導体式ガス検知素子が、前記基板上に立設する脚部をさらに備え、
前記脚部が、絶縁性酸化物により形成され、
前記機能層が、前記ガス感応部および前記脚部に接触するように設けられる、
MEMS型半導体式ガス検知素子。 - 前記脚部が、前記基板から直接立設する、
請求項1に記載のMEMS型半導体式ガス検知素子。 - 前記電極が、単一の電極として形成され、ヒータとしても機能する、
請求項1または2に記載のMEMS型半導体式ガス検知素子。 - 前記脚部が、前記基板上の前記電極の少なくとも一部の外側に設けられる、
請求項1〜3のいずれか1項に記載のMEMS型半導体式ガス検知素子。 - 前記脚部が、前記基板上の前記電極の少なくとも一部の外側の略全周に亘って設けられる、
請求項1〜4のいずれか1項に記載のMEMS型半導体式ガス検知素子。 - 前記脚部が、前記基板上の前記電極の略全体の外側に設けられる、
請求項1〜5のいずれか1項に記載のMEMS型半導体式ガス検知素子。 - 前記ガス感応部が、前記基板上の前記脚部の内側に設けられる、
請求項4〜6のいずれか1項に記載のMEMS型半導体式ガス検知素子。
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JP2019068583A JP6679788B1 (ja) | 2019-03-29 | 2019-03-29 | Mems型半導体式ガス検知素子 |
PCT/JP2020/010367 WO2020203100A1 (ja) | 2019-03-29 | 2020-03-10 | Mems型半導体式ガス検知素子 |
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JP2019068583A JP6679788B1 (ja) | 2019-03-29 | 2019-03-29 | Mems型半導体式ガス検知素子 |
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JP6679788B1 true JP6679788B1 (ja) | 2020-04-15 |
JP2020165894A JP2020165894A (ja) | 2020-10-08 |
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Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000298108A (ja) * | 1999-04-13 | 2000-10-24 | Osaka Gas Co Ltd | ガスセンサ |
KR100812996B1 (ko) * | 2006-12-07 | 2008-03-13 | 한국전자통신연구원 | 마이크로 가스 센서 및 그 제조방법 |
WO2008126897A1 (ja) * | 2007-04-10 | 2008-10-23 | Hokuriku Electric Industry Co., Ltd. | 感応センサ及びその製造方法 |
JP2009229187A (ja) * | 2008-03-21 | 2009-10-08 | Citizen Watch Co Ltd | 薄膜型ガスセンサ |
JP2012172973A (ja) * | 2011-02-17 | 2012-09-10 | Figaro Eng Inc | 可燃性ガス検出装置及び可燃性ガス検出方法 |
KR101805784B1 (ko) * | 2015-11-11 | 2017-12-07 | (주)포인트엔지니어링 | 마이크로 히터 및 마이크로 센서 및 마이크로 센서 제조방법 |
US20190234896A1 (en) * | 2016-09-21 | 2019-08-01 | Sensirion Ag | Resistive metal oxide gas sensor coated with a fluoropolymer filter |
JP6805084B2 (ja) * | 2017-06-02 | 2020-12-23 | 新コスモス電機株式会社 | 半導体式ガス検知素子 |
JP6437689B1 (ja) * | 2018-08-07 | 2018-12-12 | 新コスモス電機株式会社 | Mems型半導体式ガス検知素子 |
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