JP6655008B2 - Euv照射下で膨張しないeuvリソグラフィ用ミラーブランク - Google Patents
Euv照射下で膨張しないeuvリソグラフィ用ミラーブランク Download PDFInfo
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- 238000001900 extreme ultraviolet lithography Methods 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims description 134
- 238000009826 distribution Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 36
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000004071 soot Substances 0.000 claims description 21
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 19
- 239000007858 starting material Substances 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 230000001419 dependent effect Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 28
- 230000005855 radiation Effects 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 6
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- IKNCGYCHMGNBCP-UHFFFAOYSA-N propan-1-olate Chemical compound CCC[O-] IKNCGYCHMGNBCP-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/008—Mountings, adjusting means, or light-tight connections, for optical elements with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/08—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
- C03B2201/12—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant doped with fluorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
- C03B2201/23—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
- C03C2201/40—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03C2201/42—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn containing titanium
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Glass Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Glass Melting And Manufacturing (AREA)
Description
a)基板のゼロ交差温度の不均一な基準温度プロファイルを予め定義する工程、
b)基板を、ゼロ交差温度の予め定義した、位置に依存する基準プロファイルを調節しながら製造する工程
を含む、EUVミラー用基板の製造方法である。
i)シリコンを含有する出発物質及びチタンを含有する出発物質を堆積させて、TiO2ドープスート体を形成する工程、
ii)スート体を乾燥する工程、
iii)スート体を焼結してブランクを形成する工程、
iv)ブランクを均質化する工程及び場合により
v)基板を形成する工程
を含む。
a)基板を有するEUVミラーを準備する工程及び
b)動作中にEUVミラーに作用する少なくとも1つの光源を準備する工程
を含むリソグラフィ法であり、ここで、基板におけるゼロ交差温度の分布及び/又はプロファイルは、ミラーの動作温度の分布に適合させられている。
OVD法を用いたSiO2−TiO2粒子の形成のための出発物質としてオクタメチルシクロテトラシロキサン(OMCTS)及びチタンイソプロポキシド[Ti(OiPr)4]の火炎加水分解によって、約8質量%のTiO2でドープされているスート体を製造する。
SiO2−TiO2粒子の形成のための出発物質としてオクタメチルシクロテトラシロキサン(OMCTS)及びチタンイソプロポキシド[Ti(OiPr)4]の火炎加水分解によって、OVD法を用いてスート体を製造する。作製している間、チタン前駆体[Ti(OiPr)4]の割合を、TiO2濃度が初め8.20%であり、かつ時間とともに減少し、そうして当該濃度が終わり頃には僅か8.05%になる程度に下げる。
Claims (11)
- EUVミラー用基板において、前記基板が酸化チタンドープ石英ガラスからなり、その表面で、統計的分布から逸脱するゼロ交差温度のプロファイルを有し、ここで、前記ゼロ交差温度のプロファイルは、少なくとも1つの局所ピークを有し、ミラーの動作温度のプロファイルに適合させられており、
前記基板は、前記表面で最小ゼロ交差温度(Tzcmin)と最大ゼロ交差温度(Tzcmax)とを有しており、これらの温度の差が1.5Kを上回り、周縁部から隔たった領域においてゼロ交差温度Tzc1を有し、周縁部ではゼロ交差温度Tzc2を有し、Tzc1が、Tzc2より少なくとも1.5K高く、
前記基板のOH含有量のプロファイル、仮想温度のプロファイル、又は酸化チタン濃度のプロファイルのいずれかが、前記ゼロ交差温度を所望のプロファイルとするために調整されている
ことを特徴とする、前記基板。 - 前記基板が、当該基板の全質量に対して5質量%〜12質量%の量で二酸化チタンを有することを特徴とする、請求項1記載の基板。
- 前記基板が、複数の層を含むことを特徴とする、請求項1又は2記載の基板。
- TzcmaxとTzcminとの差が、少なくとも2Kであることを特徴とする、請求項1から3までのいずれか1項記載の基板。
- TzcmaxとTzcminとの差が、2〜10Kの範囲にあることを特徴とする、請求項1から4までのいずれか1項記載の基板。
- 前記ゼロ交差温度のプロファイルは、少なくとも部分的にほぼ一定したプロファイルを有していることを特徴とする、請求項1から5までのいずれか1項記載の基板。
- 請求項1から6までのいずれか1項記載のEUVミラー用基板の製造方法であって、以下の工程:
a)前記基板の径方向にゼロ交差温度の不均一なプロファイルを予め定義する工程、
b)前記基板を、前記ゼロ交差温度の予め定義した位置依存の前記プロファイルを調節しながら製造する工程
を含み、前記基板の製造は、以下の工程:
i)シリコンを含有する出発物質及びチタンを含有する出発物質を堆積させて、TiO2ドープスート体を形成する工程、
ii)前記スート体を乾燥する工程、
iii)前記スート体を焼結して円柱状のブランクを形成する工程、
iv)前記円柱状のブランクを均質化する工程及び
v)基板を形成する工程
を含む方法において、
前記ゼロ交差温度のプロファイルの調節を、前記スート体の乾燥中の拡散プロセスによるOH含有量の調節、前記基板の熱処理による仮想温度の調節、又は前記チタンを含有する出発物質の量を前記堆積中に変えることによる酸化チタンの濃度の調節のいずれかにより行う
ことを特徴とする、前記方法。 - 前記出発物質を、円柱状のブランク上で層状に堆積させることを特徴とする、請求項7記載の方法。
- 前記ゼロ交差温度のプロファイルを、統計的分布から逸脱する酸化チタンドープによって調節することを特徴とする、請求項7又は8記載の方法。
- 前記仮想温度を、リングによる加熱処理、人為的な寸法拡大及び/又は強制冷却によって調節することを特徴とする、請求項7記載の方法。
- 請求項1から6までのいずれか1項記載の基板、又は請求項7から10までのいずれか1項記載の方法によって得られた基板の、リソグラフィ法におけるEUVミラーとしての使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013219808.6A DE102013219808A1 (de) | 2013-09-30 | 2013-09-30 | Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung |
DE102013219808.6 | 2013-09-30 | ||
PCT/EP2014/069302 WO2015043957A1 (de) | 2013-09-30 | 2014-09-10 | Spiegelblank für euv lithographie ohne ausdehnung unter euv-bestrahlung |
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JP2016534959A JP2016534959A (ja) | 2016-11-10 |
JP6655008B2 true JP6655008B2 (ja) | 2020-02-26 |
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Country | Link |
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US (1) | US10732519B2 (ja) |
EP (1) | EP3052448B1 (ja) |
JP (1) | JP6655008B2 (ja) |
KR (2) | KR20160060722A (ja) |
CN (1) | CN105579410B (ja) |
DE (1) | DE102013219808A1 (ja) |
TW (1) | TWI563346B (ja) |
WO (1) | WO2015043957A1 (ja) |
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WO2024120705A1 (en) * | 2022-12-07 | 2024-06-13 | Asml Netherlands B.V. | Improved reticle and reticle blank |
DE102023200970A1 (de) | 2023-02-07 | 2024-08-08 | Carl Zeiss Smt Gmbh | Optisches element mit polierschicht |
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- 2014-09-10 WO PCT/EP2014/069302 patent/WO2015043957A1/de active Application Filing
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EP3052448B1 (de) | 2022-01-05 |
CN105579410A (zh) | 2016-05-11 |
TW201520697A (zh) | 2015-06-01 |
CN105579410B (zh) | 2020-08-04 |
EP3052448A1 (de) | 2016-08-10 |
US20160320715A1 (en) | 2016-11-03 |
TWI563346B (en) | 2016-12-21 |
DE102013219808A1 (de) | 2015-04-02 |
KR20160060722A (ko) | 2016-05-30 |
WO2015043957A1 (de) | 2015-04-02 |
US10732519B2 (en) | 2020-08-04 |
KR102096734B1 (ko) | 2020-04-03 |
JP2016534959A (ja) | 2016-11-10 |
KR20180110236A (ko) | 2018-10-08 |
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