JP6669566B2 - 銀エッチング液組成物およびこれを用いた表示基板 - Google Patents
銀エッチング液組成物およびこれを用いた表示基板 Download PDFInfo
- Publication number
- JP6669566B2 JP6669566B2 JP2016070480A JP2016070480A JP6669566B2 JP 6669566 B2 JP6669566 B2 JP 6669566B2 JP 2016070480 A JP2016070480 A JP 2016070480A JP 2016070480 A JP2016070480 A JP 2016070480A JP 6669566 B2 JP6669566 B2 JP 6669566B2
- Authority
- JP
- Japan
- Prior art keywords
- silver
- film
- transparent conductive
- etching
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 93
- 229910052709 silver Inorganic materials 0.000 title claims description 91
- 239000004332 silver Substances 0.000 title claims description 91
- 239000000203 mixture Substances 0.000 title claims description 65
- 239000000758 substrate Substances 0.000 title description 32
- 238000005530 etching Methods 0.000 claims description 94
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 27
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 26
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 104
- 238000000034 method Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 18
- 238000000151 deposition Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- -1 azole compound Chemical class 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000002772 conduction electron Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000008094 contradictory effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- 239000002042 Silver nanowire Substances 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000599 controlled substance Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- ing And Chemical Polishing (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150157637A KR102433385B1 (ko) | 2015-11-10 | 2015-11-10 | 은 식각액 조성물 및 이를 이용한 표시 기판 |
| KR10-2015-0157637 | 2015-11-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017092440A JP2017092440A (ja) | 2017-05-25 |
| JP6669566B2 true JP6669566B2 (ja) | 2020-03-18 |
Family
ID=58769062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016070480A Active JP6669566B2 (ja) | 2015-11-10 | 2016-03-31 | 銀エッチング液組成物およびこれを用いた表示基板 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6669566B2 (zh) |
| KR (1) | KR102433385B1 (zh) |
| CN (1) | CN106676526A (zh) |
| TW (1) | TWI636157B (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113026019B (zh) * | 2017-05-22 | 2024-01-26 | 东友精细化工有限公司 | 银薄膜蚀刻液组合物、蚀刻方法和金属图案的形成方法 |
| KR20190058758A (ko) * | 2017-11-21 | 2019-05-30 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 디스플레이 장치의 제조방법 |
| KR102503788B1 (ko) * | 2017-11-21 | 2023-02-27 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 디스플레이 장치의 제조방법 |
| CN113150786A (zh) * | 2021-04-26 | 2021-07-23 | 芯越微电子材料(嘉兴)有限公司 | 一种银复合膜层刻蚀剂及其制备方法 |
| CN116200749A (zh) * | 2023-02-28 | 2023-06-02 | 深圳新宙邦科技股份有限公司 | 一种含氧化铟或其合金/银或其合金的多层薄膜用蚀刻液 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6806206B2 (en) * | 2001-03-29 | 2004-10-19 | Sony Corporation | Etching method and etching liquid |
| JP4478383B2 (ja) * | 2002-11-26 | 2010-06-09 | 関東化学株式会社 | 銀を主成分とする金属薄膜のエッチング液組成物 |
| KR100579421B1 (ko) | 2004-11-20 | 2006-05-12 | 테크노세미켐 주식회사 | 은 식각액 조성물 |
| KR101124569B1 (ko) * | 2005-06-09 | 2012-03-15 | 삼성전자주식회사 | 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 |
| KR20080009866A (ko) * | 2006-07-25 | 2008-01-30 | 동우 화인켐 주식회사 | 은 또는 은합금의 배선 및 반사막 형성을 위한 식각용액 |
| KR101348474B1 (ko) * | 2008-01-25 | 2014-01-06 | 동우 화인켐 주식회사 | 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴형성방법 |
| JP2010242124A (ja) * | 2009-04-01 | 2010-10-28 | Tosoh Corp | エッチング用組成物及びエッチング方法 |
| KR20110046992A (ko) * | 2009-10-29 | 2011-05-06 | 동우 화인켐 주식회사 | 식각액 조성물 |
| JP5760415B2 (ja) * | 2010-12-09 | 2015-08-12 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
| KR102009250B1 (ko) * | 2011-09-09 | 2019-08-12 | 동우 화인켐 주식회사 | 표시장치의 제조방법 및 이에 이용되는 구리계 금속막/금속 산화물막의 식각액 조성물 |
| JP5722453B2 (ja) * | 2011-09-26 | 2015-05-20 | シャープ株式会社 | 表示装置の製造方法 |
| KR101391603B1 (ko) * | 2012-05-22 | 2014-05-07 | 솔브레인 주식회사 | 은함유 패턴의 식각액 |
| KR101905195B1 (ko) * | 2012-12-24 | 2018-10-05 | 동우 화인켐 주식회사 | 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법 |
| JP5612147B2 (ja) * | 2013-03-11 | 2014-10-22 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
| KR20150088000A (ko) * | 2014-01-23 | 2015-07-31 | 동우 화인켐 주식회사 | 금속막 식각 방법 |
| JP5792336B2 (ja) * | 2014-02-28 | 2015-10-07 | 芝普企業股▲分▼有限公司 | 有効にガルバノ効果を軽減できるエッチング液 |
| TWI631205B (zh) * | 2015-11-06 | 2018-08-01 | 東友精細化工有限公司 | 銀蝕刻液組合物和使用該組合物的顯示基板 |
-
2015
- 2015-11-10 KR KR1020150157637A patent/KR102433385B1/ko active IP Right Grant
-
2016
- 2016-03-30 TW TW105110057A patent/TWI636157B/zh active
- 2016-03-31 JP JP2016070480A patent/JP6669566B2/ja active Active
- 2016-04-15 CN CN201610236340.3A patent/CN106676526A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW201716632A (zh) | 2017-05-16 |
| KR102433385B1 (ko) | 2022-08-17 |
| KR20170054908A (ko) | 2017-05-18 |
| JP2017092440A (ja) | 2017-05-25 |
| TWI636157B (zh) | 2018-09-21 |
| CN106676526A (zh) | 2017-05-17 |
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