JP6639042B2 - Mems素子 - Google Patents
Mems素子 Download PDFInfo
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- JP6639042B2 JP6639042B2 JP2016041792A JP2016041792A JP6639042B2 JP 6639042 B2 JP6639042 B2 JP 6639042B2 JP 2016041792 A JP2016041792 A JP 2016041792A JP 2016041792 A JP2016041792 A JP 2016041792A JP 6639042 B2 JP6639042 B2 JP 6639042B2
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- movable electrode
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- 239000000758 substrate Substances 0.000 claims description 13
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 description 18
- 238000006073 displacement reaction Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000003475 lamination Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010255 response to auditory stimulus Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Images
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- Micromachines (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Description
Claims (3)
- バックチャンバーを備えた基板と、該基板上に、スペーサーを挟んで固定電極膜と可動電極膜とを配置することでエアーギャップが形成されたMEMS素子において、
前記可動電極膜に形成されたスリットと、
該スリットに対向配置した庇部と、を備え、
該庇部と前記可動電極膜との間隙により前記エアーギャップと前記バックチャンバーとの間の空気抵抗が高くなる狭窄部を形成していることを特徴とするMEMS素子。 - 請求項1記載のMEMS素子において、
前記庇部は、導電性材料からなり、前記エアーギャップ内の前記可動電極上に接続固定され、前記可動電極膜の振動と連動して上下動することを特徴とするMEMS素子。 - 請求項1記載のMEMS素子において、
前記庇部は、前記エアーギャップ側あるいは前記バックチャンバー側のいずれか一方あるいは両方に配置され、前記可動電極膜が振動しても上下動しないように固定されていることを特徴とするMEMS素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016041792A JP6639042B2 (ja) | 2016-03-04 | 2016-03-04 | Mems素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2016041792A JP6639042B2 (ja) | 2016-03-04 | 2016-03-04 | Mems素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017158128A JP2017158128A (ja) | 2017-09-07 |
JP6639042B2 true JP6639042B2 (ja) | 2020-02-05 |
Family
ID=59810350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016041792A Active JP6639042B2 (ja) | 2016-03-04 | 2016-03-04 | Mems素子 |
Country Status (1)
Country | Link |
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JP (1) | JP6639042B2 (ja) |
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2016
- 2016-03-04 JP JP2016041792A patent/JP6639042B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2017158128A (ja) | 2017-09-07 |
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