JP6661124B2 - 半導体膜、積層構造体および半導体装置 - Google Patents

半導体膜、積層構造体および半導体装置 Download PDF

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JP6661124B2
JP6661124B2 JP2015118588A JP2015118588A JP6661124B2 JP 6661124 B2 JP6661124 B2 JP 6661124B2 JP 2015118588 A JP2015118588 A JP 2015118588A JP 2015118588 A JP2015118588 A JP 2015118588A JP 6661124 B2 JP6661124 B2 JP 6661124B2
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film
substrate
semiconductor
semiconductor film
carrier gas
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JP2017005148A (ja
JP2017005148A5 (enExample
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真也 織田
真也 織田
梨絵 徳田
梨絵 徳田
谷川　幸登
幸登 谷川
俊実 人羅
俊実 人羅
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Flosfia Inc
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Flosfia Inc
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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
JP2015118588A 2015-06-11 2015-06-11 半導体膜、積層構造体および半導体装置 Active JP6661124B2 (ja)

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JP2015118588A JP6661124B2 (ja) 2015-06-11 2015-06-11 半導体膜、積層構造体および半導体装置

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JP2017005148A JP2017005148A (ja) 2017-01-05
JP2017005148A5 JP2017005148A5 (enExample) 2018-08-02
JP6661124B2 true JP6661124B2 (ja) 2020-03-11

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7078581B2 (ja) * 2019-08-29 2022-05-31 信越化学工業株式会社 積層構造体及び半導体装置並びに積層構造体の製造方法
JP7078582B2 (ja) * 2019-08-29 2022-05-31 信越化学工業株式会社 積層構造体、半導体装置及び結晶性酸化膜の成膜方法
JP7093329B2 (ja) * 2019-09-02 2022-06-29 信越化学工業株式会社 積層構造体、半導体装置及び半導体システム
JP7097861B2 (ja) * 2019-09-03 2022-07-08 信越化学工業株式会社 積層構造体、半導体装置及び半導体システム
JP7161456B2 (ja) * 2019-09-03 2022-10-26 信越化学工業株式会社 積層構造体及び半導体装置並びに積層構造体の製造方法
JP7161457B2 (ja) * 2019-09-03 2022-10-26 信越化学工業株式会社 積層構造体及び半導体装置並びに積層構造体の製造方法
JP7348777B2 (ja) * 2019-09-03 2023-09-21 信越化学工業株式会社 積層構造体の製造方法及び半導体装置の製造方法
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
CN118369767A (zh) * 2021-11-10 2024-07-19 斯兰纳Uv科技有限公司 外延氧化物材料、结构和装置
CN114823977B (zh) * 2022-04-25 2024-02-23 中国科学技术大学 氧化镓光电探测器的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9099560B2 (en) * 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9362417B2 (en) * 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102101167B1 (ko) * 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6175244B2 (ja) * 2012-02-09 2017-08-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2015070248A (ja) * 2013-10-01 2015-04-13 株式会社Flosfia 酸化物薄膜及びその製造方法

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