JP6634945B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP6634945B2 JP6634945B2 JP2016083935A JP2016083935A JP6634945B2 JP 6634945 B2 JP6634945 B2 JP 6634945B2 JP 2016083935 A JP2016083935 A JP 2016083935A JP 2016083935 A JP2016083935 A JP 2016083935A JP 6634945 B2 JP6634945 B2 JP 6634945B2
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- Prior art keywords
- terminal
- igbt
- mosfet
- semiconductor module
- switching element
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- 239000004065 semiconductor Substances 0.000 title claims description 140
- 239000003507 refrigerant Substances 0.000 claims description 54
- 238000001816 cooling Methods 0.000 claims description 34
- 239000002826 coolant Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910052774 Proactinium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
互いに並列接続され且つ同一のリードフレーム(16,17)に設けられたIGBT(14)及びMOSFET(15)と、
上記リードフレームから一体に延出したパワー端子としてのP端子(11p)及びN端子(11n)と、
を備え、
上記リードフレームにおいて上記IGBT及び上記MOSFETのいずれか一方である第1スイッチング素子を経由して上記P端子と上記N端子との間に形成される通電経路(Pa,Pb)から外れた位置に、上記IGBT及び上記MOSFETのいずれか他方である第2スイッチング素子が配置されるように構成されている、半導体モジュール(11)にある。
IGBT(14)及びMOSFET(15)が互いに並列接続されるとともに、電源(B)の高電位側ライン(Lp)と低電位側ライン(Ln)との間に直列に接続され且つ同一のリードフレーム(16,17)に設けられた複数の半導体素子対と、
上記リードフレームから一体に延出したパワー端子としてのP端子(11p)及びN端子(11n)及びO端子(11o)と、
を備え、
上記P端子が上記高電位側ラインに接続され、上記N端子が上記低電位側ラインに接続され、上記O端子が上記交流出力ライン(Lo)に接続されており、
上記複数の半導体素子対に含まれる複数の上記IGBT及び複数の上記MOSFETのいずれか一方である複数の第1スイッチング素子が他方である複数の第2スイッチング素子よりも先に駆動されるとともに、上記複数の半導体素子対のうち上記高電位側ラインと上記交流出力ラインとの間に配置される半導体素子対について上記第1スイッチング素子を経由して上記P端子と上記O端子との間に形成される通電経路(Pc)から外れた位置に上記第2スイッチング素子が配置され、上記複数の半導体素子対のうち上記低電位側ラインと上記交流出力ラインとの間に配置される半導体素子対について上記第1スイッチング素子を経由して上記N端子と上記O端子との間に形成される通電経路(Pd)から外れた位置に上記第2スイッチング素子が配置されるように構成されている、半導体モジュール(111)にある。
なお、特許請求の範囲及び課題を解決する手段に記載した括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示すものであり、本発明の技術的範囲を限定するものではない。
図1及び図2に示されるように、実施形態1の電力変換装置1は、半導体積層ユニット10及び制御回路基板30を含む複数の要素を備えている。これら複数の要素はケース1aによって区画された空間に収容されている。ケース1aは、軽量且つ高度な寸法精度が要求される自動車部品であり、アルミニウムを使用したアルミダイカスト製法によって作製されている。
また、この熱的影響を抑えることによって、IGBT14及びMOSFET15のそれぞれの性能が向上し、その分、各スイッチング素子の素子サイズを小さくできる。
実施形態2の電力変換装置2は、実施形態1の電力変換装置1に対して、IGBT14及びMOSFET15からなる半導体素子対の数が異なる。即ち、電力変換装置2の半導体モジュール111は、IGBT14及びMOSFET15からなる半導体素子対を2つ備えている。この半導体モジュール111は、IGBT14及びMOSFET15が互いに並列接続された2つの半導体素子対を備えており、これら2つの半導体素子対が電源Bの高電位側ラインLpと低電位側ラインLnとの間に直列に接続されている。この半導体モジュール111は、「2in1モジュール」と称呼される。この半導体モジュール111は、図5中の1つ上アームモジュール11Hと1つの下アームモジュール11Lとを組み合わせた構成を有する。
なお、必要に応じて、3つ以上の半導体素子対を備えた半導体モジュールを採用することもできる。
その他の構成は、実施形態1と同様である。
また、サブ素子である2つのMOSFET15,15を順次経由して高電位側ラインLpと低電位側ラインLnとの間に形成される通電経路に比べてメイン素子である2つのIGBT14,14を順次経由して高電位側ラインLpと低電位側ラインLnとの間に形成される通電経路の方が短くインダクタンスが小さいため、IGBT14によるスイッチング損失を低く抑えることができ、IGBT14の素子サイズを小さくできる。
その他、実施形態1と同様の作用効果を奏する。
11,111 半導体モジュール
11p P端子(第1端子)
11n N端子(第2端子)
11o O端子
14 IGBT
15 MOSFET
16,17 リードフレーム
20 冷却器
24 冷媒流路
B 電源
F,Fa,Fb,Fc,Fd 冷媒の流れ
Lp 高電位側ライン
Ln 低電位側ライン
Lo 交流出力ライン
Pa,Pb,Pc,Pd 通電経路
Claims (9)
- 互いに並列接続され且つ同一のリードフレーム(16,17)に設けられたIGBT(14)及びMOSFET(15)と、
上記リードフレームから一体に延出したパワー端子としてのP端子(11p)及びN端子(11n)と、
を備え、
上記リードフレームにおいて上記IGBT及び上記MOSFETのいずれか一方である第1スイッチング素子を経由して上記P端子と上記N端子との間に形成される通電経路(Pa,Pb)から外れた位置に、上記IGBT及び上記MOSFETのいずれか他方である第2スイッチング素子が配置されるように構成されている、半導体モジュール(11)。 - 上記P端子と上記N端子が上記リードフレームから互いに平行に延出しており、
上記IGBT及び上記MOSFETは、上記P端子及び上記N端子の延出方向と交差する方向に並んで配置されている、請求項1に記載の半導体モジュール。 - 上記第1スイッチング素子が上記第2スイッチング素子よりも先に駆動されるとともに、上記第1スイッチング素子を経由して上記P端子と上記N端子との間に形成される通電経路のインダクタンスが、上記第2スイッチング素子を経由して上記P端子と上記N端子との間に形成される通電経路のインダクタンスを下回るように構成されている、請求項1または2に記載の半導体モジュール。
- 上記リードフレームに対向して延びる冷媒流路(24)を有する冷却器(20)が取付けられ、先に駆動される上記第1スイッチング素子は、上記冷却器の上記冷媒流路における冷媒の流れに対して上記第2スイッチング素子よりも下流側に配置されないように構成されている、請求項3に記載の半導体モジュール。
- 先に駆動される上記第1スイッチング素子は、上記冷却器の上記冷媒流路における冷媒の流れに対して上記第2スイッチング素子よりも上流側に配置されるように構成されている、請求項4に記載の半導体モジュール。
- IGBT(14)及びMOSFET(15)が互いに並列接続されるとともに、電源(B)の高電位側ライン(Lp)と低電位側ライン(Ln)との間に直列に接続され且つ同一のリードフレーム(16,17)に設けられた複数の半導体素子対と、
上記リードフレームから一体に延出したパワー端子としてのP端子(11p)及びN端子(11n)及びO端子(11o)と、
を備え、
上記P端子が上記高電位側ラインに接続され、上記N端子が上記低電位側ラインに接続され、上記O端子が交流出力ライン(Lo)に接続されており、
上記複数の半導体素子対に含まれる複数の上記IGBT及び複数の上記MOSFETのいずれか一方である複数の第1スイッチング素子が他方である複数の第2スイッチング素子よりも先に駆動されるとともに、上記複数の半導体素子対のうち上記高電位側ラインと上記交流出力ラインとの間に配置される半導体素子対について上記第1スイッチング素子を経由して上記P端子と上記O端子との間に形成される通電経路(Pc)から外れた位置に上記第2スイッチング素子が配置され、上記複数の半導体素子対のうち上記低電位側ラインと上記交流出力ラインとの間に配置される半導体素子対について上記第1スイッチング素子を経由して上記N端子と上記O端子との間に形成される通電経路(Pd)から外れた位置に上記第2スイッチング素子が配置されるように構成されている、半導体モジュール(111)。 - 上記複数の第1スイッチング素子を順次経由して上記高電位側ラインと上記低電位側ラインとの間に形成される通電経路のインダクタンスが、上記複数の第2スイッチング素子を順次経由して上記高電位側ラインと上記低電位側ラインとの間に形成される通電経路のインダクタンスを下回るように構成されている、請求項6に記載の半導体モジュール。
- 上記リードフレームに対向して延びる冷媒流路(24)を有する冷却器(20)が取付けられ、上記複数の半導体素子対のそれぞれにおいて先に駆動される上記第1スイッチング素子が上記冷却器の上記冷媒流路における冷媒の流れに対して上記第2スイッチング素子よりも下流側に配置されないように構成されている、請求項6または7に記載の半導体モジュール。
- 上記第1スイッチング素子がSi系材料によって構成された上記IGBTであり、上記第2スイッチング素子がワイドギャップ半導体材料によって構成された上記MOSFETである、請求項1〜8のいずれか一項に記載の半導体モジュール。
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