JP6661041B2 - 酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法 - Google Patents

酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法 Download PDF

Info

Publication number
JP6661041B2
JP6661041B2 JP2019072693A JP2019072693A JP6661041B2 JP 6661041 B2 JP6661041 B2 JP 6661041B2 JP 2019072693 A JP2019072693 A JP 2019072693A JP 2019072693 A JP2019072693 A JP 2019072693A JP 6661041 B2 JP6661041 B2 JP 6661041B2
Authority
JP
Japan
Prior art keywords
sintered body
oxide sintered
sputtering target
sputtering
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019072693A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019189517A5 (https=
JP2019189517A (ja
Inventor
享祐 寺村
享祐 寺村
功児 深川
功児 深川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Publication of JP2019189517A publication Critical patent/JP2019189517A/ja
Publication of JP2019189517A5 publication Critical patent/JP2019189517A5/ja
Application granted granted Critical
Publication of JP6661041B2 publication Critical patent/JP6661041B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2019072693A 2018-04-18 2019-04-05 酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法 Active JP6661041B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018080072 2018-04-18
JP2018080072 2018-04-18

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2019500522A Division JP6511209B1 (ja) 2018-04-18 2018-08-29 酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法

Publications (3)

Publication Number Publication Date
JP2019189517A JP2019189517A (ja) 2019-10-31
JP2019189517A5 JP2019189517A5 (https=) 2020-01-30
JP6661041B2 true JP6661041B2 (ja) 2020-03-11

Family

ID=68239411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019072693A Active JP6661041B2 (ja) 2018-04-18 2019-04-05 酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法

Country Status (3)

Country Link
JP (1) JP6661041B2 (https=)
TW (2) TWI755648B (https=)
WO (1) WO2019202753A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023102459A (ja) * 2022-01-12 2023-07-25 ケイブイマテリアルズ株式会社 酸化物スパッタリングターゲット、その製造方法、及び薄膜形成方法
WO2025220274A1 (ja) * 2024-04-17 2025-10-23 Ｊｘ金属株式会社 焼結体及びスパッタリングターゲット並びに焼結体の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3152108B2 (ja) * 1994-06-13 2001-04-03 東ソー株式会社 Ｉｔｏスパッタリングターゲット
JP3644647B2 (ja) * 1995-04-25 2005-05-11 Ｈｏｙａ株式会社 導電性酸化物およびそれを用いた電極
KR101228160B1 (ko) * 2007-12-27 2013-01-30 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 ａ-ＩＧＺＯ 산화물 박막의 제조 방법
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP5202630B2 (ja) * 2008-06-10 2013-06-05 Ｊｘ日鉱日石金属株式会社 スパッタリング用酸化物焼結体ターゲット及びその製造方法
JP2012052227A (ja) * 2010-08-05 2012-03-15 Mitsubishi Materials Corp スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP2013193945A (ja) * 2012-03-22 2013-09-30 Sumitomo Metal Mining Co Ltd Ｉｎ−Ｇａ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法およびスパッタリングターゲットと酸化物半導体膜
JP5904056B2 (ja) * 2012-08-22 2016-04-13 東ソー株式会社 Ｉｇｚｏ焼結体、その製造方法及びスパッタリングターゲット
JP6264846B2 (ja) * 2012-12-27 2018-01-24 東ソー株式会社 酸化物焼結体、スパッタリングターゲットおよびその製造方法
KR101644767B1 (ko) * 2014-03-28 2016-08-01 제이엑스금속주식회사 산화물 소결체 및 그 산화물 소결체로 이루어지는 스퍼터링 타깃
JP6158129B2 (ja) * 2014-03-28 2017-07-05 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
JP6398643B2 (ja) * 2014-11-20 2018-10-03 Tdk株式会社 スパッタリングターゲット、透明導電性酸化物薄膜、及び導電性フィルム

Also Published As

Publication number Publication date
TWI679292B (zh) 2019-12-11
TWI755648B (zh) 2022-02-21
TW202006162A (zh) 2020-02-01
TW201943876A (zh) 2019-11-16
WO2019202753A1 (ja) 2019-10-24
JP2019189517A (ja) 2019-10-31

Similar Documents

Publication Publication Date Title
JP7218481B2 (ja) スパッタリングターゲット材及び酸化物半導体
KR101695578B1 (ko) 산화물 소결체 및 스퍼터링 타깃, 및 그 제조 방법
CN102428586B (zh) 钨青铜型压电材料及其制备方法
JP5237557B2 (ja) スパッタリングターゲット及びその製造方法
WO2014021334A1 (ja) 酸化物焼結体、及びスパッタリングターゲット
JP6661041B2 (ja) 酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法
JP6511209B1 (ja) 酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜の製造方法
KR102099197B1 (ko) 산화물 소결체 및 스퍼터링 타깃, 그리고 그것들의 제조 방법
JP6781931B2 (ja) スパッタリングターゲット材
JP6070171B2 (ja) Ｉｇｚｏ焼結体およびスパッタリングターゲット
JP7282766B2 (ja) 酸化物焼結体およびスパッタリングターゲット
TW201736318A (zh) 氧化物燒結體、其製造方法及濺鍍靶材
JP2011195409A (ja) Ｉｎ−Ｇａ−Ｚｎ系複合酸化物焼結体およびその製造方法
CN110937891A (zh) 烧结体、溅射靶及烧结体的制造方法
JP5526905B2 (ja) 導電性酸化物焼結体の製造方法
TW202507032A (zh) 氧化物燒結體的製造方法
JP6883431B2 (ja) ＬｉＣｏＯ２焼結体およびその製造方法
TW202506602A (zh) 氧化物燒結體
CN113195434A (zh) 烧结体
JP2014125365A (ja) Ｉｇｚｏ原料粉末

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191213

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191213

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20191213

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20200117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200210

R150 Certificate of patent or registration of utility model

Ref document number: 6661041

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350