JP6645873B2 - 研磨用組成物 - Google Patents

研磨用組成物 Download PDF

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Publication number
JP6645873B2
JP6645873B2 JP2016042674A JP2016042674A JP6645873B2 JP 6645873 B2 JP6645873 B2 JP 6645873B2 JP 2016042674 A JP2016042674 A JP 2016042674A JP 2016042674 A JP2016042674 A JP 2016042674A JP 6645873 B2 JP6645873 B2 JP 6645873B2
Authority
JP
Japan
Prior art keywords
polishing
polishing composition
water
mass
colloidal silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016042674A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017155198A5 (OSRAM
JP2017155198A (ja
Inventor
福井孝一
雄大 湯浅
雄大 湯浅
優二 川浦
優二 川浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT SILICA INC.
Mimasu Semiconductor Industry Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
AT SILICA INC.
Mimasu Semiconductor Industry Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT SILICA INC., Mimasu Semiconductor Industry Co Ltd, Shin Etsu Handotai Co Ltd filed Critical AT SILICA INC.
Priority to JP2016042674A priority Critical patent/JP6645873B2/ja
Priority to KR1020187017929A priority patent/KR20180118603A/ko
Priority to PCT/JP2017/004582 priority patent/WO2017150114A1/ja
Publication of JP2017155198A publication Critical patent/JP2017155198A/ja
Publication of JP2017155198A5 publication Critical patent/JP2017155198A5/ja
Application granted granted Critical
Publication of JP6645873B2 publication Critical patent/JP6645873B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2016042674A 2016-03-04 2016-03-04 研磨用組成物 Active JP6645873B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016042674A JP6645873B2 (ja) 2016-03-04 2016-03-04 研磨用組成物
KR1020187017929A KR20180118603A (ko) 2016-03-04 2017-02-08 연마용 조성물
PCT/JP2017/004582 WO2017150114A1 (ja) 2016-03-04 2017-02-08 研磨用組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016042674A JP6645873B2 (ja) 2016-03-04 2016-03-04 研磨用組成物

Publications (3)

Publication Number Publication Date
JP2017155198A JP2017155198A (ja) 2017-09-07
JP2017155198A5 JP2017155198A5 (OSRAM) 2018-06-14
JP6645873B2 true JP6645873B2 (ja) 2020-02-14

Family

ID=59744050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016042674A Active JP6645873B2 (ja) 2016-03-04 2016-03-04 研磨用組成物

Country Status (3)

Country Link
JP (1) JP6645873B2 (OSRAM)
KR (1) KR20180118603A (OSRAM)
WO (1) WO2017150114A1 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6255471B1 (ja) * 2016-12-28 2017-12-27 日揮触媒化成株式会社 シリカ粒子分散液及びその製造方法
JP7477964B2 (ja) * 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド 化学機械研磨組成物及びそれを用いた化学機械研磨方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0655957B2 (ja) * 1986-02-28 1994-07-27 徳山曹達株式会社 洗浄用組成物
JPS63196697A (ja) * 1987-02-09 1988-08-15 花王株式会社 液体クレンザ−組成物
JPH0425599A (ja) * 1990-05-21 1992-01-29 Kao Corp スコアリングパッド用洗浄剤組成物
JP4318840B2 (ja) * 2000-06-21 2009-08-26 花王株式会社 硬質表面用防汚剤
JP2002180090A (ja) * 2000-12-08 2002-06-26 Kao Corp 洗浄つや出し剤組成物
JP2002190458A (ja) * 2000-12-21 2002-07-05 Jsr Corp 化学機械研磨用水系分散体
JP2003147391A (ja) * 2001-11-16 2003-05-21 Toyo Seikan Kaisha Ltd 研磨洗浄用エアゾール製品
JP2009263560A (ja) * 2008-04-28 2009-11-12 Dai Ichi Kogyo Seiyaku Co Ltd 液体洗浄剤組成物
JP2010129941A (ja) * 2008-12-01 2010-06-10 Fujifilm Corp 金属用研磨液、および化学的機械的研磨方法
JP5441578B2 (ja) * 2009-09-11 2014-03-12 花王株式会社 研磨液組成物
WO2012067962A1 (en) * 2010-11-16 2012-05-24 Dow Global Technologies Llc Hard surface cleaners comprising low voc, low odor alkanolamines
US20130302984A1 (en) * 2011-01-26 2013-11-14 Fujimi Incorporated Polishing composition, polishing method using same, and substrate production method
EP2753670B1 (en) * 2011-09-07 2016-06-22 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
JP6105916B2 (ja) * 2012-12-17 2017-03-29 株式会社フジミインコーポレーテッド セルロース誘導体組成物、当該セルロース誘導体組成物を用いた研磨用組成物、当該研磨用組成物の製造方法、および当該研磨用組成物を用いた基板の製造方法

Also Published As

Publication number Publication date
KR20180118603A (ko) 2018-10-31
WO2017150114A1 (ja) 2017-09-08
JP2017155198A (ja) 2017-09-07

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